柠檬酸-硝酸盐燃烧法制备Ba0.5Sr0.5TiO3介电材料

以硝酸钡、硝酸锶，钛酸四丁脂以及氨水为原料，利用柠檬酸-硝酸盐燃烧法制备了Ba0.5Sr0.5TiO3(BST)超细粉末．详细研究了pH值、分散剂对形成BST粉末粒度的影响．用所合成的粉末压片，1300℃烧结2h即可获得致密烧结体，烧结样品的平均粒径约为1μm．在10kHz，25℃下的介电性能为：介电常数1470，介电损耗0．006．     

掺La3+对0.94(Na1/2Bi1/2)TiO3-0.06BaTiO3陶瓷介电行为和压电性能的影响

对(Bi1／2Na1／2)TiO3-BaTiO3压电陶瓷在准同型相界处的组成掺入不同量的La^3 ，研究掺杂对于体系结构、压电与介电性能的影响．结果表明，掺杂使得体系的弛豫铁电体特征更为明显，相变的弥散程度增大，室温下的介电常数增大；当掺杂量低于1．5％时，材料的d33值增大，但同时介电损耗也相对于基体有所增加．当掺杂量达到3％以后，陶瓷的压电性能严重降低．     

水基溶胶-凝胶法制备Ba0.5Sr0.5TiO3薄膜及其介电性能研究

本文研究了一种以水为溶剂的Ba0．5Sr0.5TiO3（BST）液体源溶液，并用Sol－Gel技术制备出BST薄膜，实验中，对水基BST液体源浓缩凝胶进行了DTA／TGA分析，XRD谱分析显示，BST膜呈现纯钙钛矿相结构．从SEM电镜照片可以看到，BST薄膜厚度均匀一致，650℃热处理20min后，晶粒大小为200nm左右．性能测试结果表明，介电性能与膜厚有关，厚度为1250的BST薄膜具有较优良的介电性能，当测试频率为1kHz时，介电常数为330，介电损耗为0.043左右．     

V2O5对 BaTiO3-Y2O3-MgO陶瓷性能的影响

研究了V2O5掺杂BaTiO3-Y2O3-MgO系陶瓷的显微结构和介电性能．SEM显示V2O5会促进该体系晶粒生长，降低陶瓷致密度．XRD显示V掺杂样品均为单一赝立方相，其固溶度〉1．0m01％．研究表明，V离子能有效抑制掺杂离子Y、Mg向BaTiO3晶粒内扩散，改变掺杂离子在晶粒中分布，从而形成薄壳层的壳芯晶粒，因此V能提高居里峰的强度并改善电容温度稳定性．多价V离子在还原气氛中以＋3、＋4为主，能增强瓷料的抗还原性，提高绝缘电阻率（10^13Ω·cm）、降低介电损耗（0．63％）．该体系掺杂0．1mol％V时，介电常数达到2600，满足X8R标准．     

丝网印刷B-Li玻璃掺杂Ba0.5Sr0.5TiO3厚膜介电性能研究

钛酸锶钡(BST)陶瓷材料在外置偏压直流电场作用下,具有高的介电可调性,可以广泛地应用于电可调陶瓷电容器以及无源可调微波器件的设计与开发.通过B-Li玻璃的有效掺杂,实现BST陶瓷材料与Ag、Cu贱金属电极材料的低温友好烧结,是发展混合集成厚膜电路的技术要求.主要采用丝网印刷工艺,在Al2O3陶瓷衬底上,制备了B-Li玻璃掺杂的Ba0.5Sr0.5TiO3厚膜材料,并对其最佳烧结温度、物相结构、显微形貌以及介电性能进行了研究.结果表明,B-Li玻璃掺杂的Ba0.5Sr0.5TiO3厚膜材料在950℃可以实现低温烧结,得到了厚度为20μm的均匀致密厚膜材料;相比于BST陶瓷块体材料,5%(质量分数)B-Li玻璃掺杂BST厚膜的居里峰发生了明显的弥散和宽化,介电常数显著降低;在室温和10kHz频率下,其介电常数为210,介电损耗为0.0037,介电可调性可达15%以上,可以适用于厚膜混合集成电路与可调器件的设计和开发.     

