共查询到16条相似文献,搜索用时 159 毫秒
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《中国测试》2020,(6)
针对大反射负载牵引测量过程中,由于矢网系统误差导致的负载牵引测量误差较大问题,提出可行的解决方案。首先,以矢网8项系统误差模型为基础,推导出大反射负载牵引功率增益测量模型。以直通线功率的增益误差和为目标函数,通过优化阻抗点分布、重新构建优化权重函数,实现大反射负载牵引测量准确度的进一步提高。经优化比较,在8 mm频段(负载反射系数模值0.9),系统测量直通线功率增益的最大误差由±1 dB优化到±0.2 dB以内(国内文献报道±0.3 dB),进一步提高在片大反射负载牵引系统测量准确度。此外,通过比较分析,明确反射跟踪误差是影响大反射负载牵引测量准确度的主要系统误差项。 相似文献
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微波功率固态放大器负载牵引特性的自动测试 总被引:2,自引:0,他引:2
提出了一种新的微波功率固态放大器件负载牵引测试方法和校准方法,研制了自动测试系统,并对该测试方法、校准方法和自动测试系统进行了较为详细的讨论。通过实测,获得了微波功率固态放大器输出功率等值线阻抗圆图,验证了所提出的校准方法、测试方法和自动测试系统测试方案是正确的,并具有实用性。 相似文献
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本提出了一种测量微功率放大器件输出端反射系数的新方法。通过对可变负载在不同频率和位置下的校准,采用所建立的自动测量系统,运行专门编制的自动控制和数据处理软件,可对微波功率放大器件输出端反射系数进行测量,该方法具有测量简便、迅速、自动化程度高等优点。 相似文献
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介绍一种微波功率放大器增益的测量方法。经校准件进行TRL校准,校准后分别对所用的两只定向耦合器进行耦合衰减、方向性系数、主线插损和输入口驻波比的频率反应进行测量,同时对终端负载的输入驻波比进行测量。最后由安捷伦矢量网络分析仪组建网络参数测试系统对微波功率放大器的增益进行测量。 相似文献
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针对在片S参数校准,设计制作GaAs衬底SOLT校准组件,通过计算方法对校准组件中直通、开路、短路和负载校准件中偏置传输线的时延和损耗进行定义,运用基于NIST multiline TRL校准的测量方法对校准组件中开路校准件电容和短路校准件电感参数进行提取,结合直流电阻测试法测试负载阻值大小,实现对SOLT校准组件的完整表征。最后用自行研制并表征的SOLT校准组件校准在片S参数测试系统,通过测量无源器件验证校准效果,将测量结果与NIST multiline TRL校准后的测量结果比较,在20 GHz内传输幅度最大偏差0.1 dB,传输相位最大偏差3.5°。 相似文献
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Chahine S.A. Huyart B. Bergeault E. Jallet L.P. 《IEEE transactions on instrumentation and measurement》2002,51(3):408-412
An active load-pull measurement system using two six-port reflectometers operating in the W-frequency band is demonstrated. Ninety loads over the whole Smith chart have been synthesized and measured by both reflectometers. The maximum deviation between both measurement data is 0.02 for the magnitude and 3° for the phase of the reflection coefficient of the 90 loads. The constant power gain circles of a PHEMT operating at 89 GHz are shown and compared with those calculated from its Sij scattering parameters. The deviation between the radii of circles is less than 0.03 相似文献
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在WR-28功率基准系统中,等效源反射系数是确定量热计有效效率、分析不确定度与进行基准功率量值传递的重要参数,其只与接入量热计的定向耦合器有关,而与信号源无关。介绍了传统三端口测试法、直接校准法和最新提出的Shimaoka K法3种三端口器件等效源反射系数的测试方法。在频段26.5~40 GHz,运用Shimaoka K法对三端口器件(定向耦合器)进行等效源反射系数测量,并与其他两种方法实验结果比较,验证了Shimaoka K法的可行性与准确性,同时通过实验比较,由于Shimaoka K法具有的综合优势,使其成为WR-28功率基准中等效源反射系数的最佳测试方法,并以Shimaoka K法为例,对等效源反射系数不确定度进行了评定。 相似文献
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Barataud D. Blache F. Mallet A. Bouysse P.P. Nebus J.-M. Villotte J.P. Obregon J. Verspecht J. Auxemery P. 《IEEE transactions on instrumentation and measurement》1999,48(4):835-842
One of the most important requirements that RF and microwave power amplifiers designed for radiocommunication systems must meet is an optimum power added efficiency (PAE) or an optimal combination of PAE and linearity. A harmonic active load-pull system which allows the control of the first three harmonic frequencies of the signal coming out of the transistor under test is a very useful tool to aid in designing optimized power amplifiers. In this paper, we present an active load-pull system coupled to a vectorial “nonlinear network” analyzer. For the first time, optimized current/voltage waveforms for maximum PAE of microwave field effect transistors (FET's) have been measured. They confirm the theory on high efficiency microwave power amplifiers. The proposed load-pull setup is based on the use of three separated active loops to synthesize load impedances at harmonics. The measurement of absolute complex power waves is performed with a broadband data acquisition unit. A specific phase calibration of the set-up allows the determination of the phase relationships between harmonic components. Therefore, voltage and current waveforms can be extracted. The measurement results of a 600 gate periphery GaAs FET (Thomson Foundry) exhibiting a PAE of 84% at 1.8 GHz are given. Such results were obtained by optimizing the load impedances at the first three harmonic components of the signal coming out of the transistor. Optimum conditions correspond to a class F operation mode of the FET (i.e., square wave output voltage and pulse shaped output current). A comparison between measured and simulated current/voltage waveforms is also presented 相似文献
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Ghannouchi F.M. Larose R. Bosisio R.G. Demers Y. 《IEEE transactions on instrumentation and measurement》1990,39(4):628-631
An experimental six-port network analyzer has been used as a load-pull system in an active load tuning configuration. It is shown that by using a dual six-port reflectometer and an appropriate calibration procedure, it is possible to measure at the same reference plane the ratio between the incident and reflected waves and the power flow at the output of the test transistor. Using these two values the simulated load impedance seen by a transistor and the microwave power delivered to the simulated load are calculated. Experimental results on microwave transistor characterization confirm the validity of this method. This technique uses less hardware than conventional methods, and presents a comparable accuracy to conventional techniques 相似文献
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Teppati V. Ferrero A. Garelli M. Bonino S. 《IEEE transactions on instrumentation and measurement》2010,59(3):616-622