X波段带状注速调管注波互作用系统的3维PIC模拟

带状注速调管是采用宽高比值很大的薄矩形注来降低空间电荷效应,采用特殊的高频结构来增加功率容量,从而使注波互作用效率得到提高的一种新型微波电真空器件.本文对工作在π模状态下的X波段带状注速调管三间隙腔进行了模拟计算,并对由该型腔体构成的注波互作用系统进行了3维PIC模拟,给出了初步的模拟设计结果.模拟结果表明:在电子注电压为415kV,电流为250A时,该速调管可以获得大于29.6MW的输出功率、34.3dB的增益以及29.6%的效率.     

双电子注高次模折叠波导慢波结构注波互作用仿真分析

提出了一种工作于220 GHz的双电子注高次模折叠波导慢波结构,该结构由四段慢波线组成,各段之间通过衰减器进行连接。文章首先计算了该结构的色散特性,其次利用CST模拟软件对其注波互作用特性进行了仿真分析:该结构工作模输出信号稳定,增益为33.1 d B。最后讨论了在电子注直流发射模型中,能量离散、角度离散、电子注电压差异三个仿真参量改变时,输出信号增益随参量的变化关系。通过对参量变化的分析,希望为器件的制造提供参考。     

W波段带状注扩展互作用速调管三维MAGIC研究

带状注扩展互作用速调管通过采用宽高比值很大的带状电子注来降低空间电荷效应,采用多间隙结构来增加功率容量,是一种高频率、高功率的微波真空放大器件。本文利用CST Microwave Studio与MAGIC设计了2π模W波段带状注五间隙扩展互作用谐振腔,重点研究了五间隙谐振腔关键结构参数对谐振腔特性阻抗与谐振频率的影响,并对器件稳定性与带状注双腔速调管注波互作用特性进行了三维MAGIC仿真与分析。最后,在电子注电压为19.5 kV,电流为3.5 A时,获得大于8 kW的输出功率、23 dB左右的增益。     

同轴腔高功率多注速调管注-波互作用系统的模拟设计

以同轴腔高功率多注速调管为研究对象,以大信号程序KLY及PIC粒子模拟软件对其多电子注-波互作用系统开展了一维初始设计、二维等效设计及全三维模拟设计.通过采用二次谐波腔技术及参数优化,使同轴腔注-波互作用系统达到了70％以上的计算效率.与传统长漂移管方案注-波互作用系统相比,二次谐波腔方案不仅可以获得较高的注-波互作用效率,并且其系统长度可比传统方案缩短35％,有利于器件小型化.文中给出了以单通道圆柱腔代替多通道同轴腔的注-波互作用系统二维等效快速计算方法,与一维及三维计算结果的对比表明,这种方法具有较高的计算精度.     

基于电子注嵌入光栅的0.55 THz返波振荡器的结构设计与注波互作用的分析

根据矩形栅慢波结构的色散公式初步确定各结构参数,并分析了各结构参数的变化对色散曲线的影响,用CST微波工作室仿真,计算并对比分析嵌入与未嵌入圆形电子注的高频特性的变化趋势,得出前者对应的色散曲线和耦合阻抗曲线要大于后者的结论。利用CST粒子工作室进行注波互作用模拟,权衡起振时间和输出功率关系,确定整管的仿真长度。研究了电子注嵌入深度、填充比、电流大小对输出功率的影响,优化结构参数,最终得到14. 6 W的稳定输出功率,与Magic计算出的结果相吻合。     

220 GHz三注折叠波导慢波电路的设计与仿真

本文设计了220 GHz三注折叠波导慢波电路,并对其放大特性进行了分析。利用等效电路法对慢波电路结构色散特性与轴向耦合阻抗进行了计算,并通过三维高频仿真软件HFSS进行了模拟验证。利用三维电磁仿真软件CST-PS的PIC求解器对该慢波结构的三维大信号的注波互作用进行了粒子仿真,结果表明:在工作中心频率为220 GHz时,三注折叠波导慢波电路输出功率达到49.7 W,增益达到了37.05 dB,3 dB带宽为13 GHz(212~225 GHz)。最后分析了边缘电子注的注电压和注电流的减小对该结构放大性的影响。     

盘荷波导结构高频特性分析及其在高功率速调管中的应用

以周期边界法、谐振法以及微扰法分别对盘荷波导结构色散特性、耦合阻抗进行分析,研究了不同结构参数下盘荷波导结构高频特性的变化规律.设计了C波段π/2模速调管盘荷波导输出结构,对其注-波互作用开展了PIC粒子模拟.计算结果表明,相对于传统单间隙圆柱输出腔,盘荷波导输出结构可以在获得高效率的同时显著降低输出间隙场强.     

