(Fe0.5 Co0.5)73.5 Cu1 Mo3 Si13.5 B9合金高温磁性的研究

研究了460～580℃等温退火(30min)后纳米晶(Fe0.5 Co0.5)73.5 Cu1Mo3Si13.5B9合金高温软磁性能.结果表明,在Fe73.5Cu1Mo3Si13.5B9纳米晶合金中用Co取代部分Fe仍可形成双相纳米晶结构,并且可显著提高合金的高温特性.与Fe73.5Cu1Mo3Si13.5B9纳米晶软磁合金相比,其室温μi略有下降,但表征高温磁稳定性的居里温度明显提高,同时磁导率在高温下衰减变缓,从而拓宽了纳米晶软磁材料的高温使用范围.文中初步探讨了用Co取代部分Fe后使高温特性得到改善的机理.     

SiCp/Cu电子封装材料研究进展

详细介绍了SiCp/Cu电子封装材料的主要制备方法及应用情况,目前国内外SiC/Cu电子封装材料的主要制备方法有粉末冶金法、放电等离子烧结法、无压浸渗法、压力浸渗法和反应熔渗法,其中包覆粉末热压烧结法和压力浸渗法是目前研发应用较广泛的两种方法.分析了SiC与Cu之间的界面反应机理,并指明SiCp/Cu电子封装材料的制备要解决的主要问题就是在SiC与Cu之间设置界面阻挡层,进而详细阐述了SiCp/Cu电子封装材料主要界面改性方法及其调控效果,并指出目前应用最好的两种方法是物理气相沉积法和化学气相沉积法.     

La元素对ATO/Cu电接触材料润湿性及组织性能的影响

颗粒增强铜基复合材料由于其低成本、良好的导电性、导热性和力学性能而成为最有希望替代Ag基电接触材料的候选材料。然而增强相与铜基体之间的润湿性较差,降低了铜基电接触材料服役过程中的稳定性和可靠性,从而限制了其应用。采用锑掺杂的SnO_2(ATO)作为增强相,研究了La元素在不同温度下对Cu和ATO颗粒之间润湿性的影响。同时对La含量不同的铜基复合材料进行组织和性能分析。结果显示,La元素能够有效改善Cu/ATO体系润湿性。随着La元素的增加,材料硬度略有提升,而电导率下降。提高基体中La元素含量,铜基电接触材料的接触电阻降低。此外通过TEM观察发现,La能够与ATO结合生成一种新的化合物。清晰地揭示出,La元素对ATO/Cu电接触材料润湿性及组织性能具有重要影响。     

Ordering of the α-Fe(Si) Crystallization Phase in Annealed Fe_(73.5)Cu_1Mo_3Si_(13.5)B_9 Alloy

The ordering of the α-Fe(Si) crystallization phase in annealed Fe73.5Cu1Mo3Si13.5B9 alloy has been studied using XRD method. The α-Fe(Si) phase in Fe73.5Cu1Mo3Si13.5B9 alloy annealed at 460℃ for 1 h consists of the DO3-type ordered region with spherical shape and disordered region. The size of DO3 ordered region increases with the annealing temperature. When the annealing temperature is 560℃, the size of the ordered region in the α-Fe(Si) grain is 14.0nm,which is nearly as large as that of the α-Fe(Si) grain (14.2 nm) and the degree of order of the α-Fe(Si) phase is about 0.78. When Fe73.5Cu1 Mo3Si13.5B9 amorphous alloy is annealed at 520℃, with the increment of the annealing time, the shape of the DO3 ordered region in the α-Fe(Si) phase is spheroidal at the beginning of the annealing and becomes spherical and has asize of 12.8 nm when the annealing time is 60 min. In addition, the DO3 superlattice lines of the α-Fe(Si) phase will vanish if Fe73.5Cu1Mo3Si13.5 B9 amorphous alloy is annealed for 1 h at 750℃.     

Mo-Si-B系原位复合材料的研究

Mo-Si-B系原位复合材料是一族新型的高温结构材料,目前的研究主要集中在其中的α-Mo Mo3Si Mo 5SiB2(T2)、Mo 5Si3Bx(T1) Mo3Si Mo5SiB2(T2)和Mo5Si3Bx(T1) MoSi2 MoB 3个体系.详细介绍了Mo-Si-B系原位复合材料的研究进展及应用前景,并在此基础上提出了进一步研究的重点和方向.     

