Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate

Homogeneous columnar Cu film with fully embedded nanotwins was successfully fabricated on Ti/Cu seed layer on silicon wafer. The nanotwins with thickness of tens of nanometers are generally parallel to the silicon surface, showing a strong (111) preferred orientation. The acid concentration was found to be important in influencing the formation of nanoscale twins. By adjusting the acid concentration, the nanotwins can be induced from the top columnar grain to middle columnar grain and reach the bottom equiaxed grain, and a microstructural transformation model was given. A theory focusing on the cathode overpotential was proposed to reveal the effect of acid concentration on the growth mechanism of nanoscale twins. An appropriate adsorption proportion of hydrogen on cathode (acid concentration 17 ml L^?1) could increase the overpotential which supplies adequate nucleation energy for nanoscale twins formation.     

Growth of high-density titanium silicide nanowires in a single direction on a silicon surface

Understanding the growth mechanisms of nanowires is essential for their successful implementation in advanced devices applications. In situ ultrahigh-vacuum transmission electron microscopy has been applied to elucidate the interaction mechanisms of titanium disilicide nanowires (TiSi2 NWs) on Si(111) substrate. Two phenomena were observed: merging of the two NWs in the same direction, and collapse of one NW on a competing NW in a different direction when they meet at the ends. On the other hand, as one NW encounters the midsection of the other NW in a different direction, it recedes in favor of bulging of the other NW at the midsection. Since crystallographically the nanowires are favored to grow on Si(110) only in the [1 -1 0] direction, this crucial information has been fruitfully exploited to focus on the growth of a high density of long and high-aspect-ratio Ti silicide NWs parallel to the surface on Si(110) in a single direction. The achievement in growth of high-density NWs in a single direction represents a significant advance in realizing the vast potential for applications of silicide NWs in nanoelectronics devices.     

Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy

GaAs nanowires were selectively grown by metal-organic vapour-phase epitaxy within a SiO(2) mask window pattern fabricated on a GaAs(111)B substrate surface. The nanowires were 100-3000?nm in height and 50-300?nm in diameter. The height decreased as the mask window diameter was increased or the growth temperature was increased from 700 to 800?°C. The dependence of the nanowire height on the mask window diameter was compared with a calculation, which indicated that the height was inversely proportional to the mask window diameter. This suggests that the migration of growth species on the nanowire side surface plays a major role. Tetrahedral GaAs grew at an early stage of nanowire growth but became hexagonal as the growth process continued. The calculated change in Gibbs free energy for nucleation growth of the crystals indicated that tetrahedra were energetically more favourable than hexagons. Transmission and scanning electron microscopy analyses of a GaAs nanowire showed that many twins developed along the [Formula: see text] B direction, suggesting that twins had something to do with the evolution of the nanowire shape from tetrahedron to hexagon.     

Photoluminescence and field-emission characteristics of ZnO nanowires synthesized by two-step method

ZnO nanowires with excellent photoluminescence (PL) and field-emission properties were synthesized by a two-step method, and the ZnO nanowires grew along (0 0 2) direction. PL measurements showed that the ZnO nanowires have stronger ultraviolet emission properties at 376 nm and there is 3 nm blue shift after the nanowires were immersed in thiourea (TU) solution compared with those of without immersion. The immersed-ZnO nanowires show a turn-on field of 2.3 V/μm at a current density of 0.1 μA/cm and emission current density up to 1 mA/cm² at an applied field of 6.8 V/μm, which demonstrate that the immersed-ZnO nanowires posses efficient field-emission properties in contrast with those not immersed. The ZnO nanowires may be ideal candidates for making luminescent devices and field-emission displays.     

Control of growth orientation and shape for epitaxially grown In2O3 nanowires on a-plane sapphire

Vertically aligned indium oxide nanowires were grown on a-plane sapphire substrate by the method of catalyst-assisted carbothermal reduction. The morphology and crystal structure of the nanowires are determined by X-ray diffraction, transmission electron microscopy and field-emission scanning electron microscopy. Two types of In₂O₃ nanowires were found by controlling the growth conditions. The nanowires with a hexagonal cross-section were shown to grow in [1 1 1] direction, whereas those with a square cross-section grow in [0 0 1] direction. In addition to the temperature effects, the concept of supersaturation in Au catalyst is proposed to explain the formation of these two types of nanowires. Besides, tapering, which is explained with the interplay between the vapor-liquid-solid and vapor-solid growth mechanisms, is observed in the nanowires.     

