Pre-exponential factor in<Emphasis Type="Italic">a</Emphasis>-Se<Subscript>75</Subscript>In<Subscript>25-<Emphasis Type="Italic">x</Emphasis></Subscript>Pb<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> thin films

Temperature dependence of d.c. conductivity is studied ina- Se₇₅In_25-x Pb _x thin films wherex is varied from 0–10. From these measurements, the values of the pre-exponential factor (σ₀) and activation energy (ΔE) are calculated for each glassy alloy. An approximate linear dependence of ln σ₀ on AE is observed in this glassy system with good agreement between the expected and calculated σ₀ values using Meyer-Neldel rule. Linear dependence of ln σ₀ on ΔE in case of amorphous materials indicates that the conduction band tails a finite energy distance towards the valence band and Fermi level is controlled by fixed dominant hole levels deeper in the gap.     

Characterization and electrical properties of semiconducting Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-K<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> glasses

Semiconducting glasses of the Fe₂O₃-Bi₂O₃-K₂B₄O₇ system were prepared by the press-quenching method and their dc conductivity in the temperature range 223–393 K was measured. The glass transition temperature values (T_g) of the present glasses were larger than those of tellurite glasses. This indicates a higher thermal stability of the glass in the present system. The density for these glasses was consistent with the ionic size, atomic weight and amount of different elements in the glasses. Mössbauer results revealed that the relative fraction of Fe increases with increasing Fe₂O₃ content. Electrical conductivity showed a similar composition dependency as the fraction of Fe. The glasses had conductivities ranging from 10 to 10 Scm at temperatures from 223 to 393 K. Electrical conduction of the glasses was confirmed to be due to non-adiabatic small polaron hopping and the conduction was primarily determined by hopping carrier mobility.     

Relaxor behavior and ferroelectric properties of Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-K<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-KNbO<Subscript>3</Subscript> lead-free ceramics

Lead-free ferroelectric ceramics of (1−x) [0.88Na_0.5Bi_0.5TiO₃-0.12K_0.5Bi_0.5TiO₃]-x KNbO₃(x = 0, 0.02, 0.04, and 0.06) were prepared by the conventional ceramic fabrication technique. The crystal structure, dielectric properties and P-E hysteresis loops were investigated. XRD data showed that all compositions could form pure perovskite structure. Temperature dependence of dielectric constant ε _r and dissipation factor tanδ measurement between room temperature and 500^∘C revealed that the compounds experience phase transitions that from ferroelectric to anti-ferroelectric and anti-ferroelectric to paraelectric in the range of x = 0–0.04. The frequency dependent dielectric constant showed these compounds were relaxor ferroelectric. At low frequency and high temperature, dielectric constant and dissipation factor increased sharply attributed to the superparaelectric clusters after the KNbO₃ doped.     

Electrical conductivity of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-Tm<Subscript>2</Subscript>O<Subscript>3</Subscript>-Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> solid solutions

New solid solutions, Bi_2?x?y Tm _x Nb _y O_3+δ, with tetragonal and cubic structures have been synthesized in the Bi₂O₃-Tm₂O₃-Nb₂O₅ system, and their electrical conductivity has been measured at temperatures from 670 to 1020 K. The 1020-K conductivity of the tetragonal solid solution Bi_1.8Tm_0.15Nb_0.05O_3+δ is comparable to that of Bi_1.75Tm_0.25O₃, the best conductor in the Bi₂O₃-Tm₂O₃ system.     

Crystal structure of Gd<Subscript>14</Subscript>Cu<Subscript>48</Subscript>Ga<Subscript>3</Subscript> and Tb<Subscript>14</Subscript>Cu<Subscript>48</Subscript>Ga<Subscript>3</Subscript>

The compounds Gd₁₄Cu₄₈Ga₃ and Tb₁₄Cu₄₈Ga₃ have been synthesized, and their structures have been determined by powder x-ray diffraction (Gd₁₄Ag₅₁ type).     

