带ESD保护的2.4GHz低噪声放大器的分析与设计

分析了静电放电(ESD)保护对源极电感负反馈低噪声放大器(LNA)的输入阻抗匹配和噪声匹配的影响。给出了带ESD保护的低噪声放大器在功耗限定的条件下同时满足功率匹配和噪声匹配的优化方法,基于该方法,采用0.18μm RF CMOS工艺设计了应用于无线传感网(WSN)的2.4GHz低噪声放大器。测试结果表明,低噪声放大器噪声系数(NF)为1.69dB,增益为15.2 dB,输入1 dB压缩点和输入三阶截点(IIP3)分别为-8dBm和1dBm,在1.8V电源电压下消耗电流3.1mA。     

0.18μm CMOS 2.5Gb/s光接收机跨阻前置放大器的设计

给出了一种利用TSMC 0.18μm CMOS工艺实现的2.5 Gb/s跨阻前置放大器.此跨阻放大器的增益为66.3 dBΩ,3 dB带宽为2.18 GHz,等效输入电流噪声为112.54 nA.在标准的1.8 V电源电压下,功耗为7.74 mW.输入光功率为-10 dBm时,PCML单端输出信号电压摆幅为165 mVp-p.模拟结果表明该电路可以工作在2.5 Gb/s速率上.     

CMOS超宽带低噪声放大器设计

设计了一款工作在3．0-5．0GHz频段内的,具有带外抑制功能的超宽带低噪声放大器（UWBLNA）,该电路采用TSMC0．18μmCMOS工艺,许基于窄带PCSNIM噪声优化技术,再在传统输入匹配网络上引入二阶切比雪夫滤波器结构和带外抑制电容。仿真结果表明,在整个超宽带频段内,平均正向增益S21约为13．9dB,且通带边缘比较平滑,稳定性较好,噪声系数NF平均值约为2．5dB,输入回波损耗S11〈-13dB,输出回波损耗S22〈-15dB,且输入输出阻抗匹配良好。     

2GHz宽阻带低噪声放大器的协同设计

去除了低噪声放大器(LNA)与带通滤波器之间的50 Ω的匹配界面.用带通滤波器代替低噪声放大器的输出匹配网络,将二者进行协同设计.采用的滤波器具有宽阻带.能够直接滤除二次谐波.仿真结果表明,协同设计后,LNA的稳定性得到了有效的改善,在整个频段内达到了绝对稳定;在中心频率2 GHz处,增益为14.593 dB,噪声系数为2.668 dB;谐波抑制效果也很明显,二次谐波处S21为-71.140 dB.     

小型地磁传感器的低噪声前置放大电路设计

一些小型地磁传感器输出噪声电压水平在10 nV/Hz左右,现有nV级噪声水平的前置放大器体积太大难以满足其信号调理需求.针对这个问题,本文阐述了低噪声放大电路输入级设计原理,利用Multisim对输入级电路等效输入噪声电压等指标进行仿真,研制出一种基于差分输入的小型低噪声前置放大电路.给出了电路关键性能指标的仿真和测试结果,测试结果表明该电路具有良好的噪声特性和共模抑制比,噪声电压水平仅为3.7 nV/(Hz)～(1/2)@3.5 kHz,共模抑制比110 dB,增益为100～1 000连续可调.     

GSM-R光纤直放站低噪声放大器模块的设计

对满足铁路专用数字移动通信系统(GSM-R)标准的光纤直放站低噪声放大器模块进行了设计、制造和测试.放大器模块由四级放大电路构成,可提供高的增益和线性度.输入级采用双平衡放大结构,不仅能改善放大器级间匹配性,而且由于具有冗余备份功能,可提高模块的可靠性.采用数模混合自动增益控制技术保证低噪声放大器的输出功率稳定和高动态范围.测试结果表明,该模块最大增益达到60dB,增益调节范围大于30dB,互调衰减小于-60dBc,噪声系数小于1.0dB,体现了优异的线性度和噪声性能.该模块完全达到GSM-R高铁直放站的设计要求,目前已通过南京泰通科技的实际应用测试,并开始试应用于铁路系统中.     