Synthesis of silver nanowires in aqueous solutions

Silver nanowires with a diameter of 30 nm and typical lengths of 5-10 μm have been synthesized in an aqueous medium. To initiate the reaction, citrate ions were used, and during the reaction the aromatic organic molecules polymerize forming “straight” chain surfactants which support the formation of nanowires. Characterization by TEM and HRETM revealed the nanowires to be highly crystalline with a growth along the [110] direction.     

Bidirectional growth of indium phosphide nanowires

We present a bidirectional growth mode of InP nanowires grown by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). We studied the effect of the supply ratio of DEZn ([DEZn]) on InP grown structure morphology and crystal structures during the SA-MOVPE. Two growth regimes were observed in the investigated range of the [DEZn] on an InP(111)B substrate. At low [DEZn], grown structures formed tripod structures featuring three nanowires branched toward the [111]A directions. At high [DEZn], we obtained hexagonal pillar-type structures vertically grown on the (111)B substrate. These results show that the growth direction changes from [111]A to [111]B as [DEZn] is increased. We propose a growth mechanism based on the correlation between the incident facet of rotational twins and the shapes of the grown structures. Our results bring us one step closer to controlling the direction of nanowires on a Si substrate that has a nonpolar nature. They can also be applied to the development of InP nanowire devices.     

Crabwise ZnO Nanowire UV Photodetector Prepared on ZnO : Ga/Glass Template

Vertical well-aligned and crabwise ZnO nanowires were prepared on patterned ZnO:Ga/glass substrates by reactive evaporation method under different growth conditions. The average length and diameter of vertical well-aligned ZnO nanowires were around 1 mum and 50-100 nm, respectively. In contrast, the average length and diameter of crabwise ZnO nanowires were around 5 mum and 30 nm, respectively. Upon illumination with UV light (lambda = 362 nm), it was found that measured responsivities were 0.015 and 0.03 A/W for the crabwise ZnO nanowire photodetector biased at 10 and 15 V, respectively. Furthermore, a rejection ratio of approximately 10 was obtained for the crabwise ZnO nanowire photodetector with an applied bias of 10 V.     

Conversion of potassium titanate nanowires into titanium oxynitride nanotubes

Tunnel-structured potassium titanate with a K(3)Ti(8)O(17) phase was synthesized by direct oxidation of titanium powder mixed with KF(aq) in water vapor at 923 K. The reaction conditions were adjusted so that uniform single crystalline potassium titanate nanowires with [010] growth direction (length: 5-30 μm, diameter: 80-100 nm) were obtained. Nitridation of the nanowires by NH(3)(g) at 973-1073 K converted the titanate nanowires into rock-salt structured cubic phase single crystalline titanium oxynitride TiN(x)O(y) nanotubes (x = 0.88, y = 0.12, length = 1-10 μm, diameter = 150-250 nm, wall thickness = 30 - 50 nm) and nanorods (x = 0.5, y = 0.5, length = 1-5 μm, diameter = 100-200 nm) with rough surfaces and [200] growth direction. The overall conversion of the titanate nanowires into the nanotubes and the nanorods can be rationalized by Ostwald ripening mechanism. We fabricated an electrode by adhering TiN(x)O(y) nanotubes (0.2 mg) on a screen-printed carbon electrode (geometric area: 0.2 cm(2)). Electrochemical impedance spectroscopy demonstrated its charge transfer resistance to be 20Ω. The electrochemical surface area of the nanotubes on the electrode was characterized by cyclic voltammetry to be 0.32 cm(2). This property suggests that the TiN(x)O(y) nanostructures can be employed as potential electrode materials for electrochemical applications.     

Bicrystalline zinc oxide nanocombs

Bicrystalline ZnO nanocombs have been prepared by zinc powder evaporation at 650 degrees C. Structural analysis showed that as-synthesized samples are composed of two crystals that form a twin structure parallel to the (113) plane with the growth direction of the branching nanowires and the main stem closely parallel to (0001) and (0110), respectively. Due to the unique twin structures, both sides of the main stems could be Zn-terminated ZnO(0001) polar surfaces. The chemically active surfaces make the aligned branching nanowires grow from both sides of the main stems, which is consistent with the structure of the obtained bicrystalline nanomaterials. The growth of bicrystalline ZnO nanocombs can be explained by polar-surface dominated growth and twins induced growth mechanisms.     

