共查询到19条相似文献,搜索用时 203 毫秒
1.
掺铝氧化锌(AZO)薄膜具有较高的透过率,较小的电阻率等优良的光电性能,使其在太阳能电池电极及各种显示器中具有广阔的应用前景。本文概述了AZO薄膜的结构、光电性能的表征方法,重点介绍了单层AZO膜以及AZO基多层复合薄膜的设计理论基础、影响薄膜性能的因素以及研究现状,除此之外,还对AZO薄膜的应用情况进行了概述,并对AZO薄膜发展前景进行了展望。 相似文献
2.
在室温下采用射频磁控溅射粉末靶在玻璃基底上制备掺铝氧化锌(AZO)薄膜,采用扫描电镜、X射线衍射仪、紫外可见分光光度计和霍尔效应仪等手段表征和分析了薄膜的微观结构和光电性能,研究了退火氧分压对薄膜光电性能的影响。结果表明:退火后的AZO薄膜仍具有c轴择优取向的六方纤锌矿结构,薄膜的表面致密光滑;随着退火氧分压的降低AZO薄膜光学带隙变窄、透光率有所降低,但是其值均高于80%;随着退火氧分压的降低载流子浓度显著升高,电导特性明显改善,电阻率最低达到2.1×10^(-3)Ω·cm。 相似文献
3.
4.
5.
本文采用直流磁控溅射技术在玻璃衬底上制备了AZO/Cu、Cu/AZO和AZO/Cu/AZO三种复合结构多层膜,研究了生长温度对多层膜特性的影响,发现AZO/Cu双层薄膜具有最优的光电性能,其最佳生长温度为100~150℃。文中进一步考察了生长温度对AZO/Cu双层薄膜结构性能和表面形貌的影响,结果表明:合适的生长温度有... 相似文献
6.
本文采用直流磁控溅射技术在玻璃衬底上制备了AZO/Cu、Cu/AZO和AZO/Cu/AZO三种复合结构多层膜,研究了生长温度对多层膜特性的影响,发现AZO/Cu双层薄膜具有最优的光电性能,其最佳生长温度为100~150℃。文中进一步考察了生长温度对AZO/Cu双层薄膜结构性能和表面形貌的影响,结果表明:合适的生长温度有利于改善AZO/Cu双层薄膜的晶体质量,进而提高其光电性能;150℃下沉积的薄膜具有最佳品质因子1.11×10^-2Ω^-1,此时方块电阻为8.99Ω/sq,可见光透过率为80%,近红外反射率约70%。本文在较低温度下制备的AZO/Cu双层膜具有较优的透明导电性和良好的近红外反射性,可以广泛应用于镀膜玻璃、太阳能电池、平板显示器等光电领域。 相似文献
7.
8.
9.
在玻璃衬底上利用磁控溅射法制备AZO/Cu/AZO多层薄膜,研究了溅射功率对AZO薄膜的微观结构和光电性能的影响。采用X射线衍射(XRD)仪、扫描电子显微镜(SEM)、紫外可见光谱仪(UVVis)等方法,对AZO薄膜的形貌结构、光电学性能进行了测试。结果表明:不同溅射功率下沉积的AZO薄膜均呈C轴择优取向,溅射功率对AZO/cu/AZO多层薄膜结构与光电性能有一定的影响。在溅射功率为120W、衬底温度为2500C、溅射气压为0.5Pa时薄膜的光透过率为75%,最低电阻率为2.2×10-4Ω·cm、结晶质量、表面形貌等得到明显改善。 相似文献
10.
真空退火法对AZO薄膜的研究 总被引:1,自引:0,他引:1
磁控溅射法在玻璃衬底上制备了AZO(氧化锌掺铝)薄膜。对薄膜进行了真空退火。利用XRD、分光光度计以及四探针等测试装置,对AZO薄膜的晶粒度、透光率和导电性能进行了测试分析。结果表明,退火有利于薄膜结晶;退火有利于薄膜光电性能的提高。在本实验中,AZO薄膜的最高透光率可达90.617%;最低电阻率可达2.21×10-3(Ω.cm)。对比在真空中退火的ITO薄膜的光电性能参数,结果已有所超越。此结果说明,AZO薄膜有潜力成为透明导电膜ITO的替代产品。 相似文献
11.
K. Ravichandran N. Jabena Begum S. Snega B. Sakthivel 《Materials and Manufacturing Processes》2016,31(11):1411-1423
Owing to the low-cost, nontoxicity and abundance, aluminum-doped zinc oxide (AZO) thin films become a better alternative to indium tin oxide (ITO) films. Therefore, development of AZO films with transparent conducting properties comparable to that of ITO is one of the main focuses of material scientists, and hence various ways and means are attempted for the past two decades. Also, the production of cost-effective transparent conducting oxide (TCO) films is a presently engaged task of R&D departments of optoelectronic industries. In this paper, we present a detailed review on the effects of various process parameters on the characteristics of AZO thin films deposited using one of the low-cost fabrication techniques called spray pyrolysis. More than 100 original research articles related to this topic have been surveyed and analyzed critically. Results obtained from our experimental work are compared with the collected data, and an interesting correlation between the properties of AZO films has been found out and reported. 相似文献
12.