Thermal conductivity of Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>-Gd<Subscript>2</Subscript>Te<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> solid solutions

We have measured the thermal conductivity of Bi₂Te₃-Sb₂Te₃-Gd₂Te₃ solid solutions at temperatures from ～80 to 300 K and have determined the electronic and lattice components of their total thermal conductivity and the contributions of Sb₂Te₃ and Gd₂Te₃ to their thermal resistance. The results indicate that heat in these materials is transported largely by phonons and that three-phonon processes play a key role in determining the lattice thermal conductivity of the solid solutions.     

Solid-state reactions in the system Li<Subscript>2</Subscript>CO<Subscript>3</Subscript>-Na<Subscript>2</Subscript>CO<Subscript>3</Subscript>-Nb<Subscript>2</Subscript>O<Subscript>5</Subscript>-Ta<Subscript>2</Subscript>O<Subscript>5</Subscript>

The formation mechanisms of Li _x Na_{1 ?x} Ta _y Nb_{1 ? y} O₃ perovskite solid solutions in the Li₂CO₃-Na₂CO₃-Nb₂O₅-Ta₂O₅ system have been studied by x-ray diffraction, differential thermal analysis, thermogravimetry, IR spectroscopy, and mass spectrometry at temperatures from 300 to 1100°C. The results indicate that the synthesis of Li _x Na_{1 ? x} Ta _y Nb_{1 ? y} O₃ solid solutions involves a complex sequence of consecutive and parallel solid-state reactions. An optimized synthesis procedure for Li _x Na_{1 ? x} Ta _y Nb_{1 ? y} O₃ solid solutions is proposed.     

New ferromagnetics based on manganese-alloyed chalcopyrites A<Superscript>II</Superscript>B<Superscript>IV</Superscript>C<Stack><Subscript>2</Subscript><Superscript>V</Superscript></Stack>

This review describes the principles of semiconductor spintronics, represents the physicochemical properties of materials based on manganese-alloyed A^IIB^IVC₂^V compounds, considers the results from theoretical simulation of magnetic properties of A^IIB^IVC₂^V alloyed with 3d metals, summarizes the basic approaches to explanation of ferromagnetism with Curie points above room temperature arising in A^IIB^IVC₂^V:Mn, and indicates promising ways to synthesize and study magnetic semiconductors based on chalcopyrites A^IIB^IVC₂^V in order to produce a suitable material for spintronic devices.     

Conductivity of Sm<Subscript>2</Subscript>TiO<Subscript>5</Subscript> and Sm<Subscript>2</Subscript>Ti<Subscript>2</Subscript>O<Subscript>7</Subscript>

The oxygen-ion conductivity of porous materials, the coarse-grained pyrochlore-like Sm₂Ti₂O₇ and fine-grained Sm₂TiO₅ compounds, produced by mechanical activation of initial oxides is studied at 400–1000 °C. The Sm₂TiO₅ samples contain ～15 wt % of the nanosized pyrochlore-like Sm₂TiO₅ phase in addition to the rhombic phase. As determined by impedance spectroscopy, the ionic conductivities of Sm₂TiO₅ and Sm₂Ti₂O₇ at 1000°C are 1.3 × 10^?3 and 1.8 × 10^?4 S cm^?1, and the activation energies of the bulk and grainboundary conductivities of the materials are 1.04 and 1.24 eV for Sm₂TiO₅ and 1.69 and 1.80 eV for Sm₂Ti₂O₇.     

Potassium ion conducting K<Subscript>1 − 2<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>FeO<Subscript>2</Subscript> solid electrolytes

New potassium ion conducting solid electrolytes based on potassium monoferrite have been prepared through partial substitution of the divalent cation Cd²⁺ on the potassium site, and their properties have been investigated. The introduction of cadmium cations sharply increases the electrical conductivity of KFeO₂ over the entire temperature range studied. In addition to the maximum in conductivity at the boundary of the K_{1 − 2x} Cd _x FeO₂ solid solution, there is a maximum at a higher cadmium content (x = 0.30–0.35). The possible origins of this maximum are discussed.     

