碳化硅和氧化铝陶瓷的热等静压氮化

通过对无压烧结、热压烧结和热等静压烧结ＳＩＣ陶瓷以及热压烧结的ＳｉＣ粒子补强Ａｌ２Ｏ３基复相陶瓷（ＳｉＣｐ－Ａｌ２Ｏ３）和ＳｉＣ粒子与ＳｉＣ晶须共同增强的Ａｌ２Ｏ３基复合材料（ＳｉＣｐ－ＳｉＣｗ－Ａｌ２Ｏ３）在氮气氛中进行高温氮化处理，成功地实现了这些材料的开口气孔表面裂纹的愈合。研究表明：热等静压氯化工艺可以显著提高ＳｉＣ和Ａｌ２Ｏ３陶瓷的抗弯强度，对断裂韧性也有较大的改善作用。对于热等静压烧结ＳｉＣ陶瓷，在１８５０℃和２００ＭＰａ氮气压力下氯化处理１小时后，其抗弯强度和断裂韧性分别由５８２ＭＰａ和５．７ＭＰａ·ｍ１／２提高到９０７ＭＰａ和８．４ＭＰａ·ｍ１／２；对于热压烧结的ＳｉＣｐ－Ａｌ２Ｏ３复相陶瓷和ＳｉＣｐ－ＳｉＣｗ－Ａｌ２Ｏ３复合材料，在１７００℃和１５０ＭＰａ氮气压力下氮化处理１小时后，其室温抗弯强度分别由４６０和７０５ＭＰａ提高到８９５和１０３３ＭＰａ。     

放电等离子超快速烧结SiC-Al2O3纳米复相陶瓷

本文介绍用非均相沉淀法制备的纳米ＳｉＣ－Ａｌ２Ｏ３复合粉体经放电等离子超快速烧结得到晶内型的纳米复相陶瓷,超快速烧结的升温速率为６００℃／ｍｉｎ在烧结温度不保温,迅即在３ｍｉｎ内冷却到６００℃以下。     

YAG- Al2O3纳米复合材料的制备和力学性能

本文介绍了用化学共沉淀和在适当温度下煅烧以直接制备ＹＡＧ－Ａｌ２Ｏ３纳纳米复合粉体的新方法。ＸＲＤ结果表明,所得粉体具纯的ＹＡＧ和α－Ａｌ２Ｏ３相,因此其化学组成符合配料的组分设计,用本方法制备的２５ｖｏｌ％ＹＡＧ－Ａｌ２Ｏ３复合粉体经热压烧结,所得的致０密体材料为晶内型纳米复合材料,其抗弯强度达６１２ＭＰａ,断裂韧性为４．５４ＭＰａｍ＾－１／２,都比单相Ａｌ２Ｏ３陶瓷有大幅度提高。     

SiC－AlN－Y_2O_3复相陶瓷的制备与性能

通过热压烧结技术，ＳｉＣ、ＡｌＮ和Ｙ２Ｏ３粉末混合作在１９２０～２０５０℃、Ａｒ气氛下形成了致密的复相陶瓷．在室温下ＳｉＣ－ＡｌＮ－Ｙ２Ｏ３复相材料的抗弯强度和断裂韧性分别达到６００ＭＰａ和７ＭＰａ·ｍ１／２以上运用ＸＲＤ、ＳＥＭ和ＴＥＭ分析致密样品的断裂裂纹、形貌和组成．ＳｉＣ－ＡｌＮ－Ｙ２Ｏ３复相陶瓷在１３７０℃氧化试验３０ｈ，其氧化产物为莫来石．     

多孔陶瓷薄膜表面形貌研究

用原子力显微镜（ＡＦＭ）观察Ａｌ２Ｏ３、Ａｌ２Ｏ３－ＳｉＯ２及Ａｌ２Ｏ３－ＳｉＯ２－ＴｉＯ２复合陶瓷薄膜的表面形貌,Ｘ射线衍射（ＸＲＤ）分析表明,Ａｌ２Ｏ３薄膜的上为γ－Ａｌ２Ｏ３;Ａｌ２Ｏ３－ＳｉＯ２薄由γ－Ａｌ２Ｏ３和非晶诚ＳｉＯ２组成;而Ａｌ２Ｏ３－ＳｉＯ２－ＴｉＯ２薄膜的相成分为Ａｌ２Ｏ３、ＴｉＯ２、Ａｌ４Ｔｉ２ＳｉＯ１２和非晶态ＳｉＯ２,各相的含量随化学成分变化而变化,ＡＦＭ观察结果表明     

