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1.
一种电可擦写可读出的有机薄膜存储器件   总被引:2,自引:0,他引:2  
报道一种具有可逆电双稳特性的有机薄膜存储器件.器件采用三明治夹层结构Ag/DBCN/Al,DBCN为有机分子材料的简称.这种薄膜器件可以通过改变外加电场的大小来控制所处的状态,表现出高电压区(>6V)为高阻态(>106Ω),低电压区(1~2V)为低阻态(~103Ω)的特性,外电场消失时其状态能够长时间保持稳定(超过3个月),还可以用小电压脉冲信号(<0.5V)来读取其状态信息.此外还发现该器件具有良好的耐热稳定性.  相似文献   

2.
一种可擦写可读出的分子基电双稳器件   总被引:2,自引:0,他引:2  
报道一种可以连续可逆转换的分子基电双稳薄膜器件Ag/BN4/Al,其中BN4为分子材料.该器件在较强电场(约为6 V)作用下表现为高阻态("0"态),阻值大于105 Ω;而在较弱的电场(<2 V)作用下则为低阻态("1"态),阻值约为102 Ω,两种状态的阻抗比103~105.改变外加电场的大小,器件的两种状态随之发生多次转变,转换次数可超过103.高阻态和低阻态的状态信息还可以用一个小电压脉冲(0.2 V)来读取.这种简单器件具有可擦写可读出功能,可用于制作分子基开关和分子基存贮器.  相似文献   

3.
本文报道一种可连续可逆转换的有机电双稳薄膜器件,Al/TPR-1/Al/TPR-1/Al,其中TPR-1为有机分子材料,利用真空蒸发-紫外原位聚合的方法制作成膜.在器件中,两层交联的有机物中间夹一层很薄的铝膜.该器件在较低电压(<3V)作用时呈现高阻状态,阻值大于108Ω;而在较高电压(约5V)作用时,则为低阻态,阻值约为105Ω.两种状态的电阻值比为103~105.高低阻态均可通过一个较小的电压(1V)读出,并且低阻态可以用反向电压"擦除",回到高阻.  相似文献   

4.
报道一种基于CdSe量子点/聚乙烯基咔唑有机无机复合电双稳器件,通过对量子点浓度的控制使器件在室温下可以通过正向偏压和负向偏压脉冲激励下实现高阻态与低阻态的相互转变,相当于存储器件的写入功能与擦除功能,并且可实现重复的“读-擦-读-写”操作.对电流-电压曲线和电容-电压曲线展开讨论,验证器件的载流子捕获与释放机制,阐述载流子在该器件的输运机制.  相似文献   

5.
研究了BiFe0.95Mn0.05O3薄膜器件的双极性阻变效应。通过对薄膜器件的电流电压曲线进行电导机制的拟合分析,发现在低阻态时其电流电压关系遵循欧姆定律,而在高阻态时则满足指数分布陷阱控制的空间电荷限制电流规律。同时,还研究了限制电流对双极性阻变效应的影响,结果表明通过调节限制电流值,可以改变薄膜内形成的导电丝粗细,从而得到不同的低阻态,实现薄膜器件的多态存储功能。在导电丝理论的基础上,利用指数分布陷阱控制的空间电荷限制电流机理对这一现象进行了详尽的阐述。  相似文献   

6.
单一有机材料PAN的电双稳特性及其应用   总被引:7,自引:1,他引:6  
发现单一有机材料1-(2呢啶偶氮)-2-萘酚(PAN)在室温下即具有电双真空中的薄膜,两边在数伏电压的作用下,即可从高阻态变为代阻态,且跃迁时间小于10ns。由此可用为功能材料用于非易失性存贮器和过电压保护器等。  相似文献   

7.
一种新型的有机电双稳薄膜及其极性记忆效应   总被引:4,自引:0,他引:4  
报道了一种新的高稳定的有机分子(SCN)可以和铜构成具有电双稳态特性的金属有机络合物。由这种材料制成的薄膜,在室温6V电压作用下可以从高阻态转变成低阻态,其跃迁时间小于20ns,并具有极佳的热稳定性。因此可望用于制作电子器件,如一次写入存储器(WORM)等。进一步的研究还发现,在适当的工艺条件下,SCN能够与Cu和Al一起构成Cu-SCN-Al结,这种结具有极性记忆效应,即只能被单向驱动。  相似文献   