Crystallization from high-temperature solutions in the K<Subscript>2</Subscript>O-P<Subscript>2</Subscript>O<Subscript>5</Subscript>-V<Subscript>2</Subscript>O<Subscript>5</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> system

We have studied general trends of crystallization from high-temperature solutions in the K₂O-P₂O₅-V₂O₅-Bi₂O₃ system at P/V = 0.5?2.0, K/(P + V) = 0.7?1.4, and Bi₂O₃ contents from 25 to 50 wt % and identified the stability regions of BiPO₄, K₃Bi₅(PO₄)₆, K₂Bi₃O(PO₄)₃, and K₃Bi₂(PO₄)_{3 ? x} (VO₄) _x (x = 0?3) solid solutions. The synthesized compounds have been characterized by X-ray powder diffraction and IR spectroscopy, and the structure of two solid solutions has been determined by single-crystal X-ray diffraction (sp. gr. C ₂/c): K₃Bi₂(PO₄)₂(VO₄), a = 13.8857(8), b = 13.5432(5), c = 6.8679(4) Å, β = 114.031(7)°; K₃Bi₂(PO₄)_1.25(VO₄)_1.75, a = 13.907(4), b = 13.615(2), c = 6.956(2) Å, β = 113.52(4)°.     

Superconducting Properties of Iodine-Intercalated Bi<Subscript>2</Subscript>Sr<Subscript>2</Subscript>Ca<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>10+<Emphasis Type="Italic">x</Emphasis></Subscript>

The superconducting properties of iodine-intercalated high-temperature superconducting Bi₂Sr₂Ca₂Cu₃O_10+x phase (Bi-2223) were systematically studied. It was found that for samples containing a significant amount of Bi₂Sr₂CaCu₂O_8+x , iodine intercalation results in the dramatic decrease of the inter-granular critical current density, as well as a significant decrease of the critical temperature (T _c), the critical current density in the grains (J _cg), and of the amount of Bi-2223. For samples with a large amount of Bi-2223, T _c changes insignificantly, whereas J _cg can even increase. We argue that the different behavior of the superconducting parameters is the result of various oxygen concentrations, and we explain the effect of iodine intercalation based on the parabolic dependence between T _c and the number of holes per CuO₂ layer. The H(T) curves (determined from the peak position in the loss signal of ac susceptibility) for intercalated samples deviate significantly from the quasi 2D-like behavior, pointing toward an enhancement of the 3D fluctuations of vortices. For the change in the values and dimensionality of the flux pinning in the process of the intercalation, we attempted a qualitative explanation based on the models proposed in literature.     

Microstructure and H<Subscript>2</Subscript>S gas sensing properties of nanocrystalline perovskite-type La<Subscript>0.6</Subscript>Co<Subscript>0.4</Subscript>Mn<Subscript>0.5</Subscript>Ni<Subscript>0.5</Subscript>O<Subscript>3</Subscript>

Nanocrystalline La_1−x Co _x Mn_1−y Ni _y O₃ (x = 0.2 and 0.4; y = 0.1, 0.3, and 0.5) thick films sensors prepared by sol–gel method were studied for their H₂S gas sensitivity. The structural and morphological properties have been carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Average particle size estimated from XRD and TEM analyses was observed to be 30–35 nm. The gas response characteristics were found to depend on the dopants concentration and operating temperature. The maximum H₂S gas response of pure LaMnO₃ was found to be at 300 °C. In order to improve the gas response, material doped with transition metals Co and Ni on A- and B-site, respectively. The La_0.6Co_0.4Mn_0.5Ni_0.5O₃ shows high response towards H₂S gas at an operating temperature 250 °C. The Pd-doped La_0.6Co_0.4Mn_0.5Ni_0.5O₃ sensor was found to be highly sensitive to H₂S at an operating temperature 200 °C. The gas response, selectivity, response time and recovery time were studied and discussed.     