不同陶瓷颗粒增强Cu基复合材料的制备及导电性能

以纯铜为基体,以WC、AlN、TiN、MgB2等具有不同导电性能与密度的陶瓷颗粒为增强相,采用球磨-冷压-烧结工艺制备了WCp/Cu、AlNp/Cu、TiNp/Cu和MgB2p/Cu系列复合材料.研究了制备工艺的不同环节对铜基复合材料导电性能的影响,讨论了不同陶瓷颗粒增强铜基复合材料的导电性能.结果表明相同制备工艺及体积分数条件下,以具有不同导电性能与密度的陶瓷颗粒作为增强相的铜基复合材料的导电性能相近,球磨、冷压、烧结、复压及复烧等工艺环节对铜基复合材料导电性能有不同程度的影响,提高铜基复合材料的致密度为提高其导电性能的关键.     

C/Cu复合材料磨损特性研究

介绍了一种用作无润滑摩擦副的新材料-碳纤维增强铜基复合材料(简称C/Cu复合材料)在无润滑条件下的磨损特性.结果表明,该材料具有较低的磨损率,且磨损率服从正态分布.通过对大量实验数据进行回归分析和概率计算,得到在给定磨损率条件下C/Cu复合材料不同失效概率的曲线.     

叠层压铸法制备纳米碳纤维/铜基复合材料

在比较目前C/Cu复合材料主要制备工艺特点的基础上,采用叠层压铸法制备纳米碳纤维/铜基复合材料,初步探讨了温度、压力对材料相容性、显微组织和性能的影响.研究表明:在略高于铜熔点的温度及适当的压力下,可获得成型较好的纳米碳纤维/铜基复合材料,与不含纳米碳纤维的试样相比硬度值(Hv)提高约30%.实验中还观察到微量杂质硫以化合物Cu2S的形式在C/Cu复合体中聚集形成规则的富硫球状颗粒的现象.     

颗粒种类及制备工艺对铜基材料性能影响

以纯铜为基体,以WC、AlN、TiN、MgB2等具有不同导电性能与密度的陶瓷颗粒为增强相,采用粉末冶金工艺制备了WCp/Cu、AlNp/Cu、TiNp/Cu和MgB2p/Cu系列复合材料.研究了不同增强颗粒、制备工艺的不同环节对铜基复合材料导电性能的影响.结果表明:相同制备工艺及体积分数条件下,以具有不同导电性能与密度的陶瓷颗粒作为增强相的铜基复合材料的导电性能相近,混粉、压制、烧结、复压及复烧等工艺环节对铜基复合材料导电性能有不同程度的影响,提高铜基复合材料的致密度为提高其导电性能的关键.     

D型(钨铼)热电偶用补偿导线合金丝的研究

文章以Cu、Ni、Si为原料,通过真空感应熔炼、拉拔、热处理的方法制备了一种钨铼热电偶用补偿导线铜基合金丝。测试、分析了合金丝Ni/Si质量比、热电势及力学性能,并对合金组织、物相进行表征。结果表明:随Ni/Si质量比的增加,Cu(+)/Cu-Ni-Si(-)补偿导线合金丝热电势增高,且当Ni/Si质量比为13左右,100℃热电势值接近标准值1145μV;最终经成分优化制备出用于钨铼D型热电偶补偿导线Cu-Ni-Si合金丝。     

Relationships between the properties and microstructure of Mo–Cu composites prepared by infiltrating copper into flame-sprayed porous Mo skeleton

In this paper, the porous Mo skeleton was fabricated through deposition of semi-molten Mo particles by flame spraying. The Mo–Cu composites with different Cu contents up to 68% were produced by infiltrating molten copper into porous Mo skeleton in vacuum. The microstructures of both the as-sprayed porous Mo skeletons and the as-infiltrated Mo–Cu composites were characterized. The physical and mechanical properties of Mo–Cu composite materials with different Mo constituents were investigated. The results indicate that the excellent connecting pore structure feature of sprayed Mo skeleton is beneficial to the copper infiltration and the resultant Mo–Cu composite materials exhibit high density and microhardness. Moreover, there exists a hardness gradient at the interface region between the large Mo particle and Cu matrix. The results showed that the coefficient of thermal expansion (CTE) and thermal conductivity (TC) of Mo–Cu composites increase with the copper content of the composites and the temperature. The TC data of the composites are close to the results calculated by the finite differential method by taking account of the interface structure. Moreover, the observed CTEs are in good agreement with the theoretical values calculated based on Kerner's model.     

