络合剂对化学水浴沉积 ZnS薄膜的影响

采用不同络合剂化学水浴沉积ZnS薄膜,应用台阶仪、SEM、XRD、波谱仪等手段测定了ZnS薄膜的厚度、表面、物相结构及透过率等.结果表明,氨水体系沉积薄膜速度明显慢于另外两种体系,沉积的ZnS薄膜都为立方结构.柠檬酸钠体系沉积的ZnS 薄膜结晶和透过率最佳,但薄膜表面缺陷较多;氨水-联氨体系沉积的ZnS薄膜表面质量最佳,结晶和透过率也较好;氨水体系沉积的ZnS薄膜质量较差.用3种体系沉积的ZnS薄膜用于制备铜铟镓硒Cu(In,Ga)Se2太阳电池,氨水和氨水-联氨体系沉积的ZnS薄膜制备的电池转换效率明显高于柠檬酸钠体系沉积的ZnS制备的太阳电池.     

络合沉淀法合成纳米氧化铜粉体及其性能表征

以Cu(NO3)2为原料,采用络合沉淀法合成了纳米级CuO粉体,并对产品结构性能进行了表征。探讨了氨水、柠檬酸、乙二胺三种不同络合剂对粉体粒径的影响,三种络合剂得到粉体平均粒径在40－60nm之间,粉体的粒径随着络和物稳定性的增加而增大。获得了以氨水为络合剂制备纳米氧化铜粉体的最佳工艺条件,以氨水为络合剂所得CuO粉体平均粒径40nm,分散性好、收率高。     

化学沉积参数对CdS薄膜前驱物利用率的影响

采用化学水浴法,在醋酸镉、硫脲、氨水、醋酸铵的体系中制备CdS薄膜,设计L2556正交实验,研究了各沉积参数对前驱物利用率的影响.结果表明,随前驱物醋酸镉、硫脲各自浓度的增加,其自身的利用率下降,但另一方的利用率上升.前驱物的利用率随络合剂醋酸铵浓度的增加先增大后减小,随氨水浓度的增加先减小后增大;其利用率随反应条件温...     

化学水浴法制备ZnS薄膜光学性能

利用薄膜分析系统测量不同沉积时间制备的ZnS薄膜透射谱,通过分析薄膜透射谱,来确定ZnS薄膜光学常数和禁带宽度.实验结果表明,在线性生长阶段,薄膜的沉积速率大约为1 nm/min,具有很好的线性关系,沉积0.5 h的ZnS薄膜在可见光范围内光透过率为82%左右.     

衬底温度对柔性硫化锌薄膜结构与光学性能的影响北大核心CSCD

本文利用射频磁控溅射薄膜沉积技术在柔性聚酰亚胺(PI)、氧化铟锡(ITO)玻璃及石英玻璃衬底上制备了透明硫化锌(ZnS)薄膜。通过改变生长过程中的衬底温度,全面系统地研究了衬底温度对柔性和刚性ZnS薄膜的晶体结构、光透过率、光学常数以及表面性能影响的规律。研究表明升高衬底温度有利于形成ZnS薄膜(111)晶面的择优取向生长。不同衬底温度条件下制备的柔性和刚性ZnS薄膜在可见光波长范围内的平均光透过率均大于80%;在红外波长范围的平均光透过率达到85%。柔性ZnS薄膜在400 nm-890 nm波长范围内的光学折射率为2.21-2.56。刚性ZnS薄膜的光学折射率随着衬底温度的升高有所增加,当衬底温度为300℃时,刚性ZnS薄膜在890 nm波长处的折射率达到2.26。柔性ZnS薄膜厚度及表面粗糙度均随着衬底温度的升高而降低,当衬底温度为300℃时,柔性ZnS薄膜表面均方根粗糙度达到最小值2.99 nm。为实现高性能柔性ZnS光电器件,应控制生长柔性ZnS薄膜的衬底温度在200℃-300℃,以获得最优化的器件性能。     

柠檬酸浓度对电沉积制备CuInSe2薄膜的影响

采用Mo/钠钙玻璃衬底作研究电极,饱和甘汞电极(SCE)作参比电极,铂网电极作辅助电极的三电极体系,利用电沉积技术在镀钼的钠钙玻璃衬底上制备CuInSe2薄膜,研究络合剂柠檬酸浓度对CuInSe2薄膜制备的影响.利用EDS、xRD和SEM对制备的CuInSe2薄膜进行表征,结果表明:当柠檬酸的浓度为0.5mol/I时,可以制备致密性好、晶粒分布均匀、组分接近化学计量比的黄铜矿结构的CuInSe2薄膜.     

