CdS quantum dot sensitized nanocrystalline Gd-doped TiO2 thin films for photoelectrochemical solar cells

CdS quantum dot sensitized Gd-doped TiO₂ nanocrystalline thin films have been prepared by chemical method. X-ray diffraction analysis reveals that TiO₂ and Gd-doped TiO₂ nanocrystalline thin films are of anatase phase. The absorption spectra revealed that the absorption edge of CdS quantum dot sensitized Gd-doped TiO₂ thin films shifted towards longer wavelength side (red shift) when compared to that of CdS quantum dot sensitized TiO₂ films. CdS quantum dots with a size of 5 nm have been deposited onto Gd-doped TiO₂ film surface by successive ionic layer adsorption and reaction method and the assembly of CdS quantum dot with Gd-doped TiO₂ has been used as photo-electrode in quantum dot sensitized solar cells. CdS quantum dot sensitized Gd-doped TiO₂ based solar cell exhibited a power conversion efficiency of 1.18 %, which is higher than that of CdS quantum dot sensitized TiO₂ (0.91 %).     

Efficient Mn-doped CdS quantum dot sensitized solar cells based on SnO2 microsphere photoelectrodes

Mn-doped CdS quantum dot sensitized solar cells based on SnO₂ microsphere photoelectrodes are prepared with successive ionic layer adsorption and reaction method. It is found that with Mn-doped CdS quantum dot sensitizers, the photovoltaic performance of the cells based on SnO₂ microsphere photoelectrodes can obviously be enhanced. The reasons are owing to the improved light absorption and the expanded light absorption edge by doping Mn in CdS quantum dots. The electrochemical impedance spectroscopy analysis found that the cells with Mn-doped CdS quantum dot sensitized SnO₂ microsphere photoelectrodes can efficiently suppress dark reaction, owing to the increased related resistance. Moreover, it is also found that the Mn-doped CdS quantum dot sensitized SnO₂ microsphere photoelectrode can increase the electron diffusion lifetime in the cell. The power conversion efficiency of the cell with 4 wt% Mn-doped CdS quantum dot sensitizers can attain to 2.80 %, with 53 % enhancement compared with that of the CdS quantum dot sensitized cell (1.83 %).     

TiO2 inverse opal based CdS/CdSe quantum dot co-sensitized solar cells

CdS and CdSe quantum dots were introduced as co-sensitizers into TiO₂ inverse opal quantum dot sensitized solar cells. Herein, the three-dimensionally ordered porous TiO₂ inverse opal film leads to a better infiltration of both sensitizers and hole transporting material, and the smaller surface area of TiO₂ inverse opal film is effectively offset by the incorporating of co-sensitization. It was found that the presence of CdS/CdSe co-sensitizers provides enhanced light absorption, and leads to a lower recombination rate of the electrons due to the stepwise structure of band edge in TiO₂/CdS/CdSe, which resulted in the observed enhanced photocurrent and energy conversion efficiency of the solar cells. A cell efficiency of 1.01 % has been attained.     

Enhanced photovoltaic performance of solar cell based on front-side illuminated CdSe/CdS double-sensitized TiO2 nanotube arrays electrode

Free-standing TiO₂ nanotube (NT) arrays have been prepared by a two-step anodization method. These translucent TiO₂ NT arrays can be transferred to the fluorine-doped tin oxide glass substrates to form front-side illuminated TiO₂ NT electrodes. The TiO₂ NT electrodes were double-sensitized by CdSe/CdS quantum dots (QDs) through successive ionic layer adsorption and reaction (SILAR) process. The absorption range of the TiO₂ NT electrode was extended from ~380 to 700 nm after sensitization with CdSe/CdS QDs. The SILAR cycles were investigated to find out the best combination of CdS and CdSe QDs for photovoltaic performance. The power conversion efficiency of 2.42 % was achieved by the CdSe(10)/CdS(8)/TiO₂ NT solar cell. A further improved efficiency of 2.57 % was obtained with two cycles of ZnS overlayer on the CdSe(10)/CdS(8)/TiO₂ NT electrode, which is 45.19 % higher than that of back-side illuminated solar cell. Furthermore, the ZnS(2)/CdSe(10)/CdS(8)/TiO₂ NT solar cell possesses a higher stability than CdSe(10)/CdS(8)/TiO₂ NT solar cell during the same period. The better photovoltaic performance of the ZnS(2)/CdSe(10)/CdS(8)/TiO₂ NT solar cell has demonstrated the promising value to design quantum dots-sensitized solar cells with double-sensitized front-side illuminated TiO₂ NT arrays strategy.     

