SiOx低表面能薄膜的制备

以四甲基二硅氧烷（TMDSO）为单体、氧气为反应气体、氩气为电离气体,在载玻片、单晶硅片、PET、BOPP等基体材料上采用射频等离子体聚合装置沉积氧化硅低表面能薄膜。在薄膜的制备工艺研究中,通过改变各种参数研究氧化硅薄膜的沉积速率;通过傅立叶红外光谱仪（FTIR）、原子力显微镜（AFM）等分析了沉积膜的化学组成和结合状态;利用接触角测定仪测量薄膜的接触角从而计算薄膜的表面能,从结构分析上研究影响SiO2薄膜低表面能内在因素。     

纳米银-聚合物菱形剪纸薄膜应变传感特性的研究

采用银镜制备法和激光切割技术获得了纳米银颗粒/聚二甲基硅氧烷剪纸结构薄膜,并系统地研究了薄膜作为柔性应变传感器的力学及压阻特性。将数值模拟与实验相结合,测量了传感薄膜的应变比γ、压阻滞回特性、线性度及压阻敏感性,重点探讨了薄膜制备工艺、结构参数与上述薄膜传感特性的定量关系。结果表明,在给定结构下,结构薄膜整体与结构单元的应变比γ为常数,反映了结构薄膜的变形特性,是理想的力学性能表征参数。菱形剪纸结构薄膜具有量级可达200的大应变比,即在大应变下,材料的实际应变很小。这一特点极大地提升了薄膜的应变测量范围、压阻稳定性、线性度,并保持了合理的压阻灵敏度。     

压头曲率半径对硬质薄膜结合力划痕测量影响的比较研究

硬质薄膜的膜/基结合力是表征材料可靠性的重要特性参数。采用划痕法测试硬质薄膜的结合力时,有很多因素会影响到临界载荷Lc的判定,例如薄膜和基底的硬度、模量,薄膜的表面粗糙度等;此外,仪器机架刚度、划痕速率、压头的曲率半径等仪器的测量参数也会影响临界载荷Lc的判定。采用划痕测量法,研究了曲率半径为20μm,50μm和100μm的压头对单晶硅和304基底的亚微米类金刚石薄膜与基底的结合力测量的影响。研究结果显示:随着压头曲率半径的增加,2种材料的临界载荷也随之增大。     

硅衬底Bi_4Ti_3O_(12)和Bi_(3.25)La_(0.75)Ti_3O_(12)铁电薄膜的慢正电子束研究

对硅衬底生长的Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜样品测量了慢正电子多普勒展宽谱,得到了S参数随正电子注入能量的变化。通过对S参数和W参数的分析,讨论了这类材料中的捕获态特征和结构特点,结果表明,薄膜与硅衬底界面的缺陷为空位-氧复合体,La的掺杂有助于阻止空位-氧复合体向界面的扩散。     

二氧化钒薄膜微结构和光学相变特性

二氧化钒薄膜是最有前途应用到非制冷红外微测热辐射计的材料，它的特性与制备方法、化学计量比、结构和取向等有直接关系，仔细控制工艺参数是制备应用的VO2薄膜关键。研究中采用脉冲磁控反应溅射方法，通过精确地控制功率、氧分压、基底温度等关键工艺参数，在石英玻璃和硅片上制备VO2薄膜。利用X射线衍射和x射线光电子谱，分析了薄膜的成分、相结构、结晶和价态情况，用原子力显微镜表征了薄膜的微观结构，在光谱仪对VO2薄膜的高低温光学特性原位测量。结果表明，得到的VO2薄膜纯度高、相结构单一、结晶度、多晶生长。在波数2000cm^-1高低温透射变化达到51％。     

微穿孔板-聚氨酯微孔薄膜复合结构吸声特性

当微穿孔板背后空腔的长度受到结构限制,对于低频噪声很难吸收,在微穿孔板后增加一层聚氨酯微孔可渗透薄膜形成复合结构可增加低频吸声特性。设计一种改进的聚氨酯微孔可渗透薄膜流阻测量实验装置,充分考虑材料本身质量的影响,建立微穿孔板-可渗透薄膜复合结构声阻抗电声等效电路,该方法可普遍用于预测此类复合结构吸声特性。理论计算不同可渗透膜材料的面密度、流阻等参数对复合结构垂直入射吸声系数的影响。结果表明：在微穿孔板背后增加一层聚氨酯微孔可渗透薄膜,可以在中低频段获得较好的吸声效果。     