Al2O3掺杂对Ba4Sm9.33Ti18O54陶瓷显微结构和介电性能的影响

采用固相反应法制备了Ba4Sm9.33Ti18O54(简称BST)xwt%Al2O3(x=0~1.5)微波介质陶瓷.研究了掺杂Al2O3对BST陶瓷的显微结构和介电性能的影响.扫描电镜和能谱分析结果显示:未掺杂的BST陶瓷中有少量Sm2Ti2O7相,随着增加Al2O3掺入量,Sm2Ti2O7相消失,BST陶瓷中先后产生了BaTi4O9(x≥0.6)和BaAl2Ti5O14(x≥1.0)两种新相.介电性能测试结果表明Sm2Ti2O7相的消失以及少量BaTi4O9相的形成,能显著提高BST陶瓷的Qf值,但会降低陶瓷的介电常数.当Al2O3的掺入量从0.6wt%增加到1.0wt%时,BaTi4O9相的量逐渐增加,引起BST陶瓷的Qf值略微下降.BaAl2Ti5O14相的产生会同时降低BST陶瓷的介电常数和Qf值.掺入0.6wt%Al2O3的BST陶瓷在1340℃烧结3 h后具有最佳的介电性能:εr=74.7,Qf=10980 GHz,τf=–11.8×10-6/℃.     

BSTO/Mg2SiO4/MgO复合材料的介电性能研究

采用传统的电子陶瓷制备工艺制备了BSTO／Mg2SiO4／MgO复合材料，并对样品的结构及其介电性能进行了表征与分析，讨论了Mg2SiO4／MgO掺杂对BSTO／Mg2SiO4／MgO复合材料结构和性能的影响．结果表明，与前其他掺杂改性的BSTO复合材料相比，BSTO／Mg2SiO4／MgO复合材料不仅可以在较低的温度烧结致密，而且在介电常数降低的同时，仍能保持较高的可调性，如BSTO／39wt％Mg2SiO4／17wt％MgO的介电常数εr为-80．21，在2kV／mm的直流偏置电场下，其可调性达到-12％，介电损耗为-0．003．     

（Ba0.6Sr0．4）Ti1-xZnxO3薄膜的介电调谐性能

利用溶胶-凝胶法在Pt／TiO2/SiO2/Si衬底上制备了（Ba0．6Sr0．4）Ti1-xZnxO3（BSTZ）薄膜,用X射线衍射和扫描电镜分析测定了BSTZ的微结构和薄膜的表面形貌,研究Zn掺杂量对其介电调谐性能的影响,结果表明,随Zn含量的增加BSTZ物相无明显变化,其介电常数、调谐量先增加后降低,但介电损耗却先降低后增加。在室温1MHz下,1．5m01％Zn掺杂BSTZ薄膜有最大的调谐量54．26％;2．5mol％Zn掺杂BSTZ薄膜有最低的介电损耗0．0148和最大的优值因子30．3。     

Y3+共掺杂对掺 Er3+: Al2O3粉末光致发光的增强作用

采用非水性溶胶-凝胶法制备了Y^3＋共掺杂的掺Er^3＋：Al2O3粉末，Er^3＋浓度为0．1和1．0mol％，Er^3＋和Y^3＋浓度比为1：0-10．X射线衍射和光致发光（PL）光谱结果表明：900℃烧结的掺0．1和1．0mol％Er^3＋：Al2O3粉末为具有非晶化特征的γ和θ混合相结构，非晶化趋势随Y^3＋共掺杂浓度增大而增加．掺0．1mol％Er^3＋：Al2O3粉末，PL光谱强度和半高宽随掺Y^3＋浓度增大无明显变化．掺1．0mol％Er^3＋：Al2O3粉末，PL光谱强度和半高宽随掺Y^3＋浓度增大而增加，10mol％Y^3＋共掺杂粉末的发光强度提高50倍，约为掺0．1m01％Er^3＋：Al2O3粉末的10倍，半高宽从77nm增至92nm．Y^3＋共掺杂对较高浓度掺Er^3＋：Al2O3粉末PL性能的增强作用归因于Y^3＋对Er^3＋在基体中的分散和配位结构多样性的提高．     

Mn掺杂BST陶瓷的本征热释电性能研究

采用柠檬酸溶胶-凝胶法制备了不同锰掺杂含量的BST陶瓷。研究表明,利用柠檬酸溶胶-凝胶法制备BST陶瓷粉末可以降低BST陶瓷的烧结温度至1250℃,Mn掺杂能明显降低BST陶瓷的铁电性,适量掺杂Mn可以获得具有介电常数适中、介电损耗较小,且室温下具有良好热释电性和探测率优值的BST陶瓷。1%Mn掺杂的BST陶瓷在室温下本征热释电系数γint=610nC/(cm2.K),低频下的探测率优值Fd=88.4×10-6Pa-1/2,可以满足制作热释电探测器的要求。讨论了Mn掺杂BST陶瓷的电畴翻转机制     

