The effect of external cusp magnetic field on Ar ICP characteristics

In this paper, three permanent magnet rings, which were placed alternatively between the three antenna coils of a cylindrical inductively coupled radio frequency (rf) argon plasma for rf enhanced ionized magnetron sputtering system, were used to produce a closed magnetic field distribution with the magnetic field of the unbalanced magnetron sputtering to confine discharge plasma. Langmuir probe measurement was used to study the effect of the magnetic field on the plasma characteristics and their spatial distribution. The results show that the presence of the closed magnetic field leads to the increase of the ion density and the decrease of electron temperature and plasma potential. With the closed magnetic field, the plasma density distribution in radial direction will become more uniform.     

圆平面磁控溅射靶磁场的ANSYS模拟分析

磁控溅射靶面磁感应强度的水平分布直接关系到靶材的利用率和刻蚀的均匀性.为了寻求更好的磁控靶结构参数,从而实现靶而水平磁感应强度的均匀分布,作者应用ANSYS软件对SD500型磁控溅射镀膜机的圆平面靶表面磁感应强度进行模拟,应用SHT-V型特斯拉计通过同心十字线法对实物靶表面磁感应强度进行测试,将模拟结果与测量结果进行比较,证明其模拟的准确性.进而对圆平面磁控靶的结构参数进行优化设计,得出靶与磁钢间距为3 mm、磁钢高度为15 mm、内磁柱半径为4 mm、内磁柱高度为14 mm时靶面水平磁感应强度最强、分布最均匀.在工程应用中,设计人员可以预先对靶的参数进行优化设计,使设计的磁控溅射靶更好的满足生产和科学研究的需要.     

Influence of additional magnetic field on plasma parameters in magnetron sputtering

With three additional magnetic rings being assembled outside the discharge room and connected with the magnetic field of the conventional unbalanced magnetron sputtering, a closed magnetic field configuration distribution had been formed in the whole discharge room and which can confine discharge plasma more effectively. The spatial distribution of the newly designed magnetic field configuration was simulated using the ANSYS software. Plasma potential, electron temperature, electron density and ion density in the discharge plasma were diagnosed by Langmuir probe and the optical emission line intensity ratios of Ar⁺/Ar and Cu⁺/Cu were studied by optical emission spectroscopy. The structure and morphology of the Cu films are measured by scanning electron microscopy. A comparative study of the new magnetic field configuration with the conventional unbalanced magnetic field configuration was conducted. The results showed that the application of the additional magnetic field can increase the plasma density, enhance the ionization degree of the sputtered Cu and decrease the plasma potential effectively. The characteristics of the deposited Cu film were also influenced by the new magnetic field configuration greatly.     

Some features of magnetron sputtering

In a low pressure sputtering system of the magnetron type for depositing thin solid films, two different discharge modes occur: a positive space-charge-dominated mode and a negative space-charge-dominated mode. The positive space-charge-dominated mode predominates in a weak magnetic field of some few hundred gauss and is widely used for sputtering, although the current density is non-uniform at the cathode surface. The negative space-charge-dominated mode predominates in a strong magnetic field of more than several hundred gauss and is also used for sputtering since the mode shows uniform current distribution at the cathode surface.In the magnetron sputtering system the working pressure is so low that the scattering of sputtered atoms by gas molecules can be neglected. Thus energetic sputtered atoms impinge on the substrates during film growth. This causes some phenomena which are rarely observed in a conventional diode sputtering system, e.g. an abnormal surface texture and an unusual crystalline structure are found in the resultant sputtered films. There is evidence that thin films of compounds normally only formed at high temperature can be synthesized at lower substrate temperatures.     

