Polaronic Trions at the MoS2/SrTiO3 Interface

The reduced electrical screening in 2D materials provides an ideal platform for realization of exotic quasiparticles, that are robust and whose functionalities can be exploited for future electronic, optoelectronic, and valleytronic applications. Recent examples include an interlayer exciton, where an electron from one layer binds with a hole from another, and a Holstein polaron, formed by an electron dressed by a sea of phonons. Here, a new quasiparticle is reported, “polaronic trion” in a heterostructure of MoS₂/SrTiO₃ (STO). This emerges as the Fröhlich bound state of the trion in the atomically thin monolayer of MoS₂ and the very unique low energy soft phonon mode (≤7 meV, which is temperature and field tunable) in the quantum paraelectric substrate STO, arising below its structural antiferrodistortive (AFD) phase transition temperature. This dressing of the trion with soft phonons manifests in an anomalous temperature dependence of photoluminescence emission leading to a huge enhancement of the trion binding energy (≈70 meV). The soft phonons in STO are sensitive to electric field, which enables field control of the interfacial trion–phonon coupling and resultant polaronic trion binding energy. Polaronic trions could provide a platform to realize quasiparticle‐based tunable optoelectronic applications driven by many body effects.     

Probing Anisotropic Thermal Conductivity of Transition Metal Dichalcogenides MX2 (M = Mo,W and X = S,Se) using Time‐Domain Thermoreflectance

Transition metal dichalcogenides (TMDs) are a group of layered 2D semiconductors that have shown many intriguing electrical and optical properties. However, the thermal transport properties in TMDs are not well understood due to the challenges in characterizing anisotropic thermal conductivity. Here, a variable‐spot‐size time‐domain thermoreflectance approach is developed to simultaneously measure both the in‐plane and the through‐plane thermal conductivity of four kinds of layered TMDs (MoS₂, WS₂, MoSe₂, and WSe₂) over a wide temperature range, 80–300 K. Interestingly, it is found that both the through‐plane thermal conductivity and the Al/TMD interface conductance depend on the modulation frequency of the pump beam for all these four compounds. The frequency‐dependent thermal properties are attributed to the nonequilibrium thermal resistance between the different groups of phonons in the substrate. A two‐channel thermal model is used to analyze the nonequilibrium phonon transport and to derive the intrinsic thermal conductivity at the thermal equilibrium limit. The measurements of the thermal conductivities of bulk TMDs serve as an important benchmark for understanding the thermal conductivity of single‐ and few‐layer TMDs.     

Out‐of‐Plane Strain Induced in a Moiré Superstructure of Monolayer MoS2 and MoSe2 on Au(111)

Making contact of transition metal dichalcogenides (TMDCs) with a metal surface is essential for fabricating and designing electronic devices and catalytic systems. It also generates strain in the TMDCs that plays significant role in both electronic and phonon structures. Therefore, detailed understanding of mechanism of the strain generation is important to fully comprehend the modulation effect for the electronic and phonon properties. Here, MoS₂ and MoSe₂ monolayers are grown on Au surface by chemical vapor deposition and it is demonstrated that the contact with a crystalline Au(111) surface gives rise to only out‐of‐plane strain in both MoS₂ and MoSe₂ layers, whereas no strain generation is observed on polycrystalline Au or SiO₂/Si surfaces. Scanning tunneling microscopy analysis provides information regarding consequent specific adsorption sites between lower S (Se) atoms in the S? Mo? S (Se? Mo? Se) structure and Au atoms via unique moiré superstructure formation for MoS₂ and MoSe₂ layers on Au(111). This observation indicates that the specific adsorption sites give rise to out‐of‐plane strain in the TMDC layers. Furthermore, it also leads to effective modulation of the electronic structure of the MoS₂ or MoSe₂ layer.     

Epitaxial Single‐Layer MoS2 on GaN with Enhanced Valley Helicity

Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12‐time increased valley spitting in single‐layer WSe₂ through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band‐to‐band tunnel field‐effect transistors with a subthreshold swing below 60 mV dec⁻¹ at room temperature based on bilayer n‐MoS₂ and heavily doped p‐germanium, etc. Here, it is demonstrated that epitaxially grown single‐layer MoS₂ on a lattice‐matched GaN substrate, possessing a type‐I band alignment, exhibits strong substrate‐induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS₂/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady‐state and time‐resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley‐optoelectronic device applications.     

