Critical Temperature of Smart Meta-superconducting MgB<Subscript>2</Subscript>

Enhancing the critical temperature (T _C ) is important not only to widen the practical applications but also to expand the theories of superconductivity. Inspired by the meta-material structure, we designed a smart meta-superconductor consisting of MgB₂ microparticles and Y₂O₃/Eu³⁺ nanorods. In the local electric field, Y₂O₃/Eu³⁺ nanorods generate an electroluminescence (EL) that can excite MgB₂ particles, thereby improving the T _C by strengthening the electron–phonon interaction. An MgB₂-based superconductor doped with one of four dopants of different EL intensities was prepared by an ex situ process. Results showed that the T _C of MgB₂ doped with 2 wt% Y₂O₃, which is not an EL material, is 33.1 K. However, replacing Y₂O₃ with Y₂O₃/Eu³⁺II, which displays a strong EL intensity, can improve the T _C by 2.8 to 35.9 K, which is even higher than that of pure MgB₂. The significant increment in T _C results from the EL exciting effect. Apart from EL intensity, the micromorphology and degree of dispersion of the dopants also affected the T _C . This smart meta-superconductor provides a new method to increase T _C .     

Hydrothermal synthesis of Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Eu<Superscript>3+</Superscript> nanorods and its growth mechanism and luminescence properties

Homogeneous Y₂O₃:Eu³⁺ nanorods with the lengths of several micrometres were successfully synthesised on a large scale by using a urea-assisted hydrothermal method and a post-calcining process. In this study, the influences of urea content and NaOH concentration on the oriented growth, photoluminescence (PL) and electroluminescence (EL) intensity enhancement of Y₂O₃:Eu³⁺ were investigated. As a precipitant for isotropic growth, urea can counteract the effect of NaOH on oriented growth along the c-axis during hydrothermal treatment. The Y₂O₃:Eu³⁺ powders exhibited a strong red emission centred at 613 nm under either 245 nm UV excitation or the direct current high electric field. The PL intensity of the Y₂O₃:Eu³⁺ phosphor prepared with 0.3 g of urea reached 141 % that of the sample prepared under the same conditions but without urea. The strategy for controlling the oriented growth, PL and EL enhancement of Y₂O₃:Eu³⁺ can be extended to the synthesis of other inorganic nano/micromaterials.     

The electroluminescence of SiO<Subscript>2</Subscript> layers with excess silicon

We have studied the electroluminescence (EL) from Si-SiO₂ structures containing excess ion-implanted silicon in the oxide layer. The implantation of 150-keV silicon ions to doses in the range from 5×10¹⁶ to 3×10¹⁷ cm⁻² leads to the appearance of emission bands at 2.7 and 4.4 eV in the EL spectrum, which are usually assigned to the silylene centers. It is suggested that the formation of the corresponding emission centers is directly related to the ion implantation process, irrespective of the type of implanted ions.     

Partially ordered organic-inorganic nanocomposites in the system UO<Subscript>2</Subscript>SeO<Subscript>4</Subscript>-H<Subscript>2</Subscript>O-NH<Subscript>3</Subscript>(CH<Subscript>2</Subscript>)<Subscript>9</Subscript>NH<Subscript>3</Subscript>

The compound [NH₃(CH₂)₉NH₃]₂[(UO₂)₃(SeO₄)₅(H₂O)₂](H₂O)_x (1) was prepared by isothermal evaporation from aqueous uranyl selenate solutions containing 1,9-diaminononane. A structural study showed that the compound is a partially ordered organic-inorganic nanocomposite. The structural model of the inorganic complex was determined by single crystal X-ray diffraction a = 19.5572(5), c = 47.878(2) Å, V= 15859.1(9) ų, Z= 12; R₁ = 0.1318, wR₂ = 0.3186 for 2808 reflections with |F_o| ≥ 4σ_F). The structure consists of double hydrogen-bonded [(UO₂)₃(SeO₄)₅(H₂O)₂]^2- layers parallel to the (001) plane. The disordered protonated 1,9-diaminononane molecules and water molecules are arranged between the layers. The inorganic layered complex [(UO₂)₃(SeO₄)₅(H₂O)₂]^2- belongs to a new type that was not observed previously in the structures of inorganic and organometallic compounds.     

