离子束辅助沉积金红石型氧化钛薄膜的择优取向控制

用惰性气体离子束辅助沉积技术,合成了金红石型氧化钛薄膜。薄膜生长过程中,离子束以４５°角轰击薄膜。通过增加离子原子到达比γ,实现了金石型氧化钛薄膜从择优取向向择优取向的转变。     

离子束辅助沉积技术及其进展

本文介绍了离子束辅助沉积技术的基本原理，主要工作特点，设备及主要影响因素，综 利用该技术在制备各种新膜层方面研究的新进展，并指出该技术的不足及未来发展方向。     

离子束辅助沉积技术制备耐磨抗蚀膜层的研究进展

介绍了离子束辅助沉积技术及其在制备耐磨抗蚀膜层方面的应用，对该技术目前的发展现状及应用前景作了评述。     

离子束辅助沉积技术及其进展

本文介绍了离子束辅助沉积技术的基本原理，主要工作特点，设备及主要影响因素。综述了利用该技术在制备各种新型膜层方面研究的新进展。并指出该技术的不足及未来发展方向。     

离子束辅助薄膜沉积

离子束辅助沉积(IBAD)是在气相沉积的同时辅以离子束轰击的薄膜制备方法，可在低温下合成致密、均匀的薄膜。介绍了IBAD技术的概况，列举了具体应用领域，描述了射频ICP离子源辅助电子束蒸发，最后对IBAD的前景加以评论。     

离子束辅助沉积铂碳混合膜及其抑制栅电子发射性能

采用离子束辅助沉积技术,在硅、钼衬底上分别制备铂碳混合膜.XRD的分析结果表明,当铂碳混合膜中铂的组份较多时,有较强的铂(111)面衍射峰和较弱的铂(200)面衍射峰,铂的组份呈(111)择优取向.Raman谱的分析结果表明,碳基本上呈非晶状态.模拟二极管的实验表明,在纯钼阳极上镀覆铂碳混合膜,其抑制热电子发射的性能明显优于纯钼阳极.     

低能离子束沉积类金刚石膜的结构及性能研究

研究了利用低能离子束技术，在单晶硅片等多种基体表面形成类金刚石薄膜（ＤＬＣ膜）。利用透射电镜、Ｘ射线光电子能谱及拉曼光谱等分析手段对该膜进行了显微结构分析，发现类金刚石膜是含有金刚石及其它碳相的混合碳膜。对该膜性能测试表明，该膜类似金刚石的性能，其光学、电学、机械及化学性质优异。探讨了类金刚石膜生长的机理，对类金刚石膜的一些可能的应用进行了研究。     

离子束辅助沉积设备的研制

本文介绍了离子束辅助沉积设备的结构、工作原理、设备性能以及工艺试验初步。     

钛合金表面离子束辅助沉积CuNiIn固体润滑膜和Cr—N硬质膜

在钛合金表面的利用离子不辅助沉积（ＩＢＡＤ）技术ＣｕＮｉＩｎ固体润滑膜和Ｃｒ－Ｎ硬质膜层，分析、测定了膜层的组织结构、成分分布、形手表主摩擦磨损性能。结果表明，ＩＢＡＤＣｕＮｉＩｎ在室温和５００℃均可为ＴＣ４合金表面产生良好的固体润滑效果，各项性能显著优于传统电镀Ａｇ方法。ＩＢＡＤＣｒ－Ｎ膜为ＣｒＮ和Ｃｒ双相组织，在室温和５００℃可有效地改善ＴＣ４合金表面的耐磨性能。     

The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition

Indium tin oxide (ITO) thin films have been deposited onto polycarbonate substrates by ion beam assisted deposition technique at room temperature. The structural, optical and electrical properties of the films have been characterized by X-ray diffraction, atomic force microscopy, optical transmittance, ellipsometric and Hall effect measurements. The effect of the ion beam energy on the properties of the films has been studied. The optical parameters have been obtained by fitting the ellipsometric spectra. It has been found that high quality ITO film (low electrical resistivity and high optical transmittance) can be obtained at low ion beam energy. In addition, the ITO film prepared at low ion beam energy gives a high reflectance in IR region that is useful for some electromagnetic wave shielding applications.     

An orientation competition in yttria-stabilized zirconia thin films fabricated by ion beam assisted sputtering deposition

A previously found orientation competition in ion beam sputtered yttria-stabilized zirconia thin films was studied in detail. The effects of sputtering energy and deposition angle were analyzed in ion sputtered films without assisting ions bombardment. It is found that for normally deposited films, (001) and (011) orientations are favored at low and high sputtering energy respectively. For inclined substrate deposited films, as deposition angle increases, (001), (011) and (111) orientations are advantaged in turn. The results can be attributed to the in-plane energy exchange of deposition atom and adatoms. In ion beam assisting deposited YSZ films of low assisting ions energy and current, a (001) oriented biaxial texture is gradually induced as ion energy increased. In the case of ion beam assisted inclined deposition of 45°, (001) orientation is enhanced and two preferential in-plane orientations are found coexist.     

Deposition of titanium nitride films onto silicon by an ion beam assisted deposition method

Titanium nitride (TiN) films were deposited onto silicon wafers using an ion beam assisted deposition (IBAD) method with an electron cyclotron resonance (ECR) ion source for ionizing the nitrogen (N₂) gas under a condition of high nitrogen ion to titanium neutral ratio. The deposition rate of the TiN films was strongly dependent on the evaporation rate, d_Ti, of Ti metal and decreased with increasing nitrogen ion current. The deposition rate can be approximated as d=βd_Ti?_N2/{1/k+?_N2}−αI, where β, k and α are proportional constants, ?_N2 is the sum rate of neutral and ionized nitrogen impinging onto the substrate, and I is the nitrogen ion current.     