Magnetoelectric and dielectric properties of Ni0.5Cu0.5Fe2O4–Ba0.5Pb0.5Ti0.5Zr0.5O3 ME composites

The (x) Ni_0.5Cu_0.5Fe₂O₄ + (1−x) Ba_0.5Pb_0.5Ti_0.5Zr_0.5O₃ ME composites have been synthesized by a standard ceramic method. The presence of single phase in x = 0 and x = 1 as well as two phases in x = 0.15, 0.30 and 0.45 composites has been confirmed by XRD. The dielectric constant (ε′) and dielectric loss (tan δ) have been studied as a function of temperature and frequency. These composite materials exhibit maximum dielectric constant with a variation of frequency and temperature. The composite 15% Ni_0.5Cu_0.5Fe₂O₄ + 85% Ba_0.5Pb_0.5Ti_0.5Zr_0.5O₃ had the highest magnetoelectric voltage coefficient of 0.248 mV/cm Oe at room temperature among the studied composites.     

The synthesis of lead-free ferroelectric Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3 thin films by sol-gel method

(1 − x)Bi_0.5Na_0.5TiO₃-xBi_0.5K_0.5TiO₃ [BNT-BKT-100x] thin films have been successfully deposited on Pt/Ti/SiO₂/Si substrates by a sol-gel process together with rapid thermal annealing. A morphotropic phase boundary (MPB) between Bi_0.5Na_0.5TiO₃ and Bi_0.5K_0.5TiO₃ was determined around x ∼ 0.15. Near the MPB, the film exhibits the largest grain size, the highest ε value (360) and the largest P_r value (13.8 μC/cm²). The BNT-BKT thin film system is expected to be a new and promising candidate for lead-free piezoelectric applications.     

Dark-red-emitting CdTe0.5Se0.5/Cd0.5Zn0.5S quantum dots: Effect of chemicals on properties

CdTe_0.5Se_0.5/Cd_0.5Zn_0.5S core/shell quantum dots (QDs) with a tunable photoluminescence (PL) range from yellow to dark red (up to a PL peak wavelength of 683 nm) were fabricated using various reaction systems. The core/shell QDs created in the reaction solution of trioctylamine (TOA) and oleic acid (OA) at 300 °C exhibited narrow PL spectra and a related low PL efficiency (38%). In contrast, the core/shell QDs prepared in the solution of 1-octadecene (ODE) and hexadecylamine (HDA) at 200 °C revealed a high PL efficiency (70%) and broad PL spectra. This phenomenon is ascribed that the precursor of Cd, reaction temperature, solvents, and ligands affected the formation process of the shell. The slow growth rate of the shell in the solution of ODE and HDA made QDs with a high PL efficiency. Metal acetate salts without reaction with HDA led to the core/shell QDs with a broad size distribution.     

Piezoelectric properties in (K0.5Bi0.5)TiO 3-(Na0.5Bi0.5)TiO3-BaTiO 3 lead-free ceramics

Lead-free piezoelectric ceramics with compositions around the morphotropic phase boundary (MPB) x(Na_0.5Bi_0.5)TiO _3-y(K_0.5Bi_0.5)TiO₃-zBaTiO ₃ [x + y + z = 1; y:z = 2:1] were synthesized using conventional, solid-state processing. Dielectric maximum temperatures of 280degC and 262degC were found for tetragonal 0.79(Na_0.5Bi_0.5)TiO₃-0.14(K_0.5 Bi_0.5)TiO₃-0.07BaTiO$ d3 (BNBK79) and MPB composition 0.88(Na_0.5Bi_0.5)TiO₃-0.08(K _0.5Bi_0.5)TiO₃-0.04BaTiO$ d3 (BNBK88), with depolarization temperatures of 224degC and 162degC, respectively. Piezoelectric coefficients d₃₃ were found to be 135 pC/N and 170 pC/N for BNBK79 and BNBK88, and the piezoelectric d₃₁ was determined to be -37 pC/N and -51 pC/N, demonstrating strong anisotropy. Coercive field values were found to be 37 kV/cm and 29 kV/cm for BNBK79 and BNBK88, respectively. The remanent polarization of BNBK88 (~40 muC/cm²) was larger than that of BNBK79 (~29 muC/cm²). The piezoelectric, electromechanical, and high-field strain behaviors also were studied as a function of temperature and discussed     

