Bias effects on the tribological behavior of cathodic arc evaporated CrTiAlN coatings on AISI 304 stainless steel

In this study, CrTiAlN coatings were deposited on AISI 304 stainless steel by cathodic arc evaporation under a systematic variation of the substrate bias voltage. The coating morphology and properties including surface roughness, adhesion, hardness/elastic modulus (H/E) ratio, and friction behavior were analyzed to evaluate the impact of the substrate bias voltage on the coating microstructure and properties. The results suggest that for an optimized value of the substrate bias voltage, i.e. − 150 V, the CrTiAlN coatings showed increased Cr content and improved properties, such as higher adhesion strength, hardness, and elastic modulus in comparison to the coatings deposited by other substrate bias voltage. Moreover, the optimum coatings achieved a remarkable reduction in the steel friction coefficient from 0.65 to 0.45.     

Influence of hydrogen on the mechanical properties and microstructure of DLC films synthesized by r.f.-PECVD

This paper aims to investigate the influence of hydrogen on the variation of mechanical properties and microstructure of diamond-like carbon (DLC) films synthesized by radio frequency plasma chemical vapor deposition (r.f.-PECVD). The DLC films were deposited on a silicon substrate (p-type). The reactant gases employed in this paper are a mixture of acetylene and hydrogen. The ratio of hydrogen in the gas mixture was successively varied to clarify its influence on the roughness, thickness, microstructure, hardness, modulus, residual stress and wear depth for the DLC films. The results reveal that increasing the concentration of hydrogen decreases thickness and roughness. Meanwhile, increasing the hydrogen concentration causes the decrease of sp³ ratio, hardness as well as modulus. Finally, wear behavior is correlated to the surface morphology and hydrogen concentration for deposition with hydrogen-containing reactant gas.     

The effects of plasma pre-treatment and post-treatment on diamond-like carbon films synthesized by RF plasma enhanced chemical vapor deposition

Diamond-like carbon (DLC) films were synthesized by RF plasma enhanced chemical vapor deposition and the effects of plasma pre-treatment and post-treatment on the DLC films were investigated. Experimental results show that the surface roughness of the substrate, ranging from 0.2 to 1.2 nm, created by the plasma pre-treatment, will affect the surface roughness of the DLC films deposited using methane as the carbon source. However, the film surface roughness (0.1-0.4 nm) is much smaller than that of the substrate. Raman analysis and hardness measurement by nanoindentation indicate that the structure and the hardness of the DLC films are relatively unchanged for the film surface roughness investigated. For the argon or hydrogen plasma post-treatment of the DLC films deposited using acetylene as the carbon source, it is found that surface roughness decreases with the post-treatment time. Although the hardness decreases after post-treatment, it remains relatively constant with increasing post-treatment time.     

Structural and mechanical properties of titanium oxide thin films for biomedical application

Titanium oxide thin films were deposited by radiofrequency reactive sputtering in Ar-O₂ atmosphere on silicon (100) wafers and titanium alloy plates (Ti-6Al-4V). Thin films structural characterization was carried out by grazing incidence X-ray diffraction, atomic force microscopy, scanning and transmission electron microscopies. Chemical composition was checked by X-ray wavelength dispersive spectroscopy. Mechanical assessment was achieved by nano-indentation and nano-scratch measurements. The films deposited on silicon substrates are over-stoechiometric in oxygen, with an oxygen to titanium ratio of about 2.2. The growth of anatase and rutile phases was promoted by ranging the total and oxygen partial pressures between 0.17-1.47 Pa and 35-85%. The growth rate of films, determined by grazing incidence X-ray reflectivity, was ranging from 35 to 55 nm/h. The rutile single-phased films possess a hardness of about 2.5 times higher and a lower friction coefficient than the anatase films. The films which contain anatase possess a high surface root-mean-square roughness and a reduced elastic modulus of around 120 GPa close to reduced elastic moduli of hydroxyapatite bioceramic and titanium alloy. So the anatase film could be the best candidate as a titanium oxide intermediate layer between hydroxyapatite and titanium alloy in the field of biomedical implants.     

Surface characterization and nanomechanical properties of diamond-like carbon films synthesized by RF plasma enhanced chemical vapor deposition

Diamond-like carbon (DLC) films were synthesized by RF plasma enhanced chemical vapor deposition using acetylene as the carbon source and the effects of acetylene/nitrogen ratio in the reaction atmosphere, deposition pressure, and plasma post-treatment using different atmospheres on the surface roughness and mechanical properties of DLC films were investigated. Although the surface roughness, characterized by AFM, decreased as the acetylene/nitrogen ratio in the reaction atmosphere decreased, the hardness of DLC films measured by nanoindentation also decreased with the decrease of the acetylene/nitrogen ratio, which is consistent with the Raman results of the I_D/I_G ratio. Rougher films with higher residual stress were obtained when using a deposition pressure higher than 40.0 Pa (0.3 torr). For the effect of plasma post-treatment using different atmospheres, surface smoothing was found for the hydrogen plasma post-treatment, whereas nitrogen and argon plasma post-treatments resulted in surface roughening. Hydrogen plasma post-treatment was found to lower the surface roughness without significantly sacrificing the hardness.     

