异质外延自组织量子点弹性应变场分布的研究

通过有限元法,在ANSYS环境下,利用二维模型对自组织应变外延异质结透镜形量子点的应力应变分布情况进行了系统分析。分析过程分别考虑了孤立量子点系统、单层多量子点系统以及量子点超晶格系统3种情况,结果表明单层和超晶格多量子点系统衬底之间存在的长程相互作用力对量子点及其周围的应力应变分布有显著影响。在计算应变对多量子点系统的电子结构的影响时,必须将多量子点系统整体考虑。     

透镜形量子点的盖层和高宽比对应变场分布的影响

对透镜形自组织生长量子点的应变分布进行了研究。主要分析了透镜形状的量子点形貌对应变分布的影响,针对开放量子点（无盖层）和非开放量子点（有盖层）情况分别进行了讨论。结果表明,无论有无盖层,横向大尺寸量子点内部的应变分布趋向于均匀,无盖层量子点与有盖层情况相比内部应变释放程度大,甚至在量子点顶部有应变过释放情况,这一现象可以定性解释量子点生长的高度受限、量子点后续生长中出现的量子点塌陷和盖层生长停顿后产生的量子点“挖空”现象。     

基于InP衬底的应变和应变补偿的InGaAs／InAlAs材料的高分辨X射线衍射分析

高分辨率X射线衍射技术被用来分析基于InP衬底的应变的InGaAs和InAlAs单层材料和应变补偿的InGaAs/InAlAs超晶格材料.通过倒空间mapping得到的单层材料的错向角大约为10-3度,可以忽略不计.通过摇摆曲线得到了单层材料的组分和体失配度,接着单层材料的结果被用来分析在相同的条件下利用MBE技术生长的超晶格材料.利用倒空间mapping精确得到了超晶格的平均垂直失配度和各层的厚度,通过X射线模拟软件得到的超晶格材料的模拟曲线和实测曲线吻合的很好.     

应变补偿1eV吸收带边GaInAsN/GaAs超晶格太阳能电池格层设计

本文采用计算超晶格电子态常用的Kronig-Penney模型和形变势理论,从理论上探讨了GaInNAs/GaAs超晶格能带系统的能带结构,计算得到了能带结构随各亚层参量变化的一般性规律、超晶格的能量色散关系、应变造成的影响以及不同亚层厚度的系统禁带宽度。计算了超晶格的阱层材料在不同的组分选择下,GaInAsN/GaAs超晶格吸收带边为1eV的超晶格相关参数的对应关系以及超晶格应变状态。计算表明采用高In低N的GaInNAs材料作为GaInNAs/GaAs超晶格的阱层时更有利于获得高质量且较厚的GaInNAs/GaAs超晶格有源区,并且此时可以获得较好的应变补偿;进一步对超晶格太阳能电池的内量子效率进行了模拟计算,分析了1eV吸收带边GaInAsN/GaAs超晶格太阳能电池对提高整体光电转换效率的可行性。     

应力补偿技术在InAs/GaAs量子点中的研究现状

通过在多层量子点体系中引入应变补偿层,改变量子点系统的应力场分布,可以控制生长过程中量子点的大小均匀性和密度,最终获得高质量、高密度的多层量子点体系,应用到量子点光电器件中,可改善器件的电学和光学性能。介绍了应变补偿层在量子点体系中作用的原理,常用的应变补偿材料体系,以及目前国内外对应变补偿技术的研究状况,最后提出了现存的问题和今后的发展方向。     

超晶格半导体材料及其应用(3)

三、应变超晶格材料以前研究超晶格材料时,除了AlGaAs/GaAs系以外,对其他物质结合而形成超晶格的研究工作不很积极,原因是它们之间的晶格常数不同,会引起薄膜之间产生失配位错而得不到良好质量的晶体。但是,如果多层薄膜的厚度十分薄时,在晶体生长时反而不怎么产生缺陷,也就是在弹性形变限度之内的超薄膜中,晶格本身发生应变而消除缺陷的产生。巧妙地利用这种性质,目前开始研究晶格常数不同材料形成的应变超晶格的制备。在应变超晶格中发现了一般超晶格中没有的新特性。这讲将对应变超晶格的设计理论和研究动向进行介绍。     

