PLA-PPC-淀粉的溶液共混改性

将聚乳酸(PLA)、糊化淀粉与聚碳酸亚乙酯(PPC)进行溶液共混并浇注成膜,对共混膜的力学性能和热性质进行表征;通过正交试验设计研究三元共混组成、增塑剂种类及用量对PLA增韧增塑改性的影响。结果表明:共混组成对于共混膜的断裂伸长率及拉伸强度均是显著影响因素;正交试验最优方案制得共混膜的断裂伸长率比纯PLA膜增加200.98%,拉伸强度比纯PLA膜降低1.09%;PPC的加入是共混物韧性提高的主要因素,而淀粉对产物的力学性能没有优化;同时,三元共混物的热分解温度比原料树脂提高,热分解速度下降,说明改性产物热稳定性有所提高。     

聚乳酸热收缩薄膜的制备与拉伸回复性能研究

目的 研究2种环保型改性剂碳酸丙烯酯(PC)和聚碳酸亚丙酯二醇(PPC)对聚乳酸(PLA)的增塑效果,以及PLA/PC、PLA/PPC这2种热收缩薄膜在拉伸回复过程中的热收缩性能、结晶性能和透氧性能。方法 采用双螺杆挤出机将PC、PPC分别与PLA共混改性,采用差示扫描量热仪(DSC)、傅里叶变换衰减全反射红外光谱(ATR–FTIR)、X射线衍射仪(XRD)、电子万能试验机、压差法气体渗透仪研究PC、PPC分别对PLA的改性效果,以及PLA/PC、PLA/PPC 2种热收缩薄膜在拉伸回复过程中的热收缩性能、结晶性能和透氧性能。结果 PC改性后的热收缩薄膜拉伸强度降低至16.8 MPa,断裂伸长率提高至26.6%,氧气透过率(To)可以达到1 020.4 cm3/(m²·d·Pa),而回复率(R_r)仅有27.5%。PPC改性后的热收缩薄膜拉伸强度降低至23.6MPa,断裂伸长率提高至12.5%,且PLA/PPC热收缩膜的R_r可以达到83.3%;在拉伸后T_o仅为915.8 cm³/...     

硅烷化改性木薯淀粉/聚碳酸亚丙酯共混膜的结构及耐水性EI北大核心CSCD

以三甲基氯硅烷(TMCS)对木薯淀粉进行疏水化处理,并通过热压混合法制备了硅烷化改性木薯淀粉/聚碳酸亚丙酯(TMCS-Starch/PPC)共混膜。采用傅里叶变换红外光谱、X射线衍射以及扫描电子显微镜对共混膜进行表征。结果表明,三甲基氯硅烷基团被成功引入到木薯淀粉颗粒表面;热压成型后TMCS-Starch由结晶态转变为无定形态,并与PPC具有明显的氢键作用。研究了共混膜的力学性能和耐水性。结果表明PPC可以明显改善共混膜的韧性和耐水性能,当TMCS-Starch与PPC的质量比为3/7时,共混膜的断裂伸长率达到601.2%,吸水率和淀粉溶出率分别较TMCS-Starch膜降低了17.15%和85.29%。     

高氯酸锂增容聚乳酸/聚碳酸亚丙基酯共混体系

采用高氯酸锂为聚乳酸(PLA)/聚碳酸亚丙基酯(PPC)共混材料的增容剂,通过研究高氯酸锂对PLA/PPC共混体系相容性、热性能及力学性能的影响发现,高氯酸锂的加入能有效改善PLA与PPC之间的相界面,显著缩短体系的半结晶时间(最高达538.7%),使材料的断裂伸长率提高了235%。同时,通过调节高氯酸锂与PPC的共混顺序,并结合傅里叶红外光谱探究分析了高氯酸锂对PLA/PPC共混体系的增容机理,发现高氯酸锂通过对PPC的络合作用及PLA的电荷作用增强PLA与PPC之间作用力。     

热塑性乙酰化淀粉/聚乳酸的性能及形态

采用熔融共混的方法制备了热塑性乙酰化淀粉(TPAS)/聚乳酸(PLA)复合材料, 研究了TPAS/PLA复合材料力学性能、 热性能和形态结构。TPAS以乙酰化改性淀粉为基体, 甘油为增塑剂。实验结果表明: 随着TPAS含量的增加, TPAS/PLA复合材料韧性明显提高, 当TPAS加入量为40%(质量分数)时, 断裂伸长率提高4倍多, 同时TPAS的加入对复合材料的热稳定性影响不大。DSC、 DMTA和SEM分析结果表明, PLA与TPAS是不相容的。     

异氰酸酯接枝改性淀粉/聚碳酸亚丙酯共混物及性能

为提高淀粉(Starch)与聚碳酸亚丙酯(PPC)的界面作用力,在淀粉颗粒与PPC复合时加入二苯基甲烷二异氰酸酯(MDI),进行反应性共混改性,通过FTIR、DSC、TGA、SEM、拉伸测试等手段对共混物进行表征,验证了接枝作用的发生,同时讨论了在熔融状态下,MDI对共混物接枝改性的作用效果.结果表明:有PPC大分子接枝到淀粉颗粒表面上.正是接枝的PPC在两相间充当兼容剂,提高了其相容性,增强了PPC相与淀粉颗粒之间的界面粘接力,使得形态结构稳定化,从而使得力学性能和热稳定性得到有效改善.     