椭圆偏振理论与高聚物复合材料结构性能的研究——(一)椭圆偏振理论分析——各向同性体系

本文主要研究各向同性透明材料薄膜的椭圆偏振理论及实验参数选择。这是椭圆偏振用于高聚物复合材料结构性能研究的一个基本问题。从椭圆偏振基本公式出发,对空气—材料膜—基底的三层介质系统进行了计算机模拟计算和解析分析;讨论了光的入射角、材料的折射率、材料薄膜厚度等参数对椭圆偏振中测量量△和ψ的影响,提供了入射角和基底材料的最优化选择。      

PECVD法沉积SiOxNy及其性质研究

本文采用PECVD技术制备了SiO_xN_y薄膜。用光电子能谱仪和红外光谱仪等对薄膜的结构、组成和其它物理性质作了测量。对温度、功率等工艺参数对薄膜性质的影响作了研究。结果表明,该薄膜是一种非晶态无序结构的、具有良好的抗腐蚀和掩蔽特性的电绝缘介质膜。     

硅胶薄膜声学超材料单胞结构的隔声测量研究

利用铝制框架、硅胶薄膜和钕铁硼磁铁制作薄膜声学超材料单胞试件,用阻抗管法进行材料隔声量测量,绘制出不同附加质量块下薄膜声学超材料的隔声量曲线,分析了硅胶薄膜振动的等效集中参数与其隔声量曲线的对应关系。实验结果表明,薄膜声学超材料的隔声峰值对应频率具有可调性,50~400 Hz的平均隔声量为5dB,峰值超过11dB。在低频声区域,薄膜声学超材料的隔声量大大高于传统隔声材料。     

四甲基硅氧烷制备SiOx低表面能薄膜

采用13.56MHz的射频等离子体聚合装置,以四甲基二硅氧烷(TMDSO)为单体、氧气为反应气体、氩气为电离气体,在载玻片、单晶硅片、PET、BOPP等基体材料上沉积氧化硅低表面能薄膜.在薄膜的制备工艺研究中,通过改变放电方式、工作压强、放电功率、沉积时间、氩气和TMDSO单体的比例等参数,研究氧化硅薄膜的沉积速率;通过傅立叶红外光谱仪(FTIR)、原子力显微镜(AFM)等分析了沉积膜的化学组成和结合状态;利用接触角测定仪测量薄膜的接触角,从而计算薄膜的表面能,最终从结构分析上研究影响SiO2薄膜低表面能内在因素.     

6H-SiC单晶表面ZnO薄膜的制备及其结构表征

利用脉冲激光淀积(PLD)技术在6H-SiC单晶衬底上制备了ZnO薄膜. 利用X射线衍射(XRD), 反射式高能电子衍射(RHEED)和同步辐射掠入射X射线衍射(SRGID)φ扫描等实验技术研究了ZnO薄膜的结构. 结果表明:在单晶6H-SiC衬底上制备的ZnO薄膜已经达到单晶水平, 不同入射角的SRGID结果, 显示了ZnO薄膜内部不同深度处a方向的晶格弛豫是不一致的, 从接近衬底界面处到薄膜的中间部分再到薄膜的表面处, a方向的晶格常数分别为0.3264、0.3272和0.3223nm. 通过计算得到ZnO薄膜的泊松比为0.504, ZnO薄膜与单晶6H-SiC衬底在平行于衬底表面a轴方向的实际晶格失配度为5.84%.     

Chemical bath deposition of MoS2 thin film using ammonium tetrathiomolybdate as a single source for molybdenum and sulphur

Molybdenum disulphide, MoS₂, thin films have been deposited by chemical bath deposition method on glass and quartz substrate using ammonium tetrathiomolybdate as a single source precursor for Mo and S and subjected to vacuum heat treatment at different temperatures. X-ray diffraction of as-deposited film indicated its amorphous character and showed the development of poorly crystalline MoS₂ thin film on increasing annealing temperature. The film has been characterized by energy dispersive X-ray analysis, X-ray photoelectron spectroscopy, scanning electron micrograph and the optical properties also have been studied.     

Effect of crystal structure on photoinduced superhydrophilicity of copper grafted TiO2 nanostructure thin film

In this work, copper grafted titanium dioxide (rutile and brookite) thin films were deposited on glass substrates using the dip-coating method. Field emission scanning electron microscopy and X-ray photoelectron spectroscopy were used to evaluate the surface morphology and properties of the film surfaces. The water contact angle on the film surfaces during irradiation and storage in a dark place was measured by a contact angle analyser. The results indicate that copper grafted titanium dioxide brookite thin film showed higher hydrophilicity than copper grafted titania rutile thin film.     