Investigation of thermal stability of Mo thin-films as the buffer layer and various Cu metallization as interconnection materials for thin film transistor-liquid crystal display applications

Cu/Mo/Si multi-layer structures were fabricated to investigate diffusion behaviors and thermal stability between Cu and Mo. Physical vapor deposition (PVD), chemical vapor deposition, electroplating and electrolessplating were used to grow 100 nm thick Cu films as interconnection materials, and radio-frequency sputtering system was introduced to grow 37.5 nm thick Mo films as a buffer layer. All Cu/Mo/Si multi-layer specimens were annealed at 350 to 700 °C for 30 min. When the annealing temperature was over 600 °C, the Cu diffused through Mo into Si, and the Cu₃Si phase and Mo-Si intermetallic compounds formed at the Mo/Si interface. The diffusion mechanism is the grain boundary diffusion. The results indicate that Cu film deposited by PVD had best crystallinity, lower roughness, large adhesive energy and resistivity. The values of the resistivity, diffusion activity energy and large adhesive energy are 5.47 μΩ-cm, 0.948 eV and 2.46 N/m, respectively.     

新型硅基铝金属高性能电子封装复合材料研究

微电子集成技术的快速发展对封装材料提出了更高的要求.在传统封装材料已不能满足现代技术发展需要的情况下,新型硅基铝金属复合材料脱颖而出,以其优异的综合性能成为备受关注的焦点.高体积分数硅基体带来的低热膨胀系数能很好地与芯片相匹配,连通分布的金属(铝)确保了复合材料的高导热、散热性,两者的低密度又保证了复合材料的轻质,尤其适用于高新技术领域.重点探讨了硅基铝金属铝复合材料的主要制备技术及其组织性能机理,并对其未来发展作出展望.     

Diffusion barrier performances of thin Mo, Mo-N and Mo/Mo-N films between Cu and Si

In this work, we have studied the diffusion barrier performances of Mo, Mo-N and Mo/Mo-N metallization layers deposited by sputtering Mo in Ar/N₂ atmospheres, respectively. Samples were subsequently annealed at different temperatures ranging from 400 to 800 °C in vacuum condition. The film properties and their suitability as diffusion barriers and protective coatings in silicon devices were characterized using four-point probe measurement, X-ray diffractometry, scanning electron microscopy, Auger electron spectroscopy and transmission electron microscopy analyses. Experimental results revealed that the Mo (20 nm)/Mo-N (30 nm) layer was able to prevent the diffusion reaction between Cu and Si substrate after being annealed at 600 °C for 30 min. The adhesion between layers and the content of N atoms are the key parameters to improve the properties of Mo-based barrier materials. The Mo layer interposed between Cu and Mo-N diluted the high nitrogen concentration of the barrier and so enhanced the barrier performances.     

Building metallurgical bonding interfaces in an immiscible Mo/Cu system by irradiation damage alloying (IDA)

For the immiscible Mo/Cu system with a positive heat of mixing(△H_m 0), building metallurgical bonding interfaces directly between immiscible Mo and Cu and preparing Mo/Cu laminar metal matrix composites(LMMCs) are very difficult. To solve the problem, a new alloying method for immiscible systems, which is named as irradiation damage alloying(IDA), is presented in this paper. The IDA primarily consists of three steps. Firstly, Mo is damaged by irradiation with multi-energy(186, 62 keV) Cu ion beams at a dose of 2 × 10~(17) ions/cm~2. Secondly, Cu layers are superimposed on the surfaces of the irradiation-damaged Mo to obtain Mo/Cu laminated specimens. Thirdly, the irradiation damage induces the diffusion alloying between Mo and Cu when the laminated specimens are annealed at 950℃ in a protective atmosphere.Through IDA, Mo/Cu LMMCs are prepared in this paper. The tensile tests carried out for the Mo/Cu LMMCs specimens show that the Mo/Cu interfaces constructed via IDA have high normal and shear strengths.Additionally, the microstructure of the Mo/Cu interface is characterized by High Resolution Transmission Electron Microscopy(HRTEM), X-ray diffraction(XRD) and Energy Dispersive X-ray(EDX) attached in HRTEM. The microscopic characterization results show that the expectant diffusion between Mo and Cu occurs through the irradiation damage during the process of IDA. Thus a Mo/Cu metallurgical bonding interface successfully forms. Moreover, the microscopic test results show that the Mo/Cu metallurgical interface is mainly constituted of crystalline phases with twisted and tangled lattices, and amorphous phase is not observed. Finally, based on the positron annihilation spectroscopy(PAS) and HRTEM results,the diffusion mechanism of IDA is discussed and determined to be vacancy assisted diffusion.     