Unveiling Active Sites for the Hydrogen Evolution Reaction on Monolayer MoS2

Here, the hydrogen evolution reaction (HER) activities at the edge and basal‐plane sites of monolayer molybdenum disulfide (MoS₂) synthesized by chemical vapor deposition (CVD) are studied using a local probe method enabled by selected‐area lithography. Reaction windows are opened by e‐beam lithography at sites of interest on poly(methyl methacrylate) (PMMA)‐covered monolayer MoS₂ triangles. The HER properties of MoS₂ edge sites are obtained by subtraction of the activity of the basal‐plane sites from results containing both basal‐plane and edge sites. The catalytic performances in terms of turnover frequencies (TOFs) are calculated based on the estimated number of active sites on the selected areas. The TOFs follow a descending order of 3.8 ± 1.6, 1.6 ± 1.2, 0.008 ± 0.002, and 1.9 ± 0.8 × 10^?4 s^?1, found for 1T′‐, 2H‐MoS₂ edges, and 1T′‐, 2H‐MoS₂ basal planes, respectively. Edge sites of both 2H‐ and 1T′‐MoS₂ are proved to have comparable activities to platinum (≈1–10 s^?1). When fitted into the HER volcano plot, the MoS₂ active sites follow a trend distinct from conventional metals, implying a possible difference in the reaction mechanism between transition‐metal dichalcogenides (TMDs) and metal catalysts.     

Au NPs@MoS2 Sub‐Micrometer Sphere‐ZnO Nanorod Hybrid Structures for Efficient Photocatalytic Hydrogen Evolution with Excellent Stability

MoS₂ shows promising applications in photocatalytic water splitting, owing to its uniquely optical and electric properties. However, the insufficient light absorption and lack of performance stability are two crucial issues for efficient application of MoS₂ nanomaterials. Here, Au nanoparticles (NPs)@MoS₂ sub‐micrometer sphere‐ZnO nanorod (Au NPs@MoS₂‐ZnO) hybrid photocatalysts have been successfully synthesized by a facile process combining the hydrothermal method and seed‐growth method. Such photocatalysts exhibit high efficiency and excellent stability for hydrogen production via multiple optical‐electrical effects. The introduction of Au NPs to MoS₂ sub‐micrometer spheres forming a core–shell structure demonstrates strong plasmonic absorption enhancement and facilitates exciton separation. The incorporation of ZnO nanorods to the Au NPs@MoS₂ hybrids further extends the light absorption to a broader wavelength region and enhances the exciton dissociation. In addition, mutual contacts between Au NPs (or ZnO nanorods) and the MoS₂ spheres effectively protect the MoS₂ nanosheets from peeling off from the spheres. More importantly, efficiently multiple exciton separations help to restrain the MoS₂ nanomaterials from photocorrosion. As a result, the Au@MoS₂‐ZnO hybrid structures exhibit an excellent hydrogen gas evolution (3737.4 μmol g^?1) with improved stability (91.9% of activity remaining) after a long‐time test (32 h), which is one of the highest photocatalytic activities to date among the MoS₂ based photocatalysts.     

Piezoelectric coupling effect on exciton–phonon scattering rates in CdSe quantum dots embedded in glass matrix

The scattering of excitons by acoustic phonons in nanostructures such as quantum dots generally controls relaxation process to the lowest energy states, and is a basis for understanding optical properties and coherence effects in these systems. In our work we have studied theoretically the scattering of excitons via acoustic phonons in a CdSe disk-shaped semiconductor quantum dot under an applied magnetic field. The scattering rate (SR) is calculated considering the exciton–phonon scattering by the piezoelectric coupling potential mechanism. We discuss the influence of the external applied magnetic field, and the quantum dot size on the SR. Our calculations show that the exciton–acoustic phonon scattering rate depends significantly on these parameters.     

Hierarchical Coherent Phonons in a Superatomic Semiconductor

The coupling of phonons to electrons and other phonons plays a defining role in material properties, such as charge and energy transport, light emission, and superconductivity. In atomic solids, phonons are delocalized over the 3D lattice, in contrast to molecular solids where localized vibrations dominate. Here, a hierarchical semiconductor that expands the phonon space by combining localized 0D modes with delocalized 2D and 3D modes is described. This material consists of superatomic building blocks (Re₆Se₈) covalently linked into 2D sheets that are stacked into a layered van der Waals lattice. Using transient reflectance spectroscopy, three types of coherent phonons are identified: localized 0D breathing modes of isolated superatom, 2D synchronized twisting of superatoms in layers, and 3D acoustic interlayer deformation. These phonons are coupled to the electronic degrees of freedom to varying extents. The presence of local phonon modes in an extended crystal opens the door to controlling material properties from hierarchical phonon engineering.     