生物可降解PLA/PHBV共混包装薄膜的热行为和力学性能研究

采用溶液铸涂法,以3-羟基丁酸酯-3-羟基戊酸酯共聚物(PHBV)对生物可降解聚乳酸(PLA)进行增韧改性,制备出不同配比的PLA/PHBV生物可降解共混包装薄膜,研究了PHBV的添加对共混包装薄膜的热行为和力学性能的影响规律。通过差示扫描量热法(DSC)测试发现,随着PHBV含量的增加,共混包装薄膜的玻璃化温度(Tg)、结晶温度(Tc)和熔点(Tm)都呈现下降趋势;热重分析法(TG)测试表明,PHBV的加入使共混包装薄膜的热稳定性变差;通过力学性能测试发现,当PHBV加入后,共混包装薄膜的拉伸强度和拉伸模量降低,而断裂伸长率明显增加,薄膜的韧性得到了改善。     

PLA/MgAlCu-LDH复合材料的制备、表征及性能研究

用溶液插层法制备了PLA/MgAlCu-LDH共混溶液,通过涂膜法制备了不同MgAlCu-LDH含量的PLA/MgAlCu-LDH复合膜,采用扫描电镜(SEM)、红外光谱(FTIR)、X射线衍射(XRD)、力学性能测试仪器对制备的复合膜的形貌、结构及性能进行测试表征。结果表明:部分PLA分子链插入到MgAlCu-LDH片层间隙中,使得MgAlCu-LDH层间距变大,MgAlCu-LDH作为插层剂对整个共混聚合物的韧性和强度有明显的影响;PLA/MgAlCu-LDH复合材料的杨氏模量随MgAlCu-LDH含量的增加而增加,加入少量MgAlCu-LDH时PLA/MgAlCu-LDH复合材料的抗拉强度、屈服强度和断裂伸长率均增加,在室温下拉伸时,PLA/MgAlCu-LDH 3%(质量分数)复合材料的抗拉强度、屈服强度和断裂伸长率分别比PLA提高14.5%、11.5%和23.7%。     

生物可降解PLA/PCL共混包装薄膜的结构与阻隔性能研究

为了改善包装用聚乳酸(PLA)薄膜的韧性,本文选用生物可降解高分子材料聚己内酯(PCL)与其进行共混,并加入柠檬酸三丁酯(TBC)对这两组分进行增容。通过溶液铸涂法制备不同配比的PLA/PCL共混包装薄膜,研究了PCL的加入对PLA薄膜的结构及性能的影响。X射线衍射仪(XRD)测试结果表明,随着PCL的加入,可以提高PLA/PCL共混包装薄膜的相对结晶度。热重分析法(TG)测试表明,PCL的加入使PLA的起始分解温度降低,但是其终止分解温度有所升高。通过对共混薄膜的阻隔性能测试可知,PCL的加入,使共混薄膜的水蒸气和氧气的渗透性降低,其阻隔性能得到改善。从光学性能测试中发现,增加PCL的含量使共混薄膜的透光率降低。     

乙酰柠檬酸三正丁酯增塑改性淀粉/聚乳酸共混材料的结构与性能

以乙酰柠檬酸三正丁酯(ATBC)作为增塑剂,采用熔融共混法制备了淀粉/聚乳酸(PLA)共混材料。采用红外吸收光谱、扫描电镜、X射线衍射、热重分析及力学性能测试方法研究了ATBC对淀粉/PLA共混材料结构和性能的影响。结果表明,ATBC能与PLA和淀粉分子发生强相互作用,破坏淀粉/PLA共混物中原有的氢键,降低淀粉/PLA共混物的结晶度;在淀粉/PLA共混物中加入ATBC可提高PLA与淀粉的界面结合力,改善其相容性,进而改变淀粉/PLA共混材料的结构与性能。ATBC不影响共混材料的热稳定性,但能降低淀粉/PLA共混物的玻璃化转变温度(Tg)和熔点(Tm),改善加工性能;ATBC能显著提高淀粉/PLA共混材料的柔韧性,含20%ATBC的淀粉/PLA共混材料的断裂伸长率可达到365%。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.