离子束辅助脉冲激光沉积硼碳氮薄膜

以烧结B4C为靶材料、在氮离子束辅助下用脉冲激光沉积方法制备了三元化合物硼碳氮（BCN）薄膜.用X光电子谱和傅立叶变换红外谱方法表征了制备的薄膜.结果表明,膜层中包含B-C、N-C、B-N键等复合结构,以B-C-N原子杂化的形式结合成键,而并非各种成分的简单混合.还探讨了成膜过程和相关机理,离子束中的活性氮有效地和脉冲激光对B4C靶烧蚀产生的硼和碳结合成键,氮离子束的辅助还能在一定程度上抑制氧杂质进入膜层,给衬底适当加温有利于提高氮的含量并影响薄膜的化学结构.     

脉冲激光沉积法制备Pt薄膜的研究

采用脉冲激光沉积技术在(0001)取向的蓝宝石基片上外延生长了Pt单晶薄膜,研究了沉积温度和激光能量对Pt薄膜的晶体结构,表面形貌及电学性能的影响规律.X射线衍射(XRD)分析结果表明,在沉积温度650℃、激光脉冲频率1Hz和激光能量280mJ的条件下,制备得到的Pt(111)单晶薄膜,其(111)面ω摇摆曲线半高宽(FWHM)仅为0.068°.原子力显微镜(AFM)分析表明外延的Pt薄膜表面具有原子级平整度,其表面均方根粗糙度(RMS)约为1.776nm.四探针电阻测试结果显示薄膜方阻为1/962Ω/□,满足铁电薄膜的制备工艺对Pt底电极的要求.     

Properties of (Ti,Cr)N and (Al,Cr)N thin films prepared by ion beam assisted deposition

(Ti,Cr)N and (Al,Cr)N thin films were prepared by nitrogen ion beam assisted deposition of Cr, Ti or Al (IBAD) atoms on a titanium, chromium or aluminium substrate. In this way, layers featuring a diverse composition were obtained. The actual profile of the implanted and deposit atoms differed from the theoretically assumed process. Some of the implanted nitrogen formed gas bubbles under the sample's surface. The gas bubbles released the nitrogen upwards while the local temperature increased during the implantation or during a later heating process. Craters are formed from the bubbles, which were clearly visible on the AFM photographs. Annealing the modified surfaces in a vacuum always changed the surface topography of the sample. The lowest wear rate and the lowest friction coefficient were observed in the Cr–Ti–N and Cr–Al–N samples.     

Texture evolution of transition-metal nitride thin films by ion beam assisted deposition

TiN, VN and CrN were systematically deposited on silicon substrates using ion beam assisted deposition (IBAD) technique at temperatures and ion (N₂⁺) energy ranging from 300 °C to 500 °C and 100 eV to 650 eV, respectively. The results showed that the texture could be controlled by the ion beam energy, flux, and its incident angle, in conjunction with the deposition temperature. For the 0° angle of ion incidence, fiber textures were formed and could be controlled between (111) and (200) surface plane orientation by adjusting ion flux or ion energy. Three types of in-plane textures were produced, when the ion beam was incident at 45° angle, for which cases ion channeling played an important role in the formation of in-plane texture. Using the strain-energy perturbation method, the stability of texture can be further understood. Among the three in-plane textures, the (200) in-plane texture is strain-energy stable, and the others are not.     

Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method

Pt thin films were deposited on Si substrates by applying a negative substrate bias voltage using a non-mass separated ion beam deposition method. The effect of the substrate bias voltage on the properties of the deposited films was investigated. In the case of Pt thin films deposited without the substrate bias voltage, a columnar structure and small grains were observed. The electrical resistivity of the deposited Pt films was very high (49.3 ± 0.65 µΩ cm). By increasing the substrate bias voltage, no clear columnar structure was observed. At the substrate bias voltage of − 75 V, the resistivity of the Pt film showed a minimum value of 16.9 ± 0.2 µΩ cm closed to the value of bulk (10.6 µΩ cm).     

Effect of microstructure on degradation of AlN films prepared by ion beam assisted deposition

Two kinds of aluminum nitride (AlN) films were prepared by ion beam assisted deposition (IBAD) by changing the nitrogen ion beam energy; one was deposited with a 0.2 keV ion beam, showing a columnar structure, and the other was deposited with a 1.5 keV ion beam, showing a granular structure. The effect of microstructure on degradation of AlN films was studied by immersing them in aqueous HNO₃, HCl, and NaOH solutions at room temperature. Degradation was examined mainly in terms of changes in optical transmittance and surface morphology. After immersion in HNO₃ and HCl solutions, the average transmittance of the columnar film decreased gradually from the beginning of immersion, while that of the granular film maintained the initial level of transmittance for about 60 h immersion in HNO₃ solution and about 80 h immersion in HCl solution. In NaOH solution, both films were detached readily from the substrate and no remarkable difference in the degradation behavior was observed between the two films. It is concluded that the IBAD AlN films with the granular structure show higher durability against aqueous acid solutions than the films with the columnar structure.     

低能离子束方法制备磁性Fe-Si合金薄膜

利用质量分离的低能离子束技术．获得了磁性Fe-Si合金薄膜。利用俄歇电子能谱法(AES)、X射线衍射法(XRD)以及交变梯度样品磁强计(AGM)测试了样品的组分、结构以及磁特性。测试结果表明在室温下制备的Fe-Si合金是Fe组分渐变的非晶薄膜,具有室温铁磁性。当衬底温度为300℃时制备的非晶Fe-Si薄膜中有Fe硅化物FeSi相产生．样品的铁磁性被抑制。