射频磁控溅射纳米二氧化钒薄膜的电致相变特性

采用射频磁控溅射方法和热处理工艺制备了二氧化钒（VO2）薄膜,并制作了金属钨／VO2／金属钨三明治结构,通过改变金属钨／VO2／金属钨三明治结构中VO2薄膜与金属钨电极的接触面积,研究了VO2薄膜的电致相变特性．采用x射线衍射仪（XRD）、扫描电子显微镜（SEM）、四探针和半导体参数测试仪对VO2薄膜的结晶取向、表面形貌、方块电阻和,I-V特性进行了测试．实验结果表明,所制备的VO2薄膜为具有热致相变特性的单一组分VO2纳米薄膜,在热激励下,薄膜的方块电阻相变幅度达到2个数量级;在电压的激励下,VO2薄膜与金属钨的接触面积为12μm×12um时,电流发生跳变的阁值电压为9．4V,随着接触面积的减小,闽值电压也逐渐降低．     

磁控溅射法制备CNx薄膜及其结构表征

以Ar/N2混合气体作为溅射气体,利用直流磁控溅射的方法制备子碳氮薄膜.利用X射线衍射和红外光谱对碳氮薄膜进行了结构分析.IR光谱证实了薄膜中碳氮化合物的形成,而XRD的检测结果表明,类石墨相g-C3N4是碳氮薄膜中的主要成分,同时有极少量的β-C3N4晶相生成.同时发现,Ar/N2溅射气体的分压对获取β-CsN4有着明显的影响.本实验中,当N2体积分数为33%,碳氮薄膜中β-C3N4晶相的含量最高.     

二氧化钒薄膜微结构和光学相变特性

二氧化钒薄膜是最有前途应用到非制冷红外微测热辐射计的材料，它的特性与制备方法、化学计量比、结构和取向等有直接关系，仔细控制工艺参数是制备应用的VO2薄膜关键。研究中采用脉冲磁控反应溅射方法，通过精确地控制功率、氧分压、基底温度等关键工艺参数，在石英玻璃和硅片上制备VO2薄膜。利用X射线衍射和x射线光电子谱，分析了薄膜的成分、相结构、结晶和价态情况，用原子力显微镜表征了薄膜的微观结构，在光谱仪对VO2薄膜的高低温光学特性原位测量。结果表明，得到的VO2薄膜纯度高、相结构单一、结晶度、多晶生长。在波数2000cm^-1高低温透射变化达到51％。     

二氧化钒薄膜的研究进展

系统总结了VO₂薄膜常用的制备方法,并针对目前热色智能窗用VO₂薄膜存在的问题,如透过率低、调节率不理想等,详细综述了提高VO₂薄膜性能的工艺改进途径,包括沉积减反层、加入折射率小的材料、掺杂等,以揭示改善VO₂薄膜的最佳途径,为推进VO₂智能窗的实用化提供依据。     

磁控溅射法在玻璃基片制备VO_2薄膜的结构与性能

采用射频磁控溅射法在玻璃基片上制备了VO2薄膜。采用XRD、AFM和红外光谱仪研究了不同基片温度所得薄膜的结构、光学性能和相变特性。实验结果表明,薄膜的结晶程度随基片温度的增加而增加,并且VO2具有(011)择优取向。基片温度在400℃以上的VO2薄膜均出现较好的相变特性,500℃时的薄膜相变特性最佳。薄膜的红外透过率随着沉积温度的增加而逐渐增加。     

二氧化钒的制备及应用研究

文章介绍了VO2的晶体结构及在智能温控材料方面的应用,综述了掺杂对VO2相变温度的调控和作为光学减反膜对可见光透过率的调控,分析了掺杂离子的性质、种类对VO2相变温度的影响,并对VO2的制备方法及其超细粉体的研究进展进行了总结。     

磁控溅射制备纳米TiO2薄膜光催化降解苯酚的研究

采用射频磁控溅射方法分别在玻璃、A1片和ITO玻璃上制备出性能优良的TiO2纳米薄膜,研究了薄膜光催化性能.通过XRD、SEM和UV-Vis吸收光谱对薄膜进行表征,研究了不同退火温度和不同衬底对薄膜光催化性能的影响.结果表明:薄膜经500℃退火处理,TiO2由非晶转变为锐钛矿结构,并且退火后薄膜的紫外吸收波长发生红移,光催化降解性能提高;比较玻璃、ITO玻璃和A1为衬底制备的TiO2薄膜,以A1片为衬底的TiO2薄膜,由于形成Schottky势垒,光催化性更好.     

Mg2Si半导体薄膜的磁控溅射制备

采用磁控溅射技术和退火工艺制备出Mg2Si半导体薄膜,研究了退火时间对Mg2Si薄膜的形成和结构的影响.首先在Si(111)衬底上溅射沉积380nm Mg膜,然后在退火炉内氩气氛围500℃退火,退火时间分别为3.5h、4.5h、5.0h、5.5h、6.0h.采用X射线衍射和扫描电镜对薄膜的结构和形貌进行了表征.结果表明,采用磁控溅射方法成功地制备了环境友好的半导体Mg2Si薄膜.Mg2Si薄膜具有Mg2Si(220)的择优生长特性,最强衍射峰出现在40.12°位置;随着退火时间的延长,Mg2Si外延薄膜的衍射峰强度先逐渐增强后逐渐减弱,退火5h后,样品的衍射峰最强.Mg2Si晶粒随着退火时间的延长,先逐渐增大,退火5h后逐渐减小.     