High temperature oxidation behavior of Ti0.5Al0.5N coating and Ti0.5Al0.4Si0.1N coating

Good oxidation resistance of hard coatings is important for cutting tools. Ti_0.5Al_0.5N coating and Ti_0.5Al_0.4Si_0.1N coating were deposited by cathodic arc evaporation and their oxidation behavior at 850 °C, 900 °C and 1000 °C was compared. The effect of Si addition on the oxidation resistance of Ti_0.5Al_0.4Si_0.1N was investigated. Results show that the oxidation resistance of Ti_0.5Al_0.4Si_0.1N coating at 850-1000 °C is superior to Ti_0.5Al_0.5N coating. The improved oxidation resistance of Ti_0.5Al_0.4Si_0.1N coating can be ascribed to the combined action of Al₂O₃ and SiO₂ barrier layer, the reduction of columnar structure and the refinement of grains. In particular, Si addition increases the diffusion coefficient of Al and promotes the preferential formation of Al₂O₃ barrier layer.     

Structural engineering of Ba0.5Sr0.5TiO3 epitaxial films

Ba_0.5Sr_0.5TiO₃ single-layered and multilayered films were epitaxially grown on a (001) LaAlO₃ substrate using single target and dual target pulsed laser deposition, respectively. Compared to the single-layered films, the multilayered films exhibited broader phase transition and improved thermo-stability. The microstructure of these epitaxial films was investigated using high-resolution transmission electron microscopy in details. Misfit and threading dislocations were observed in the single-layered film, while the threading dislocations were dramatically decreased and no misfit dislocations were found in the multilayered film. It is suspected that the difference in dislocation densities is responsible for the different behaviors of the permittivity with temperature.     

Site symmetry of Yb in In0.5Ga0.5P

The site symmetry of Yb³⁺ in In_0.5Ga_0.5P grown by liquid phase epitaxy has been investigated using a polarized luminescence spectroscopic technique. The site symmetry of indium in In_0.5Ga_0.5P was lowered from T_d to C_2v resulting from substitution of indium by ytterbium. The lowering symmetry was confirmed by the spectroscopic observation of the splits of Γ₈ levels of T_d in C_2v symmetry. The substitutional site symmetry of Yb³⁺ in In_0.5Ga_0.5P, i.e. Yb_ln³⁺, was revealed as C_2v.     

Effect of Na/K excess on the electrical properties of Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3 thin films prepared by sol-gel processing

(Na_0.85K_0.15)_0.5Bi_0.5TiO₃ (NKBT) thin films derived from different amounts of Na/K excess content were fabricated via an aqueous sol-gel method on a Pt(111)/Ti/SiO₂/Si substrate, and the effect of Na/K excess content on the microstructure and electrical properties of the NKBT thin films was investigated. A second phase appears when Na/K excess content is below 20 mol%. Appropriated Na/K excess can enhance the polarization and dielectric properties due to compensation of Na/K loss that occurred during heat treatment. The 20 mol% excess derived NKBT thin film exhibits the best ferroelectric and dielectric properties with a remnant polarization (Pr) of 13.6 μC/cm², and a coercive field (Ec) of 104.8 KV/cm, together with a dielectric constant of 406 and a dissipation factor of 0.064. Similar to the dielectric response change with Na/K excess content, the decreasing concentration of charged defects is the main reason resulting in the increase of the piezoelectric property. The film with a 20 mol% excess content exhibited an effective d₃₃^? of about 56 pm/V. Also, the NKBT with a 20 mol% excess content exhibits the lowest current density of 5.6 × 10^− 5 A/cm² at 10 V.     

La0.5Ca0.5MnO3中Ca位上Ba掺杂效应研究

用固态反应法制备了具有单相的Ｌａ０．５Ｃａ０．５－ｘＢａｘＭｎＯ３系列样品,其结构随Ｂａ含量增加由立方晶系转变为典型的正交晶系。零场下运输性质实验表明,在较低掺杂量时,系统在整个温区显示半导体型导电特征,而当掺杂量超过０．１４时,系统发生由半导体到金属的转变,且转变的温度随掺杂量增加而移向高温端,基于对实验结果的分析,就Ｃａ位上Ｂａ的掺杂所起的作用进行了初步探讨。