硅太阳能电池的应用研究与进展

介绍了三代太阳能电池的发展历程和最新研究进展,晶体硅太阳能电池在光伏产业中主要朝高效方向发展,认为廉价、高效多晶硅薄膜太阳能电池,是当前太阳能电池研究的热点,也是未来太阳能电池发展的方向。     

晶体硅、薄膜和纳米结构太阳电池研究

晶体硅电池和薄膜电池是以太阳能作为蓄能手段的电池,在生产生活中被广泛应用。本文对晶体硅电池与薄膜电池存在的问题与特性做了详细的说明,并简要介绍了处于研发阶段的纳米结构太阳电池。     

晶硅良好表面钝化技术及其在n型电池中的应用

优秀的表面钝化已成为高效电池制作的一项关键重要技术,本文对目前晶体硅钝化及其在太阳电池中的应用做了总结与介绍。首先阐述了目前常用的几种钝化薄膜钝化机理与制备方法,分析了各自优缺点及适用场合,并重点讨论了不同钝化膜组成的叠层钝化。随着最近n型高效电池研究的快速发展,介绍了当今几种常见的n型电池结构,对比了不同材料钝化对电池性能影响。最后对未来发展作了总结与展望。虽然目前晶体硅太阳能市场仍以p型硅为主,可以预见,n型电池将是未来高效低成本电池发展的方向。     

我国太阳能发电成本瓶颈将被打破

晶体硅的原料价格不断上升,太阳能电池企业开始另辟第二突破口,转而生产以非晶体硅为原料的薄膜电池。总部设在上海的南通强生光电科技有限公司一条25MW薄膜电池生产线也已进入安装调试阶段,大规模薄膜电池产能已在长三角集聚。     

陷光结构应用于太阳能电池的研究进展

在太阳能电池中引入陷光结构是提高光电转换效率的一种重要方法。本文主要从晶体硅太阳能电池、薄膜太阳能电池和其他新型太阳能电池三方面,综述了近年来国内外陷光结构用于太阳能电池的最新研究进展,分析了陷光结构对各类太阳能电池性能的影响、陷光作用的原理及工艺手段,最后指出其发展潜力及未来的研究方向。     

新型太阳能电池关键材料研究及其进展

在太阳能的有效利用中,光伏发电是近些年来发展最快、最具活力的研究领域。新型太阳能电池在成本方面比晶体硅太阳能电池具有很大的成本优势,因此新型太阳能电池成为新的主要研发方向。本文主要介绍硅基薄膜电池、碲化镉太阳电池、聚合物太阳电池、量子点太阳电池等新型太阳电池的特点及其关键材料研究进展。     

非晶硅锗薄膜电池研究进展及发展方向

本文主要介绍硅基薄膜电池中非晶硅锗电池的研究,总结国内外不同机构和单位研究方向及研究结论。结合对硅锗电池的诸多研究介绍单结非晶硅锗电池以及叠层电池的研究现状。根据最新的研究问题分析预测硅锗薄膜电池的发展方向。     

薄膜太阳能电池的技术特点及前景展望

本文着重阐述了非晶硅薄膜电池、多晶硅薄膜电池、铜铟硒系薄膜太阳能电池以及染料敏化二氧化钛薄膜太阳能电池生产技术方法以及研究方向，特别介绍了一些薄膜太阳能电池的实验室样品和组件的最高光电转化效率。并从材料、工艺与转换效率等方面讨论了它们的优势和不足之处。同时介绍了国内外薄膜太阳电池研究的进展，展望了薄膜太阳能电池的发展前景。     

美研发成果克服染料敏化太阳能电池的致命弱点

目前市场占有率最高的薄膜太阳能电池和晶体硅太阳能电池分别有产生毒物和制造成本高的弱点。1991年瑞士工程师发明的染料敏化电池很好地克服了它们的这些弱点,但填充在电池两极间的电解质溶液会腐蚀电极并有可能泄漏。     

