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1.
新型光刻技术的现状与进展   总被引:1,自引:0,他引:1  
大尺寸、细线宽、高精度、高效率、低成本成为IC产品发展的趋势,随着集成度的提高,芯片制造中最关键的制造工艺--光刻技术也面临着愈来愈多的难题.新兴的193 nm浸入式技术、157 nm极短紫外光刻(Euv)、电子束投影光刻(EPL)、纳米压印光刻等技术将是解决这些问题的关键.介绍了193nm浸入式技术、157nm光刻技术、电子束投影(EPL)光刻技术以及纳米压印光刻技术.指出纳米压印光刻技术具有生产效率高、成本低、工艺过程简单等优点,能实现分辨率达5 nm以下的水平,是最具发展前途的下一代光刻技术之一.  相似文献   

2.
针对微纳制造中光刻环节的光衍射限制,讨论了可能成为下一代光刻技术路线的压印光刻。通过对比热压印、微接触转印及常温压印的技术特点,设计了一套低成本、结构简单的紫外光固化常温压印光刻机构。其大行程纳米级定位、纳米级下压系统消除了压印过程中的机构热变形误差、驱动间隙、蠕动误差等,具有分步式纳米级驱动多场压印及纳米级下压加载能力,可实现多次重复高保真图形复制。  相似文献   

3.
掩模投影成像干涉光刻研究   总被引:2,自引:0,他引:2  
掩模投影成像干涉光刻技术以在很小或几乎不增加光刻系统成本的基础上来提高光刻分辨率为目的,充分利用系统的有限孔径,将掩模图形不同的空间频率分别进行传递,最终以高分辨率对掩模成像。本文阐述了IIL的基本原理,介绍了一种实验系统,并给出了部分模拟和实验结果。研究结果表明,掩模投影成像干涉光刻技术比传统投影光刻能够得到更高的光刻分辨率。  相似文献   

4.
用于100nm节点ArF准分子激光光刻的相移掩模(PSM)技术主要有无铬相移掩模(CPM),交替相移掩模(APSM)、衰减相移掩模(AttPSM)和混合相移掩模技术。对这些掩模的基本原理、制作方法及性能比较进行了分析研究。研究表明,无铬相位光刻(CPL)PSM和高透AttPSM 相结合构成的混合掩模最适合用于193nmArF光刻,以产生100nm节点抗蚀剂图形。  相似文献   

5.
衰减相移掩模光刻技术研究   总被引:1,自引:1,他引:0  
冯伯儒  张锦 《光电工程》1999,26(5):4-8,12
论述了衰减相移掩模光刻技术的原理和曝光实验研究,给出了光刻曝光实验部分结果,并与我刻方法作了比较。  相似文献   

6.
无掩模激光干涉光刻中的分束方法一般有波前分割和振幅分割。研究和比较了振幅分割无 掩模激光干涉光刻方法和系统,包括振幅分割双光束干涉系统、三光束干涉系统、液浸式深紫外干涉系统及全自动干涉光刻系统。建立了双光束双曝光干涉光刻实验系统。模拟和实验结果表明,对点阵或孔阵图形,在同样的图形尺度下,无掩模干涉光刻比传统光刻简单得多。  相似文献   

7.
用于立体光刻的光聚合材料及其发展   总被引:4,自引:0,他引:4  
孟怀东  阴金香 《功能材料》1997,28(3):247-252
介绍了立体光刻技术制造模型的基本原理,并对用于立体光刻的光聚合材料以及当前发展趋势进行了讨论。  相似文献   

8.
本文系统地论述了提高光刻分辨率的相移掩模技术的基本原理、计算模拟和光刻曝光实验 ;给出了模拟和实验结果 ;研究表明 ,只有在一定的临界参数条件下 ,相移掩模才能明显地改善分辨率和工艺宽容度 ;采用无铬相移掩模得到了 0 .2 μm的清晰抗蚀剂图形 ,证明了相移掩模在提高光刻分辨率、延长光刻技术寿命以及推进光刻技术极限发展方面的优良性能  相似文献   

9.
陈炯枢 《真空与低温》2007,13(1):6-15,24
微纳加工技术推动着集成电路不断缩小器件尺寸和提高集成度,而电子束光刻在纳米光刻技术制作中是最好的方法之一。介绍了近年来电子束光刻技术的研究进展及其在微%纳器件研制中的重要作用。  相似文献   

10.
光刻技术及其极限和发展前景   总被引:2,自引:0,他引:2  
冯伯儒 《光电工程》1994,21(2):57-64
介绍了一些新的光刻技术及光刻技术的极限和发展前景。  相似文献   

11.
掩模制作是电子束散射角限制投影光刻(SCALPEL)的关键技术。通过优化工艺,制作出具有“纳米硅镶嵌结构”的低应力SiNx薄膜作为支撑;开发了电子束直写胶图形的加法工艺,在支撑薄膜上得到清晰的钨 / 铬散射体图形。研制出的SCALPEL掩模,其晶片尺寸为80mm,图形线宽达到0.1m,经缩小投影曝光得到78nm的图形分辨力。  相似文献   

