热化学气相沉积法在硅纳米丝上合成碳纳米管

利用热化学气相沉积法在负载不同厚度催化剂的硅纳米丝(SiNW)表面生长碳纳米管(CNTs),探讨了生长条件对所合成SiNW-CNT的结构和场发射特性的影响.这种类似树状的三维结构具有较高碳纳米管表面密度及降低的电场筛除效应等潜在优势.使用拉曼光谱( Raman)、电子显微镜(SEM)、透射电子显微镜(TEM)、能量扩散分光仪(EDS)分析了碳纳米管的结构性质,并在高真空下施加电场测得碳纳米管的场发射特性.结果表明:随硅纳米丝上负载催化剂镍膜厚度的变化,所合成碳纳米管的表面特性、结晶结构及功函数改变,导致电子发射难易程度的改变,进一步影响碳纳米管的场发射特性.     

铬酸溶液后处理增强碳纳米管的场发射特性

采用铬酸溶液对碳纳米管进行后处理,旨在修饰碳纳米管的表面形态及改变碳纳米管的表面结构,进一步增强碳纳米管的场发射特性.铬酸溶液后处理与传统以硝酸后处理的厅法不同之处在于,铬酸溶液可以更有效率地与非品质碳及碳纳米管发生化学反应.可以预期碳纳米管经过铬酸溶液处理后,碳纳米管的表而形态、化学组成及场发射特性会产生很大的变化.场发射的数据显示,经铬酸溶液处理20 min的碳纳米管场发射电流比未经过铬酸溶液处理的场发射电流有明显的增加.然而,长时间的铬酸溶液处理也会降低碳纳米管场发射特性.经铬酸溶液处理20min的碳纳米管场发射电流增强原因主要为适度的铬酸溶液处理可以改变碳纳米管的表面形态,使碳管的表面密度增大、场发射功函数降低.但过长时间的铬酸溶液后处理,又会造成碳纳米管数目减少及表面结构受到损害,导致碳纳米管场发射特性变差.     

碳纳米管/聚四氟乙烯复合材料场发射特性研究

通过催化热解法制备了碳纳米管,采用机械共混法制作了碳纳米管/聚四氟乙烯复合材料场发射阴极,研究了不同碳纳米管质量分数对复合材料阴极场发射特性的影响,通过制作的封装结构,对比研究了真空环境下碳纳米管/聚四氟乙烯与碳纳米管/环氧树脂复合材料的场发射特性,证明碳纳米管/聚四氟乙烯复合材料更适用于场发射阴极的真空环境中,可以满足场发射显示器件的要求.     

碳纳米管非金属掺杂对结构和性能影响的研究

通过讨论氮、硼、硅、氟等非金属原子掺杂的碳纳米管,对场电子发射特性的影响。介绍了掺杂在场电子发射、能源电池、气体传感器等领域的研究和应用。掺杂可以增加碳纳米管的缺陷,改变其电子结构。掺杂可使碳纳米管转变为n型半导体或是金属性导体,将提高场发射性能。同时,掺杂亦可使碳纳米管向P型半导体转变,这将不利于场发射性能改善。当场发射性能随着掺杂浓度升高而提高时,存在最佳掺杂浓度值,一旦超出,则场发射性能逐渐下降。因此,研究碳纳米管非金属掺杂具有重要的应用价值。     

碳纳米管阵列密度对其场发射性能的影响

本具体研究了外电场，碳纳米管自身线度，尤其管的阵列密度对其场发射性能的影响，在均匀碳纳米管阵列模型下，从理论上给出碳纳米管阵列的尖端电场，电场增强因子以及最佳阵列密度的解析表示式，理论结果表明，电场增强因子的数量级为10^2－10^4，并且碳纳米管阵列的电场增强因子与其管密度之间有着敏感的依赖关系，即当密度取某一特殊值（又被称作最佳密度值）时，电场增强因子会明显增大，相对最佳密度而言，过高或过低的管密度都将削弱碳纳米管的尖端电场，进而晚管阵列的场发射性能。     

定向碳纳米管的制备及其场发射性能研究

定向碳纳米管的制备方法是碳纳米管场发射显示器技术领域一项十分关键的技术.简要介绍了定向碳纳米管的制备方法、结构检测技术,并综合评述了影响定向碳纳米管场发射性能的因素.     

碳纳米管阵列栅极冷阴极场发射增强因子的计算

垂直于栅极冷阴极六角排列的碳纳米管(CNTs)阵列是最具有应用前景的CNTs场发射平面显示器结构.计算了该结构尖端及侧壁的电势和电场分布以及场增强因子.计算结果表明:CNTs尖端处电场强度很大,随着半径Υ的增加,电场强度急剧减小;CNTs长径比L/Υ越大,尖端电场越强;栅孔半径R越大,CNTs顶端电场强度越小.     