掺钨二氧化钒薄膜的制备与分析

通过凋研国内外的各种制备方法,比较它们的优缺点后,选用磁控溅射法.在硅片上得到了电阻变化2个数量级的二氧化钒(VO2)薄膜.对薄膜进行电学性能的测试,结果表明:掺钨后二氧化钒薄膜的相变温度比纯的二氧化钒薄膜相变温度有所降低,掺钨后薄膜的近红外透射率也随之减小.通过X射线衍射和X射线光电子谱对薄膜的微观结构和组分进行了分析.     

单斜氧化铜薄膜的磁控溅射制备及表征

采用磁控溅射, 通过氧氩比的调制在玻璃衬底上沉积了单斜结构的CuO薄膜, 并重点研究了氧氩比对薄膜微结构及光学吸收边的影响。研究表明随着氧氩比的增加, 薄膜逐渐从多相向单相转变, 薄膜表面逐渐趋于光滑和平整, CuO<-111>择优取向逐渐减弱。晶轴上的晶格畸变结果显示氧氩比对晶轴 a, b和 c的影响不尽相同。a, b轴上呈现的压应力均先明显增大然后变得稳定, 而 c轴上则呈现了压应力向拉应力的转变。氧氩比对晶格常数的影响反应了 a, b和 c轴上晶粒生长的各向异性。CuO薄膜为直接带隙半导体, 其1.9 e V附近的光学吸收边随着氧氩比的增加而略微蓝移, 吸收边的蓝移归结于晶粒的量子尺寸效应。     

射频磁控溅射制备硼碳氮薄膜

采用射频磁控溅射技术,用六角氮化硼和石墨为溅射靶,以氩气(Ar)和氮气(N2)为工作气体,在Si (100)衬底上制备出硼碳氮薄膜.通过X射线衍射(XRD)、傅里叶红外吸收光谱(FTIR)和X射线光电子能谱(XPS)等分析手段对样品结构、组分进行了分析.结果表明,样品的组成原子之间实现了原子级化合,且薄膜为乱层石墨结构.样品中B、C、N的原子比近似为1:1:1.     

Hydrophilic properties of nano-TiO2 thin films deposited by RF magnetron sputtering

Microstructure and hydrophilicity of nano-titanium dioxide (TiO₂) thin films, deposited by radio frequency magnetron sputtering, annealed at different temperatures, were studied by field emission scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and water contact angle methods. It is found that the crystal phase transforms from amorphous to rutile structure with increase of annealing temperature from room temperature to 800 °C. It is also indicated that the organic contaminants on the surface of the films can be removed and the oxygen vacancies can be reduced by the annealing treatment. Annealed at the temperature below 300 °C, amorphous TiO₂ thin films show rather poor hydrophilicity, and annealed at the temperature range from 400 to 650 °C, the super hydrophilicity anatase of TiO₂ thin films can be observed. However, when the annealing temperature reaches 800 °C, the hydrophilicity of the films declines mainly derived from the appearance of rutile.     

反应RF磁控溅射法制备非晶氧化硅薄膜及其特性研究

在氧气和氩气的混合气体中,在没有额外加热的条件下用反应射（RF）溅射硅靶制备了非晶氧化硅（a-SiO2)薄膜,并测试分析了薄膜的结构和电特性与O2／Ar流量比的关系。当固定氩气流量,改变氧气流量时,薄膜沉积速率先急剧减少,再增大,然后又减少。当O2／Ar≥0．075时,得到满足化学配比的氧化硅薄膜。并且,随着O2／Ar流量比的增大,薄膜的电阻,电场击穿强度都有所增大,而在HF缓冲溶液（BHF）中的腐蚀速率下降,所有的样品中无明显的H－OH水分子的红外吸收峰。比较发现反应射频（RF）磁控溅射法制备的a-SiO2薄膜具有良好的致密性和绝缘性。     

Characterization of zirconium oxynitride films obtained by radio frequency magnetron reactive sputtering

Thin ZrN_xO_y films are deposited on Si (100) substrates by radio frequency (RF) reactive magnetron sputtering of a zirconium target in an argon-oxygen-nitrogen mixture. The Φ_N2/Φ_{(Ar + N2 + O2)} ratio was varied in the range 2.5%-100% while the oxygen flux was kept constant. The films were characterized by combining several techniques: X-ray photoelectron spectroscopy, X-ray diffraction and Secondary Ion Mass Spectroscopy. The relationship between structural and compositional properties and the sputtering parameters was investigated. Increasing nitrogen partial pressure in the gas mixture, a chemical and structural evolution happens. At lowest nitrogen flux, ZrN cubic phase is formed with a very small amount of amorphous zirconium oxynitride. At highest nitrogen flux, only crystalline ZrON phases were found. For the films obtained between these two extremes, a co-presence of ZrN and ZrON can be detected. In particular, chemical analysis revealed the co-presence of ZrO₂, ZrN, ZrON and N-rich zirconium nitride which is correlated with the Φ_N2/Φ_{(Ar + N2 + O2)} values. A zirconium nitride crystal structure with metal vacancies model has been considered in order to explain the different chemical environment detected by X-ray photoelectron spectroscopy measurements. The metal vacancies are a consequence of the deposition rate decreasing due to the target poisoning. It's evident that the growth process is strongly influenced by the zirconium atoms flux. This parameter can explain the structural evolution.     