多注耦合腔慢波结构冷测特性研究

对多注耦合腔慢波结构的色散和耦合阻抗特性参数的计算分析方法进行了讨论,特别是边注耦合阻抗的模拟算法.利用准周期边界条件计算了Ku波段五注耦合腔慢波结构色散特性,直接通过定义式得到了-1次谐波纵向电场分布和5个电子注的耦合阻抗曲线.比较了垂直于电子注传播方向截面上x、y坐标轴上电场Ez的分布,以及各电子注耦合阻抗的差别与变化趋势,分析讨论了多注电子耦合阻抗的特点,对实际多注耦合腔行波管设计有一定指导意义.     

同轴交错双栅行波管三维频域非线性注波互作用计算和比较

建立了同轴交错双栅行波管三维频域非线性注波互作用模型和公式。通过利用仿真软件求解渐变衰减材料对波的衰减特性,并与本文模型和公式结合编入非线性计算程序,使程序中对渐变/跳变衰减对注波互作用影响有更准确的求解。在小结构横截面保证商业软件计算容量允许条件下,比较了本文程序与仿真软件计算的注波互作用结果,并在相对大尺寸下设计了Ka波段同轴交错双栅行波管,以证实模型的合理性和在高频率产生高功率的可能性。     

多间隙耦合腔注波互作用计算分析

根据空间电荷波理论,利用微波等效传输线的概念,建立了多间隙耦合腔中注波互作用的小信号计算模型。同时,还基于电子圆盘模型,建立了相应的一维大信号计算模型。依据模型编写了计算机程序进行了计算模拟,结果显示,小信号模型能较好地反映整管的增益频率特性。一维大信号模型能合理地模拟注波互作用的基本物理过程。另外利用电路反馈的理论,分析了多间隙耦合腔的稳定性,并利用奈奎斯特稳定判据给出了耦合腔稳定条件。     

电子束退火制备二硼化镁超导薄膜的可行性研究

提出了电子束退火制备MgB2超导薄膜新工艺。在对电子束退火制备MgB2超导薄膜可行性进行理论研究的基础上,使用EBW-6型电子束热处理设备,在真空度5.0×10-3Pa、加速电压40 kV、束流2mA、束斑14.2mm、退火时间1.5 s的条件下对[B(10 nm)/Mg(15 nm)]4/SiC夹层结构前驱膜进行了退火实验,得到了零电阻温度为30.3K、转变宽度ΔTc为0.4K、临界电流密度(5 K、0 T)为5.0×106A/cm2、表面平整的MgB2超导薄膜。证明了电子束退火制备MgB2薄膜是切实可行的。该工艺可以推广到大面积MgB2超导薄膜和MgB2线带材的制备。     

Secondary‐Emission signal for weld formation monitoring and control in eletron beam welding (EBW)

The process of emission of term electrons from the zone of effect of the electron beam are analyzed. During the experiments, the samples of stainless steel and titanium alloy were welded. Experiments were conducted to examine the spectrum of oscillations of the secondary current at various values of the specific power of the electron beam. The conducted research showed that the signal spectrum of the secondary current in electron beam welding contains a characteristic high‐frequency (15…?25 kHz) component. It was established that the described frequency spectrum is not created by some control system in the electron beam machine and reflects the oscillations in the system – «keyhole‐plasma». Empirical density distribution of the high‐frequency signal was constructed in the amplitude range. It was shown that the parameters of the density distribution is closely linked with the nature of interaction between the beam with the metal and can be used for remote control of technology process.     

离子束溅射技术制备载体型PtCu/LaO_x双层膜电极的析氢电化学与结构分析

通过离子束溅射技术(IBS)制备了不同厚度比的PtCu/LaOx-C和LaOx/PtCu-C载体型双层膜电极;采用三电极体系测试了样品的阴极析氢极化曲线,并通过交换电流密度(i0)和分解电势(Ed)的求算结果优选出最优样品;采用XRD分析了最优样品的物相结构信息;采用SEM及EDS研究了各元素的含量分布。结果表明:PtCu层与LaOx层的沉积时间比为5∶5的PtCu/LaOx-C载体型双层膜电极析氢催化性能最优,平衡状态下的分解电势为-0.204(V vs SCE),交换电流密度达到了147.0μA/cm2;双层结构薄膜中,Cu与Pt形成了合金,而LaOx能降低Pt的晶粒尺寸,并促进Pt(111)择优取向生长。     

圆柱形阳极层霍尔推进器的工作特性与离子束流研究

主要对圆柱形阳极层霍尔推进器进行实验研究,得到推进器的工作特性、离子束分布、束流中电子的含量等结果。并且给出圆柱形阳极层霍尔推进器的最佳工作参数:工作电压在700~1000 V之间,电流在0.15~0.65 A,气体流量低于8 ml/min。从离子束流的径向分布可知:高电压、低电流、小气量时离子束的发散角较小。     

Investigation on the Tribology of Co Implanted Stainless Steel Using Metal Vapor Vacuum Arc Ion Source