基于0.18μm CMOS工艺、适于WCDMA的低噪声放大器设计

介绍在功耗约束条件下低噪声放大器最小噪声系数的一种设计和优化方法。该放大器通过0.18um CMOS工艺设计实现,其工作频率为2.14GHz。仿真结果表明,在输入输出匹配到50欧姆,电源电压取1.8伏情况下,直流工作电流为5.36毫安,噪声系数为0.655dB,增益为16.64dB,P-1dB为-12dBm,IIP3为6dBm。版图面积为0.37mm*0.58mm。     

宽带驱动放大器MMIC的SMD封装

研究了一种采用Rogers 4003型有机基板材料和PCB工艺制造的MMIC一级封装结构,该封装结构与SMT工艺兼容,具有良好的散热性能和较低的成本,可用于X＆Ku波段驱动放大器芯片.采用三维电磁场仿真软件对封装结构进行了优化设计,制备了封装结构样品,并采用HP 8722D型高频网络分析仪实测了封装后的X＆Ku波段驱动放大器芯片性能.测试结果表明,在6～18GHz频段内,封装后芯片的增益维持在20dB以上,反射小于-10dB,性能与裸芯片十分接近.关键词:MMIC,封装,有机基板材料,SMT,三维电磁场仿真     

宽带零中频接收机的设计

设计了采用零中频解调方式的宽频带射频接收机.该接收机选用LT5575和LT6600-20芯片实现解调、基带信号滤波和放大的功能.所实现的接收机在1.5～2.7 GHz工作频段内实现较好的解调性能,解调信号的带宽为20 MHz,增益约为13 dB,射频信号的最小接收功率为-25 dBm.     

基于E-PHEMT技术的宽带、高线性和微型封装放大器研究

基于Ga As E-PHEMT工艺,采用负反馈和宽带有耗匹配技术,实现宽带、高线性MMIC放大器芯片;基于多层陶瓷工艺,制作密封性好、可靠性高的封装外壳。结合二者,基于多物理场联合设计、仿真和优化,实现宽带、高线性和小型化功率放大器。该放大器频率覆盖DC~3GHz,增益大于14d B,P-1功率大于23.5d Bm;P-1下PAE大于40%,OIP3大于39dbm,噪声小于3.4d B,输入驻波和输出驻波小于1.5(2GHz)。采用恒流镜像偏置,+5V单电源供电,工作电流小于110m A,封装尺寸仅为4.5mm×2.5mm×1.8mm。可广泛应用于通信等领域。     

A High Gain,Noise Cancelling 3.1-10.6 GHz CMOS LNA for UWB Application

With the rapid development of ultra-wideband communications, the design requirements of CMOS radio frequency integrated circuits have become increasingly high. Ultra-wideband (UWB) low noise amplifiers are a key component of the receiver front end. The paper designs a high power gain (S₂₁) and low noise figure (NF) common gate (CG) CMOS UWB low noise amplifier (LNA) with an operating frequency range between 3.1 GHz and 10.6 GHz. The circuit is designed by TSMC 0.13 μm RF CMOS technology. In order to achieve high gain and flat gain as well as low noise figure, the circuit uses many technologies. To improve the input impedance matching at low frequencies, the circuit uses the proposed T-match input network. To decrease the total dissipation, the circuit employs current reused technique. The circuit uses he noise cancelling technique to decreases the NF. The simulation results show a flat S₂₁>20.81 dB, the reverse isolation (S₁₂) less than -48.929 dB, NF less than 2.617 dB, the minimum noise figure (NF_min)=1.721 dB, the input return loss (S11) and output return loss (S₂₂) are both less than -14.933 dB over the frequency range of 3.1 GHz to 10.6 GHz. The proposed UWB LNA consumes 1.548 mW without buffer from a 1.2 V power supply.     