SiC-ZrO2(3Y)-Al2O3纳米复相陶瓷的力学性能和显微结构

本文介绍用非均相沉淀方法制备的纳米ＳｉＣ－ＺｒＯ２（３Ｙ）－Ａｌ２Ｏ３复合粉体经放电等离子超快速烧得到晶内型的纳米复相陶瓷,超快速烧结的升温速率为６００℃／ｍｉｎ,在烧结温度不保温,迅即在３ｍｉｎ内冷却至６００℃以下。     

SiC颗粒尺寸对Al2O3-SiC纳米复合陶瓷的影响

采用非均相沉积法制备含有不同粒径ＳｉＣ颗粒的Ａｌ２Ｏ３－ＳｉＣ复合粉体,粉体呈Ａｌ２Ｏ３包裹ＳｉＣ的开貌,经热压烧结获得致密烧结体,通过ＳＥＭ观察,Ａｌ２Ｏ３基体晶粒尺寸随着加入ＳｉＣ颗粒粒径的减小而减小。但减小的趋势比Ｚｅｎｅｒ模型预测的弱,力学性能随着加入ＳｉＣ颗粒粒径的减小而得到改善,这主要同ＳｉＣ颗粒对基体的弱化作用减弱及基体粒径变小有关。     

Naβ/β″-Al2O3膜的制备与电学性能研究

通过ＭｇＡｌ２Ｏ４－α－Ａｌ２Ｏ３复合相陶瓷基体与Ｌｉ２Ｏ，Ｎａ２Ｏ气氛的反应制备了Ｌｉ２Ｏ和ＭｇＯ共同稳定的Ｎａβ／β″－Ａｌ２Ｏ３膜，相分析的结果表明，反应温度是决定膜中β／β″Ａｌ２Ｏ３相形成速率的主要因素，当温度低于１１００℃时，α－Ａｌ２Ｏ３基体不能转化为β／β″－Ａｌ２Ｏ３基体中的ＭｇＡｌ２Ｏ４可以促进膜的形成，并降低膜的形成温度，交流复阻抗谱和四极法测量的结果表明，复合基体表面形成的     

Al2O3—SiO2—TiO2复合陶瓷薄膜的制备与结构

本文利用Ｓｏｌ－Ｇｅｌ法制备了Ａｌ２Ｏ－ＳｉＯ２－ＴｉＯ２复合陶瓷薄膜，讨论了主要内容是体系成分（Ａｌ：Ｓｉ：Ｔｉ摩尔比）对落膜制备过程及结构的影响。通过分步水解法可以得到稳定的Ａｌ２Ｏ３－ＳｉＯ２－ＴｉＯ２复合溶胶，进而制备复合陶瓷薄膜。组分间的静电作用是溶胶凝结的原因。三组分中，Ｓｉ／Ｔｉ摩尔比是决定溶胶稳定性的主要因素。通过ＸＲＤ对薄膜的相组成进行了分析，表明复合薄膜由Ａｌ４Ｔｉ２ＳｉＯ１２     

TiO2—Al—B系反应烧结制备的复相陶瓷和原位Al基复合材料

采用反应烧结方法，利用ＴｉＯ２，Ａｌ和Ｂ粉末间的放热反应的较低的温度下制备Ａｌ２Ｏ３－ＴｉＢ２复相陶瓷和原位生长Ａｌ２Ｏ３和ＴｉＢ２弥散粒子增强Ａｌ复合，Ａｌ２Ｏ３－ＴｉＢ２复相陶瓷是密度ρ－０．８的多孔体，由尺寸小于２μｍ，在基体中呈现均匀分布，没有发现Ａｌ３Ｔｉ生成，这种原位Ａｌ基复合材料具有优于ＳｉＣｗ／Ａｌ复合材料的强度。     

Magnetic coupling in La0.67Ca0.33MnO3/La0.67Sr0.33CoO3/La0.67Ca0.33MnO3 sandwiches

La_0.67Ca_0.33MnO₃ (LCMO)/La_0.67Sr_0.33CoO₃ (LSCO)/LCMO trilayer films are fabricated on single-crystal substrates NdGaO₃ (110) and the interlayer coupling are investigated. Compared with LCMO single layer, sandwiches showed the enhanced metal-insulator transition temperature of LCMO layers. The magnetoresistance is dependent on spacer thickness and the peak value dramatically decreases when LSCO layer is thick enough because of shorting by the LSCO layer. The magnetic coercivity H_C shows a nonmonotonic behavior with changing spacer layer thickness and the waist-like hysteresis indicates that there is an indirect exchange coupling between the top and bottom LCMO layers across the spacer layer.     