Tunneling Photocurrent Assisted by Interlayer Excitons in Staggered van der Waals Hetero‐Bilayers

Vertically stacked van der Waals (vdW) heterostructures have been suggested as a robust platform for studying interfacial phenomena and related electric/optoelectronic devices. While the interlayer Coulomb interaction mediated by the vdW coupling has been extensively studied for carrier recombination processes in a diode transport, its correlation with the interlayer tunneling transport has not been elucidated. Here, a contrast is reported between tunneling and drift photocurrents tailored by the interlayer coupling strength in MoSe₂/MoS₂ hetero‐bilayers (HBs). The interfacial coupling modulated by thermal annealing is identified by the interlayer phonon coupling in Raman spectra and the emerging interlayer exciton peak in photoluminescence spectra. In strongly coupled HBs, positive photocurrents are observed owing to the inelastic band‐to‐band tunneling assisted by interlayer excitons that prevail over exciton recombinations. By contrast, weakly coupled HBs exhibit a negative photovoltaic diode behavior, manifested as a drift current without interlayer excitonic emissions. This study sheds light on tailoring the tunneling transport for numerous optoelectronic HB devices.     

Lattice dynamics, force constants, and phonon dispersion in model ferroelastics Hg2I2

The dispersion dependences of the frequencies of acoustic and optical phonons have been calculated and plotted, and the density of states of the phonon spectrum of Hg₂I₂ crystals has been obtained. The influence of hydrostatic pressure on the frequency of acoustic and optical phonons and their dispersion has been theoretically analyzed. The slowest acoustic TA branch (soft mode) at the X point of the Brillouin-zone boundary exhibits strong softening with an increase in pressure.     

Engineering 2D Metal–Organic Framework/MoS2 Interface for Enhanced Alkaline Hydrogen Evolution

2D metal–organic frameworks (MOFs) have been widely investigated for electrocatalysis because of their unique characteristics such as large specific surface area, tunable structures, and enhanced conductivity. However, most of the works are focused on oxygen evolution reaction. There are very limited numbers of reports on MOFs for hydrogen evolution reaction (HER), and generally these reported MOFs suffer from unsatisfactory HER activities. In this contribution, novel 2D Co‐BDC/MoS₂ (BDC stands for 1,4‐benzenedicarboxylate, C₈H₄O₄) hybrid nanosheets are synthesized via a facile sonication‐assisted solution strategy. The introduction of Co‐BDC induces a partial phase transfer from semiconducting 2H‐MoS₂ to metallic 1T‐MoS₂. Compared with 2H‐MoS₂, 1T‐MoS₂ can activate the inert basal plane to provide more catalytic active sites, which contributes significantly to improving HER activity. The well‐designed Co‐BDC/MoS₂ interface is vital for alkaline HER, as Co‐BDC makes it possible to speed up the sluggish water dissociation (rate‐limiting step for alkaline HER), and modified MoS₂ is favorable for the subsequent hydrogen generation step. As expected, the resultant 2D Co‐BDC/MoS₂ hybrid nanosheets demonstrate remarkable catalytic activity and good stability toward alkaline HER, outperforming those of bare Co‐BDC, MoS₂, and almost all the previously reported MOF‐based electrocatalysts.     

Interpretation of Temperature-Dependent Resistivity of La–Pb–MnO3: Role of Electron–Phonon Interaction

The present paper deals with the theoretical investigation of temperature-dependent resistivity of the perovskite manganites La_0.78Pb_0.22MnO_3-δ within the framework of the classical electron–phonon model of resistivity, i.e., the Bloch–Gruneisen model. Due to inherent acoustic (low-frequency) phonons (ω_ac) as well as high-frequency optical phonons (ω_op), the contributions to the electron–phonon resistivity have first been estimated. At low temperatures the acoustic phonons of the oxygen-breathing mode yield a relatively larger contribution to the resistivity as compared to the contribution of optical phonons. Furthermore, the nature of phonons changes around T = 215 K exhibiting a crossover from an acoustic to optical phonon regime with elevated temperature. The contribution to resistivity estimated by considering both phonons, i.e., ω_ac and ω_op, when subtracted from experimental data, infers a T^4.5 temperature dependence over most of the temperature range. Deduced T^4.5 temperature dependence of ρ_diff = [ρ_exp − {ρ₀ + ρ_e-ph( = ρ_ac + ρ_op)}] is justified in terms of electron–magnon scattering within the double exchange (DE) process. Within the proposed scheme, the present numerical analysis of temperature dependent resistivity shows similar results as those revealed by experiments     