尖锐端头碳纳米管的制备与场发射特性

采用氢电弧法制备了尖锐端头的碳纳米管,获得了具有三种特殊形貌的尖端,即锥形、颈缩形和铅笔状尖端.该特殊彤貌的彤成可归因于在原料中加入硅粉进而形成的结构缺陷.研究了所得碳纳米管的场发射特性,发现其阈值电场较低,仅为3.75V/mm;场发射电流密度可高达～1.6×105A/cm2;且场发射稳定性好.以上优异的场发射性能归结于该碳纳米管具有良好的结构完整性和独特的尖端结构特征.

Abstract：

Carbon nanotubes (CNTs)with sharp tips were synthesized by a hydrogen arc discharge method. Three unusual morphologies,i.e. ,a cone-shaped tip,a suddenly-shrinking tip,and a pencil point-like tip were observed. These novel tip structures are considered to be related to the addition of a small amount of silicon powder in the raw material,which may introduce structural defects in the CNTs. The field emission properly of the sharp-tip CNTs was investigated,and a low threshold electric field of 3.75 V/m,a high field emission current density of ～1.6× 105 A/cm2,and a good emission stability were demonstrated. The superior field emission performance of the CNTs can be attributed to their good crystallinity and unique tip structures.     

基于碳纳米管薄膜构建场发射平面显示器的阴极结构

碳纳米管场发射平面显示器具有工作电压低、功耗低和制造成本低等优势,近年来基于碳纳米管场发射平面显示器的研究与应用研发已成为显示技术领域研究的热点之一,并已取得丰富成果。简要回顾了碳纳米管用于场发射的机理以及用于场发射平面显示器的优势,主要介绍了碳纳米管用于场发射平面显示器研究的一些进展和一些亟待解决的问题,包括碳纳米管阴极薄膜的制备、碳纳米管阴极工作稳定性与寿命的改进以及阴极结构的设计等,并展望了碳纳米管用于场发射平面显示器的发展前景。     

Ni催化剂在N2O／N2／NH3中退火对碳纳米管表面结构及场发射特性的影响

研究在N2O/N2/NH3氛围中对Ni催化剂进行退火处理,旨在探讨退火处理对所生成碳纳米管的表面结构及其发射特性的影响.从表面结构及表面元素分析结果发现:Ni催化剂在N2O/N2/NH3氛围中退火处理之后,Ni催化剂的颗粒大小及催化剂的化学成分发生改变,进而影响所合成的碳纳米管的表面结构及场发射特性.扫描电镜显示:经过N2O退火前处理后,催化金属薄膜在成核时较易形成均匀性的金属颗粒,且金属颗粒较小.比较经N2O/N2/NH3氛围退火处理之后所合成的碳纳米管结果,经过N2O前处理可以有效抑制非品质碳的成长,使所成长出的碳纳米管数量最多、场发射电流最大.原因主要是因为N2O对催化剂镍膜金属前处理过程中分解出的氮原子及氧原子会活化及氧化催化剂Ni金属,并使所形成的Ni金属颗粒较小且更为均匀,造成表面型态上的显著改变,有助于使合成的碳纳米管场发射电流变大.     

Effects of welding head on the carbon nanotube field emission in ultrasonic nanowelding

Ultrasonic nanowelding technique was used to improve the field emission properties of carbon nanotube (CNT) cathodes. Two kinds of welding heads were used and the effects of the head on the emission properties were studied. The results show that cathodes welded by Al₂O₃ flat head demonstrate excellent field emission properties with high emission current density and good current stability. The improved field emission performance is attributed to the reliable and low resistance contact between CNTs and metal substrates. Cathodes welded by steel matrix head show a lower turn-on electric field due to the protruding CNTs at the edge of the welded pits.     

电泳沉积碳纳米管的微波等离子体改性

采用电泳法在Si基底上沉积了碳纳米管(CNTs)薄膜, 并利用Ar微波等离子体对CNTs薄膜进行了改性处理, 研究了改性前后CNTs的微观结构和场发射性能. 高分辨透射电子显微镜(HRTEM)和拉曼光谱的表征结果表明, 等离子体改性明显改变了CNTs的微观结构, 形成了大量的管壁结构缺陷、纳米级突起和“针形”尖端; 场发射测试结果表明, CNTs经Ar等离子体改性处理后开启电场较改性前?略有增大, 等离子体改性10min的CNTs薄膜表现出最佳的场发射J-E特性, 阈值电场由改性前的3.12V/μm降低到2.54V/μm, 当电场强度为3.3V/μm时, 场发射电流密度由改性前的18.4mA/cm²增大到60.7mA/cm². 对Ar微波等离子体改性增强CNTs薄膜场发射性能的机理进行了分析.     