Consolidation of Nano-Composites for Thermal Management

This paper describes the consolidation of ultra fine (“nano”) grained W-Cu and Mo-Cu composite materials used as thermal management substrates in microelectronics applications. Both W/Cu and Mo/Cu composites having W and Mo dispersed phases in the size range of 300-700 nm and excellent microstructural homogeneity were synthesized by chemical precursor techniques. Consolidation to high densities (96 - 99% of theoretical) was accomplished by the standard commercial practice of cold pressing followed by pressureless sintering and also by rapid consolidation at high pressures. The high pressure short duration consolidation techniques allowed the benefits of nano-powders to be preserved by minimizing grain growth during consolidation. The use of these methods provides alternatives to the costly and tedious techniques of infiltration of a refractory metal skeleton or powder mixing. Both of the latter approaches are subject to local inhomogeneities and variations in thermal properties. Thermal conductivity and thermal expansion values of 220 W/mK (extrapolated from 86% to 100% density) and 10.5 ppm/°C for90W/10Cu (by weight) and 141 W7 mK and 10.4 ppmTC respectively for 90Mo/10Cu (by weight) compositions, were obtained at room temperature. Characterization was accomplished by X-ray diffraction and scanning electron microscopy (SEM) supplemented by energy dispersive spectroscopy (EDAX/ EDS)     

氮氧化硅材料的研究进展

综述了近几年氮氧化硅复合材料、氮氧化硅薄膜材料和介孔氮氧化硅材料的研究与发展现状。着重介绍了氮氧化硅薄膜材料的发光特性和折射率可调特性,及其不同的制备方法。同时介绍了介孔氮氧化硅材料和Si_3N_4/Si_2N_2O、SiC/Si_2N_2O及BN/SiNOf三种应用较多的氮氧化硅复合材料的研究现状。并对氮氧化硅材料的研究与应用进行了展望。     

Cu层和Mo层对NiFe多层膜巨磁电阻（GMR）的影响

采用磁控溅射方法制备了ＮｉＦｅ／Ｃｕ和ＮｉＦｅ／Ｍｏ两个系列的多层膜，进行了结构，磁性和磁电阻测量，并对部分ＮｉＦｅ／Ｃｕ多层膜样品作了电镜分析，对于ＮｉＦｅ／Ｃｕ多层膜，在室温下的测量到巨磁电阻随Ｃｕ层厚度振荡的第一，二三峰。在ＮｉＦｅ／Ｍｏ多层膜样品中未发现巨磁电阻效应，讨论了非磁性 多层膜的磁性，界面结构和巨磁电阻效应。     

几种无限供应的金属/硅体系离子束混合相变

研究了五种无限供应的 Bilayer 膜金属/硅体系中(Ni/Si,Cu/Si,Nb/Si,Mo/Si,Ti/Si),因离子束注入引起的界面原子交混及相变过程。界面温度和注入离子剂量显著影响薄膜相变,在生成各种金属 Si 化物及固溶体时,反应温度和生长激活能大大降低,相变动力学过程与热退火反应不尽相同,诱导离子和基体取向对成相生长也有影响。讨论了相应微观机理。     

钼铜扩散焊接接头界面显微组织

采用扩散焊接方法对钼铜异种材料进行了焊接,研究了直接焊接和加镍作为中间层焊接对焊接接头界面显微组织的影响,通过SEM、EDS、EPMA、XRD等测试方法对其显微结构进行了表征.结果表明,直接焊接时,焊接界面结合紧密,Mo、Cu原子之间相互扩散形成扩散层,接头断裂发生在扩散层,由于柯肯达尔效应作用,在铜侧形成少量孔洞,孔洞的存在使焊接接头性能降低;加镍中间层焊接时,接头抗拉强度高于直接焊接时抗拉强度,Mo/Ni和Ni/Cu界面结合紧密,Mo/Ni界面形成固溶体层,接头断裂发生在Mo/Ni界面处,断口呈典型的脆性断裂特征.