ZnS：Ag^＋AC TFEL器件的制备及发光特性研究

通过对ZnS:Ag^ 薄膜电致发光（TFEL）器件的光学性质的研究，探讨了能获得稳定兰色发光的TFEL器件的制备及有利于ZnS:Ag^ 兰色发光的实验条件，同时讨论了光的干涉对ZnS:Ag^ TFEL光谱的影响，在实验中得到的ZnS:Ag^ TFEL光谱是包含几个隆起的宽带，通过计算证明这些隆起的出现与光的干涉有关。Ag^ 的浓度对ZnS:Ag^ TFEL器件的发光亮度和稳定性有显著的影响，Ag^ 浓度约为0.03mol%时，器件亮度较高，稳定性也较好，浓度再大时，亮度和稳定性较低，较高的电压有利于ZnS:Ag^ 兰色发光的提高，激发频率也存在一个最佳值。     

铜纳米粒子的可控制备及其抗菌性能研究

以氯化铜为铜源,水合肼为还原剂,十六烷基三甲基溴化铵(CTAB)为稳定剂,氨水为络合剂,通过液相还原法合成了纳米铜粉。通过改变还原剂浓度制备了4组不同粒径纳米铜粉末,FESEM等表征发现,随着水合肼浓度的降低,纳米铜粉粒径增加。通过肉汤稀释振荡培养法测试纳米铜的最小抑菌浓度,结果表明,随着纳米铜粒径的增加,抗菌性能降低,所合成纳米铜的最小抑菌浓度在750～3000mg/L;初步分析认为铜纳米粒子主要是通过水解或电离出铜离子而发挥抗菌作用。     

化学水浴中氨浓度对沉积ZnS薄膜的影响

用化学水浴法在玻璃衬底上沉积ZnS薄膜。采用XRD、SEM、nkd-薄膜分析系统对薄膜的形貌、结构和光学性能进行了分析，结果表明：当氨浓度〈1．50mol／L，可获得白点较少、平整性较好的非晶ZnS薄膜，在红移方向上很长的波段内透过率较好，可达95％以上，禁带宽度为3．81eV，折射率随波长的增加而减小，从2．32变化到1．92。有关化学水浴ZnS薄膜折射率的报道极少；当氨浓度〉1．50mol／L时，薄膜白点增多，易龟裂和剥落，结构是立方闪锌矿。     

纳米WO3薄膜的制备及其光学性能研究

以钨酸钠为原料，采用溶胶技术结合浸渍镀膜方法制备出WO3薄膜，利用透射电子显微镜、紫外-可见分光光度计、X射线衍射仪对薄膜的性质进行了研究。实验结果表明：草酸浓度的大小对产物粒径和紫外-可见透过光谱特性均有影响，随着草酸浓度的增大，产物的粒径减小，在可见光附近的透过率增大。热处理温度对产物的光透过性有影响，处理温度越高，光透过率越大。     

Effect of complexing agent on the chemically deposited ZnS thin film

Zinc sulfide (ZnS) thin films have been deposited onto fluorine doped tin oxide and microscopic glass substrates from an aqueous alkaline reaction by chemical bath deposition. The effect of concentrations of hydrazine hydrate (HyH) (complexing agent) on the deposit is studied. X-ray analysis confirm the growth of nanocrystalline ZnS thin films with reflections (111), (220) and (311) correspond to cubic crystalline phase. TEM results support the growth of cubic ZnS layers. The energy band gap was successfully tailored from 2.77 to 3.80 eV. Photoluminescence study indicates a strong band-edge emission with some defect like vacancies. It was also noticed that HyH plays an important role on the nucleation. The remarkable improvement in the growth rate of ZnS thin films have been observed upon increasing the contents of HyH. Nearly stoichiometric ZnS layer was obtained upon annealing prepared with 2.5 M HyH. The crystallinity was found to be increased upon annealing the layers. The ideality factor for the ZnS layers prepared with 0 and 1.0 M HyH were obtained?~1.71 and 1.24, respectively. The capacitance–voltage plots behave according to Schottky–Mott theory. The doping concentrations?~10¹⁷ and 10¹⁸ cm^?3 were calculated for the layers deposited with 0 and 1.0 M HyH, respectively.     