PEDOT∶PSS薄膜在有机光电子领域的研究进展

PEDOT∶PSS薄膜的导电率高、透光性好、且稳定易加工,在有机光电子领域,特别是在有机太阳能电池和有机发光二极管领域得到了广泛的应用研究。从PEDOT∶PSS薄膜的应用和改性两个方面综述了近10年PEDOT∶PSS薄膜在有机太阳能电池和有机发光二极管领域的研究成果,初步展望了其以后的发展方向。     

低温制备二氧化钛纳米薄膜研究进展

低温下制备二氧化钛薄膜具有重要的意义.开发纳米晶TiO2薄膜低温制备技术,可以提高太阳能电池光电转化效率及气体传感器的气敏性能,并且对拓展光催化技术的应用领域、降低生产成本尤为重要.本文就低温制备二氧化钛薄膜的进展情况进行了详细的介绍.     

制备硅薄膜太阳能电池的先进技术与实验研究

介绍了Si薄膜太阳能电池的材料与结构,重点介绍了几种叠层薄膜太阳能电池,详细阐述了近年发展的用于制备低成本、高效率Si薄膜太阳能电池的技术与最新的实验研究成果,其中高温沉积法、低温沉积法、层转移法尤为重要,展望了Si薄膜太阳能电池未来的技术发展和科研方向.三叠层薄膜太阳能电池是有发展前景的产品之一,更多叠层的薄膜太阳能电池与量子点叠层薄膜太阳能电池将长期作为实验研究的热门课题.     

N-type crystalline silicon films free of amorphous silicon deposited on glass by HCl addition using hot wire chemical vapour deposition

Since n-type crystalline silicon films have the electric property much better than those of hydrogenated amorphous and microcrystalline silicon films, they can enhance the performance of advanced electronic devices such as solar cells and thin film transistors (TFTs). Since the formation of amorphous silicon is unavoidable in the low temperature deposition of microcrystalline silicon on a glass substrate at temperatures less than 550 degrees C in the plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition (HWCVD), crystalline silicon films have not been deposited directly on a glass substrate but fabricated by the post treatment of amorphous silicon films. In this work, by adding the HCl gas, amorphous silicon-free n-type crystalline silicon films could be deposited directly on a glass substrate by HWCVD. The resistivity of the n-type crystalline silicon film for the flow rate ratio of [HCl]/[SiH4] = 7.5 and [PH3]/[SiH4] = 0.042 was 5.31 x 10(-4) ohms cm, which is comparable to the resistivity 1.23 x 10(-3) ohms cm of films prepared by thermal annealing of amorphous silicon films. The absence of amorphous silicon in the film could be confirmed by high resolution transmission electron microscopy.     

铝诱导晶化真空蒸镀多晶硅薄膜的研究

采用真空蒸镀的方法在玻璃衬底上沉积1层非晶硅薄膜,再通过铝诱导晶化的方法制备出晶粒分布较均匀、晶粒尺寸0.5～5μm、晶化率达到89%的多晶硅薄膜。研究了衬底距离、衬底温度、退火温度对薄膜表面形貌、晶粒尺寸和分布及晶化率的影响。结果表明适中的衬底距离下得到的薄膜晶粒分布均匀,表面平整度好,薄膜厚度较大。薄膜的晶化率随着衬底温度和退火温度的提高而增大;随着退火温度的进一步提高,薄膜的晶化率达到最大值然后降低。     

Advanced APCVD-processes for high-temperature grown crystalline silicon thin film solar cells

Crystalline silicon thin film (cSiTF) solar cells based on the epitaxial wafer-equivalent (EpiWE) concept combine advantages of wafer-based and thin film silicon solar cells. In this paper two processes beyond the standard process sequence for cSiTF cell fabrication are described. The first provides an alternative to wet chemical saw damage removal by chemical vapor etching (CVE) with hydrogen chloride in-situ prior to epitaxial deposition. This application decreases the number of process and handling steps. Solar cells fabricated with different etching processes achieved efficiencies up to 14.7%. 1300 degrees C etching temperature led to better cell results than 1200 degrees C. The second investigated process aims for an improvement of cell efficiency by implementation of a reflecting interlayer between substrate and active solar cell. Some characteristics of epitaxial lateral overgrowth (ELO) of a patterned silicon dioxide film in a lab-type reactor constructed at Fraunhofer ISE are described and first solar cell results are presented.     