Chemical synthesis of CdS onto TiO2 nanorods for quantum dot sensitized solar cells

A quantum dot sensitized solar cell (QDSSC) is fabricated using hydrothermally grown TiO₂ nanorods and successive ionic layer adsorption and reaction (SILAR) deposited CdS. Surface morphology of the TiO₂ films coated with different SILAR cycles of CdS is examined by Scanning Electron Microscopy which revealed aggregated CdS QDs coverage grow on increasing onto the TiO₂ nanorods with respect to cycle number. Under AM 1.5G illumination, we found the TiO₂/CdS QDSSC photoelectrode shows a power conversion efficiency of 1.75%, in an aqueous polysulfide electrolyte with short-circuit photocurrent density of 4.04 mA/cm² which is higher than that of a bare TiO₂ nanorods array.     

Double-sided transparent electrodes of TiO2 nanotube arrays for highly efficient CdS quantum dot-sensitized photoelectrodes

A novel double-sided CdS quantum dots-sensitized TiO₂ nanotube (TNT)/ITO photoelectrode is fabricated to improve the energy conversion efficiencies of quantum dots-sensitized solar cells (QDSCs). Our experimental results show that the double-sided CdS quantum dots-sensitized TNT/ITO photoelectrodes show enhanced light absorption. As a consequence, the photoelectrochemical response of the CdS/TNT/ITO photoelectrode is much improved compared with single-sided CdS sensitized TNT arrays on Ti substrate (i.e., CdS/TNT/Ti photoelectrode). An optimum conversion efficiency of 7.5 % is achieved by the double-sided CdS(15)/TNT/ITO photoelectrode, which is an enhancement of about 120 % when compared with the single-sided CdS/TNT/Ti photoelectrode. Our results demonstrate that the energy conversion efficiencies of QDSCs can be improved by designing a new photoelectrode structure.     

Bandgap Tuning with Thermal Residual Stresses Induced in a Quantum Dot

Lattice distortion induced by residual stresses can alter electronic and mechanical properties of materials significantly. Herein, a novel way of the bandgap tuning in a quantum dot (QD) by lattice distortion is presented using 4‐nm‐sized CdS QDs grown on a TiO₂ particle as an application example. The bandgap tuning (from 2.74 eV to 2.49 eV) of a CdS QD is achieved by suitably adjusting the degree of lattice distortion in a QD via the tensile residual stresses which arise from the difference in thermal expansion coefficients between CdS and TiO₂. The idea of bandgap tuning is then applied to QD‐sensitized solar cells, achieving ≈60% increase in the power conversion efficiency by controlling the degree of thermal residual stress. Since the present methodology is not limited to a specific QD system, it will potentially pave a way to unexplored quantum effects in various QD‐based applications.     

Optimization of CdSe layer on modified ZnO hierarchical spheres by spin-SILAR for efficient CdS/CdSe co-sensitized solar cells

In this study, after CdS quantum dots sensitized ZnO hierarchical spheres (ZnO HS), we used a simple process to deposit CdSe QDs on ZnO by spin-coating-based SILAR, and applied to photoanodes of quantum dots-sensitized solar cells. Before CdS and CdSe QDs deposition, the ZnO HS photoanodes were modified by Zn(CH₃COO)₂·2H₂O methanol solution to further enhance the open-circuit voltage and power conversion efficiency (PCE). The program of modifying photoanodes and the number of CdSe spin-SILAR cycles are evaluated on the optical and electrochemical properties of the cells. As a result, a high energy conversion efficiency of 2.49 % was obtained by using modified ZnO HS/CdS photoanode under AM 1.5 illumination of 100 mW cm^?2. And further decorated by the CdSe QDs, the ZnO HS/CdS/CdSe cell achieved a PCE of 5.36 % due to the modification of ZnO HS nanostructure, the enhanced absorption in the visible region, the lower recombination reaction and higher electron lifetime.     

