掺杂稀土元素镧的钡铁氧体超微粉末的微波吸收特性研究

采用溶胶-凝胶法制备了掺杂稀土元素镧的钡铁氧体超微粉末,就镧元素的掺杂含量对钡铁氧体吸波性能的影响进行了对比研究.实验表明,用聚乙二醇凝胶法制备的BaLaxFe12-xO19超微粉末,当x为0.03时,对微波吸收效果最佳.在涂层厚度1.0mm,测试频段为7.5～11.9GHz内,吸收量均在25dB以上,在11.6GHz处,吸收峰值达41.4dB.     

尖晶石型纳米铁氧体的制备与吸波性能

采用柠檬酸盐溶胶凝胶法制得尖晶石型纳米钴镍锰锌铜铁氧体,通过原子吸收光谱仪测定元素组成,XRD、透射电镜、网络分析仪研究矿物组成并研究其颗粒形貌与吸波性能。试验表明:所得产物为尖晶石立方晶系铁氧体;其中铁元素易于被钴取代,形成CoFe2O4;而Mn、Zn、Cu、Ni趋向于互相掺杂形成固溶铁氧体。铁氧体的平均粒径为50nm。采用网络分析仪研究了5~7GHz,9~11GHz,15~18GHz内铁氧体的吸波性能:尖晶石型立方晶系纳米铁氧体具有良好的微波吸收性能;适量提高锰、锌等掺杂元素含量,有助于提高材料的吸波性能。     

稀土元素对W型钡铁氧体微波吸收特性的作用

采用化学共沉淀法制备W型钡铁氧体,研究稀土元素Dy、Nd、Pr掺杂对铁氧体微波特性的作用.发现:稀土元素的掺入能有效调整铁氧体的微波电磁参数,使自然共振频率向高频移动,并明显提高试样的高频弛豫特征,同时减小复介电常数,以利于阻抗匹配.在一定范围内增大Dy的掺杂量x,有利于进一步获得低介电损耗和高磁损耗,用数值计算模拟方法得到x=0.05时匹配厚度下铁氧体在2～18GHz范围的反射率曲线:吸收峰值达-52.34dB,吸收率小于-10dB的带宽7.9GHz,结果表明稀土Dy掺杂有利于制备轻、薄铁氧体吸波材料.     

纳米镍铜铁氧体粒子的制备与微波吸收特性研究

采用溶胶 凝胶法制备了纳米镍铜铁氧体粒状材料,并对其吸波性能进行研究。实验结果表明,镍铜铁氧体有很好的微波吸收特性,在微波波段有两个吸收峰,较大的吸收峰在 9. 834GHz 处,其值为13.3dB,半峰宽度为3.612GHz。然后,把不同微量稀土铈掺杂到镍铜铁氧体当中,发现适量的稀土铈能提高镍铜铁氧体的吸波性能。较大的吸收峰向高频移动到10.049GHz,其吸收值提高到 21.906dB,半峰宽度展宽为 4.322GHz。镍铜铁氧体是一种有应用价值的新型微波吸收材料。     

La掺杂纳米晶Ni-Zn铁氧体的制备及电磁性能

采用高分子凝胶法制备了Ni0.5Zn0.5LaxFe2-xO4（x=0,0.02,0.05和0.08）纳米晶铁氧体.采用X射线衍射仪（XRD）、透射电镜（TEM）和HP8510网络分析仪分别对其结构、形貌和电磁性能进行了研究.结果表明,当x=0,0.02和0.05时,所得粉体为纯立方晶系尖晶石结构.Ni0.5Zn0.5Fe2O4粉体平均粒径为70nm.随着La离子掺杂量的增加,红外光谱中550cm-1处吸收峰向高波数移动,420cm-1处吸收峰向低波数移动.La离子的掺杂对Ni-Zn铁氧体的电磁性能有一定的影响.在X波段,与Ni0.5Zn0.5Fe2O4铁氧体相比,掺杂La的Ni-Zn铁氧体的tanδm值降低,tanδε值升高.Ni0.5Zn0.5La0.02Fe1.98O4铁氧体的tanδε平均值为0.616.     