Crystal structure of [CH<Subscript>3</Subscript>NH<Subscript>3</Subscript>][(UO<Subscript>2</Subscript>)(H<Subscript>2</Subscript>AsO<Subscript>4</Subscript>)<Subscript>3</Subscript>]

The crystal structure of a previously unknown compound [CH₃NH₃][(UO₂)(H₂AsO₄)₃] was solved by direct methods and refined to R ₁ = 0.038 for 3041 reflections with |F _hkl | >-4σ |F _hkl |. The compound crystallizes in the monoclinic system, space group P2₁/c, a = 8.980(1), b = 21.767(2), c = 7.867(1) Å, β = 115.919(5)°, V = 1383.1(3) ų, Z = 4. In the structure of the compound, pentagonal bipyramids of uranyl ions, sharing bridging atoms with tetrahedral [H₂AsO₄]^? anions, form strongly corrugated layered complexes [(UO₂)(H₂AsO₄)₃]^? arranged parallel to the (100) plane. The protonated methylamine molecules [CH₃NH₃]⁺ form unidimensional tapelike packings parallel to the c axis and linked by hydrophilic-hydro-phobic interactions. The topology of the layered uranyl arsenate complex [(UO₂)(H₂AsO₄)₃]^? is unusual for uranyl compounds and was not observed previously. A specific feature of this topology is the presence of monodentate arsenate “branches” arranged within the layer.     

The effect of annealing on the electroluminescence of SiO<Subscript>2</Subscript> layers with excess silicon

We have studied the effect of annealing on the electroluminescence (EL) spectrum of Si-SiO₂ structures containing excess ion-implanted silicon in the oxide layer. The implantation of 150-keV silicon ions to doses in the range from 5×10¹⁶ to 3×10¹⁷ cm⁻² leads to the appearance of an intense emission band at 2.7 eV in the EL spectrum. The postimplantation annealing leads to a decrease in the intensity of this band and to the appearance of a new EL band at 1.6 eV assigned to radiative transitions in defect centers formed at the boundaries between silicon nanoclusters and silicon dioxide.     

Magnetoelectric interactions in BiFeO<Subscript>3</Subscript>, Bi<Subscript>0.95</Subscript>Nd<Subscript>0.05</Subscript>FeO<Subscript>3</Subscript>, and Bi<Subscript>0.95</Subscript>La<Subscript>0.05</Subscript>FeO<Subscript>3</Subscript> multiferroics

The technology of ceramic BiFeO₃, Bi_0.95Nd_0.05FeO₃, and Bi_0.95La_0.05FeO₃ multiferroics is described. The room-temperature magnetization, magnetoelectric (ME), and magnetodielectric (MDE) effects in these compounds have been studied. It is established that even a small fraction (x = 0.05) of rare-earth additives (La, Nd) to bismuth ferrite not only enhance its magnetic properties, but also significantly influence the ME and MDE effects. The dependence of the ME effect on the frequency of modulation of the alternating magnetic field in Bi_0.95Nd_0.05FeO₃, and Bi_0.95La_0.05FeO₃ is more pronounced than in pure BiFeO₃.     

Liquid-phase epitaxy of NdAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> and Yb-doped YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

Epitaxial layers of NaAl₃(BO₃)₄ (NAB) and YAl₃(BO₃)₄〈Yb〉 (YAB〈Yb〉) containing up to 10 at % Yb have been grown by liquid-phase epitaxy on YAB substrates. Their growth kinetics have been studied at relative supersaturations of the high-temperature solution from 2 × 10^?2 to 16 × 10^?2. The ytterbium concentration in YAB〈Yb〉 has been shown to vary little during the epitaxial process. Near the edges of the substrate, the surface morphology of the layers is complicated by vicinals, which have a spiral form in the case of YAB〈Yb〉. On \(\{ 10\overline 1 1\} \) YAB substrates, homogeneous single-crystal NAB films have been grown.     