A Technique for Differential Noise Figure Measurement of Differential LNAs

This paper presents an approach to measure the noise figure of a differential low-noise amplifier (LNA) based on familiar ldquocold-hotrdquo single-ended noise figure measurements. To demonstrate the usefulness of this approach, measurement results are presented for a wideband differential LNA designed to be used as the first stage of the receiver in the Square Kilometre Array radio telescope. The presented LNA achieves less than 0.41 dB of differential noise figure in the 700 MHz to 1.4 GHz band, differential S₁₁ <-13 dB, differential S₂₁ between 18 and 14 dB, single-ended output P1 dB of -8.2 dBm, and output IP3 of -1 dBm while consuming 81 mA from a 1.3-V supply. The approach of measuring the differential noise figure may be automated with one switch at the output of a standard noise source and one switch at the input to a standard noise figure analyzer or a noise figure meter, allowing for automated noise figure measurements of differential LNAs based on the differential pair topology.     

Compact and low power consumption K-band differential low-noise amplifier design using transformer feedback technique

A compact and low power consumption three-stage differential K-band low-noise amplifier (LNA) with a 10 dB differential mode gain at 25.8 GHz and a 3 dB bandwidth of 22.8-26.8 GHz by using a transformer feedback technique with standard 0.18 mum CMOS technology is presented. The minimum input and output return losses over a 3 dB bandwidth are 11 and 7 dB, respectively. Fully differential characterisations of the noise figure (NF) and the common mode rejection ratio (CMRR) are demonstrated. The obtained NF and CMRR are 4.84 dB and 23.3 dB at 25.8 GHz. The input 1 dB compression point and input third-order intercept point are 17.8 and 5 dBm, respectively. The overall power consumption is 25.6 mW. This three-stage differential LNA only occupies an area of 0.63 x 0.88 mm².     

Precision Measurement of Antenna System Noise Using Radio Stars

This paper reviews the National Bureau of Standards (NBS) preision noise measurements program for antenna systems which have been made using Cassiopeia A and the moon. The Earth Terminal Measurement System (ETMS) was developed by NBS to make measurements of figure of merit (G/T), and the noise equivalent flux (NEF). The accuracy of the noise measurements are, typically, between 5 and 15 percent for systems with antenna gains between 51 and 65 dB and frequencies between 1 and 10 GHz. Key words?antenna gain; antenna half-power beamwidth; atmospheric loss; Cassiopeia A; earth terminal measurement system; figure of merit; moon; noise equivalent flux; noise measurement; radio stars; satellite communication.     

A High Gain,Noise Cancelling 2515-4900 MHz CMOS LNA for China Mobile 5G Communication Application

With the development of the times, people’s requirements for communication technology are becoming higher and higher. 4G communication technology has been unable to meet development needs, and 5G communication technology has emerged as the times require. This article proposes the design of a low-noise amplifier (LNA) that will be used in the 5G band of China Mobile Communications. A low noise amplifier for mobile 5G communication is designed based on Taiwan Semiconductor Manufacturing Company (TSMC) 0.13 μm Radio Frequency (RF) Complementary Metal Oxide Semiconductor (CMOS) process. The LNA employs self-cascode devices in currentreuse configuration to enable lower supply voltage operation without compromising the gain. This design uses an active feedback amplifier to achieve input impedance matching, avoiding the introduction of resistive negative feedback to reduce gain. A common source (CS) amplifier is used as the input of the low noise amplifier. In order to achieve the low power consumption of LNA, current reuse technology is used to reduce power consumption. Noise cancellation techniques are used to eliminate noise. The simulation results in a maximum power gain of 22.783, the reverse isolation (S₁₂) less than -48.092 dB, noise figure (NF) less than 1.878 dB, minimum noise figure (NFmin)=1.203 dB, input return loss (S₁₁) and output return loss (S₂₂) are both less than -14.933 dB in the frequency range of 2515-4900 MHz. The proposed Ultra-wideband (UWB) LNA consumed 1.424 mW without buffer from a 1.2 V power supply.     