Electronic properties of low temperature epitaxial silicon thin film photovoltaic devices grown by HWCVD

This study addresses the correlation of the electrical, surface, and structural evolution of HWCVD crystalline Si thin films with temperature, thickness, and hydrogen dilution. Scanning electron microscopy and atomic force microscopy reveal an increase with surface roughness with hydrogen dilution, as expected, while showing increasing surface roughness with substrate temperature, in contrast to previous studies of crystalline Si growth. This suggests that H desorption enables more contaminant absorption of the growing surface with increasing temperature, in turn increasing roughness. The open-circuit voltage of these films is shown to increase significantly over time, ∼ 50 mV over one week, due to the decrease in surface recombination velocity associated with the growth of a native oxide layer. This indicates the importance of post-deposition treatments for surface passivation.     

Mechanical characterization of LiPON films using nanoindentation

Nanoindentation has been used to characterize the elastic modulus and hardness of LiPON films ranging in thickness from 1 to 10 μm. Four fully dense, amorphous films were deposited on glass and sapphire substrates with one film annealed at 200 °C for 20 min. The modulus of LiPON is found to be approximately 77 GPa, and argued to be independent of the substrate type, film thickness, and annealing. Based on the numerical analysis of Monroe and Newman, this value may be sufficiently high to mechanically suppress dendrite formation at the lithium/LiPON interface in thin film batteries [1]. Using Sneddon's stiffness equation and assuming the modulus is 77 GPa, the hardness is found to be approximately 3.9 GPa for all but the annealed film. The hardness of the annealed film is approximately 5% higher, at 4.1 GPa. Atomic force microscopy images of the residual hardness impressions confirm the unexpected increase in hardness of the annealed film. Surprisingly, the indentation data also reveal time-dependent behavior in all four films. This indicates that creep may also play a significant role in determining how LiPON responds to complex loading conditions and could be important in relieving stresses as they develop during service.     

Mechanical properties and thermal stability of nitrogen incorporated diamond-like carbon films

The nitrogen incorporated diamond-like carbon films were deposited on Si (100) substrates by arc ion plating (AIP) under different N₂ content in the gas mixture of Ar and N₂. The influence of N₂ content on the film microstructure and mechanical properties was studied by atomic force microscopy, transmission electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and nanoindentation. It was found that the hardness (H), elastic modulus (E), elastic recovery (R) and plastic resistance parameter (H/E) decrease with increasing the nitrogen content. The decrease of mechanical properties of DLC films resulted from nitrogen incorporation was associated with total sp³ carbon bond content and N-sp³C bond content. The structural modification as well as mechanical properties of the annealed nitrogen incorporated diamond-like carbon films was investigated as a function of annealing temperature. Raman spectra indicate that the I_D/I_G ratio starts to increase and G peak position shifts upward at the annealing temperature over 500 °C. The hardness and elastic modulus of thermally annealed nitrogen incorporated DLC films decreased slightly at lower annealing temperature and then significantly decreased at higher annealing temperature. The strong covalent bonding between C and N atoms is expected to be effective on their thermal stability enhancement.     

Nanoindentation study of magnetron-sputtered CrN and CrSiN coatings

CrN and CrSiN coatings were deposited on stainless steel substrate by reactive magnetron sputtering. The coatings were characterized for phases, chemical composition, microstructure, and mechanical properties by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM)/energy dispersive spectroscopy (EDS), atomic force microscopy (AFM), and nanoindentation technique, respectively. The cubic phase was the only phase observed in both the coatings as observed in XRD results. A dense morphology was observed in these coatings deposited with high nitrogen and Si contents, 50:50 and 18.65 at.%, respectively. Nanoindentation measurement of CrN coatings, with Ar + N₂ proportions of 60:40, showed maximum hardness (H) and modulus (E) of 21 ± 0.85 GPa and 276 ± 13 GPa, respectively. The CrN coatings deposited in pure N₂ atmosphere showed H and E values of 27 ± 1.62 and 241 ± 10 GPa, respectively. The measured H and E values of CrSiN coatings were found to be 28 ± 1.40 GPa and 246 ± 10 GPa, respectively. The improved hardness in both the coatings was attributed mainly to a reduction in crystallite size, decrease in surface roughness, and dense morphology. The incorporation of Si into the CrN coatings has improved both hardness and Young’s modulus.     

Role of argon in hot wire chemical vapor deposition of hydrogenated nanocrystalline silicon thin films

Structural, optical and electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) films, deposited from silane (SiH₄) and argon (Ar) gas mixture without hydrogen by hot wire chemical vapor deposition (HW-CVD) method were investigated. Film properties are carefully and systematically studied as a function of argon dilution of silane (R_Ar). We observed that the deposition rate is much higher (4-23 Å/s) compared to conventional plasma enhanced chemical vapor deposited nc-Si:H films using Ar dilution of silane (0.5-0.83 Å/s). Characterization of these films with Raman spectroscopy revealed that Ar dilution of silane in HW-CVD endorses the growth of crystallinity and structural order in the nc-Si:H films. The Fourier transform infrared spectroscopic analysis showed that with increasing Ar dilution, the hydrogen bonding in the films shifts from di-hydrogen (Si-H₂) and (Si-H₂)_n complexes to mono-hydrogen (Si-H) bounded species. The hydrogen content in the films increases with increasing Ar dilution and was found to be < 4 at.% over the entire range of Ar dilutions of silane studied. However, the band gap shows decreasing trend with increase in Ar dilution of silane and it has been attributed to the decrease in the percentage of the amorphous phase in the film. The microstructure parameter was found to be > 0.4 for the films deposited at low Ar dilution of silane and ~ 0.1 or even less for the films deposited at higher Ar dilution, suggesting that there is an enhancement of structural order and homogeneity in the film. From the present study it has been concluded that the Ar dilution of silane is a key process parameter to induce the crystallinity and to improve the structural ordering in the nc-Si:H films deposited by the HW-CVD method.