Crystal structure of KNa<Subscript>3</Subscript>[(UO<Subscript>2</Subscript>)<Subscript>5</Subscript>O<Subscript>6</Subscript>(SO<Subscript>4</Subscript>)]

The crystal structure of a previously unknown compound KNa₃[(UO₂)₅O₆(SO₄)] [space group Pbca, a = 13.2855(15), b = 13.7258(18), c = 19.712(2) Å, V = 3594.6(7) ų] was solved by direct methods and refined to R ₁ = 0.055 for 3022 reflections with |F _hkl | ≥ 4σ |F _hkl |. In the structure there are five sym-metrically nonequivalent uranyl cations. They are linked by cationcation (CC) interactions to form a pentamer whose central cation is U(2)O ₂ ²⁺ forming two three-centered CC bonds. All the uranyl ions are coordinated in the equatorial plane by five O atoms, which leads to the formation of pentagonal bipyramids sharing common edges to form layers parallel to the (100) plane. The sulfate tetrahedron links the uranyl layers into a 3D framework. The K⁺ and Na⁺ cations are arranged in framework voids. A brief review of CC interactions in U(VI) compounds is presented.     

Electrical properties of Ni<Subscript>0.93</Subscript>Co<Subscript>0.02</Subscript>Mn<Subscript>0.05</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> + BaTiO<Subscript>3</Subscript> ME composites

Polycrystalline samples of mixed composites of Ni_0.93Co_0.02Mn_0.05Fe₂O₄ + BaTiO₃ were prepared by conventional double sintering ceramic method. The phase analysis was carried out by using X-ray diffraction technique. Variation of dc resistivity and thermo emf was studied as a function of temperature. AC conductivity (σ_ac) was investigated in the frequency range 100 Hz–1 MHz. The loss tangent (tan δ) measurements conclude that the conduction mechanism in these samples is due to small polaron hopping. The magnetoelectric conversion factor, i.e. dc(ME) _H was studied as a function of intensity of magnetic field and the maximum value 407 μV/cm/Oe was observed at a field of 0.8 kOe in a composite with 85% BaTiO₃ and 15% Ni_0.93Co_0.02Mn_0.05Fe₂O₄ phase.     

Impedance spectroscopy of Ba<Subscript>3</Subscript>Sr<Subscript>2</Subscript>DyTi<Subscript>3</Subscript>V<Subscript>7</Subscript>O<Subscript>30</Subscript> ceramic

Polycrystalline sample of Ba₃Sr₂DyTi₃V₇O₃₀ was prepared at 950°C using a high-temperature solid-state reaction technique. X-ray structural analysis indicated the formation of a single-phase orthorhombic structure with lattice parameters: a = 12·2719 (39) Å, b = 8·9715(39) Å and c = 19·7812(39) Å. Microstructural study showed densely packed uniform distribution of grains over the surface of the sample. The a.c. impedance plots were used as tools to analyse the electrical response of the sample as a function of frequency at different temperatures (30–500°C). These plots revealed the presence of grain boundary effect, from 200·C onwards. Complex impedance analysis showed non-Debye type of dielectric relaxation. The Nyquist plots showed the negative temperature coefficient of resistance character of Ba₃Sr₂DyTi₃V₇O₃₀. A hopping mechanism of electrical transport processes in the system is evident from the modulus analysis. The activation energy of the compound (calculated both from loss and modulus spectrum) is the same, and hence the relaxation process may be attributed to the same type of charge carrier.     