Dye-sensitized solar cells with natural dyes extracted from rose petals

Nanocrystalline TiO₂ dye-sensitized solar cells have been fabricated using TiO₂ photoelectrode sensitized using the extracts of red rose and table rose as natural sensitizers and their characteristics have been studied. The extracts having anthocyanin pigment (pelargonidin, peonidin and cyanidin), which have hydroxyl and carboxylic groups in the molecule can attach effectively to the surface of TiO₂ film. The solar cell constructed using the red rose sensitized TiO₂ photo-electrode exhibited a short-circuit photocurrent of 4.57 mA/cm² and a power conversion efficiency of 0.81 % and that of table rose sensitized TiO₂ photo-electrode exhibited a short-circuit photocurrent of 4.23 mA/cm² and a power conversion efficiency of 0.67 %. Natural dye sensitized TiO₂ photo electrodes present the prospect to be used as an environment-friendly, low-cost alternative system.     

Investigations on the morphology,optical and photoresponse properties of PbS/CdS binary colloidal quantum dot thin film

Binary thin film exhibits not only the quantum features of the individual building blocks but also novel collective properties through coupling of colloidal quantum dot components. In this paper, lead sulfide (PbS) and cadmium sulfide (CdS) colloidal quantum dots (CQDs) were synthesized by using oleate and oleylamine as ligand. The as-synthesized PbS and CdS CQDs were monodispersity and well passivation. The average diameter of as-synthesized PbS and CdS CQDs were about 3 nm and 6 nm, respectively. By blending PbS with CdS CQDs and utilizing ethanedithiol for ligand passivation, the responsivity and detectivity of PbS CQDs thin film was enhanced with the weight ratio of CdS CQDs increased, the optimum responsivity and detectivity were 21.9 mA/W and 2.1 × 10¹⁰ Jones, respectively. The desirable properties of binary colloidal quantum dot thin films have important applications in future electronic and optoelectronic devices.     

TiO2 nanowires sensitized with CdS quantum dots and the surface photovoltage properties

TiO₂ nanowires prepared by thermal annealing of anodized Ti foil were sensitized with CdS quantum dots (QDs) via chemical bath deposition (CBD). Microstructural characterizations by SEM, TEM and XRD show that the CdS nanocrystals with the cubic structure have intimate contact to the TiO₂ nanowires. The amount of CdS QDs can be controlled by varying the CBD cycles. The experiment results demonstrate that the surface photovoltage (SPV) response intensity was significantly enhanced and the surface photovoltage response region was also expanded obviously for the TiO₂ NWs sensitized by CdS QDs.     

Enhancing photovoltaic performance of photoelectrochemical solar cells with nano-sized ultra thin Sb2S3-sensitized layers in photoactive electrodes

Sb₂S₃-sensitized photoelectrochemical solar cells were prepared with photoactive electrodes containing thick and thin Sb₂S₃-sensitized layers, polyaniline hole conductor containing little amount of de-ionized water, and Pt counter electrodes. The device with the thin Sb₂S₃-sensitized layer shows much higher power conversion efficiency (3.78 %) than that of the device with the thick Sb₂S₃-sensitized layer (0.88 %). The FESEM and TEM images reveal that the device with the thin Sb₂S₃-sensitized layer is nanostructure, as that of the traditional quantum dot sensitized solar cell, while the device with the thick Sb₂S₃-sensitized layer is flat configuration. The photoactive electrode with the thin Sb₂S₃-sensitized layer shows higher light absorption, lower charge transfer resistance and longer electron lifetime compared with that of the one with the thick Sb₂S₃-sensitized layer, which results in higher photocurrent generation of the device.     