12.
Moore’s Law has been the most important benchmark for microelectronics development over the past four decades. It has been interpreted to mean that critical dimensions (CD) of a design must shrink geometrically over time. The chip-level integration of devices has been possible through concurrent improvement in lithographic resolution. The lithographic resolution was primarily improved by moving deeper into ultraviolet spectrum of light. However, the wavelength of the optical source used for lithography has not improved for nearly a decade. This has lead to the development of sub-wavelength lithography. The diffraction effects of sub-wavelength lithography were offset by optical proximity correction (OPC), phase shift masking (PSM) and impending move to immersion lithography. Unfortunately, one time benefits from each of these resolution enhancement techniques (RET) have nearly exhausted. In this paper, we explore one important diffraction aspect of sub-wavelength lithography viz. the forbidden pitch phenomenon and its implication on future designs. We studied Forbidden pitches in context of 65 and 45 nm technologies using aerial imaging simulation. Aerial imaging simulation is computationally expensive and is not possible to perform on entire layout structures. Based on results from our simulations on selected patterns, we observe that in absence of any other resolution enhancement technique, many of the current layout patterns will be disallowed in 45 nm technology. Such restrictions significantly mitigate the benefit of migration to 45 nm technology in terms of area, power and performance of a design. We further show that even structured gate array based designs are not immune to this problem.  相似文献   

13.
Dip‐pen nanolithography (DPN) is a unique nanofabrication tool that can directly write a variety of molecular patterns on a surface with high resolution and excellent registration. Over the past 20 years, DPN has experienced a tremendous evolution in terms of applicable inks, a remarkable improvement in fabrication throughput, and the development of various derivative technologies. Among these developments, polymer pen lithography (PPL) is the most prominent one that provides a large‐scale, high‐throughput, low‐cost tool for nanofabrication, which significantly extends DPN and beyond. These developments not only expand the scope of the wide field of scanning probe lithography, but also enable DPN and PPL as general approaches for the fabrication or study of nanostructures and nanomaterials. In this review, a focused summary and historical perspective of the technological development of DPN and its derivatives, with a focus on PPL, in one timeline, are provided and future opportunities for technological exploration in this field are proposed.  相似文献   

14.
姜念云 《光电工程》1997,24(4):21-25
通过对接近式光刻中光通过掩模版后的近场衍射特性的计算机模拟分析和曝光实验,提出了一种新型的接近式衍射小曝光方法,适用于紫外和X射线的接近曝光技术条件下,实现缩小曝光,可使实现亚半微米线宽图形的曝光和使基掩模版制作更为容易;并且具有等量缩小和焦深大的特点。  相似文献   

15.
超材料是一类具有特殊性质、自然界中并不存在的人造材料。综述了单负超材料和左手超材料构型的研究进展和超材料在超分辨成像、电磁隐身和电磁吸波体等方面的应用。同时也对国内外主要超材料制备技术进行了分类和概述,包括电子束光刻、纳米压印技术和聚焦离子束技术等。最后对超材料的发展方向和应用方向进行了展望。  相似文献   

16.
Interferometric lithography (IL) is a powerful technique for the definition of large-area, nanometer-scale, periodically patterned structures. Patterns are recorded in a light-sensitive medium, such as a photoresist, that responds nonlinearly to the intensity distribution associated with the interference of two or more coherent beams of light. The photoresist patterns produced with IL are a platform for further fabrication of nanostructures and growth of functional materials and are building blocks for devices. This article provides a brief review of IL technologies and focuses on various applications for nanostructures and functional materials based on IL including directed self-assembly of colloidal nanoparticles, nanophotonics, semiconductor materials growth, and nanofluidic devices. Perspectives on future directions for IL and emerging applications in other fields are presented.  相似文献   

17.
自1959年集成电路发明以来,它已经对人类的生产和生活方式的很多方面产生了极其重大的影响。集成电路正以线宽每年缩小30%、集成规模增长1倍、芯片价格随之下降的惊人速度发展。光刻技术的发展始终是集成电路发展的决定因素。本文综述了深亚微米光刻和纳米光刻技术。在光学光刻部分,简要描述了光刻的历史演变,较详细综述了光学光刻的最新进展,如相移掩模、离轴照明及深紫外曝光。最后介绍了电子束曝光及X射线曝光的发展状况及SIM纳米加工的发展状况。  相似文献   

18.
张继成  唐永建  吴卫东 《材料导报》2006,20(Z2):40-43,46
聚焦离子束系统是微细加工和分析的主要技术之一,是一个完美的微米/纳米技术研究平台.简述了聚焦离子束系统的组成和主要功能,着重介绍了近年来该技术在离子束刻蚀、反应离子束刻蚀、离子束辅助沉积、离子注入、微区分析、掺杂和成像以及无掩膜曝光等微米/纳米加工领域的应用,并对未来的发展前景进行了简要分析.  相似文献   

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