两步法中煅烧温度对Ni0.5Zn0.5Fe2O4电磁性能的影响

采用两步法(共沉淀法联合溶胶-凝胶法)制备Ni_(0.5)Zn_(0.5)Fe_2O_4纳米吸波材料,探究了溶胶-凝胶法中前驱体的煅烧温度对样品微波吸收性能的影响。利用X射线衍射(XRD)、原子力显微镜(AFM)以及矢量网络分析(VNA)等方法对样品的微观结构和电磁性能进行表征。XRD分析结果表明:当煅烧温度大于650℃时,能够得到纯Ni_(0.5)Zn_(0.5)Fe_2O_4纳米粉体;AFM结果表明:随着煅烧温度的提高,样品颗粒粒径趋于细小化和均匀化;VNA结果表明:在2～12.4GHz范围内,煅烧温度为650℃时,制备的Ni_(0.5)Zn_(0.5)Fe_2O_4表现出最佳的电磁特性,具有优异的微波吸收性能。样品的有效吸波频宽为4.9GHz,最大吸波强度达到-24.94dB。     

超声场下导电聚苯胺/纳米铁氧体吸波涂层的制备及其吸波性能

导电聚苯胺/纳米铁氧体复合吸波材料具有吸波能力强,质量轻等特点.采用乳液聚合法以苯胺为单体、十二烷基苯磺酸为掺杂剂、过硫酸铵为氧化剂,在超声场下制备导电聚苯胺粉体;将其与纳米Ni0.5Zn0.5Fe2O45及纳米Co0.5Zn0.5Fe2O4一起用原位合成法制备了复合吸波涂层.结果表明:制备的吸波涂层在17.9,15.9,22.3 GHz时分别具有最大反射损耗-10.0,-15.9,-39.9 dB,2种复合涂层拓展了波段,提高了对电磁渡的吸收效果.     

Z型铁氧体Ba_3（MnZn）_xCo_（2（1-x））Fe_（24）O_（41）的微波吸收性能

用溶胶-凝胶法制备锰锌掺杂Z型钡钴铁氧体Ba3（MnZn）xCo2（1-x）Fe24O41（x=0.0、0.1、0.2、0.3、0.4、0.5）样品。用XRD和SEM对样品的晶体结构、颗粒形貌进行表征,用微波矢量网络分析仪测试该样品在2～18GHz微波频率范围的复介电常数、复磁导率,根据测量数据计算电磁损耗角正切及反射率,探讨该材料的微波吸收性能与电磁损耗机理。结果表明样品为Z型六角铁氧体晶体结构,颗粒呈六角片状形貌;当样品厚度为2.2mm、x=0.4时,在频率3.9GHz处吸收峰值为38.5dB,10dB以上频带宽度为3.8GHz;该材料能在1～5.8GHz微波低频范围实现有效吸收,其微波吸收兼具磁损耗和介电损耗,但磁损耗更为显著。     

镍锌钴铁氧体/碳纳米管复合吸波材料的制备及表征

采用沸腾回流法制备了Ni0.4Zn0.35Co0.25LaxFe2-xO4/碳纳米管(CNTs)复合吸波材料,考察了镧(La)的掺杂量对复合材料磁性及吸波性能的影响。研究表明:沸腾回流法制备的铁氧体为单相尖晶石结构,纳米铁氧体粒子成功包覆在碳纳米管上。La3+掺杂量x=0.07时,产物的矫顽力(Hc)最大,且吸波性能最佳。     

Ce取代对纳米晶Ni0．5Zn0．5Fe2O4电磁性能的影响

以丙烯酰胺为聚合单体,N,N-亚甲基双丙烯酰胺为网络剂,采用聚丙烯酰胺凝胶法制备了尖晶石型Ni0.5Zn0.5CexFe2-xO4(x=0, 0.05)纳米晶.采用X射线,FT-IR,TEM和波导等方法对产物进行了表征.X射线结果表明,当煅烧温度为600℃时,形成纯相的尖晶石型Ni0.5Zn0.5CexFe2-xO4(x=0,0.05);由透射电镜照片可知Ni0.5Zn0.5Fe2O4平均粒径约为30nm;纳米晶体在8.2～12.4GHz的测试频率范围内具有介电损耗(ε")和磁损耗(μ"),Ni0.5Zn0.5Ceo.05Fe1.95O4的ε" 和μ"均高于Ni0.5Zn0.5Fe2O4,Ni0.5Zn0.5Ce0.05Fe1.95O4的ε"和μ"的最大值分别为0.93和0.15.     