Breakdown in planar magnetron discharges of argon on copper

In magnetrons the magnetic field confines partially the electron swarm in a trap near the cathode increasing sputtering yield and deposition rates. The magnetic field also decreases the ignition voltage even at relatively low pressures thus allowing sputtering at lower pressures. Under this conditions fewer collisions, less diffusion and less thermalization of the sputtered atoms occur during the transport to the substrates. Atoms arrive at substrates with larger energy and at higher rates.We present an experimental study of the magnetic field influence on the breakdown voltage in planar magnetron abnormal glow discharges for argon on copper. A magnetron cathode was constructed, with a finely tuneable magnetic configuration. The experimental curves of the breakdown voltage as a function of the discharge pressure at constant “confinement power” show minima similar to those occurring in Paschen's law. At lower pressures the breakdown voltage has a strong dependence on magnetic configuration and changes from 750 to 250 V can be found. At higher pressures the breakdown voltage is less sensitive to the magnetic field.Paschen's law could not be fitted to the experimental results and as alternative an empirical expression is proposed and its parameters discussed.The results can be understood by the increased length of the average electron path both in helical and cycloid type trajectories near the cathode and by the reduction of the electron drift towards the anode and the walls of the chamber. In the Townsend regime, before breakdown and fixed voltage the electron density near the cathode increases with the confinement power. This causes a higher flux and energy of the ions that strike on the cathode for the same applied voltage. The voltage needed to get the self-sustained discharge is strongly reduced.     

不同非平衡度磁场环境中溅射等离子体的诊断与分析

采用Langmuir探针对两种不同非平衡度磁场环境中(K值分别为2.78和6.41)的溅射等离子体进行诊断,并使用高斯仪测量靶材表面的磁感应强度,结合靶材表面磁场分布的Ansys软件模拟,分析了等离子体在非平衡磁场环境中的运动规律。结果表明:磁控阴极内侧(靶材表面中部)的溅射等离子体主要参数(离子密度、电子密度及电子温度)在两种不同非平衡度磁场中都具有随靶基距增大而逐渐减小的趋势,大量带电粒子从磁控阴极外端向远离靶材表面的区域运动;K为2.78时的等离子体参数在靶材表面的刻蚀环正上方60 mm范围内明显高于K为6.41时,前者靶材表面的磁感应强度大于后者;向外发散的磁力线数量随K值的增大而增多。     

DEM simulation analysis of the improvement in particle discharge flowability using adhesive force distribution models based on admixed particle coating

Particle flowability can be improved by admixing particles smaller than the original particles (main particles). However, the details of the mechanism of this improvement are not yet fully understood. In this study, we used a discrete element method simulation to investigate the effects on the particle flowability of the adhesive force distribution at each contact point based on the admixed particle coating. We used the non-uniform, random, and uniform surface adhesive force distribution models and calculated the discharge flow rates. The non-uniform models had a larger discharge flow rate compared with the other models because the non-uniform adhesive force distribution destabilized the force balance in the bed, and thus destabilized the particle arching structure, which generated discontinuous layers more frequently and improved the flowability. Consequently, in a smaller particle admixing system, the adhesive force distribution at each contact point would help to improve the flowability.     

板料电磁成形磁场力分布研究

为研究平板电磁成形中板料上磁场力的分布规律,基于 Ansys 软件建立了 3 D 电磁场有限元模型,分析了在一定放电脉冲作用下,当板料的平面尺寸小于或等于线圈的几何尺寸时,板料上感应电流和磁场力的分布规律。 结果表明,板料的几何尺寸小于或等于对应线圈尺寸会影响板料上感应电流和磁场力的分布,其中圆形线圈对称放置影响最大,矩形线圈单边放置影响较小,匀压力线圈影响最小。     

外加磁场对磁控溅射靶利用率的影响

通过在基片上直接放置一块永久磁铁来研究外加磁场对磁控溅射靶利用率的影响。实验发现 ,外加磁场的引入改变了靶表面附近的磁场分布 ,因而靶的刻蚀环的位置、宽度和深度均发生了明显的变化 ,靶的利用率在S S构型和S N构型中均比无外加磁场时要高。利用空间模拟磁场成功的解释这一实验现象。在S S构型和S N构型中 ,后者靶的刻蚀深度轮廓线比较平坦 ,相对刻蚀深度值更大 ,更能有效地提高靶的利用率     

Recapture of secondary electrons by the target in a DC planar magnetron discharge

In this paper we describe a simple two-dimensional model that allows the study of the individual secondary electron orbits in a DC planar magnetron discharge. Emphasis is on the recapture of secondary electrons by the target, which is enabled by their small initial energy, because this reduces the effective secondary electron yield as seen by the discharge. This reduction depends strongly on both the position along the race track and the gas pressure and it can be substantial for typical planar magnetron operating conditions. Our simple model allows to conclude that because of the sensitivity of the discharge on the secondary electron yield, the current-voltage characteristic, the spatial distribution as well as the pressure dependence of the planar magnetron discharge will be influenced by recapture.     