Microstructural development of an electrodeposited Ni layer

This study investigated the microstructural development of an electrodeposited Ni layer formed from an additive-free Watt's bath. The major texture component of the electrodeposited Ni layer is strong < 110> fiber. The electrodeposited Ni layer consists of epitaxial regions with a thickness of about 100 nm and fine columnar grains extending along the growth direction. The fine columnar grains contain a high density of twins parallel to the growth direction. These twins were formed at side {111} facets during the lateral growth of the electrodeposited Ni layer. We surmise that the twins formed in order to change the orientation so that the energy of boundary between the existing grain, on which twin related grains nucleated, could be reduced.     

Template assisted electrochemical growth of cobalt nanowires: influence of deposition conditions on structural, optical and magnetic properties

The influence of electrodeposition potential, pH, composition and temperature of the electrolytic bath on the structure of cobalt nanowires arrays electrodeposited into anodic aluminum oxide (AAO) porous membranes is reported. XRD, SEM, and TEM analysis were employed to characterize structural (crystal phase, crystallographic texture, and grain size), and morphological nanowire properties. It was confirmed that at pH 2 the electrodeposition potential has not influence on the preferred crystallographic orientation of the electrochemically grown Co nanowires. At pH 4 the electrodeposition potential controls the growth of cobalt nanowires along some preferential crystallographic planes. The electrolytic pH bath modulates the fcc or hcp phase exhibited by the cobalt nanowires. Single crystalline nanowires with a hcp phase strongly oriented along the (2021) crystallographic plane were obtained at pH 4 and at -1.1 V (vs. Ag/AgCl), a result not previously reported. High electrolytic bath temperatures contributed to improve the single crystalline character of the cobalt nanowires. The presence of chloride anion in the electrolytic bath also influenced on the structural properties of the resulting cobalt nanowires, improving their crystallinity. The optical reflectance of the samples shows a structure in the UV-blue region that can be assigned to the two-dimensional morphology arising in the shape of the almost parallel nanowires. Magnetic measurements showed that different electrodeposition potentials and electrolytic bath pH lead to different magnetic anisotropies on the nanowire array samples.     

Microwave-hydrothermal synthesis and structural characterization of PX-phase single-crystalline PbTiO3 nanowires by electron microscopy

PX-phase PbTiO₃ (PT) nanowires were synthesized by microwave-hydrothermal process, and their microstructures were characterized by electron microscopy. The PX-phase PT nanowires exhibit acicular morphology with diameter sizes of 20-80 nm and length over 1 µm. They tend to grow into a regular structure with parallel arrangement along their long axis in the [001] direction. Selected area electron diffraction patterns demonstrate the PX-phase PT nanowires with a 3-fold modulated periodicity along the [110] direction and a 4-fold modulated periodicity in the [001] direction. These results were also confirmed by the high-resolution transmission electron microscopy images.     

Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition

Epitaxial growth of vertical GaAs nanowires on Si(111) substrates is demonstrated by metal-organic chemical vapor deposition via a vapor-liquid-solid growth mechanism. Systematic experiments indicate that substrate pretreatment, pregrowth alloying temperature, and growth temperature are all crucial to vertical epitaxial growth. Nanowire growth rate and morphology can be well controlled by the growth temperature, the metal-organic precursor molar fraction, and the molar V/III ratio. The as-grown GaAs nanowires have a predominantly zinc-blende crystal structure along a <111> direction. Crystallographic {111} stacking faults found perpendicular to the growth axis could be almost eliminated via growth at high V/III ratio and low temperature. Single nanowire field effect transistors based on unintentionally doped GaAs nanowires were fabricated and found to display a strong effect of surface states on their transport properties.     

Field emission from nonaligned zinc oxide nanowires

Zinc oxide (ZnO) nanowires with an average diameter of 15 nm were grown using a vapor phase transport process. Field emission was achieved from these nanowires in spite of their random orientation. The electric field for the extraction of a 10 μA/cm² current density was measured to range from 4.4 to 5.0 V/μm, and that for a 1 mA/cm² current density from 7.6 to 8.7 V/μm, depending on whether the sample was submitted to a heat treatment. The results exhibit the potential application of ZnO nanowires as field emitters in future flat panel displays.     

A novel method for massive fabrication of β-SiC nanowires

Silicon carbide nanowires (NWs), that were over 200 μm in length and 20–200 nm in diameter, were prepared by high-pressure reaction from SiBONC powder tablets. Annealing temperatures between 1,500 °C and 1,600 °C and Si/B molar ratios between 70:30 and 60:40 were suitable for the growth of the nanowires. The nanowires were fabricated by in situ chemical vapor growth process on the tablets. The SiC nanowires were identified as single crystal β-SiC. The analysis of X-ray diffraction (XRD) and transmission electron microscopy (TEM) showed the single crystalline nature of nanowires with a growth direction of <111>. Massive growth of single crystalline SiC nanowires is important to meet the requirements of the fabrication of SiC nanowire-based nanodevices.     