Varistor properties of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-In2O3 ceramics

The varistor properties of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-In₂O₃ ceramics were investigated for different concentrations of In₂O₃. The increase of In₂O₃ concentration slightly increased the sintered density (5.60-5.63 g/cm³) and slightly decreased the average grain size (3.4-2.9 μm). The breakdown field increased from 6023 to 14822 V/cm with increasing concentration of In₂O₃. The nonlinear coefficient increased from 17.6 to 44.6 for up to 0.005 mol%, whereas the further doping caused it to decrease to 36.8. In₂O₃ acted as an acceptor due to the donor concentration, which decreases in the range of 1.02 × 10¹⁷ to 0.24 × 10¹⁷/cm³ with increasing concentration of In₂O₃.     

Microstructures of YBa2Cu3O7/La0.7Ca0.3MnO3 and La0.7Ca0.3MnO3/YBa2Cu3O7 bi-layers grown on (001)LaAlO3

Epitaxial YBa₂Cu₃O₇/La_0.7Ca_0.3MnO₃ (YBCO/LCMO) bi-layers and La_0.7Ca_0.3MnO₃/YBa₂Cu₃O₇ (LCMO/YBCO) bi-layers were grown on (001)LaAlO₃ by pulsed laser deposition, and their microstructures were compared by transmission electron microscopy investigation. In the YBCO(100 nm)/LCMO(150 nm) bi-layers, the LCMO layer consists of columnar grains of ~ 17 nm in diameter and contains mixed orientation domains of [100]_c, [010]_c and [001]_c. The YBCO layer is totally c-axis oriented and the YBCO lattices are tilted − 2.5° to + 2.5° as they grew on the rough surfaces of LCMO columnar grains. For the LCMO(140 nm)/YBCO(140 nm) bi-layers, the LCMO/YBCO interface is sharp and flat. The initial 12-nm thickness of the YBCO layer is composed of c-axis oriented domains, and the upper part of YBCO layer is [100] oriented. The LCMO layer was predominantly [001]_c oriented while [100]_c-oriented domains were occasionally observed.     

Nanocrystallization of SrBi2Nb2O9 from glasses in the system Li2B4O7---SrO---Bi2O3---Nb2O5

Transparent glasses in the system (100−x)Li₂B₄O₇–x(SrO---Bi₂O₃---Nb₂O₅) (10≤x≤60) (in molar ratio) were fabricated by a conventional melt-quenching technique. Amorphous and glassy characteristics of the as-quenched samples were established via X-ray powder diffraction (XRD) and differential thermal analyses (DTA) respectively. Glass–ceramics embedded with strontium bismuth niobate, SrBi₂Nb₂O₉ (SBN) nanocrystals were produced by heat-treating the as-quenched glasses at temperatures higher than 500 °C. Perovskite SBN phase formation through an intermediate fluorite phase in the glass matrix was confirmed by XRD and transmission electron microscopy (TEM). Infrared and Raman spectroscopic studies corroborate the observation of fluorite phase formation. The dielectric constant (_r) and the loss factor (D) for the lithium borate, Li₂B₄O₇ (LBO) glass comprising randomly oriented SBN nanocrystals were determined and compared with those predicted based on the various dielectric mixture rule formalism. The dielectric constant was found to increase with increasing SBN content in LBO glass matrix.     

PbSbBiS4-Sb2S3 and PbSbBiS4-Bi2S3 joins in the PbS-Sb2S3-Bi2S3 system

Phase equilibria along the PbSbBiS₄-Sb₂S₃ and PbSbBiS₄-Bi₂S₃ joins of the PbS-Sb₂S₃-Bi₂S₃ system have been studied for the first time using differential thermal analysis, X-ray diffraction, microstructural analysis, microhardness tests, and density measurements, and the phase diagrams of the joins have been mapped out. The joins are shown to be pseudobinary with limited series of terminal solid solutions. The solid solutions are p-type semiconductors.     

Syntheses of hollandite type Rb2Cr8O16, K2Cr2V6O16 and K2V8O16

Hollandite-type compounds, Rb₂Cr₈O₁₆, K₂Cr₂V₆O₁₆ and K₂V₈O₁₆, were synthesized under high P-T conditions up to 1200°C and 7GPa. The structural refinement using a single crystal of Rb₂Cr₈O₁₆ confirms that the structure is similar to that of K₂Cr₈O₁₆. Magnetic measurements indicate that Rb₂Cr₈O₁₆ is ferromagnetic below 295K, K₂Cr₂V₆O₁₆ paramagnetic down to 77K and K₂V₈O₁₆ has susceptibility anomaly at 175K. These compounds are all semiconductive and show discontinuities in temperature-resistivity curves at points corresponding to magnetic anomalies.     