磁控溅射制备纳米TiO2薄膜导电性的研究

研究了在纳米厚度范围内，TiO2薄膜的导电性与薄膜厚度和基底材料的关系。利用射频磁控溅射方法，使用高纯Ti(99．99％)靶，通入Ar和O2的混合气体，制备了TiO2薄膜，薄膜膜厚15—225nm,在室温下测量了不同厚度TiO2薄膜的电阻率，发现TiO2薄膜的导电性，先后在导体、半导体和绝缘体范围变化。这归因于基底材料与TiO2的功函数不同，导致了界面电子的转移，功函数差决定了电子转移的深度。     

Effect of Enhanced Plasma Density on the Properties of Aluminium Doped Zinc Oxide Thin Films Produced by DC Magnetron Sputtering

Aluminum doped zinc oxide (AZO) thin films were prepared by DC magnetron sputtering at low substrate temperature. A coaxial solenoid coil was placed near the magnetron target to enhance the plasma density (Ji). The enhanced plasma density improved significantly the bulk resistivity (ρ) and its homogeneity in spatial distribution of AZO films. X-ray diffraction (XRD) analysis revealed that the increased Ji had inuenced the crystallinity, stress relaxation and other material properties. The AZO films deposited in low plasma density (LPD) mode showed marked variation in ρ (ranging from ～6.5×10?2 to 1.9×10-3 ·cm), whereas those deposited in high plasma density (HPD) mode showed a better homogeneity of films resistivity (ranging from ～1.3×10?3 to 3.3×10?3 ?·cm) at di?erent substrate positions. The average visible transmittance in the wavelength range of 500-800 nm was over 80%, irrespective of the deposition conditions. The atomic force microscopy (AFM) surface morphology showed that AZO films deposited in HPD mode were smoother than that in LPD mode. The high plasma density produced by the coaxial solenoid coil improved the electrical property, surface morphology and the homogeneity in spatial distribution of AZO films deposited at low substrate temperature.     

Effect of oxygen concentration and system geometry on the current-voltage relations during reactive sputter deposition of titanium dioxide thin films

Current-voltage relations at different magnetron sputtering systems and gas mixtures were studied during reactive sputter deposition of titanium dioxide thin films. The main goal of this work was to investigate the influence of reactive gas mixture (Ar + O₂) and system geometry on the electrical characteristics of the discharge. The geometries utilized were the conventional magnetron sputtering, hollow cathode magnetron sputtering and triode magnetron sputtering. A change in the system geometry leads to a change in the electric field distribution, which alters the working range of the discharge voltage and magnetron efficiency. It is noticed that the discharge voltage at constant current can be reduced when the geometry is altered from conventional magnetron to hollow cathode magnetron or triode magnetron, at the same time the magnetron efficiency is increased when hollow cathode magnetron or triode magnetron are used instead of conventional magnetron sputtering.     

磁控溅射原理的深入探讨

从更深层次--电子在非均匀电磁场中的运动规律,探讨了磁控溅射的更一般原理以及磁场的横向不均匀性及对称性是磁约束的本质原因.对工件温升、临界磁场、脱缚电子的能量及原因、刻蚀跑道断面形状的成因等作了分析.     

高温合金电磁软接触近净成形定向凝固研究

传统高温合金叶片类铸件制备过程中,熔体长时间受到陶瓷模壳材料的污染,性能难以提高,借助于电磁软接触成形技术中的电磁压力使高温合金熔体呈半悬浮状态,减少了熔体与磁模结晶器的接触面积和时间,提高了合金熔炼和成形的纯净度,同时将该技术和定向凝固技术相结合开发了一种实现高温合金复杂形状电磁软接触成形定向凝固的工艺,并探讨了该工艺下3种结晶器材料（陶瓷、磁模和石墨）中磁感应强度的分布规律,结果表明,石墨套高度对磁模结晶器磁感应强度的大小和分布以及熔体温度场有很大影响。通过调整上下线圈功率和抽拉速度等工艺参数成功地制备了大小两种近叶片形状的高温合金电磁软接触成形的定向凝固样件。．     

