共查询到18条相似文献,搜索用时 93 毫秒
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新型光刻技术的现状与进展 总被引:1,自引:0,他引:1
大尺寸、细线宽、高精度、高效率、低成本成为IC产品发展的趋势,随着集成度的提高,芯片制造中最关键的制造工艺--光刻技术也面临着愈来愈多的难题.新兴的193 nm浸入式技术、157 nm极短紫外光刻(Euv)、电子束投影光刻(EPL)、纳米压印光刻等技术将是解决这些问题的关键.介绍了193nm浸入式技术、157nm光刻技术、电子束投影(EPL)光刻技术以及纳米压印光刻技术.指出纳米压印光刻技术具有生产效率高、成本低、工艺过程简单等优点,能实现分辨率达5 nm以下的水平,是最具发展前途的下一代光刻技术之一. 相似文献
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微纳加工技术推动着集成电路不断缩小器件尺寸和提高集成度,而电子束光刻在纳米光刻技术制作中是最好的方法之一。介绍了近年来电子束光刻技术的研究进展及其在微%纳器件研制中的重要作用。 相似文献
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Sandip Kundu Aswin Sreedhar Alodeep Sanyal 《Journal of Computer-Aided Materials Design》2007,14(1):79-89
Moore’s Law has been the most important benchmark for microelectronics development over the past four decades. It has been
interpreted to mean that critical dimensions (CD) of a design must shrink geometrically over time. The chip-level integration
of devices has been possible through concurrent improvement in lithographic resolution. The lithographic resolution was primarily
improved by moving deeper into ultraviolet spectrum of light. However, the wavelength of the optical source used for lithography
has not improved for nearly a decade. This has lead to the development of sub-wavelength lithography. The diffraction effects
of sub-wavelength lithography were offset by optical proximity correction (OPC), phase shift masking (PSM) and impending move
to immersion lithography. Unfortunately, one time benefits from each of these resolution enhancement techniques (RET) have
nearly exhausted. In this paper, we explore one important diffraction aspect of sub-wavelength lithography viz. the forbidden pitch phenomenon and its implication on future designs. We studied Forbidden pitches in context of 65 and
45 nm technologies using aerial imaging simulation. Aerial imaging simulation is computationally expensive and is not possible
to perform on entire layout structures. Based on results from our simulations on selected patterns, we observe that in absence
of any other resolution enhancement technique, many of the current layout patterns will be disallowed in 45 nm technology.
Such restrictions significantly mitigate the benefit of migration to 45 nm technology in terms of area, power and performance
of a design. We further show that even structured gate array based designs are not immune to this problem. 相似文献
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Guoqiang Liu Michael Hirtz Harald Fuchs Zijian Zheng 《Small (Weinheim an der Bergstrasse, Germany)》2019,15(21)
Dip‐pen nanolithography (DPN) is a unique nanofabrication tool that can directly write a variety of molecular patterns on a surface with high resolution and excellent registration. Over the past 20 years, DPN has experienced a tremendous evolution in terms of applicable inks, a remarkable improvement in fabrication throughput, and the development of various derivative technologies. Among these developments, polymer pen lithography (PPL) is the most prominent one that provides a large‐scale, high‐throughput, low‐cost tool for nanofabrication, which significantly extends DPN and beyond. These developments not only expand the scope of the wide field of scanning probe lithography, but also enable DPN and PPL as general approaches for the fabrication or study of nanostructures and nanomaterials. In this review, a focused summary and historical perspective of the technological development of DPN and its derivatives, with a focus on PPL, in one timeline, are provided and future opportunities for technological exploration in this field are proposed. 相似文献
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通过对接近式光刻中光通过掩模版后的近场衍射特性的计算机模拟分析和曝光实验,提出了一种新型的接近式衍射小曝光方法,适用于紫外和X射线的接近曝光技术条件下,实现缩小曝光,可使实现亚半微米线宽图形的曝光和使基掩模版制作更为容易;并且具有等量缩小和焦深大的特点。 相似文献
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Interferometric lithography (IL) is a powerful technique for the definition of large-area, nanometer-scale, periodically patterned structures. Patterns are recorded in a light-sensitive medium, such as a photoresist, that responds nonlinearly to the intensity distribution associated with the interference of two or more coherent beams of light. The photoresist patterns produced with IL are a platform for further fabrication of nanostructures and growth of functional materials and are building blocks for devices. This article provides a brief review of IL technologies and focuses on various applications for nanostructures and functional materials based on IL including directed self-assembly of colloidal nanoparticles, nanophotonics, semiconductor materials growth, and nanofluidic devices. Perspectives on future directions for IL and emerging applications in other fields are presented. 相似文献
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自1959年集成电路发明以来,它已经对人类的生产和生活方式的很多方面产生了极其重大的影响。集成电路正以线宽每年缩小30%、集成规模增长1倍、芯片价格随之下降的惊人速度发展。光刻技术的发展始终是集成电路发展的决定因素。本文综述了深亚微米光刻和纳米光刻技术。在光学光刻部分,简要描述了光刻的历史演变,较详细综述了光学光刻的最新进展,如相移掩模、离轴照明及深紫外曝光。最后介绍了电子束曝光及X射线曝光的发展状况及SIM纳米加工的发展状况。 相似文献