LiSbO3含量对BiMnO3掺杂K0.5Na0.5NbO3陶瓷的结构与压电性能的影响研究

采用传统陶瓷常压烧结工艺制备(0.996–x)KNN-0.004BM-xLS(x=0、0.01、0.02、0.03、0.04、0.05、0.06)无铅压电陶瓷,着重研究了LS的含量对(0.996–x)KNN-0.004BM-xLS陶瓷相结构和压电性能的影响。结果表明,当x≤0.02时,陶瓷具有单一的正交相结构;当0.03≤x≤0.05时,陶瓷具有正交相与四方相共存的过渡结构;当x=0.06时,陶瓷具有单一的四方相结构。陶瓷的MPB成分范围在0.03≤x≤0.05。随着LS含量的增加,陶瓷材料的d33和kp均先增加后减小,当x=0.05时,均达到最大值,分别为230 pC/N和0.42;陶瓷的To-t和Tc均向低温方向移动;当x=0时,陶瓷的To-t和Tc分别为455和215℃;当x=0.02时,陶瓷的To-t和Tc分别为385和150℃;当x=0.06时,To-t和Tc分别降至370℃和75℃。     

(Na0.5K0.5)NbO3基无铅压电陶瓷的研究

由于钙钛矿结构无铅压电陶瓷具有高的压电性能,已成为无铅压电陶瓷研究的热点．本文综述了钙钛矿结构无铅压电陶瓷（Na0．5K0.5）NbO3的研究进展和趋势．重点从添加第二组元、添加助烧剂、取代改性和制备方法四个方面,归纳和分析了（Na0．5K0.5）NbO3基无铅压电陶瓷的研究开发进展,并对（Na0.5K0.5）NbO3基无铅压电陶瓷今后的研究和发展提出一些建议．     

丝网印刷技术制备高性能织构化K0.45Na0.55NbO3陶瓷（英文）

以片状NaNbO3晶粒为模板,以K4CuNb8O23(KCN)为助烧剂,通过丝网印刷技术制备出晶粒定向的K0.45Na0.55NbO3(KNN)无铅压电陶瓷.片状的NaNbO3模板是以铋层状Bi2.5Na3.5Nb5O18为前驱物,通过熔盐拓扑微观反应制得.织构化(K0.45Na0.55)NbO3陶瓷的晶粒定向程度达到95%,其定向晶粒沿丝网印刷方向平行排列,块体的相对密度达到92%.在平行和垂直于丝网印刷方向的两个面上,织构化(K0.45Na0.55)NbO3陶瓷表现出不同的定向程度,且其介电、铁电和压电性能均明显优于无织构化陶瓷.介电常数εr、压电系数d33、机电耦合系数kp在平行于丝网印刷方向的表面上,分别提高了75%、44%、42%;在垂直于丝网印刷方向的表面上分别提高了35%、30%、35%.相对于目前其它的晶粒定向技术,丝网印刷方法既简单又高效.     

NbO3-LiNbO3无铅压电陶瓷的烧结特性和压电性能研究

采用传统陶瓷烧结工艺制备了（1-x）（K0．5Na0．5）NbO3-xLiNbO3无铅压电陶瓷,研究了陶瓷的结构、烧结特性及电性能特征．制备的（K0．5Na0．5）NbO3-LiNbO3陶瓷为单一的钙钦矿结构,室温下其相结构随LiNbO3含量增加逐渐由正交相向四方相转变,显微结构也由于LiNbO3含量的不同而表现出很大差异．与（K0．5Na0．5）NbO3陶瓷相比,（K0．5Na0．5）NbO3-LiNbO3陶瓷的烧结温度降低,烧结特性得到改善．（K0．5Na0．5）NbO3-LiNbO3陶瓷表现出优越的压电性能,其中0．94（K0．5Na0．5）NbO3—0．06LiNbO3（x=0．06）陶瓷的压电常数d33达到205pC／N,机电耦合系数kp为40．3％,kt达到49．8％．     