MOCVD 生长及 TEM 表征 GaAs/Al_xGa_(1-x)As 量子异质结构材料

本文报道 MOCVD 生长 GaAs/Al_xGa_(1-x)As 量子异质结构材料(超晶格、量子阱及量子共振隧穿二极管),采用横断面透射显微术表征了样品的界面结构。实验表明:多量子阱与超晶格的周期性良好,层与层之间界面清晰,采用[100]带轴入射,观察到超晶格的 TEM 卫星衍射斑,测量到量子阱中电子的子能级跃迁吸收。研究了生长工艺和材料结构的关系,分析了影响 RT 器件的因素。     

快速热退火对多层Ge量子点晶体质量的影响

使用超高真空化学气相淀积(UHV/CVD)设备在Si衬底上生长多层Ge量子点,用双晶X射线衍射(DCXRD)、拉曼光谱(Raman)等手段表征在不同条件下快速热退火的Ge量子点材料的组分、应力等特性,研究了快速热退火对多层Ge量子点晶体质量的影响.结果表明:随着退火温度的升高,量子点中Ge的组分下降,量子点应变的弛豫程...     

半绝缘Si/SiO_2超晶格结构在交流电场下的电致发光特性

本文研究了SiO2和Si层的厚度分别为2-8nm和1.5-3nm的Si/SiO2超晶格在交流电场下的电致发光特性。以超晶格中SiO2层内加速的过热电子碰撞激发纳米Si层中密集的硅量子点,获得了Si/SiO2超晶格蓝绿色交流电致发光。Si/SiO2超晶格的电致发光亮度随电压升高呈现指数增强,最高发光亮度可达到1.4cd/m2。随着Si层厚度的增加,Si/SiO2超晶格电致发光谱的低能侧发光峰相对增强,可以归结为纳米Si层厚度对其中硅量子点尺寸分布的限制作用。当超晶格中SiO2层厚度小于过热电子的平均自由程时,过热电子的平均能量减小导致短波侧的发光强度迅速下降,电致发光强度随之迅速降低。     

温度对InAs/GaAs量子点生长影响的动力学蒙特卡罗模拟

采用动力学蒙特卡罗模型模拟了GaAs应变弛豫图形衬底上InAs量子点阵列生长早期阶段,温度对浸润层之上第一层亚单原子层阶段的影响.通过对生长表面形态、岛平均大小、岛大小分布及其标准差等方面的研究,证明了通过控制温度能够得到大小均匀、排列有序的岛阵列,这对后续量子点生长的定位和尺寸控制有重要影响.     

Self-organized ordering in self-assembled quantum dot superlattices

Self-organized vertical and lateral ordering in self-assembled quantum dot superlattices is based on long-range elastic interactions between the growing dots on the surface and those buried in the previous superlattice layers. These interactions may lead to a correlated dot nucleation and to the formation of ordered superstructures. For various materials systems different types of structures may be formed, ranging from vertically aligned dot superlattices for Si–Ge or III–V semiconductors to an fcc-like ABCABC… stacking in IV–VI materials. These differences are caused by the given elastic anisotropy of the superlattice materials. From systematic theoretical calculations, for all materials with high elastic anisotropy and growth orientations parallel to an elastically soft direction, layer-to-layer dot correlations inclined to the growth direction may be formed. Further changes in the dot correlations are caused by the modification of the elastic strain fields by the finite extent and shape of the buried islands. This is illustrated for IV–VI PbSe/PbEuTe dot superlattices, where either vertically aligned or fcc-stacked dot arrangements are formed as a function of spacer thickness.     

Tuning the piezoelectric fields in quantum dots: microscopic description of dots grown on (N11) surfaces

We theoretically investigated the elastic deformation and piezoelectric field in InAs quantum dots grown on (N11) GaAs substrates. Particular attention was given to the influence of the substrate orientation on both the volume deformation of the dot and the strain-induced piezoelectric field. The piezoelectric effects are enhanced by the lower symmetry growth directions. The influence of the piezoelectric fields on the electron and hole ground states for a (N11) quantum dot was also investigated within the effective mass approximation. We find a significant dependence of the fundamental transition energy on the polarity of the substrate's surface.     