Characterization of CNx films prepared by twinned ECR plasma source enhanced DC magnetron sputtering

The DC discharge of a planar magnetron was enhanced by twinned microwave electron cyclotron resonance plasma source. The magnetic cusp geometry formed in the processing chamber was used for plasma confinement. The sputtering discharge characteristics was investigated and a combined mode of voltage and current was observed at a pressure as low as 0.007 Pa. Carbon nitride thin films were synthesized using this method. Characterization of the films showed that the deposition rate was high, and the films were composed of a single amorphous carbon nitride phase with N/C ratio close to that of C₃N₄, with the bonding mainly of C---N type.     

磁控溅射制备纳米TiO2薄膜导电性的研究

研究了在纳米厚度范围内,TiO₂薄膜的导电性与薄膜厚度和基底材料的关系.利用射频磁控溅射方法,使用高纯Ti(99.99％)靶,通入Ar和O₂的混合气体,制备了TiO₂薄膜,薄膜膜厚15～225nm.在室温下测量了不同厚度TiO₂薄膜的电阻率,发现TiO₂薄膜的导电性,先后在导体、半导体和绝缘体范围变化.这归因于基底材料与TiO₂的功函数不同,导致了界面电子的转移,功函数差决定了电子转移的深度.     

Rotatable magnetron sputtering of aluminium in continuous and high power pulse modes using different strength magnetic arrays

This paper reports preliminary results of industrial size (152 mm target O.D.) rotatable magnetron sputtering of Al target in direct current (DC) and High Power Impulse Magnetron Sputtering (HIPIMS) modes using two standard commercially available magnetic arrays: standard strength array (as used for DC and AC processing) and a lower strength ‘RF’ array [i.e. as used for radio frequency (RF) magnetron sputtering]. A comparison of processes resulted in by combining the different magnetic arrays and power modes is made in terms of magnetic field distribution on the cathode surface, magnetron characteristics, process characteristics and deposition rates.Optical emission spectroscopy (OES) revealed enhanced sputtered Al flux ionisation in the HIPIMS discharge monitored 64 mm away from the target surface when using the ‘RF’ array. Importantly, the results of this work (at the processing conditions investigated) demonstrate that at the same average power the deposition rate of Al using HIPIMS in conjunction with the ‘RF’ array is substantially the same as that obtained for the ‘standard’ strength balanced array and DC power. This indicates that the magnetic field design of the ‘RF’ magnetic array affects favourably the sputtered flux transport perpendicular to the target surface by altering mass transport direction and minimising effects that reduce deposition rate (e.g. ion return effect). Arc rate is also reduced significantly (approximately ten times) if the low strength ‘RF’ array is used.     

磁控溅射矩形靶磁场的优化设计

磁控溅射靶材的利用率在降低生产成本中起着重要作用.正交的靶电磁场能显著地延长电子的运动路程,增加同工作气体分子的碰撞几率,提高等离子体密度,使磁控溅射速率数量级的提高,因此靶面正交电磁场的分布将决定靶的烧蚀情况.提出了2种改善矩形平面靶磁场分布的方法,经过分析,这2种设计将拓宽靶面的刻蚀范围,提高靶材的利用率.     

Finite element simulation and experimental research on ZnO:Al by magnetron sputtering

Aluminum doped zinc oxide (ZnO:Al) thin films are suitable for the use as transparent conductive electrode in copper indium gallium selenide Cu(In,Ga)Se₂ thin film solar cells. The resistivity and film quality of ZnO:Al deposited on soda lime glass is nonuniform in magnetron sputtering process. According to the measurement results of magnetic field on the top of the target, obvious magnetic field distribution nonuniformity is observed along the vertical and horizontal directions respectively. With the longer distance between target and substrate, the magnetic field intensity becomes lower and flatter between the two magnet poles. Based on the simulation results by finite element analysis, it is verified the nonuniformity of magnetic field distribution influences the probability of Ar⁺ particles collision and the deposition of zinc oxide (ZnO) particles in different regions on substrate. The higher resistivity of ZnO:Al films is obtained where the magnetic field intensity is stronger.