Preparation of aluminum doped zinc oxide films and the study of their microstructure, electrical and optical properties 总被引:1,自引:0,他引:1
Hong-ming Zhou Dan-qing Yi Zhi-ming Yu Lai-rong Xiao Jian Li 《Thin solid films》2007,515(17):6909-6914
Aluminum doped zinc oxide (AZO) polycrystalline thin films were prepared by sol-gel dip-coating process on optical glass substrates. Zinc acetate solutions of 0.5 M in isopropanol stabilized by diethanolamine and doped with a concentrated solution of aluminum nitrate in ethanol were used. The content of aluminum in the sol was varied from 1 to 3 at.%. Crystalline ZnO thin films were obtained following an annealing process at temperatures between 300 °C and 500 °C for 1 h. The coatings have been characterized by X-ray diffraction, UV-Visible spectrophotometry, scanning electron microscopy, and electrical resistance measurement. The ZnO:Al thin films are transparent (∼ 90%) in near ultraviolet and visible regions. With the annealing temperature increasing from 300 °C to 500 °C, the film was oriented more preferentially along the (0 0 2) direction, the grain size of the film increased, the transmittance also became higher and the electrical resistivity decreased. The X-ray diffraction analysis revealed single-phase ZnO hexagonal wurtzite structure. The best conductors were obtained for the AZO films containing 1 at.% of Al, annealed at 500 °C, 780 nm film thickness. 相似文献
13.
AZO透明导电薄膜的特性、制备与应用 总被引:28,自引:2,他引:26
本文综述了AZO透明导电薄膜的结构特点,电学和光学的特性,薄膜研究、应用和开发现状,认为AZO薄膜具有较好的开发前景。 相似文献
14.
采用直流磁控溅射方法在玻璃衬底上室温生长了AZO/Cu双层薄膜,Cu层厚度控制在9nm,研究了AZO层厚度对薄膜电学和光学性能的影响。当AZO层厚度为20~80nm时,AZO/Cu双层薄膜具有良好的综合光电性能,方块电阻为12~14Ω/sq,可见光平均透过率为70~75%,品质因子为2×10-3~5×10-3Ω-1。AZO/Cu双层薄膜可以观察到Cu(111)和ZnO(002)的XRD衍射峰。通过退火研究表明,AZO/Cu双层薄膜的光电性能可在400℃下保持稳定,具有良好的热稳定性。本研究制备的透明导电AZO/Cu双层薄膜具有室温制程、综合光电性能良好、结晶性能较好、稳定性高的优点,可以广泛应用于光电器件透明电极及镀膜玻璃等领域。 相似文献
15.
采用射频磁控溅射方法在玻璃衬底上制备了掺铝ZnO透明导电薄膜(AZO)。为了降低AZO薄膜的电阻率, 采用在溅射气氛中通入一定比例H2的方法对AZO薄膜进行氢化处理, 并研究了溅射气氛中H2含量及衬底温度对AZO薄膜氢化效果的影响。结果表明: 在低温条件下, 氢化处理能有效降低AZO薄膜的电阻率; 在衬底温度为100℃的低温条件下, 通过调节溅射气氛中H2的比例, 制备了电阻率为6.0×10-4 Ω·cm的高质量氢化AZO薄膜, 该电阻值低于同等条件下未氢化AZO薄膜电阻值的1/3; 但随着衬底温度的升高, 氢化处理对薄膜电学性能的改善效果逐渐减弱。 相似文献
16.
17.
室温下,结合正交实验表,用射频磁控溅射在涤纶(PET)非织造布基材上生长AZO(Al2O3:ZnO)纳米结构薄膜.采用四探针测量仪测试AZO薄膜的方块电阻,用原子力显微镜(AFM)分析薄膜微结构;通过正交分析法对实验L9(33)AZO薄膜的性能指标进行分析.实验结果表明:溅射厚度对AZO薄膜导电性能起主导作用,其次为氩气压强和溅射功率;同时,得出制备AZO薄膜的最佳工艺为:溅射功率150W、厚度100m和气压0.2Pa,该参数下样品的方块电阻为1.633×103Ω,AZO纳米颗粒的平均直径约为69.4nm. 相似文献
18.
19.
The influence of substrate temperature on the structural, electrical, and optical properties of aluminum-doped zinc oxide (AZO) films fabricated by radio frequency (RF) magnetron sputtering was investigated. The AZO films were deposited at various substrate temperatures, and the effect of AZO gate electrode conductivity on organic thin film transistor (OTFT) performance was examined. While an increase in the substrate temperature from 100 °C to 300 °C led to an improvement in crystallinity, substrate temperatures over 300 °C caused degradation of the electrical and surface properties. We fabricated OTFTs using AZO films prepared at various substrate temperatures and obtained good device performance. Thus, the performance of an OTFT can be determined by the conductivity of the AZO gate electrode. 相似文献