A primary study of simultaneous leaching of silver containing manganese ore and a sphalerite concentrate

It is demonstrated that a low grade, silver containing manganese deposit can be exploited by reaction with a ZnS concentrate. In the process Mn(IV) is reduced to Mn(II) and the ZnS converted to ZnSO4. In the process Mn and Zn are solubilized. By studying the effects of quantity of reducing agent and sulfuric acid added and of time, temperature and liquid-to-solid ratio on the leaching process, the optimum technological conditions have been achieved under which the amount of manganese leached was 98%. The silver can be removed from remaining solids by adding ammonia liquor. By then adding hydrazine hydrate, sponge silver with purity up to 99% can be obtained with a recovery of 87%.     

Band gap engineering in PbSe thin films from near-infrared to visible region by photochemical deposition method

Lead selenide (PbSe) thin films have been synthesized by the established photochemical deposition technique using lead nitrate and lead acetate as sources for the metal ions and sodium seleno sulphate as the selenium source along with triethanolamine, ammonia and hydrazine hydrate as complexing agents. A comprehensive study of the effect of substrate materials on physical properties of as deposited PbSe thin films is reported in this work. Two substrates were used in this investigation, namely soda lime glass slides and gold coin corning glass slides. The solution is irradiated with UV light and the photochemical reactions in the aqueous solution resulted in highly adherent metallic thin films. X-ray diffraction (XRD), scanning electron microscopy, optical and electrical measurement techniques were used for film characterization. The XRD analysis confirmed that all films were cubic, regardless of the cationic precursors and substrates used. The scanning electron microscope micrographs showed variations in morphology. The optical studies revealed that the films have good absorption in the visible region. The remarkable success of our effort was that we have been able to modify optical band gap of PbSe thin films over a wide spectral range by a cost effective route. The band gaps estimated from the transmission spectra were in the range 1.32–1.40 eV for films deposited on soda lime glass substrates and 1.46–1.55 eV for corning glass substrates. The room temperature conductivity of the PbSe films were in the range of 3.71 × 10^?7–513 × 10^?7 (Ω cm)^?1. The as deposited PbSe thin films with low transmittance in the visible region coupled with an appreciable reflectance in infrared region were found to satisfy the basic requirements for solar control coatings for window glazing applications in warm climates. Through this work we established that irrespective of metal salts, soda lime glass substrate was superior to corning glass substrate.     

Preparation and characterization of ZnS thin films by the chemical bath deposition method

ZnS thin films prepared on quartz substrates by the chemical bath deposition (CBD) method with three type temperature profile processes have been investigated by X-ray diffraction, scanning electron microscope, energy dispersive X-ray analysis and light transmission. One is a 1-step growth process, and the other is 2-steps growth and self-catalyst growth processes. The surface morphology of CBD-ZnS thin films prepared by the CBD method with the self-catalyst growth process is flat and smooth compared with that prepared by the 1-step and 2-steps growth processes. The self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement in crystallinity of ZnS thin films prepared by CBD. ZnS thin films prepared by CBD method with self-catalyst growth process can be expected for improvement in the conversion efficiency of Cu(InGa)Se₂-based thin film solar cells by using it for the buffer layer.     

温度对化学水浴法制备ZnS薄膜的影响

采用化学水浴法在玻璃上制备了太阳能电池中的ZnS缓冲层。采用SEM、EDS、XRD和nkd-分光光度计等手段研究了水浴温度对ZnS薄膜的表面形貌、结构和光学性能的影响。结果表明,升高温度不能明显改变薄膜的结晶性、形貌和沉积生长方式,能否成膜与温度的关系也不大,但成膜速率对温度的依赖性较大。随温度的升高,薄膜的透过率先减小后增大,反射率则先增大后减小。对同一试样而言,透过率和反射率对应较好。当温度为70℃时,可制得禁带宽度为3.83eV、符合化学计量比、平整的非晶ZnS薄膜。     