Radio-frequency front-end for 5 GHz wireless local area network transceivers

A transceiver front-end for 5 GHz wireless local area network applications has been designed and implemented in a low-cost 46 GHz f_r pure-silicon bipolar technology. The transceiver front-end adopts a superheterodyne sliding-IF architecture and consists of a down-converter, an up-converter and an LO frequency synthesiser. By exploiting a 1 bit variable-gain low-noise amplifier, the down-converter is able to provide an excellent noise figure of 4 dB while ensuring an input 1 dB compression point of 210 dBm with a current consumption of 25 mA from a 3 V supply voltage. The transmitter front-end is implemented by means of a current-reuse variable-gain up-converter. The circuit provides an output 1 dB compression point of 5.3 dBm although consuming only 45 mA from a 3 V supply voltage. Moreover, a linear-in-dB gain control characteristic is achieved over a 35 dB dynamic range. The LO frequency synthesiser is implemented by means of an integer-N phase-locked loop. It features a phase noise of 2117 dBc/Hz at 1 MHz offset from the centre frequency of 4.1 GHz and exhibits a tuning range of 1.2 GHz, from 3.47 to 4.65 GHz. The LO frequency synthesiser draws 20 mA from a 3 V supply voltage.     

宽带铋基掺铒光纤放大器增益及噪声特性研究

利用Er3 离子四能级结构速率方程组和光功率传输方程组,数值模拟了铋基掺铒光纤放大器(EDFA)的增益及噪声特性,模拟结果与实验报道结果取得了很好的一致。同时,详尽地分析了增益及噪声特性与光纤长度、泵浦功率和输入信号功率的关系,优化了放大器的性能,从理论上得出一个20dB增益带宽达76nm、噪声系数接近4dB的铋基EDFA。研究表明了铋基掺铒光纤放大器适合用作于现代DWDM系统中C L波段的光纤放大器。     

Reduced transposed flicker noise in microwave oscillators using gaas-based feedforward amplifiers

Transposed flicker noise reduction and removal is demonstrated in 7.6 GHz microwave oscillators for offsets greater than 10 kHz. This is achieved by using a GaAs-based feedforward power amplifier as the oscillation-sustaining stage and incorporating a limiter and resonator elsewhere in the loop. 20 dB noise suppression is demonstrated at 12.5 kHz offset when the error correcting amplifier is switched on. Three oscillator pairs have been built. A transmission line feedback oscillator with a Qo of 180 and two sapphire-based, dielectric resonator oscillators (DROs) with a Qo of 44,500. The difference between the two DROs is a change in the limiter threshold power level of 10 dB. The phase noise rolls-off at (1/f)(2) for offsets greater than 10 kHz for the transmission line oscillator and is set by the thermal noise to within 0-1 dB of the theoretical minimum. The noise performance of the DROs is within 6-12 dB of the theory. Possible reasons for this discrepancy are presented.     

Wideband circularly polarised slot antenna

A wideband circularly polarised slot antenna is presented. The slot antenna is fed by four microstrip line feeds orientated to have relative phases of 0deg, 90deg, 180deg and 270deg using a feed network comprising a pair of broadband 90deg hybrid. The proposed antenna delivers measured and simulated impedance bandwidths of 77.8% (1.02-2.32 GHz) and 89.1% (1.02-2.66 GHz), respectively, for standing wave ratio (SWR) < 2, measured and simulated axial-ratio bandwidths of 88.9% (1-2.6 GHz) and 81% (1.1-2.6 GHz), respectively, for axial ratio < 3 dB and measured and simulated gain bandwidths of 33% (1.5-2.1 GHz) and 27% (1.6-2.1 GHz), respectively, for gain >3 dB. A good agreement is observed between simulation and measurement.     

A low-noise latching comparator probe for waveform sampling applications

A new latching comparator probe is described. The probe is being developed as part of an effort to augment voltage measurement capability in the 10 Hz to 1 MHz frequency range. The probe offers an input voltage range of /spl plusmn/10 V, input impedance of 1 M/spl Omega/ and root mean square noise referred to the input as low as 55 /spl mu/V. The probe's 3-dB bandwidth is approximately 20 MHz. Total harmonic distortion is as low as -93 dB at 50 kHz. Gain flatness is within /spl plusmn/10 /spl mu/V/V from 100 Hz to 100 kHz. Improved step settling performance is achieved using a technique that minimizes circuit thermal errors. The probe's input range can be extended with a frequency-compensated 1-M/spl Omega/ input impedance attenuator allowing measurement of pulses in the microsecond regime up to 100 V. The attenuator can be compensated further with a digital filtering algorithm to achieve gain accuracy better than 100 /spl mu/V/V.