Synthesis and crystal structure of Cu<Subscript>2</Subscript>{(UO<Subscript>2</Subscript>)<Subscript>3</Subscript>[(S,Cr)O<Subscript>4</Subscript>]<Subscript>5</Subscript>}(H<Subscript>2</Subscript>O)<Subscript>17</Subscript>

Cu₂{(UO₂)₃[(S,Cr)O₄]₅}(H₂O)₁₇ crystals were prepared by evaporation of aqueous solutions. The crystal structure was solved by the direct method and refined to R ₁ = 0.064 (wR ₂ = 0.177) for 8120 reflections with ¦F _hkl¦ 4 ¦F _hkl¦. Rhombic system, space group Pbca, a = 18.0586(8), b = 19.9898(9), c = 20.5553(8) Å, V = 7420.2(6) ų. The structure is based on {(UO₂)₃[(S,Cr)O₄]₅}^4– anionic layers, formed by combination of UO₇ pentagonal bipyramids and TO₄ tetrahedra through common vertices. The { (UO₂)₃ [(S,Cr)O₄]₅}^4– layers are parallel to the (010) plane. The Cu²⁺ (H₂O)₆ octahedra and additional water molecules are located in the interplanar space and provide binding of the layers in the structure by hydrogen bonds. Based on the occupancy of tetrahedral positions, more accurate chemical formula of the compound should be written as Cu₂{(UO₂)₃[(S_0.804 Cr_0.196)O₄]₅} (H₂O)₁₇.Translated from Radiokhimiya, Vol. 46, No. 5, 2004, pp. 408–411.Original Russian Text Copyright © 2004 by Krivovichev, Burns.     

High-temperature crystal chemistry of Na<Subscript>6</Subscript>(UO<Subscript>2</Subscript>)<Subscript>2</Subscript>O(MoO<Subscript>4</Subscript>)<Subscript>4</Subscript>

Thermal deformations of Na₆(UO₂)₂O(MoO₄)₄ were studied by high-temperature powder X-ray diffraction. The compound crystallizes in the triclinic system, space group Р\(\bar 1\), a = 7.636(7), b = 8.163(6), c = 8.746(4) Å, α = 72.32(9)°, β = 79.36(4)°, γ = 65.79(5)°, V = 472.74(4) ų. It is stable in the temperature interval 20–700°С. The thermal expansion coefficients (TECs) are α₁₁ = 25.5 × 10^–6, α₂₂ = 7.8 × 10^–6, and α₃₃ = 1.1 × 10^–6 (°C)^–1. The orientation of the TEC pattern relative to the crystallographic axes is a₃₃^Z = 45°, a₃₃^X = 122°, a₂₂^Z = 59°, and a₂₂^X = 66°. The anisotropy of the thermal expansion is due to specific features of the crystal structure of the compound.     

Graphite intercalation in the graphite-H<Subscript>2</Subscript>SO<Subscript>4</Subscript>-R (R = H<Subscript>2</Subscript>O,C<Subscript>2</Subscript>H<Subscript>5</Subscript>OH,C<Subscript>2</Subscript>H<Subscript>5</Subscript>COOH) systems

The electrochemical behavior of graphite in polar solvent-H₂SO₄ electrolytes is studied in a wide range of H₂SO₄ concentrations. The results demonstrate that, with decreasing H₂SO₄ concentration, the charging curves become smoother and shift to higher potentials, the stage index increases, and intercalation compounds are more difficult to obtain. At H₂SO₄ concentrations of 50% and lower, graphite polarization is accompanied by a significant overoxidation, as evidenced by the anomalously small intercalate layer thicknesses: 7.75–7.85 Å. Anodic polarization of graphite in electrolytes consisting of H₂SO₄ and a polar solvent (H₂O and C₂H₅OH) follows the same mechanism as in the case of the formation of graphite bisulfate. In going from water to C₂H₅OH, a less polar solvent, the intercalation threshold increases from 30 to 70% H₂SO₄. It is shown using a set of characterization techniques that, in the graphite-H₂SO₄-R (R = H₂O, C₂H₅OH) systems, the solvent is not intercalated into graphite. Stage I–III ternary graphite intercalation compounds (TGICs) are synthesized for the first time in the graphite-H₂SO₄-C₂H₅COOH system: stage I TGICs at H₂SO₄ concentrations above 70%, stage II in the range 30–70% H₂SO₄, and stage III at H₂SO₄ concentrations down to 10%. The intercalate layer thickness in the TGICs is 7.94 Å. The mechanism of TGIC formation in this system is shown to differ from those in mixtures of H₂SO₄ and other organic acids. Thermal analysis in combination with spectroscopic analysis of gaseous products provides clear evidence for intercalation of propionic acid into the TGIC and indicates that the thermal stability of this compound is lower than that of graphite bisulfate.Translated from Neorganicheskie Materialy, Vol. 41, No. 2, 2005, pp. 162–169.Original Russian Text Copyright © 2005 by Shornikova, Sorokina, Maksimova, Avdeev.     