Dye modification with photovoltaic enhancement for CdS quantum dots sensitized solar cell based on three-dimensional ZnO spheres

A large amount of ZnO with a three-dimensional sphere-like morphology has been synthesized by a facile hydrothermal route and applied as the photoanode material in CdS quantum dots sensitized solar cells (QDSSCs). After the modification of the dye co-sensitized process, an overall power conversion efficiency of 2.32 % with a short-circuit current density of 9.25 mA/cm² was obtained in ZnO/CdS/dye-QDSSC, which shows 66.9 and 49.4 % respective improvement over that of pure ZnO/CdS–QDSSC. This result is attributed to its superiority in light absorption and charge–hole separation for the ZnO/CdS/dye-QDSSC.     

Enhanced photoelectrochemical properties of TiO2 nanorod arrays decorated with CdS nanoparticles

TiO₂ nanorod arrays (TiO₂ NRAs) sensitized with CdS nanoparticles were fabricated via successive ion layer adsorption and reaction (SILAR), and TiO₂ NRAs were obtained by oxidizing Ti NRAs obtained through oblique angle deposition. The TiO₂ NRAs decorated with CdS nanoparticles exhibited excellent photoelectrochemical and photocatalytic properties under visible light, and the one decorated with 20 SILAR cycles CdS nanoparticles shows the best performance. This can be attributed to the enhanced separation of electrons and holes by forming heterojunctions of CdS nanoparticles and TiO₂ NRAs. This provides a promising way to fabricate the material for solar energy conversion and wastewater degradation.     

Preparation, optical properties and solar cell applications of CdS quantum dots synthesized by chemical bath deposition

We reported on temperature-dependent photoluminescence (PL) studies of CdS quantum dots (QDs, ~5 nm in diameter) grown onto TiO₂ nanorod arrays by chemical bath deposition. By constructing a liquid-junction solar cell, a power conversion efficiency of 0.88 % was demonstrated. In addition, we observed anomalous emission behavior, specifically a ‘Λ’-shaped (blueshift–redshift) temperature dependence of the peak energy for CdS related PL with increasing temperature. From a study of the integrated PL intensity as a function of temperature, it was revealed that thermionic dissociation of excitons (carriers) out of local potential minima into higher energy states was the dominant mechanism leading to the quenching behavior of the QDs related PL. At 110 K, the localized excitons were totally dissociated and converted to the free excitons. Our results shed light on the exciton-dissociation process in CdS QDs and can be used for the proposed solar cell application.     

Metal Oxide Semiconductors for Dye‐ and Quantum‐Dot‐Sensitized Solar Cells

This Review provides a brief summary of the most recent research developments in the synthesis and application of nanostructured metal oxide semiconductors for dye sensitized and quantum dot sensitized solar cells. In these devices, the wide bandgap semiconducting oxide acts as the photoanode, which provides the scaffold for light harvesters (either dye molecules or quantum dots) and electron collection. For this reason, proper tailoring of the optical and electronic properties of the photoanode can significantly boost the functionalities of the operating device. Optimization of the functional properties relies with modulation of the shape and structure of the photoanode, as well as on application of different materials (TiO₂, ZnO, SnO₂) and/or composite systems, which allow fine tuning of electronic band structure. This aspect is critical because it determines exciton and charge dynamics in the photoelectrochemical system and is strictly connected to the photoconversion efficiency of the solar cell. The different strategies for increasing light harvesting and charge collection, inhibiting charge losses due to recombination phenomena, are reviewed thoroughly, highlighting the benefits of proper photoanode preparation, and its crucial role in the development of high efficiency dye sensitized and quantum dot sensitized solar cells.     

Pb/S/1,2-ethanedithiol composite thin films for efficient solid-state quantum-dot sensitized TiO<Subscript>2</Subscript> nanorod array solar cells