无铅压电陶瓷K0.5Na0.5NbO3-BiFeO3的烧结工艺与压电性能研究

采用传统常压固相烧结工艺制备了掺杂0.8at%BiFeO₃(BF)的K_0.5Na_0.5NbO₃(KNN) 无铅压电陶瓷,着重研究了烧结温度与保温时间对陶瓷的晶体结构、相转变、致密度与压电、介电性能的影响. 研究结果表明, 所有陶瓷样品都为单一的钙钛矿结构, 烧结温度与保温时间对陶瓷样品的室温晶体结构与相转变温度几乎没有影响, 但对陶瓷的表面形貌、密度和压电性能有较大的影响. 当保温时间为3h,在1100℃至1150℃范围内, 随烧结温度的升高,陶瓷的压电常数d33、平面机电耦合系数Kp及机械品质因数Qm均一直升高, 介电损耗tanδ则显著降低. 当烧结温度为1150℃时, 随保温时间的增加, 陶瓷的压电性能先显著提高后基本保持不变. 1150℃保温2h烧结的陶瓷获得良好的性能：密度ρ=4.50g/cm³（致密度为95.63%）, d₃₃=132pC/N, K_p=45%, Q_m=333.73, tanδ=2.39%.     

以Al-B-C为烧结助剂的SiC陶瓷热压烧结工艺

以SiC超细粉末为原料,Al粉、B粉和碳黑为烧结助剂,采用热压烧结工艺制备了SiC陶瓷,重点研究了烧结助剂含量(4～13 wt％)对SiC陶瓷物相组成、致密度、断面结构及力学性能的影响.除SiC主晶相外,X射线衍射图还显示了Al8B4C7相的存在;当烧结助剂的含量从4 wt％增至13 wt％时,扫描电镜照片显示陶瓷断面形貌从疏松结构变成致密结构,存在晶粒拔出现象;陶瓷力学性能随着烧结助剂含量的增加先升高后降低.当烧结助剂含量为10 wt％时,SiC陶瓷的力学性能达到最高,抗弯强度为518.1 MPa,断裂韧性为4.98 MPa·m1/2.Al、B和C烧结助剂在1850℃烧结温度下形成的Al8B4C7液相促进晶粒间的重排和传质,并填充晶粒间的气孔,提高了陶瓷致密度.     

非化学计量比对(K0.465Na0.465Li0.07)(Nb0.95Sb0.05)O3无铅压电陶瓷结构及性能的影响

通过传统固相合成工艺制备了(K0.465+xNa0.465+yLi0.07)(Nb0.95-zSb0.05)O3(x,y,z=-0.01～0.02)无铅压电陶瓷,研究了非化学计量比对陶瓷结构及压电性能的影响。结果表明符合化学计量比的陶瓷具有四方钙钛矿结构;在实验范围内,K和Nb的过量或少量均不会改变体系的相结构,而Na过量将会导致体系正交-四方相变温度升高到室温以上,并且正交-四方相变温度随y的增加而升高;过量添加约0.5%(摩尔分数)的K或Na便能补偿在高温烧结时的碱金属元素的挥发损失,进而提高陶瓷的压电性能;该体系陶瓷的组分在较大范围内变化时(如当y=z=0时,x=0～0.02;当x=z=0时,y=0～0.01;以及当x=y=0时,z=-0.01～0.005),仍然能保持d33>200pC/N和kP>40%这样较好的性能。上述结果不仅有利于在研究中材料制备工艺的重复,而且有利于当材料在器件应用时所面临的规模化生产。     

钛酸铋钠基陶瓷的烧结机制

应用晶粒生长动力学唯象理论研究籽晶模板对0．94Na0.5Bi0.5TiO3-0．06BaTiO3无铅压电织构陶瓷烧结机制的影响规律,确定了晶粒生长动力学指数和激活能,探讨了籽晶含量对陶瓷晶粒生长的作用机理。实验结果表明：籽晶Bi2.5Na3.5Nb5O18含量小于或等于15wt％时,晶粒生长以界面反应和晶格扩散两种机制控制,籽晶含量大于或等于20wt％时,以界面反应机制为主;取向长条晶需要的激活能小而容易生长,且晶粒尺寸比等轴晶大。     