射频磁控溅射制备Mn掺杂ZnO薄膜的结构与光学性能

采用反应射频磁控溅射方法制备Zn1-xMnxO薄膜(0≤x≤0.25),并在不同温度下进行退火处理.通过原子力显微镜、薄膜X射线衍射、透射电子显微镜和透射光谱对薄膜的成分、表面形貌、微结构和光学性质进行了研究.结果表明,薄膜结晶质量明显地依赖于掺杂Mn元素的浓度,所有薄膜都表现了沿(002)晶面方向择优取向生长,当Mn...     

非织造基磁控溅射纳米银薄膜导电性能的研究

在室温条件下采用射频磁控溅射在丙纶(PP)、聚乳酸(PLA)熔喷非织造布表面生长纳米银(Ag)薄膜,并且用等离子体预处理样品进行对比。采用扫描电子显微镜(SEM)对其形貌进行表征,采用四探针测试仪对所制备的纳米薄膜的导电性能进行表征。研究溅射时间、孔隙率及孔径分布和等离子处理对非织造基纳米银薄膜的导电性能的影响。实验表明:随着反应溅射时间的增加,薄膜的方块电阻值下降,导电性能增加;孔径大小也影响薄膜的导电性能,随着孔径的增大,薄膜的导电性能降低;等离子体处理对织物表面进行刻蚀,增加了纤维的比表面积,提高了纤维的润湿性能,改善了织物的导电性能。     

Study of the structural and optical properties of GaPN thin films grown by magnetron RF sputtering

GaP_1−xN_x thin films were deposited on glass substrates by RF sputtering employing a nitrogen-argon atmosphere in a partial pressure of 2×10⁻² Torr. We varied the growth temperature in the range 420-520 °C. The film's optical properties were studied by transmittance and absorbance spectroscopy. Characterization by scanning electron microscopy in cross-sectional view, atomic force microscopy, and X-ray diffraction was performed to determinate the film thickness, surface morphology, and crystal structure, respectively. Raman spectroscopy was employed to analyze the structural properties of samples. The GaP_1−xN_x films presented a cubic polycrystalline structure with a preferential orientation along the [1 1 1] direction. By varying the growth conditions we were able to change the band gap energy between 1.35 and 1.98 eV.     

一种双真空室结构磁控溅射台的研制

本文研制了一种较高档的磁控溅射镀膜设备,用于微电子器件规模化生产过程中的基片表面镀膜.该设备采用双真空室结构,使溅射室始终维持较高的真空度和洁净度,提高镀膜质量和镀膜效率.环绕溅射室设计了3个直流靶和1个射频靶,能够溅射金属膜、介质膜、混合物和化合物薄膜.文中详述了该设备的设计原理、总体结构及工艺控制方法.该磁控溅射台已开发成功并投入使用,替代了同类进口设备.     

多组分掺杂ZnO陶瓷薄膜的射频磁控溅射法制备及表征

采用传统陶瓷烧结工艺,制备了直径为50mm,厚度为3 mm的Bi2O3、Sb2O3、CO2O3、Cr2O3、MnO2掺杂的ZnO陶瓷靶,采用所制备的ZnO陶瓷靶和射频磁控溅射技术在Si(111)衬底上成功制备出了ZnO陶瓷薄膜,并研究了溅射功率和退火温度对ZnO陶瓷薄膜的微观结构和表面形貌的影响.结果表明:随着溅射功率...     

Structural and optical properties of yttrium trioxide thin films prepared by RF magnetron sputtering

Yttrium trioxide (Y₂O₃) thin films have been deposited on silicon (111) at different RF powers and the sputtering pressures by RF magnetron sputtering. The influences of the RF power and the sputtering pressures on the structural and optical properties of Y₂O₃ thin films were investigated by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscope (AFM) and spectroscopic ellipsometer (SE). The results show that chemical composition of as-deposited Y₂O₃ film is apparently close to the stoichiometric ratio and it is crystallized but crystallinity is poor. The monoclinic and cubic fluorite-like structure can coexist in as-deposited Y₂O₃ film. A four-layer-structured optical model consisting of silicon substrate, silicon dioxide (SiO₂) interlayer, Y₂O₃ layer and a surface roughness (SR) layer is built for interpreting preferably the results measured by spectroscopic ellipsometry. With the increase of RF power or decrease of sputtering pressure, the refractive index and optical bandgap of sputtered Y₂O₃ film is increased and the extinction coefficients is decreased.