BNT-BT和BNT-BKT基无铅压电陶瓷研究进展

综述了Bi0.5Na0.5TiO3-BaTiO3系和Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3系无铅压电陶瓷的最新研究进展.总结了各种添加剂对这两种无铅压电陶瓷体系压电性能的影响机理和规律,介绍了当前以各种工艺对其微观结构和压电性能进行改进的研究成果,并展望了这两种无铅压电陶瓷体系的发展趋势.     

脉冲激光沉积Ba0.5Sr0.5TiO3、Pb0.5Ba0.5TiO3和Pb0.5Sr0.5TiO3薄膜及其介电性质

采用脉冲激光沉积法,在Pt／Ti／SiO2／Si基底上分剐制备厚度为350nm的Ba0.5Sr0.5TiO3(BST)、Pb0.5Ba0.5TiO3(PBT)和Pb0.5Sr0.5TiO3(PST)薄膜并研究了它们的介电性质。XRD显示,在相同的制备条件下三者具有不同的择优取向,PST具有(110)择优取向,PBT具有(111)择优取向,而BST则是混合取向。SEM显示三者样品表面均匀致密,颗粒尺寸大约在50nm至150nm之间。PST与BST、PBT相比有更高的介电常数,在频率为10kHz时,分别为874、334和355,而损耗都较低,分别为0．0378、0．0316和0．0423,同时PST漏电流也是最小的。测量薄膜的C-V特性扣铁电性能表明室温下BST呈现的是顺电相,PST和PBT则呈铁电相。本文也测量了薄膜在不同频率下的介电温度特性,BST、PBT和PST均表现出频率弥散现象,即随着频率的降低．居里温度降低而介电常数会升高。并测得BST和PST的居里温度分剐为-75和150℃。而PBT的居里温度在250℃以上。本文研究表明：与BST相比较,PBT的介电常数与之相近,漏电流较大;而PST具有高介电常数,较小的漏电流和较大的电容-电压调谐度,在相关半导体器件中的应用将有很大的潜力。     

Heat capacity, thermopower and magnetoresistance effects in multiferroic La0.5Bi0.5Mn0.5Fe0.5O3

We have carried out systematic investigations in perovskite multiferroic La_0.5Bi_0.5Mn_0.5Fe_0.5O₃ by means of X-ray diffraction, magnetisation, electrical resistivity, thermoelectric and heat capacity measurements. The magnetic behaviour of this composition is rather complex, though the magnetisation curve seems to be like a weak ferromagnetic material. However, there is no clear evidence of λ-anomaly in the heat capacity data down to 2 K, yet this behaviour corroborate the trends of semiconducting silicon below room temperature. The sensitivity of magnetic behaviour to the iron-manganese ratio is also demonstrated. In presence of an external field of 7 T, it exhibits a magnetoresistance of ?5 % at 130 K. The thermoelectric value increases linearly with decreasing temperature, and at room temperature the value is +85 μV/K, which is associated with the p-type polaronic conductivity.     

Na0.5 Bi0.5 TiO3-K0.5 Bi0.5 TiO3系铁电体的相变研究

研究了(Na1-xKx)0.5Bi0.5TiO3体系x分别为0、0.08、0.16和0.20时陶瓷不同频率下的介电温谱,发现材料为弛豫型铁电体,材料的介电谱在室温到500℃的温度范围内存在一个介电常数-温度"台阶",一个介电常数-温度峰和一个介电损耗-温度峰,通过分析陶瓷不同温度下的电滞回线验证陶瓷在升温过程中产生了铁电-反铁电-顺电相变,采用铁电体成分起伏理论和内电场理论解释了这类弛豫型铁电体相变的原因.     

Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3无铅压电陶瓷的制备与性能

采用传统的干压成型法制备了Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3无铅压电陶瓷,研究了不同K0.5Bi0.5TiO3含量对Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3陶瓷的微观结构与电性能的影响规律.结果表明,Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3无铅压电陶瓷随K0.5Bi0.5TiO3含量增加,晶格常数增大,密度减小,晶粒尺寸减小,压电常数先增大后减小,介电常数增大,介电损耗增加,机械品质因数下降,而居里温度不断升高,在200℃附近存在由铁电相向反铁电相转变的一个相变点,组分为0.84 Na0.5Bi0.5TiO3-0.16 K0.5Bi0.5TiO3的陶瓷位于准同型相界附近,具有最佳的压电性能.     

Piezoelectric and dielectric properties of Bi0.5Na0.5TiO3–Bi0.5Li0.5TiO3 lead-free ceramics

(1 − x)Bi_0.5Na_0.5TiO₃–xBi_0.5Li_0.5TiO₃ lead-free ceramics have been prepared by a conventional solid-state reaction method, and their piezoelectric and dielectric properties have been studied. X-ray diffraction studies reveal that Li⁺ diffuses into the Bi_0.5Na_0.5TiO₃ lattices to form a solid solution with a pure perovskite structure. The addition of Bi_0.5Li_0.5TiO₃ effectively lowers the sintering temperature of the ceramics and greatly assists in the densification of the ceramics. The ceramic with x = 0.075 possesses the optimum piezoelectric properties: piezoelectric coefficient d ₃₃ = 121 pC/N and planar electromechanical coupling factor k _P = 18.3%. After the partial substitution of Li⁺ for Na⁺ in the A-sites of Bi_0.5Na_0.5TiO₃, the ceramics exhibit more relaxor characteristic, which is probably resulted from the cation disordering in the 12-fold coordination sites. The depolarization temperature T _d shifts to low temperature with the substitution level x of Li⁺ for Na⁺ increasing.     

Structure and electrical properties of Bi0.5Na0.5TiO3-Y0.5Na0.5TiO3-BaTiO3 lead-free piezoelectric ceramics

New (1 – x ? y)Bi_0.5Na_0.5TiO₃-xY_0.5Na_0.5TiO₃-yBaTiO₃ lead-free ceramics have been prepared by a conventional ceramic fabrication technique, and their structure and electrical properties have been studied. A morphotropic phase boundary (MPB) of rhombohedral and tetragonal phases is formed at 0.04 < y < 0.10. As compared to pure Bi_0.5Na_0.5TiO₃ ceramic, the partial substitutions of Y³⁺ for Bi³⁺ and Ba²⁺ for (Bi_0.5Na_0.5)²⁺ in the A-sites of Bi_0.5Na_0.5TiO₃ lower effectively the coercive field E _c and increase the remanent polarization P _r of the ceramics. Because of low E _c, large P _r and the MPB, the ceramics with x = 0–0.02 and y = 0.06 exhibit the optimum piezoelectric properties: d ₃₃ = 155–159 pC/N and k _p = 28.8–36.7%. The temperature dependences of dielectric properties of the ceramics show relaxor-like behaviors. The ferroelectric properties at different temperature suggest that the ceramics may contain both the polar and non-polar regions near/above T _d.     

Positive delayed photoconductivity in double heterostructures Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As of the p-type

Positive delayed photoconductivity was observed for the first time in double p-type heterostructures Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5 As upon exposure to the radiation of a red light-emitting diode. In this state, the concentration and mobility of two-dimensional holes are increased 1.5 and 1.7 times, respectively, as compared to the initial dark values. The delayed photoconductivity can be explained by the presence of deep electron traps located above the Fermi level at the inverted heterointerface.     

Ellipsometric characterisation of ordered Ga0.5 In0.5 P

Abstract

The characterisation of ordered GaInP by room temperature ellipsometry is reported. Anisotropy effects were observed around the energy range of the E₁ interband transition and their evolution with the degree of order in the alloy has been studied. The spectra were analysed using a two phase model and the results obtained with a simple approximate treatment are compared with those of an exact anisotropic treatment.