Electron-emission properties of carbon nanotube micro-tips coated by amorphous carbon nitride films

An approach to the preparation of a tip-type of field emitter that is made up of carbon nanotubes (CNTs) coated with amorphous carbon nitride (a-CN_x) films is presented for the purpose of enhancing its electron emission property. CNTs were directly grown on nano-sized conical-type tungsten tips via the inductively coupled plasma-chemical vapor deposition system, and a-CN_x films were coated on the CNTs using an radio frequency magnetron sputtering system. The morphologies and microstructures of the a-CN_x-coated CNTs were analyzed via field emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, high-resolution transmission electron microscopy, and x-ray photoelectron spectroscopy. The electron emission properties of the a-CN_x/CNT hetero-structures were measured using a high-vacuum field emission measurement system. The best field emission properties, such as a very low turn-on voltage of 500 V and a maximum emission current of 176 μA were achieved for the CNT emitter coated with the 5 nm-thick a-CN_x film. In addition, this emitter showed a highly stable behavior in long-term (up to 25 h) electron emission.     

Field emission properties of RuO2 thin film coated on carbon nanotubes

Carbon nanotubes (CNTs) have been widely applied in field emission (FE) due to their high geometric aspect ratio and low work function. More recently, researchers have introduced ruthenium dioxide (RuO₂) as a field emitter because of its excellent chemical and thermal stability due to its oxide nature. This study used the surface morphology of CNTs and the field emission (FE) stability of RuO₂ to improve FE characteristics. Since the work functions of CNTs and RuO₂ are very close, this study combined these two elements by applying a thin film of RuO₂ on the CNT surface. In the process of covering the tips of CNTs with a thin film of RuO₂ eventually obtained the best matching of these two elements. The study not only enhanced the FE performance of CNTs but also extended FE lifetime by applying a thin film of RuO₂ on the CNT tips.     

Field emission properties of RuO2 thin film coated on carbon nanotubes

Carbon nanotubes (CNTs) have been widely applied in field emission (FE) due to their high geometric aspect ratio and low work function. More recently, researchers have introduced ruthenium dioxide (RuO₂) as a field emitter because of its excellent chemical and thermal stability due to its oxide nature. This study used the surface morphology of CNTs and the field emission (FE) stability of RuO₂ to improve FE characteristics. Since the work functions of CNTs and RuO₂ are very close, this study combined these two elements by applying a thin film of RuO₂ on the CNT surface. In the process of covering the tips of CNTs with a thin film of RuO₂ eventually obtained the best matching of these two elements. The study not only enhanced the FE performance of CNTs but also extended FE lifetime by applying a thin film of RuO₂ on the CNT tips.     

Enhanced field emission characteristics of nitrogen-doped carbon nanotube films grown by microwave plasma enhanced chemical vapor deposition process

Nitrogen-doped carbon nanotube (CNT) films have been synthesized by simple microwave plasma enhanced chemical vapor deposition technique. The morphology and structures were investigated by scanning electron microscopy and high resolution transmission electron microscopy. Morphology of the films was found to be greatly affected by the nature of the substrates. Vertically aligned CNTs were observed on mirror polished Si substrates. On the other hand, randomly oriented flower like morphology of CNTs was found on mechanically polished ones. All the CNTs were found to have bamboo structure with very sharp tips. These films showed very good field emission characteristics with threshold field in the range of 2.65-3.55 V/μm. CNT film with flower like morphology showed lower threshold field as compared to vertically aligned structures. Open graphite edges on the side surface of the bamboo-shaped CNT are suggested to enhance the field emission characteristics which may act as additional emission sites.     

碳纳米管表面化学镀银及场发射性能研究

利用化学镀方法对碳纳米管(carbon nano-tubes,CNTs)表面金属化镀银,研究表面化学镀银碳纳米管的场发射性能。碳纳米管经氧化处理后,表面存在一些羰基(CO)、羧基(—COOH)和羟基(—OH)等活性基团,经敏化、活化处理后,形成金属钯活化中心,进而还原金属银离子,从而获得表面化学镀银的碳纳米管。表面化学镀银碳纳米管阴极的开启电场约为0.19V/μm,当电场强度为0.37V/μm时,最大发射电流达6mA/cm2,场增强因子约为25565。实验结果表明,化学镀银层可以提高碳纳米管的电子传输和热传输能力,提高碳纳米管的场发射电流和发射稳定性,有利于碳纳米管在场发射平板显示领域的应用。     

Enhanced Field Emission of WS2 Nanotubes

Results on electron field emission from free standing tungsten disulfide (WS₂) nanotubes (NTs) are presented. Experiments show that the NTs protruding on top of microstructures are efficient cold emitters with turn‐on fields as low as 1 V/μm and field enhancement of few thousands. Furthermore, the emission current shows remarkable stability over more than eighteen hours of continuous operation. Such performance and long‐term stability of the WS₂ cathodes is comparable to that reported for optimized carbon nanotube (CNTs) based emitters. Besides this, it is found that the WS₂ cathodes prepared are less sensitive than CNTs in chemical reactive ambients. The high field enhancement and superior reliability achieved indicates a potential for vacuum nanoelectronics and flat panel display applications.