Anisotropic MoS2 Nanosheets Grown on Self‐Organized Nanopatterned Substrates

Manipulating the anisotropy in 2D nanosheets is a promising way to tune or trigger functional properties at the nanoscale. Here, a novel approach is presented to introduce a one‐directional anisotropy in MoS₂ nanosheets via chemical vapor deposition (CVD) onto rippled patterns prepared on ion‐sputtered SiO₂/Si substrates. The optoelectronic properties of MoS₂ are dramatically affected by the rippled MoS₂ morphology both at the macro‐ and the nanoscale. In particular, strongly anisotropic phonon modes are observed depending on the polarization orientation with respect to the ripple axis. Moreover, the rippled morphology induces localization of strain and charge doping at the nanoscale, thus causing substantial redshifts of the phonon mode frequencies and a topography‐dependent modulation of the MoS₂ workfunction, respectively. This study paves the way to a controllable tuning of the anisotropy via substrate pattern engineering in CVD‐grown 2D nanosheets.     

Effects of Pressure-Induced Phase Transition in Model Hg<Subscript>2</Subscript>Br<Subscript>2</Subscript> Ferroelastics

Raman spectra of model improper ferroelastics (Hg₂Br₂ crystals) have been analyzed in a wide range of hydrostatic pressures. The baric dependences of the phonon frequencies are obtained. The revealing and anomalous behavior of the soft mode, which is genetically related to the acoustic phonon (ТА₁) at the Brillouin zone boundary (point X) of the tetragonal phase, are most interesting. The buildup of the second acoustic phonon (ТА₂) from the same point has also been found in the ferroelastic-phase spectra, and its baric behavior has been investigated. The splitting of doubly degenerate phonons of the E_g symmetry has been revealed at fairly high pressures and explained.     

Enhancement of Exciton Emission from Multilayer MoS2 at High Temperatures: Intervalley Transfer versus Interlayer Decoupling

It is very important to obtain a deeper understand of the carrier dynamics for indirect‐bandgap multilayer MoS₂ and to make further improvements to the luminescence efficiency. Herein, an anomalous luminescence behavior of multilayer MoS₂ is reported, and its exciton emission is significantly enhanced at high temperatures. Temperature‐dependent Raman studies and electronic structure calculations reveal that this experimental observation cannot be fully explained by a common mechanism of thermal‐expansion‐induced interlayer decoupling. Instead, a new model involving the intervalley transfer of thermally activated carriers from Λ/Γ point to K point is proposed to understand the high‐temperature luminescence enhancement of multilayer MoS₂. Steady‐state and transient‐state fluorescence measurements show that both the lifetime and intensity of the exciton emission increase relatively to increasing temperature. These two experimental evidences, as well as a calculation of carrier population, provide strong support for the proposed model.     

Synthesis of In‐Plane Artificial Lattices of Monolayer Multijunctions

Recently, monolayers of van der Waals materials, including transition metal dichalcogenides (TMDs), are considered ideal building blocks for constructing 2D artificial lattices and heterostructures. Heterostructures with multijunctions of more than two monolayer TMDs are intriguing for exploring new physics and materials properties. Obtaining in‐plane heterojunctions of monolayer TMDs with atomically sharp interfaces is very significant for fundamental research and applications. Currently, multistep synthesis for more than two monolayer TMDs remains a challenge because decomposition or compositional alloying is thermodynamically favored at the high growth temperature. Here, a multistep chemical vapor deposition (CVD) synthesis of the in‐plane multijunctions of monolayer TMDs is presented. A low growth temperature synthesis is developed to avoid compositional fluctuations of as‐grown TMDs, defects formations, and interfacial alloying for high heterointerface quality and thermal stability of monolayer TMDs. With optimized parameters, atomically sharp interfaces are successfully achieved in the synthesis of in‐plane artificial lattices of the WS₂/WSe₂/MoS₂ at reduced growth temperatures. Growth behaviors as well as the heterointerface quality are carefully studied in varying growth parameters. Highly oriented strain patterns are found in the second harmonic generation imaging of the TMD multijunctions, suggesting that the in‐plane heteroepitaxial growth may induce distortion for unique material symmetry.     