Temperature-stable and low loss Fe-containing dielectrics in BaO-Ln<Subscript>2</Subscript>O<Subscript>3</Subscript>-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> system

Polycrystalline samples of Ba₄Ln₂Fe₂Ta₈O₃₀ (Ln = La and Nd) were prepared by a high temperature solid-state reaction technique. The formation, structure, dielectric and ferroelectric properties of the compounds were studied. Both compounds are found to be paraelectrics with filled tetragonal tungsten bronze (TB) structure at room temperature. Dielectric measurements revealed that the present ceramics have exceptional temperature stability, a relatively small temperature coefficient of dielectric constant (τ _ε ) of −25 and −58 ppm/°C, with a high dielectric constant of 118 and 96 together with a low dielectric loss of 1.2 × 10⁻³ and 2.8 × 10⁻³ (at 1 MHz) for Ba₄La₂Fe₂Ta₈O₃₀ and Ba₄Nd₂Fe₂Ta₈O₃₀, respectively. The measured dielectric properties indicate that both materials are possible candidates for the fabrication of discrete multilayer capacitors in microelectronic technology.     

X-ray diffraction study of the Cu<Subscript>2</Subscript>Se-In<Subscript>2</Subscript>Se<Subscript>3</Subscript>-Cr<Subscript>2</Subscript>Se<Subscript>3</Subscript> system near CuInCr<Subscript>2</Subscript>Se<Subscript>5</Subscript>

The structure of three compounds in the Cu₂Se-In₂Se₃-Cr₂Se₃ system near CuInCr₂Se₅ is determined by single-crystal x-ray diffraction: CuInCr₄Se₈ (I), Cu₂In₂Se₄ (II), and Cu_0.5In_0.5Se (III). I has a cubic (spinel type) structure: a = 10.606(4) Å, Z = 4, sp. gr. F43m. II has a pseudotetragonal (sphalerite type) structure: a = 5.774(2) Å, c = 11.617(6) Å. The structure of II was solved in a reduced unit cell with a = 5.774(2) Å, b = 5.774(2) Å, c = 7.095(6) Å, = 113.95(5)°, = 113.95(5)°, = 90.00(4)°, Z = 1, sp. gr. P1. III has a triclinic cell (disordered structure of II): a = 4.088(1) Å, b = 4.091(2) Å, c = 4.101(1) Å, = 60.05(1)°, = 60.08(1)°, = 89.98(4)°, Z = 1, sp. gr. P1. The Cu and In atoms in I sit in inequivalent tetrahedral sites, and the Cr atoms reside in octahedral interstices of the close packing of Se atoms. The bond lengths are In–Se = 2.538(6), Cr(1)–Se(1) = 2.514(7), Cr(1)–Se(2) = 2.576(8), and Cu–Se = 2.437(5) Å. In II, all of the atoms sit in tetrahedral sites; the mean bond lengths are In–Se = 2.578(6) and Cu–Se = 2.44(1) Å. In III, the Cu and In atoms are fully disordered in the same tetrahedral site; the mean Cu(In)–Se bond length is 2.508(6) Å.Translated from Neorganicheskie Materialy, Vol. 40, No. 12, 2004, pp. 1435–1439.Original Russian Text Copyright © 2004 by Antsyshkina, Sadikov, Koneshova, Sergienko.     