8.
金属有机络合物Ag-TCNQ的薄膜在STM针尖电场的作用下,当电压达到某一阀值后可以从高阴态跃迁至低阻态。在一定的条件下,在低阻态的保持时间很短,且高低阻间的转换可以重复。由于它们都是有机材料,根据这种特性,提出了一种新型有机纳米整流器的设想,并成功制作了输可控的有机纳米整流器的原型。  相似文献   

9.
金属有机络合物Ag TCNQ的薄膜在STM针尖电场的作用下 ,当电压达到某一阈值后可以从高阻态跃迁至低阻态。在一定的条件下 ,在低阻态的保持时间很短 ,且高低阻态间的转换可以重复。由于它们都是有机材料 ,根据这种特性 ,提出了一种新型有机纳米整流器的设想 ,并成功地制作了输出可控的有机纳米整流器的原型。  相似文献   

10.
模拟型阻变突触特性能够为神经形态计算提供高的计算精度并避免计算过程中带来的电导卡滞、跃变以及失效等问题。模拟生物突触在刺激脉冲下的行为,能够更好地揭示电子器件的仿生特性机理并为高性能神经形态计算提供支撑。突触双脉冲易化是生物突触的重要特性,反映了在外界刺激作用下的易化和适应性过程,对揭示神经元的工作机制至关重要。为了构建突触双脉冲易化的模拟型忆阻器件,本研究通过器件的能带结构设计及氧空位缺陷态的调控,利用射频磁控溅射法制备了一种结构为Ag/FeOx/ITO的忆阻器。电学测试结果表明,该器件具有优异的渐进递增的非线性阻变特性,即模拟型阻变特性。在I-V循环扫描3000次范围内,这种器件均表现出模拟型阻变特性,可提供稳定的、可分离的16个电导状态,且在104 s内维持良好,说明这些电导状态是非易失性的,这主要归功于电子在氧空位缺陷态中的捕获与去捕获以及在势垒间隧穿行为。但是,在低电场强度情况下,捕获的热电子有可能会跃迁出浅陷阱能级,而呈现出易失性。根据这种器件的易失性和非易失性共存特性,通过调制电压脉冲宽度、幅度,器件能够表现出很好的突触双脉冲易化特性,显示出该类型器件在神经形态计算中的潜...  相似文献   

11.
《Thin solid films》2006,494(1-2):287-290
V-doped SrZrO3 (SZO) thin films on LaNiO3/SiO2/Si substrate are synthesized by sol–gel method to form metal–insulator–metal (MIM) sandwich structure. The physical and electrical properties of the MIM device are studied. The structure and surface morphology of the SZO films are also characterized by X-ray diffraction and scanning electron microscopy. Such a device has the bistable switching properties of current–voltage characteristics. The resistive switching between high state and low state can also be operated with voltage pulses. The device with the properties of long retention time and non-destructive readout is expected to be suitable for nonvolatile memory application.  相似文献   

12.
介绍了一种测量直流高压电阻分压器泄漏电流的装置。该装置采用ZigBee无线通信技术,通过独立电源供电的方式,避免了因高压电场导致测量仪器损坏的风险,解决了分压器在高电压工作状态下难以测量泄漏电流的问题。通过采用同步采样的方法,有效克服了高压电源纹波和漂移对测量精度的影响,泄漏电流测量不确定度优于9.8×10-6 V,k=2。  相似文献   

13.
A switching from a high-conduction state to a low-conduction state occurs in an AIN thin film containing Al nanocrystals (nc-Al) when the nc-Al is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-AI as a result of the charging of the nc-Al. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-Al with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 106 read cycles, and its retention time is predicted to be more than 10 years.  相似文献   

14.
This paper proposes a unique device that uses a constant-current source to demonstrate a new superconductivity concept. This device is considerably different from conventional superconductors, and is based on the idea that the voltage that produces Joule heating can be in proportion to the voltage derived from the line integral of an internal electric field employing a condenser when the current is supplied to a doped semiconductor by a current source. In this case, the charge-carrier concentration is spatially nonuniform. The concentration gradient of the current source leads to diffusion of the charge carriers, and the motion of these carriers contributes to the current density. An electric field is not needed to move the charge carriers, because they move by diffusion and not by drift. Because the voltage associated with Joule heating is proportional to the voltage of the internal electric field, the total voltage in the semiconductor is zero; however, the current carried from the current source prevents the total current from being zero. We show that this property of the device results in a superconducting state arising from the diffusion-current state. In our theoretical analysis, we demonstrate that two electrons in the device form a pair and that Bose?CEinstein condensation of all pairs is produced. From this result, we derive the existence of a superconducting current without voltage. Furthermore, we have developed an experimental setup and confirmed zero electric resistance and energy emission from the semiconductor. Therefore, we conclude that a new type of superconductivity had been achieved. This phenomenon was observed multiple times and thus can be reproduced.  相似文献   