Vertically aligned cadmium chalcogenide nanowire arrays on muscovite mica: a demonstration of epitaxial growth strategy

We report a strategy for achieving epitaxial, vertically aligned cadmium chalcogenide (CdS, CdSe, and CdTe) nanowire arrays utilizing van der Waals epitaxy with (001) muscovite mica substrate. The nanowires, grown from a vapor transport process, exhibited diameter uniformity throughout their length, sharp interface to the substrate, and positive correlation between diameter and length with preferential growth direction of [0001] for the monocrystalline wurtzite CdS and CdSe nanowires, but of [111] for zinc blende CdTe nanowires, which also featured abundant twinning boundaries. Self-catalytic vapor-liquid-solid mechanism with hydrogen-assisted thermal evaporation is proposed to intepret the observations. Optical absorption from the as-grown CdSe nanowire arrays on mica at 10 K revealed intense first-order exciton absorption and its longitudinal optical phonon replica. A small Stokes shift (～1.3 meV) was identified, suggesting the high quality of the nanowires. This study demonstrated the generality of van der Waals epitaxy for the growth of nanowire arrays and their potential applications in optical and energy related devices.     

3D Atomic‐Scale Insights into Anisotropic Core–Shell‐Structured InGaAs Nanowires Grown by Metal–Organic Chemical Vapor Deposition

III–V ternary InGaAs nanowires have great potential for electronic and optoelectronic device applications; however, the 3D structure and chemistry at the atomic‐scale inside the nanowires remain unclear, which hinders tailoring the nanowires for specific applications. Here, atom probe tomography is used in conjunction with a first‐principles simulation to investigate the 3D structure and chemistry of InGaAs nanowires, and reveals i) the nanowires form a spontaneous core–shell structure with a Ga‐enriched core and an In‐enriched shell, due to different growth mechanisms in the axial and lateral directions; ii) the shape of the core evolves from hexagon into Reuleaux triangle and grows larger, which results from In outward and Ga inward interdiffusion occurring at the core–shell interface; and iii) the irregular hexagonal shell manifests an anisotropic growth rate on {112}A and {112}B facets. Accordingly, a model in terms of the core–shell shape and chemistry evolution is proposed, which provides fresh insights into the growth of these nanowires.     

Wurtzite ZnSe nanowires: growth, photoluminescence, and single-wire Raman properties

Wurtzite ZnSe nanowires were prepared on GaAs substrates in a metal-organic chemical vapour deposition system. Electron microscopy shows that they are smooth and uniform in size. Both transmission electron microscopy and x-ray diffraction reveal the wurtzite structure of the nanowires, which grows along the [Formula: see text] direction. Raman scattering studies on individual nanowires were performed in the back-scattering geometry at room temperature. Besides the commonly observed longitudinal and transverse optical phonon modes, a possible surface mode located at 233?cm(-1) is also observed in the Raman spectrum. A peak located at 2.841?eV was clearly observed in the photoluminescence spectra of the nanowires, which can be assigned to near band edge emissions of wurtzite ZnSe.     

Fabrication of reliable semiconductor nanowires by controlling crystalline structure

One-dimensional SnO(2) nanomaterials with wide bandgap characteristics are attractive for flexible and/or transparent displays and high-performance nano-electronics. In this study, the crystallinity of SnO(2) nanowires was regulated by controlling their growth temperatures. Moreover, the correlation of the crystallinity of nanowires with optical and electrical characteristics was analyzed. When SnO(2) nanowires were grown at temperatures below 900?°C, they showed various growth directions and abnormal discontinuity in their crystal structures. On the other hand, most nanowires grown at 950?°C exhibited a regular growth trend in the direction of [100]. In addition, the low temperature photoluminescence measurement revealed that the higher growth temperatures of nanowires gradually decreased the 500 nm peak rather than the 620 nm peak. The former peak is derived from the surface defect related to the shallow energy level and affects nanowire surface states. Owing to crystallinity and defects, the threshold voltage range (maximum-minimum) of SnO(2) nanowire transistors was 1.5 V at 850?°C, 1.1 V at 900?°C, and 0.5 V at 950?°C, with dispersion characteristics dramatically decreased. This study successfully demonstrated the effects of nanowire crystallinity on optical and electrical characteristics. It also suggested that the optical and electrical characteristics of nanowire transistors could be regulated by controlling their growth temperatures in the course of producing SnO(2) nanowires.