The Pb/S/1,2-ethanedithiol composite thin films were successfully deposited on TiO₂ nanorod arrays by spin-coating step-by-step 5 mmol dm^?3 Pb(NO₃)₂, Na₂S and 1% 1,2-ethanedithiol solution and their chemical compositions can be easily adjusted by changing the concentration of Na₂S solution from 5 to 3.5 mmol dm^?3 and 2 mmol dm^?3. The average crystal sizes of Pb/S/1,2-ethanedithiol quantum-dots decreased from 7.9 to 7.1 nm and 6.5 nm with the decrease of the concentration of Na₂S solution and the chemical bonding of Pb²⁺ and S in EDT was chelation of the penta-heterocycle in Pb/S/1,2-ethanedithiol composite thin films. All solid-state Pb/S/1,2-ethanedithiol composite thin film sensitized TiO₂ nanorod array solar cells using 5, 3.5, 2 mmol dm^?3 Na₂S solution exhibited the photoelectric conversion efficiency of 2.68, 3.41 and 4.51% under the illumination of simulated AM 1.5 sunlight (100 mA cm^?2).     

Close-space sublimation grown CdS window layers for CdS/CdTe thin-film solar cells

We report on the synthesis and characterization of CdS window layers grown by close-space sublimation (CSS) method for CdS/CdTe thin-film solar cells. Comparing with CdS window layers grown by other methods such as sputtering and chemical bath deposition, CSS-grown CdS layers can facilitate the consumption of CdS layers and suppress the diffusion of Te into CdS window layers. CSS-grown CdS layers exhibit much larger grains with faceted morphology. Due to large grains, CSS CdS layers must be grown thick enough to minimize the effects of pin-holes. The use of thicker CdS layer causes reduced blue response, resulting in current loss. Therefore, the thickness of CSS CdS window layer must be carefully optimized to achieve high efficiency. Our best small area dot cell using a CSS CdS window layer has exhibited a cell efficiency of about 14.2 % with an open circuit voltage (V_OC) of 806 mV, a short circuit current (J_SC) of 25.2 mA/cm², and a fill factor (FF) of 69.8 % under AM1.5 illumination and without an antireflection coating, slightly lower than our best reference cell using a sputtered CdS window layer (V_OC = 845 mV, J_SC = 24.5 mA/cm², FF = 76.8 %, and efficiency = 15.8 %).     

Formation and properties of cadmium sulfide buffer layer for CIGS solar cells grown using hot plate bath deposition

In the present study, cadmium sulfide (CdS) thin films were deposited on different substrates [soda glass, fluoride doped tin oxide, and tin doped indium oxide (ITO) coated glass] by a hot plate method. To control the thickness and the reproducibility of the sample production, the thin films were coated at different temperatures and deposition times. The CdS thin films were heated at 400 °C in air and forming gas (FG) atmosphere to investigate the effect of the annealing temperatures. The thickness of the samples, measured by ellipsometry, could be controlled by the deposition time and temperature of the hot plate. The phase formation and structural properties of CdS thin films were studied by X-ray diffraction and scanning electron microscopy, whereas the optical properties were obtained by UV–vis spectroscopy. A hexagonal crystal structure was observed for CdS thin films and the crystallinity improved upon annealing. The structural and optical properties of CdS thin films were also enhanced by annealing at 400 °C in FG atmosphere (95 % N₂, 5 % H₂). The optical band gap was changed from 2.25 to 2.40 eV at different annealing temperatures and gas atmospheres. A higher electrical conductivity, for the sample annealed at FG, was noticed. The samples deposited on ITO and annealed in FG atmosphere showed the best structural and electrical properties compared to the other samples. CdS thin films can be widely used for application as a buffer layer for copper–indium–gallium–selenide solar cells.     

A novel method for fabrication of CdS quantum dot-sensitized solar cells

In this report, a novel and facile in situ gas–solid reaction method has been developed for the deposition of CdS quantum-dots (QDs) on a mesoscopic TiO₂ film. In the approach, cadmium nitrate solution was first coated on mesoporous TiO₂ films, and subsequently transformed into CdS QDs (with size about 2–3 nm) by reaction with hydrogen sulfide (H₂S) gas generated in a closed container at room temperature. Different from the conventional solution techniques, this method offers new opportunities for rapid and facile deposition of CdS QD-coated TiO₂ films without the introduction of the by-products. With the CdS QDs-decorated TiO₂ active electrodes, the liquid and solid solar cells were fabricated with power conversion efficiencies (PCEs) of 1.90 and 0.80%, respectively.