Determining the Optimized Interlayer Separation Distance in Vertical Stacked 2D WS2:hBN:MoS2 Heterostructures for Exciton Energy Transfer

The 2D semiconductor monolayer transition metal dichalcogenides, WS₂ and MoS₂, are grown by chemical vapor deposition (CVD) and assembled by sequential transfer into vertical layered heterostructures (VLHs). Insulating hBN, also produced by CVD, is utilized to control the separation between WS₂ and MoS₂ by adjusting the layer number, leading to fine‐scale tuning of the interlayer interactions within the VLHs. The interlayer interactions are studied by photoluminescence (PL) spectroscopy and are demonstrated to be highly sensitive to the input excitation power. For thin hBN separators (one to two layers), the total PL emission switches from quenching to enhancement by increasing the laser power. Femtosecond broadband transient absorption measurements demonstrate that the increase in PL quantum yield results from Förster energy transfer from MoS₂ to WS₂. The PL signal is further enhanced at cryogenic temperatures due to the suppressed nonradiative decay channels. It is shown that (4 ± 1) layers of hBN are optimum for obtaining PL enhancement in the VLHs. Increasing thickness beyond this causes the enhancement factor to diminish, with the WS₂ and MoS₂ then behaving as isolated noninteracting monolayers. These results indicate how controlling the exciton generation rate influences energy transfer and plays an important role in the properties of VLHs.     

Direct Growth of High Mobility and Low‐Noise Lateral MoS2–Graphene Heterostructure Electronics

Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all‐2D electronic circuitry. This study employs seed‐free consecutive chemical vapor deposition processes to synthesize high‐quality lateral MoS₂–graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS₂–graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS₂–metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS₂–graphene in‐plane heterostructures are promising materials for the scale‐up of all‐2D circuitry with superlative electrical performance.     

Interpretation of Resistivity of Nd1.85Ce0.15CuO4: Electron–Phonon Mechanism

The temperature-dependent normal state resistivity of single crystal Nd_1.85Ce_0.15CuO_{4 ? δ} is theoretically analyzed within the framework of classical electron–phonon i.e., Bloch-Gruneisen model of resistivity. For the reason of inherent acoustic (low frequency) phonons (ω_ac) as well as high-frequency optical phonons (ω_op), the contributions to the resistivity were first derived. The optical phonons of the oxygen breathing mode yields a relatively larger contribution to the resistivity compared to the contribution of acoustic phonons. Estimated contribution to in-plane resistivity by considering both phonons, i.e., ω_ac and ω_op, along with the zero-temperature-limited resistivity, when subtracted from single crystal data infers a quadratic temperature dependence over most of the temperature range [25 ≤ T ≤ 300]. Quadratic temperature dependence of ρ_diff. = [ρ_exp. ? {ρ₀ + ρ_e–ph (=ρ_ac + ρ_op)}] is understood in terms of 3D electron–electron inelastic scattering. The comparison of single crystal experimental data appears favorable with the present analysis.     

Tailoring MoS2 Valley‐Polarized Photoluminescence with Super Chiral Near‐Field

Transition metal dichalcogenides with intrinsic spin–valley degrees of freedom hold great potentials for applications in spintronic and valleytronic devices. MoS₂ monolayer possesses two inequivalent valleys in the Brillouin zone, with each valley coupling selectively with circularly polarized photons. The degree of valley polarization (DVP) is a parameter to characterize the purity of valley‐polarized photoluminescence (PL) of MoS₂ monolayer. Usually, the detected values of DVP in MoS₂ monolayer show achiral property under optical excitation of opposite helicities due to reciprocal phonon‐assisted intervalley scattering process. Here, it is reported that valley‐polarized PL of MoS₂ can be tailored through near‐field interaction with plasmonic chiral metasurface. The resonant field of the chiral metasurface couples with valley‐polarized excitons, and tailors the measured PL spectra in the far‐field, resulting in observation of chiral DVP of MoS₂‐metasurface under opposite helicities excitations. Valley‐contrast PL in the chiral heterostructure is also observed when illuminated by linearly polarized light. The manipulation of valley‐polarized PL in 2D materials using chiral metasurface represents a viable route toward valley‐polaritonic devices.