Electric-field effect on crystal growth in the Li<Subscript>3</Subscript>PO<Subscript>4</Subscript>-Li<Subscript>4</Subscript>GeO<Subscript>4</Subscript>-Li<Subscript>2</Subscript>MoO<Subscript>4</Subscript>-LiF system

We have studied the electric-field effect on crystallization processes in the Li₃PO₄-Li₄GeO₄-Li₂MoO₄-LiF system. In zero field, Li_3+x P_1?x Ge _x O₄ (x = 0.31) crystals were grown on the cathode under the conditions of this study. At low applied voltages (≤ 0.5 V), we obtained Li₂MoO₄, Li₂GeO₃, and Li_1.3Mo₃O₈. In the range V = 0.5–1 V, crystals of Li_3+x P_1?x Ge _x O₄ solid solutions with x = 0.17, 0.25, 0.28, 0.29, and 0.36 were obtained. An applied electric field was shown to reduce the melting temperature of the starting mixtures and the crystallization onset temperature.     

Properties of nanocrystalline ZrO<Subscript>2</Subscript>-Y<Subscript>2</Subscript>O<Subscript>3</Subscript>-CeO<Subscript>2</Subscript>-CoO-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> powders

We have studied the properties of nanocrystalline ZrO₂-Y₂O₃-CeO₂-CoO-Al₂O₃ powders prepared via hydrothermal treatment of a mixture of coprecipitated hydroxides at 210°C. A number of general trends are identified in the variation of the properties of the synthesized powders during heat treatment at temperatures from 500 to 1200°C. Our results demonstrate that the addition of 0.3 mol % CoO to nanocrystalline ZrO₂-based powders containing 1 to 5 mol % Al₂O₃ allows one to obtain composites with good sinterability at a reduced temperature (1200°C).     

Impedance spectroscopy of Ba<Subscript>3</Subscript>Sr<Subscript>2</Subscript>DyTi<Subscript>3</Subscript>V<Subscript>7</Subscript>O<Subscript>30</Subscript> ceramic

Polycrystalline sample of Ba₃Sr₂DyTi₃V₇O₃₀ was prepared at 950°C using a high-temperature solid-state reaction technique. X-ray structural analysis indicated the formation of a single-phase orthorhombic structure with lattice parameters: a = 12·2719 (39) Å, b = 8·9715(39) Å and c = 19·7812(39) Å. Microstructural study showed densely packed uniform distribution of grains over the surface of the sample. The a.c. impedance plots were used as tools to analyse the electrical response of the sample as a function of frequency at different temperatures (30–500°C). These plots revealed the presence of grain boundary effect, from 200·C onwards. Complex impedance analysis showed non-Debye type of dielectric relaxation. The Nyquist plots showed the negative temperature coefficient of resistance character of Ba₃Sr₂DyTi₃V₇O₃₀. A hopping mechanism of electrical transport processes in the system is evident from the modulus analysis. The activation energy of the compound (calculated both from loss and modulus spectrum) is the same, and hence the relaxation process may be attributed to the same type of charge carrier.     

Symmetry of Superconductivity in YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7</Subscript>: <Emphasis Type="Italic">s</Emphasis> or <Emphasis Type="Italic">d</Emphasis>

The superconducting hole condensate of YBa₂Cu₃O₇ resides in its BaO layers, and involves s-wave paired holes. This picture differs from the currently widespread opinion that the superconductivity at the surface and in the bulk is d-like, and resides in the CuO₂ planes: it is the main reason why high-temperature superconductivity has been unsolved.     

The formaldehyde sensitivity of LaFe<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>3</Subscript>-based gas sensor

Rare earth oxides LaFe_1-x Zn _x O₃ were synthesized by sol–gel method. The X-ray diffraction patterns (XRD) showed that LaFe_1-x Zn _x O₃oxides are single phase with orthorhombic perovskite structure, they all show p-type semiconducting properties. Among nanocrystalline LaFe_1-x Zn _x O₃ oxides, LaFe_0.77Zn_0.23O₃ exhibits the highest sensitivity of 44.5 to 100 ppm formaldehyde. The optimal working temperature was found to be around 240 °C. Moreover the LaFe_0.77Zn_0.23O₃ exhibites short response and recovery time to 100 ppm formaldehyde. The lattice parameter doesn’t agree with Vegard’s law with the increasing Zn content, and the relative density was 70–80%.