AISI 304 stainless steel was ion implanted with Co, and the tribological property on the surface of the stainless steelwas investigated. The Co ion implantation was carried out using a metal vapor vacuum arc (Mevva) broad-beam ionsource with an extraction voltage of 40 kV, implantation doses of 3×10~(17)/cm~2 and 5×10~(17)/cm~2, and ion currentdensities of 13, 22 and 32μA/cm~2. The results showed that the near-surface hardness of Co-implanted stainless steelsample was increased by 50% or more, and it increased with increasing ion current density at first and then declined.The friction coefficient decreased from 0.74 to 0.20 after Co implantation. The wear rate after Co implantationreduced by 25% or more as compared to the unimplanted sample. The wear rate initially decreased with increasingion current density and then an increase was observed. Within the range of experimental parameters, there existsa critical ion current density for the Co-implanted stainless steel, at which the wear rate decreased     

High-current-density subnanosecond electron beams formed in a gas-filled diode at low pressures

The formation of electron beams in a gas diode filled with various gases at low and medium pressures under the action of nanosecond voltage pulses has been studied. It is shown that subnanosecond pulses of the beam current in helium, hydrogen, neon, nitrogen, argon, methane, sulfur hexafluoride, krypton, and xenon can be obtained both at atmospheric pressure and at a pressure of several units or dozens of Torr. In particular, a beam current density above 2 kA/cm² behind the foil at a pulse duration (FWHM) of 250 ps has been obtained in helium-filled diode. On the passage from the regime of ultrashort avalanche electron beam formation to the vacuum diode regime, the beam current pulse amplitude decreases, while both the beam pulse duration (FWHM) and the pulse front width increase.     

电子束钎焊接头组织分析

采用自主开发的电子束钎焊系统,对不锈钢毛细管板结构进行钎焊,通过电子探针显微分析仪研究了不同电子束钎焊规范下BNi-2钎料与管壁基体界面合金元素的分布,分析了钎料和界面区各相的化学组成.研究表明:在加速电压60kV,束流6.5 mA,加热时间37 s,扫描幅值O.5的电子束钎焊规范下,管板接头质量满足技术规范要求;随着电子束输入功率或功率密度增大,钎料和管壁的相互扩散作用增强,导致过渡层厚度增加,毛细管壁显著减薄;母材和钎料中合金元素的相互扩散导致过渡层的形成,过渡层主要由硼化铬、硼化镍和镍的固溶体组成.     

A water-soluble hybrid material of single-walled carbon nanotubes with an amphiphilic poly(phenyleneethynylene): preparation, characterization, and photovoltaic properties

A novel rigid linear polymer poly(phenyleneethynylene) (PPE) was synthesized and the polymer exhibits good solubility in both water and common organic solvents. The interaction at both ground and excited state between this polymer and single-walled carbon nanotubes (SWNTs) was studied and a water-soluble nano-scale PPE/SWNTs hybrid was fabricated, where the water solubility of SWNTs was enhanced to 1.8 mg/ml. Steady state fluorescence spectra and fluorescence lifetime decay measurements showed that the emissions from PPEs in this hybrid at excited state were efficiently quenched by the attachment of SWNTs, where an efficient energy transfer happened from PPEs to SWNTs as the electron acceptor. Using this hybrid as the active layer we fabricated a photovoltaic cell with the bulk heterojunction configuration, and it showed a photoresponse with an open circuit voltage (Voc) of 105 mV and a short circuit current density (Isc) of 28.7 microA/cm2 under standard AM 1.5 illumination (100 mW/cm2).     

The role of field emission in submicron electron beam testing

The resolution limit on electron beam testing of very-large-scale integrated circuits (ICs) using a low voltage (less than 2500 V) electron beam is reduced by the use of a high brightness Zr/W thermal-field emitter. Beam size measurements show that 10 nA of current can be delivered to a 0.20 μm focused spot at a beam voltage change 1350 V. Noise measurements show that the minimum detectable voltage change ΔV_m on the target is less than 10mV. Thus flicker noise in the Zr/W field emitter does not place a serious limit on ΔV_m. A high brightness field emission liquid metal ion source of Ga⁺ in conjunction with a simple single-lens focusing column can be used to sputter remove selectively small areas of the insulating passivation layer from ICs. Thus subsequent electron beam testing of these sites can be carried out without serious charging problems.     

SCLC diode thin film rate monitor

The injection of a vapour beam into a thermionic vacuum diode in a Kingdom cage type configuration modifies the diode characteristics considerably. The anode current increases on injection, the increase being dependent on the anode voltage. This is attributed to the partial neutralization of the space charge by the presence of positive ions in the vapour beam (produced by the electron bombardment in the Kingdon cage configuration). The increase in the plate current in the space charge region of the diode is linearly proportional to the number of atoms in the vapour beam for various metal evaporants at low rates of evaporation. A theory to explain the neutralization effect has been developed. The observed effect lends itself to a useful device to monitor the vapour beam density and, therefore, the evaporation and deposition rates of materials. Vapour beam densities as low as 10¹³/cm² sec and hence deposition rates as low as 0.1 Å/sec can be measured. Unlike the ionization gauge type of monitor, this device is not seriously affected by the presence of background (ambient) gases during vacuum evaporation.