Preparation and characterization of amorphous manganese sulfide thin films by SILAR method

Manganese sulfide thin films were deposited by a simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method using manganese acetate as a manganese and sodium sulfide as sulfide ion sources, respectively. Manganese sulfide films were characterized for their structural, surface morphological and optical properties by means of X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The as-deposited film on glass substrate was amorphous. The optical band gap of the film was found to be thickness dependent. As thickness increases optical band gap was found to be increase. The water angle contact was found to be 34°, suggesting hydrophilic nature of manganese sulfide thin films. The presence of Mn and S in thin film was confirmed by energy dispersive X-ray analysis.     

Polymer-assisted deposition of co-doped zinc oxide thin films for the detection of aromatic organic compounds

Co-doped Zinc oxide thin films are deposited onto SiO2/Si substrate by polymer-assisted deposition method. The surface morphology, structures and chemical states of the thin films are examined by scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The gas-sensing properties of the thin films upon exposure to aromatic organic compound vapors are also investigated. Co-doping is shown to be very effective in enhancing the response of ZnO thin film to aromatic organic compound.     

新型工艺制备Fe/Cr/Si复合薄膜的结构研究

采用改进的水热法和新型工艺在SUS304不锈钢表面制备了Fe/Cr掺杂SiO2薄膜,并通过扫描电镜(SEM)、X射线衍射(XRD)、电子探针(EPMA)和X射线光电子能谱深度分析(XPS)等检测手段对薄膜结构进行了分析.结果表明膜层主要分为两层:表层为共溶氧化物层;底层为Cr、Fe的氧化物,主要为尖晶石结构和Si网状结构.通过XPS检测结果得知,Si元素的加入不是简单的物理混合,而是与金属元素生成了Si-Fe键,进一步提高了膜层的结合力和耐酸性.     

溶胶-凝胶法在3D-SiC陶瓷表面浸涂Al_2O_3薄膜的研究

以无机盐Al(NO_3)_3·9H_2O为先驱体、水为溶剂,加入不同浓度的胶溶剂HNO_3,采用溶胶-凝胶(Solgel)法制备了勃姆石(γ-AlOOH)溶胶.分别以溶液下降法和真空浸渍法在三维网络碳化硅陶瓷骨架(3D-SiC)表面浸涂γ-AlOOH溶胶,采用不同烧结制度在3D-SiC表面生成了Al_2O_3薄膜.采用X射线衍射仪(XRD)、红外光谱仪(IR)和扫描电子显微镜(SEM)分析了薄膜的物相和显微结构,并检测了薄膜的抗热震性.结果表明,采用真空浸渍法在3D-SiC表面浸涂加入浓度0.22mol/L HNO_3制备的γ-AlOOH溶胶能烧结形成致密平整的Al_2O_3薄膜.升高烧结温度,Al_2O_3晶粒长大,900℃时薄膜最致密且能观测到玻璃态显微结构.薄膜的抗热震性随烧结温度升高而提高.     

直流磁控溅射沉积WO3薄膜电致变色性能研究

以金属钨为靶材,采用直流反应磁控溅射方法,在玻璃上制备电致变色WO3薄膜.利用X射线衍射(XRD)方法对薄膜的结构进行了分析,得出了WO3薄膜的沉积工艺.制备了WO3/TTO/Glass电致变色器件,并对其性能进行了研究.结果表明在Li+注入前后,薄膜的透射率平均变化约50%,具有较好的可逆变色特性;Li+注入后,WO3薄膜中的一部分W6+变为W5+,转化比例约为25%.     

铜薄膜微结构的X射线衍射线形分析

首先采用真空蒸镀法制备了不同厚度的铜薄膜,并对薄膜进行了退火处理;然后用X射线衍射仪测定铜薄膜的衍射谱,最后采用线形分析法对衍射谱进行计算,得到了不同厚度铜薄膜退火前后的晶粒尺寸和微应变。结果表明:真空蒸镀铜薄膜晶粒尺寸随薄膜厚度的增加而增大,微应变随薄膜厚度的增加而减小;退火处理后薄膜晶粒明显长大,薄膜微应变在退火处理后明显减小。     

Cu2ZnSnS4 films by paste coating and their optoelectronic properties

Cu₂ZnSnS₄ (CZTS) thin films were prepared by a paste coating method as the absorb layer of solar cells. This method is more eco-friendly using ethanol as solvent and more convenient than traditional sol–gel method. The effects of sulfurization temperature on properties of thin film were studied. The results of X-ray diffraction and Raman spectroscopy showed the formation of kesterite structure of CZTS films. The scanning electron microscopy images revealed that CZTS thin film obtained at 550 °C were compact and uniform. The optical band gap of the CZTS film was about 1.5 eV, and the CZTS film had an obvious optoelectronic response. Moreover, CZTS solar cell was prepared with a conversion efficiency of 0.47 %.