Photovoltaic response of carbon nanotube-silicon heterojunctions: effect of nanotube film thickness and number of walls

We report on the multiwall carbon nanotube application as energy conversion material to fabricate thin film solar cells, with nanotubes acting as photogeneration sites as well as charge separators, collectors and carrier transporters. The device consists of a semitransparent thin film of nanotubes coating a n-type crystalline silicon substrate. Under illumination electron-hole (e-h) pairs, generated in the nanotubes and in the silicon substrate underneath, are split and charges are transported through the nanotubes (electrons) and the n-Si (holes). We found that a suitable thickness of the nanotube thin film, high density of Schottky junctions between nanotubes and n-Si and lowest number of nanotube walls are all fundamental parameters to improve the device incident photon to electron conversion efficiency. Multiwall carbon nanotubes have been synthesized by chemical vapour deposition in an ultra high vacuum chamber by evaporating a given amount of iron at room temperature and then exposing the substrate kept at 800 degrees C at acetylene gas. The amount of deposited iron is found to directly affect the nanotube size distribution (inner and outer diameter) and therefore the number of walls of the nanotubes.     

纳米晶硅薄膜材料的技术发展

本文综述了硅基薄膜材料的发展历程;提出了一些促进硅基薄膜电池技术进步的思路;并对硅 基薄膜电池的发展进行了有益的探讨,对最新的硅基薄膜太阳能电池作了展望.     

硅薄膜中的结构缺陷研究进展

硅薄膜作为制备硅薄膜太阳电池的重要材料,得到了广泛研究和应用,而硅薄膜中的各种缺陷及缺陷密度则对薄膜电池的转换效率和稳定性有着至关重要的影响。对硅薄膜中的缺陷种类、缺陷研究方法以及缺陷对薄膜性能的影响进行总结,期望对提高和改善硅薄膜质量乃至硅薄膜太阳电池转换效率和稳定性提供一定的指导。     

Combined power of perovskites and silicon solar cells

The photovoltaic (PV) or solar cells technology can be categorised into two main groups, the wafer‐based and thin‐film based PVs. The wafer‐based PVs include the commonly known crystalline silicon (c‐Si) and gallium arsenide (GaAs) cells. The GaAs cells exhibit higher efficiency compared to crystalline silicon (c‐Si) cells but it is the later that dominates the commercial market. Thin‐film based (2nd Generation) PVs, including cadmium telluride (CdTe), amorphous silicon (a‐Si:H) and copper‐indium‐gallium‐selenide (CIGS), generally absorb light more efficiently than wafer‐based cells and can allow the use of materials in very thin films form. CdTe PVs have proven to be highly efficient but holds only a few percentage share of the market. There is still a need for more R&D before further commercialisation. An emerging and relatively new class of thin‐film based photovoltaics (3rd Generation) technology that has the potential to overcome the current energy conversion efficiencies and performance by making use of novel materials. This class of PVs include organic photovoltaic (OPV), dye‐synthesised solar cells (DSSC), quantum‐dot (QD) and last but not least, the perovskite PV. Perovskite PVs can offer a low cost energy generation solution with the best device conversion efficiencies have shot from lower than 4% in 2009 to more than 21% in 2016. Perovskite based devices can be fabricated using vacuum thermal evaporation or by solution processing of the active layers. Although most recent perovskite solar cells with record efficiencies (>20%) are prepared via solution processing, the early breakthrough in perovskite solar cells was made with vacuum processed perovskites thin films. Vacuum thermal evaporation offers the ability and flexibility to prepare solar cell devices in various configuration. Recent developments in the field of perovskite demonstrates its compatibility with both, first and second generation PV technologies, and is therefore likely to be embraced by the conventional PV industry and make its way into utility‐scale power generation.