Highly oriented ZnS nanorod arrays with controlled diameters: solvothermal synthesis, size-dependent band-edge emission and photocatalytic properties

High quality ZnS nanorod arrays with controlled diameters were directly grown on Zn substrate via a facile solvothermal reaction of metallic Zn with thiourea in hydrazine hydrate at 180 degrees C. The control over the diameters of the nanorods was achieved by adjusting the reaction time. The as-prepared ZnS nanorods were single-crystalline with a hexagonal wurtzite structure and grown along the [0001] direction. The role of hydrazine hydrate in the formation of ZnS nanorod arrays was investigated, and a possible mechanism was also proposed. The photoluminescence and photocatalytic activities of the as prepared ZnS nanorod arrays were studied. It was found that the ZnS nanorod arrays exhibit the size-dependent band edge emission and photocatalytic activities in the degradation of acid scarlet, and have potential applications in the fields of nanolaser and other photoelectronic devices as well as pollutant treatment.     

Characterization of photoactive polymer thin films using transmission spectrum

There are many different methods applied to obtain the optical constants of thin films using transmission spectrum, none of them applied to photoactive polymer thin films. The aim of this work is to find the suitable method for routine measurements of photoactive polymer thin films. In order to achieve this goal, different methods are applied to simulated thin films of known optical constants to compare their accuracies, hence choosing the most suitable method for studying the photoactive polymer thin films. It is found that the fitting methods are not suitable for photoactive polymer thin films while numerical solution of two independent transmission measurements is suitable for such films, so poly methy1 methacrylate (PMMA) films doped with different concentrations of photoactive unit Disperse Red 1 (DSR1) are characterized using this method. The refractive index of PMMA doped with 0.2% of DSR1 (1 g PMMA, 2 mg DSR1) is found to be 1.534 with error 0.656% at λ = 630 nm. It is also found that the refractive index of photoactive polymer thin films increases linearly with increasing photoactive unit up to concentration 0.25%.     

NiO层作为空穴传输层的钙钛矿太阳能电池的制备和性能研究

有机-无机杂化钙钛矿太阳能电池因具有光吸收强、载流子扩散长度长等优点,近年来在光伏领域吸引了广泛的关注,其中,无机NiO薄膜在电池结构中作为空穴传输层已发展成为钙钛矿电池研究的重要方向。采用溶液旋涂法制备了NiO薄膜,系统优化了不同烧结温度和不同浓度条件下NiO薄膜对钙钛矿电池性能的影响。采用扫描电镜、X射线衍射、紫外-可见分光光度计、电流-电压测试、光量子效率等方法分别观察和分析了NiO薄膜以及相应电池的光电性能。结果表明:溶液旋涂法制备的NiO薄膜具有良好的覆盖性、非常低的表面粗糙度,当制备NiO的预制溶液浓度为0.05mol/L,NiO的烧结温度为500℃时,获得了最优的电池性能,最高电池转换效率为14.62%。     

Solvothermal synthesis of uniform hexagonal-phase ZnS nanorods using a single-source molecular precursor

Pure and uniform hexagonal-phase ZnS nanorods with quantum confinement effect were synthesized by solvothermal decomposition of an air-stable, easily obtained single-source molecular precursor (zinc diethyldithiocarbamate, Zn-(DDTC)₂) in hydrazine hydrate aqueous solutions at 150–200 °C, and characterized by powder X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and UV–vis absorption spectra. The possible formation mechanism of one-dimensional ZnS nanostructure in the present system was also briefly discussed.     

Structural,optical and microscopic properties of chemically deposited In<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin films

Solar cell technologically important binary indium selenide thin film has been developed by relatively simple chemical method. The reaction between indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium at room temperature gives deposits In₂Se₃ thin film. Various preparative parameters are discussed. The as grown films were found to be transparent, uniform, well adherent, red in color. The prepared films were studied using X-ray diffraction, scanning electron microscopy, atomic absorption spectroscopy, Energy dispersive atomic X-ray diffraction, optical absorption and electrical conductivity properties. The direct optical band gap value E_g for the films was found to be as the order of 2.35 eV at room temperature and having specific electrical conductivity of the order of 10⁻² (Ω cm)⁻¹ showing n-type conduction mechanism. The utility of the adapted technique is discussed from the point of view of applications considering the optoelectric and structural data obtained.