（Bi1/2Na1/2）0.94Ba0.06TiO3无铅压电陶瓷制备工艺研究

采用两步合成工艺制备了（Bi1/2Na1/2）0.94Ba0.06TiO3无铅压电陶瓷。利用XRD、SEM等分析技术，研究了（Bi1/2Na1/2）0.94Ba0.06TiO3陶瓷的先低温再高温的两步合成工艺，烧结工艺对陶瓷晶体结构和压电性能的影响。结果表明，两步合成工艺有利于提高陶瓷性能，其压电常数如3最大值可达155pC/N，比传统方法提高了24％。较合适的预合成工艺为：750℃/1h＋8501000℃/2～3h；该体系陶瓷具有较宽的烧结温度范围，较合适的烧结工艺为：1150～1190℃/2～3h。     

Sm2O3掺杂(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3无铅压电陶瓷的制备与性能

采用固相合成法制备了Sm2O3掺杂的(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3(BCZT)无铅压电陶瓷.借助XRD、SEM等手段对该陶瓷的显微结构与电性能进行了研究.结果表明,Sm2O3的掺杂降低了BCZT无铅压电陶瓷的烧结温度并使居里温度点Tc从85℃提高到95℃.当Sm2O3掺杂量为0.02wt%～0.1wt%时,样品具有典型ABO3型钙钛矿结构.Sm2O3掺杂量为0.02wt%时,所得陶瓷样品具有最优综合电性能,其压电常数d33、机电耦合系数kp、机械品质因子Qm、介电损耗tanδ和介电常数εr分别为590 pC/N、0.52、43、1.3%和3372.     

Lattice Dynamics and Phase Transitions in KNbO3 and K0.5Na0.5NbO3 Ceramics

Phonons in both ceramic samples KNbO₃ (KN) and K_0.5Na_0.5NbO₃ (KNN-50) were investigated from 10 to 900 K by means of Raman, infrared, and THz spectroscopy. First-order transitions from cubic to tetragonal phases were detected at about 755 K (in KN) and 710 K (in KNN-50), where the first component of the polarization appears. Transitions from the tetragonal to the orthorhombic phases take place around 510 and 475 K, respectively. The last transitions from orthorhombic to rhombohedral phases are strongly first-order type. T_C is shifted from 200 K in KN to about 90 K in KNN-50. All Raman active modes below 200 cm^-1. disappear in KN but not in KNN-50. The overdamped soft mode present at high temperatures in the THz range changes its dielectric strength at each phase transition (when the corresponding component jumps to higher frequencies) and abruptly disappears from THz spectra in the rhombohedral phase, because it stiffens up to 200 cm^-1. This mode has lower frequency and higher dielectric strength in KNN-50.     

Dielectric and piezoelectric properties of LiSbO3 doped 0.995 K0.5Na0.5NbO3-0.005BiFeO3 piezoelectric ceramics

LiSbO₃ doped and undoped 0.995 K_0.5Na_0.5NbO₃-0.005BiFeO₃ piezoelectric ceramics with high properties have been fabricated in air by the conventional ceramic processing. By adding LiSbO₃ to K_0.5Na_0.5NbO₃-BiFeO₃ ceramics, the dielectric and piezoelectric properties evidently increase. The doped ceramics exhibit good electrical properties. The enhanced piezoelectric properties of the ceramics should be attributed to optimum LiSbO₃ substitution and better microstructure with high density. Results show that LiSbO₃ doped K_0.5Na_0.5NbO₃-BiFeO₃ lead-free piezoelectric ceramics are a promising lead-free piezoelectric material for applications in different devices.     

Piezoelectric and dielectric properties of K0.5Na0.5NbO3-LiSbO3-BiScO3 lead-free piezoceramics

(1 − x) (0.95K_0.5Na_0.5NbO₃-0.05LiSbO₃)-xBiScO₃ lead-free piezoceramics have been fabricated by an ordinary pressure-less sintering process. The relationship between the BS content, phase structure, density, and piezoelectric properties and their temperature stability was discussed particularly. All compositions show a main perovskite structure, showing room-temperature symmetries of orthorhombic at x = 0, of tetragonal at 0.002 ≤ x ≤ 0.01. When 0.002 ≤ x ≤ 0.008, the ceramics have excellent electrical properties of d₃₃ = 265-305 pC/N, k_p = 45-54%, ?_r = 1346-1638, Curie temperature T_c = 315-370 °C and depolarizing temperature T_d = 315-365 °C, comparable to that of other KNN-based piezoceramics. The results indicate that the ceramics are promising lead-free piezoelectric materials.     