15.
Electrochromic switchable mirrors can be reversibly changed between a reflective state and a transparent state by applying a voltage. In our previous work, the properties of the device were significantly affected by environmental factors such as temperature and relative humidity. In that work, the effects on the device properties were investigated through an accelerated degradation test in a thermostat/humidistat bath at a constant temperature of 40 °C and a relative humidity of 80%. The switching speed between the reflective state and transparent state increased as the duration of the simulated environmental exposure increased. The device stored for 7 days under the simulated environmental conditions showed a around 45-fold slower switching speed than that of the as-prepared device. In this work, a high-durability surface coating material constructed from a cyclo olefin polymer sheet and ultraviolet resin was developed to protect the device from environmental degradation. The device with surface coating kept under the simulated environmental conditions for 7 days showed almost the same switching speed as the as-prepared device with the surface coating.  相似文献   

16.
采用直流磁控溅射法在n+-Si上制备了TiO2薄膜,采用电子束蒸发镀膜仪在TiO2薄膜上沉积Au电极,获得了Au/TiO2/n+-Si结构的器件.研究了退火温度对薄膜结晶性能及器件电阻开关特性的影响.Au/TiO2/n+-Si结构的器件具有单极性电阻开关特性,置位(set)电压,复位(reset)电压、reset电流及功率的大小随退火温度的不同而不同,并基于灯丝理论对器件的电阻开关效应的工作机理进行了探讨.研究结果表明,500℃退火的器件具有良好的非易失性.器件高低阻态的阻值比大于103,其信息保持特性可达10年之久.在读写次数为100次时,器件仍具有电阻开关效应.  相似文献   

17.
Li H  Zhang Q  Marzari N 《Nanotechnology》2008,19(17):175203
The influences of trapped charges on carrier transport in carbon nanotubes (CNTs) are studied using CNT field-effect transistors with a partial top-gate and a global back-gate. Trapped charges induced by the global back-gate voltage sweeping (± 20?V) promote the device from 'ON' states to near 'OFF' states at zero gate voltage. The channel conductance and field-effect mobility of the device are significantly affected by the pre-trapped charges induced by global back-gate voltage pulses. When the partial top-gate is swept, the pre-trapped charges induced by the global back-gate voltage pulses change the conduction type of the device. In contrast, the pre-trapped charges induced by the partial top-gate voltage pulses could force the device to the 'ON' or 'OFF' state during the top-gate sweeping (± 4?V).  相似文献   

18.
In this work, we demonstrate the fabrication of a transparent and flexible memory device in the simple structure of metal/dielectric/metal (MIM). Here, the MIM structure consists of gold electrode/200 nm Parylene-C/20 nm gold nanoparticles/100 nm Parylene-C/indium-tin-oxide (ITO) coated polyethylene terephthalate (PET). The use of parylene as the dielectric layer is important to ensure that there is no thermal stress induced on the flexible ITO/PET substrate compare to other reported works using various organic dielectrics that require high temperature curing. In addition, parylene deposition does not disturb the drop-casted gold nanoparticles. Hence, the use of parylene will be the right step forward in the fabrication of mechanically flexible and optically transparent devices. Current versus voltage (IV) plot shows the presence of hysteresis suggesting the charge storage capability as a memory device. In the IV plot, three distinct regions based on the slope have been identified and the transport mechanisms are discussed and explained. The fabricated device shows similar behavior as write-once-read-many memory device and can be programmed with either positive or negative bias voltage. However, the memory device shows unstable current state when being bent under different curvature diameters.  相似文献   

19.
In this paper a variable-speed system for a loaded permanent magnet direct current boring machine (PMDCBM) is described in details. The voltage adjustment of PMDCBM is accomplished by means of solid state switch with a high gain Darlington transistor. The device designed possesses good variable speed characteristic and Iow loss at low speed. The speed can be regulated automatically to hold at an ideal value according to the load.  相似文献   

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