Synthesis and structure of (NH<Subscript>4</Subscript>)<Subscript>3</Subscript>[UO<Subscript>2</Subscript>(CH<Subscript>3</Subscript>COO)<Subscript>3</Subscript>]<Subscript>2</Subscript>(NCS)

The compound (NH₄)₃[UO₂(CH₃COO)₃]₂(NCS) (I) was synthesized and examined by single crystal X-ray diffraction analysis. The compound crystallizes in the rhombic system with the unit cell parameters a = 11.5546(4), b = 18.5548(7), c = 6.7222(3) Å, V = 1441.19(10) ų, space group P2₁2₁2, Z = 2, R = 0.0345. The uranium-containing structural units of crystals of I are isolated mononuclear groups [UO₂(CH₃COO)₃]^? belonging to crystal-chemical group AB ₃ ⁰¹ (A = UO ₂ ²⁺ , B⁰¹ = CH₃COO^?) of uranyl complexes. The specific features of packing of the uranium-containing complexes in the crystal structure are considered.     

Etching behavior of CdTe in aqueous H<Subscript>2</Subscript>O<Subscript>2</Subscript>-HI-C<Subscript>6</Subscript>H<Subscript>8</Subscript>O<Subscript>7</Subscript> solutions

This paper examines the dissolution behavior of the (111)A, (111)B, (110), and (100) surfaces of CdTe single crystals in aqueous H₂O₂-HI-C₆H₈O₇ (citric acid) solutions. We have determined the dissolution rate of the crystals as a function of temperature and solution concentration, located the composition regions of polishing and selective etchants, and studied the microstructure and roughness of surfaces polished with optimized etchants. The etching behavior of CdTe is shown to depend on its crystallographic orientation.     

Characterization and electrical properties of semiconducting Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-K<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> glasses

Semiconducting glasses of the Fe₂O₃-Bi₂O₃-K₂B₄O₇ system were prepared by the press-quenching method and their dc conductivity in the temperature range 223–393 K was measured. The glass transition temperature values (T_g) of the present glasses were larger than those of tellurite glasses. This indicates a higher thermal stability of the glass in the present system. The density for these glasses was consistent with the ionic size, atomic weight and amount of different elements in the glasses. Mössbauer results revealed that the relative fraction of Fe increases with increasing Fe₂O₃ content. Electrical conductivity showed a similar composition dependency as the fraction of Fe. The glasses had conductivities ranging from 10 to 10 Scm at temperatures from 223 to 393 K. Electrical conduction of the glasses was confirmed to be due to non-adiabatic small polaron hopping and the conduction was primarily determined by hopping carrier mobility.     

Crystallization from high-temperature solutions in the K<Subscript>2</Subscript>O-P<Subscript>2</Subscript>O<Subscript>5</Subscript>-V<Subscript>2</Subscript>O<Subscript>5</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> system

We have studied general trends of crystallization from high-temperature solutions in the K₂O-P₂O₅-V₂O₅-Bi₂O₃ system at P/V = 0.5?2.0, K/(P + V) = 0.7?1.4, and Bi₂O₃ contents from 25 to 50 wt % and identified the stability regions of BiPO₄, K₃Bi₅(PO₄)₆, K₂Bi₃O(PO₄)₃, and K₃Bi₂(PO₄)_{3 ? x} (VO₄) _x (x = 0?3) solid solutions. The synthesized compounds have been characterized by X-ray powder diffraction and IR spectroscopy, and the structure of two solid solutions has been determined by single-crystal X-ray diffraction (sp. gr. C ₂/c): K₃Bi₂(PO₄)₂(VO₄), a = 13.8857(8), b = 13.5432(5), c = 6.8679(4) Å, β = 114.031(7)°; K₃Bi₂(PO₄)_1.25(VO₄)_1.75, a = 13.907(4), b = 13.615(2), c = 6.956(2) Å, β = 113.52(4)°.