Structural study of Sr0.3Ba0.7Nb2O6 and La0.030Sr0.255Ba0.700Nb2O6 ceramic systems

Sr_0.3Ba_0.7Nb₂O₆ (SBN) and La_0.030Sr_0.255Ba_0.700Nb₂O₆ (LSBN) ceramic compounds have been prepared using the traditional ceramic method at two different calcination temperatures (900 and 1000 °C) and later sintered both at 1400 °C. A study of the effects of the calcination temperatures and La substitution on the morphological, compositional, and structural properties of SBN and LSBN is presented using scanning electronic microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD) analysis. From Rietveld refinement processes, the XRD patterns were interpreted to evaluate such effects in the structural parameters and the site occupation factors of the heavy metals and oxygen atoms. The effect of the incorporation of La resulted in a 0.25% cell contraction and turned out to be higher than the 0.08% dilation effect produced by the increase of calcination temperature. The La ion with similar effective ionic radius and higher electronegativity is incorporated into the structure occupying the A₁ site just like the Sr ions in the SBN compound. Differences in the site occupation factors between the SBN and LSBN samples lead to substantial changes in the physical properties such as temperature of relative dielectric constant maximum, relative dielectric constant, and dielectric loss, correlated with the distortion and the relative orientation of the oxygen octahedra.     

Vapour-liquid equilibria in the ternary mixtures N2---CH4---C2H6 and N2---C2H6---C3H8

A systematic study was performed with mixtures consisting of N₂, CH₄, C₂H₆ and C₃H₈, to investigate experimentally phase equilibria and caloric properties and to test the accuracy of thermodynamic correlations. The first part of this Paper reports results of T---p---x---y measurements on ternary systems in the range 20 < p < 120 bar and 140 < T < 220 K. The results are compared with data calculated by generalized equations of state.     

静电纺丝法制备的Co0.6Ni0.3Cu0.1Fe2O4和Co0.6Ni0.3Zn0.1Fe2O4纳米纤维的结构及磁性能

采用静电纺丝技术制备出表面光滑、直径均匀的Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4/PVP和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4/PVP纳米纤维前驱丝,经500~900℃煅烧后得到Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维。用TG-DSC、XRD、SEM及VSM现代测试分析手段对Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维的结构、形貌及磁学性能进行测试表征。结果表明:在空气气氛中经500~900℃煅烧后可得到纯尖晶石相、结晶度良好的纳米纤维或短纤维;当温度为700℃时,Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维的形貌细长而光滑且直径相对均匀,大约为80nm;此时Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4纳米纤维则保有较高的剩磁比(M_r/M_s)及矫顽力,分别为0.56和1 088.87Oe。在500℃、600℃、700℃、800℃、900℃煅烧后,Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维的饱和磁化强度分别比Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4纳米纤维增大了14.5%、7%、16%、10.7%、8%,而矫顽力则分别降低了38%、51%、50%、46%、46.7%。两种纳米纤维的饱和磁化强度及矫顽力存在差异,为CoNi铁氧体在电磁方面的应用提供了很好的参考。     

The effect of Bi1.5Zn0.5Nb0.5Ti1.5O7 cover layer on the dielectric and tunable properties of Ba0.6Sr0.4TiO3/Bi1.5Zn0.5Nb0.5Ti1.5O7 bilayered thin films

Bi_1.5Zn_0.5Nb_0.5Ti_1.5O₇ (BZNT) thin films with different thicknesses as cover layers were deposited on the Ba_0.6Sr_0.4TiO₃ (BST) thin films on the Pt/Ti/SiO₂/Si substrates by radio frequency magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of BST/BZNT heterogeneous bilayered films were investigated as a function of the thickness of BZNT films and the effect of BZNT films on the asymmetric electrical properties of BST/BZNT bilayered films was discussed. It was found that BZNT cover layer significantly improved the leakage current and the dielectric loss, and the dielectric constant and tunability of BST/BZNT bilayered thin films simultaneously decreased with the increasing thickness of BZNT films. The BST/BZNT bilayered thin film with a 50 nm BZNT cover layer gave the largest figure of merit (FOM) of 33.48 with the upper tunability of 55.38%. The asymmetric electrical behavior of BST/BZNT bilayered films is probably related to an internal electric field caused by built-in voltages at Pt/BST and BZNT/Au interfaces.