Effects of BiAlO3 on structure and electrical properties of K0.5Na0.5NbO3-LiSbO3 lead-free piezoceramics

(1−x)(0.948 K_0.5Na_0.5NbO₃-0.052LiSbO₃)-xBiAlO₃ (KNNLS-xBA) lead-free piezoceramics were synthesized by conventional solid state reaction method. The compositional dependence of phase structure and electrical properties of the ceramics was systemically studied. XRD patterns revealed that all the ceramic samples possessed pure perovskite structure. In addition, polymorphic phase transition (PPT) for the ceramics with BA doping could not be observed in the measuring range from room temperature to 500 °C. Within the studied range of BA addition, the ceramics with x = 0.002 represented a relatively desirable balance between the degradation of the piezoelectric properties, improvement in temperature stability and mechanical quality factor. It was found that the KNNLS-0.002BA ceramics exhibited optimum overall properties (d₃₃ = 233 pC/N, k_p = 35%, tanδ = 0.047, P_r = 27.3 μC/cm², Q_m = 56 and T_c = 349 °C), suggesting that this material should be a promising lead-free piezoelectric candidate for piezoelectric applications.     

Piezoelectric and ferroelectric properties of K0.5Na0.5NbO3 ceramics synthesized by spray drying method

Potassium-sodium niobate was synthesized at 800 °C for 1 h using dried precursors in a powder form obtained by the spray drying method. Different samples were sintered from 1060 to 1120 °C for 2 h reaching a relative density as high as 96% of the theoretical value. Piezoelectric and ferroelectric properties were studied for these samples and some of the most prominent results are: k_p, d₃₁, 2P_r, and 2E_C of 0.36, 39 pC/N, 29 μC/cm² and 16.5 kV/cm, respectively, for the sample sintered at 1080 °C. The methodology presented in this study can be used to synthesize submicrometer powders.     

Enhanced ferroelectric properties in Bi-doped K0.5Na0.5NbO3 thin films prepared by pulsed laser deposition

Lead-free ferroelectric Bi-doped K_0.5Na_0.5NbO₃ (KNN) and undoped KNN films were prepared by pulsed laser deposition. Bi-doped film exhibited good crystallization and improved ferroelectric properties. The dielectric constant and loss tangent were 1038 and 0.138 at 1 kHz, respectively. The remanent polarization (P_r = 28 μC/cm²) of Bi-doped film was about four times larger than that of the undoped film, which attributed to the decrease of oxygen vacancies concentration. The coercive field (E_c = 24 kV/cm) of Bi-doped films was half of the undoped film. The conduction mechanisms of Bi-doped film determined to be Space-Charge-Limited-Current and Poole–Frenkle emission at low and high electric field, respectively.     

Effect of post-annealing treatment in oxygen on dielectric properties of K0.5Na0.5NbO3 thin films prepared by chemical solution deposition

K_0.5Na_0.5NbO₃ thin films were prepared on Pt/Ti/SiO₂/Si substrates by chemical solution deposition method with different annealing temperatures of 550 °C, 600 °C, 700 °C. The post-annealing treatment was introduced at 550 °C for 3 min in oxygen ambient. It is found that the films were composed of pure provskite phase, and the post-annealing treatment promoted the crystallization and improved the quality of the films, which resulted in the enhancement of the dielectric property of the films. The effect of the post-annealing on the dielectric properties of the films was also discussed.     

铁酸镧掺杂对铌酸钾钠基陶瓷介电和铁电性能的影响(英文)

用传统固相反应法制备了(K0.5Na0.5)NbO3(KNN)和0.98(K0.5Na0.5)NbO3-0.02LaFeO3(0.98KNN-0.02LF)无铅陶瓷,并对其介电、铁电性质以及相结构进行了研究.KNN陶瓷是正交相,0.98KNN-0.02LF陶瓷是伪立方相结构.介电研究表明:0.98KNN-0.02LF陶瓷的介温曲线与KNN陶瓷相比较出现两点异常:(i)正交相–四方相相变温度(TO-T)和四方相–立方相相变温度(TT-C)均降低;(ii)最高介电常数温度Tm附近的相变温度宽化.并且,0.98KNN-0.02LF陶瓷在0～400℃内显示了相对比较平坦的介电常数,介电常数达到2000,介电损耗低于4%.电滞回线变"窄"进一步证明了0.98KNN-0.02LF陶瓷的弛豫性.