张应变GaAs层引入使InAs/InP量子点有序化排列的机理研究

采用ＬＰ－ＭＯＶＰＥ技术,在（００１）ＩｎＰ衬底上生长的ＩｎＡｓ／ＩｎＰ自组装量子点是无序的。为了解决这个问题,在ＩｎＰ衬底上先生长张应变的ＧａＡｓ层,然后再生长ＩｎＡｓ层,可得到有序化排列的量子点。本文对张应变ＧａＡｓ层引入使量子点有序化排列的机理进行了分析,为生长有序化、高密度,均匀性好自组装量子点提供了依据。     

Study of various strain energy distribution in InGaN/GaN multiple quantum wells

The formation of In-rich quantum dot structures will induce strain energy in the quantum well layer, forming the clusters and stacking faults influencing the optical properties. Our results showed different QW widths with the formation of various In-rich quantum dot structures and different levels of strain energy. Upon thermal annealing, energy relaxation resulted in the reshaping of quantum dots and hence the changes of optical properties. The results of temperature variations of PL spectral peak, integrated PL intensity and PL decay time showed consistent trends in varying strain energy distribution.     

Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness

We have investigated the effect of post-growth rapid thermal annealing on self-assembled InAs/GaAs bilayer quantum dot samples having very thin barrier thickness (7.5-8.5 nm). In/Ga interdiffusion in the samples due to annealing is presumed to be controlled by the vertical strain coupling from the seed dots in bilayer heterostructure. Strain coupling from embedded seed QD layer maintains a strain relaxed state in active top islands of the bilayer quantum dot sample grown with comparatively thick spacer layer (8.5 nm). This results in minimum In/Ga interdiffusion. However controlled interdiffusion across the interface between dots and GaAs barrier, noticeably enhances the emission efficiency in such bilayer quantum dot heterostructure on annealing up to 700 °C.     

Directed self-assembly of quantum structures by nanomechanical stamping using probe tips

We demonstrate that nanomechanically stamped substrates can be used as templates to pattern and direct the self-assembly of epitaxial quantum structures such as quantum dots. Diamond probe tips are used to indent or stamp the surface of GaAs(100) to create nanoscale volumes of dislocation-mediated deformation, which alter the growth surface strain. These strained sites act to bias nucleation, hence allowing for selective growth of InAs quantum dots. Patterns of quantum dots are observed to form above the underlying nanostamped template. The strain state of the patterned structures is characterized by micro-Raman spectroscopy. The potential of using nanoprobe tips as a quantum dot nanofabrication technology are discussed.     

Electronic structure and optical property of semiconductor nanocrystallites

Semiconductor nanostructures show many special physical properties associated with quantum confinement effects, and have many applications in the opto-electronic and microelectronic fields. However, it is difficult to calculate their electronic states by the ordinary plane wave or linear combination of atomic orbital methods. In this paper, we review some of our works in this field, including semiconductor clusters, self-assembled quantum dots, and diluted magnetic semiconductor quantum dots. In semiconductor clusters we introduce energy bands and effective-mass Hamiltonian of wurtzite structure semiconductors, electronic structures and optical properties of spherical clusters, ellipsoidal clusters, and nanowires. In self-assembled quantum dots we introduce electronic structures and transport properties of quantum rings and quantum dots, and resonant tunneling of 3-dimensional quantum dots. In diluted magnetic semiconductor quantum dots we introduce magnetic-optical properties, and magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot.     

水溶性掺杂型CdZnTe量子点的制备及表征

以Zn离子为掺杂材料,L-半胱氨酸为稳定剂,采用高温高压的水热合成法制备出水溶性的掺杂型CdZnTe量子点,有效地减少了量子点表面的缺陷,降低了CdTe量子点的毒性,使得制备出的CdZnTe量子点的生物相容性良好,具有单分散性好、发射范围宽、量子产率高等优点,将会在生化检测及生物医学领域大有作为。