Eu3+掺杂的硼酸锶系列荧光体的合成及其发光性能

采用溶胶-凝胶法和高温固相反应法合成了Eu^3 掺杂的SrB4O7、SrB2O4、Sr2B2O5、Sr3B2O6荧光体．荧光光谱测试结果表明在不同基质中Eu^3 的荧光发射是有区别的，Sr2B2O5：Eu^3 、Sr3B2O7：Eu^3 发射峰在610nm左右的红光区，SrB2O4：Eu^3 的发射峰在593nm的橙色区，而SrB4O7：Eu^3 则表现出了Eu^2 离子的特征峰，产生这种区别主要是由Eu^3 所处的配位环境不同造成的．荧光体SrB4O7：Eu^3 、SrB2O4：Eu^3 、Sr2B2O5：Eu^3 、Sr3B2O6：Eu^3 的最佳掺杂浓度为2％左右．     

高温固相法合成CaO：Eu^3＋，Na^＋红色荧光粉的研究

采用高温固相法,合成CaO：Eu^3＋,Na^＋等一系列红色荧光粉。研究煅烧温度和Eu^3＋、Na^＋离子的掺杂量对样品发光性能的影响,并对样品的物相、激发和发射光谱进行分析。结果表明,当前驱物的煅烧温度在950℃以上时,分别作为激活剂和敏化剂的Eu^3＋和Na^＋离子全部进入到CaO晶格中并占据Ca^2＋的位置,其最佳掺杂量分别为1．5mol％和10mol％;Na^＋离子的掺杂不仅有利于基质的稳定,而且可以提高样品的发光强度;煅烧温度升高有助于样品发光强度的提高;在波长为200～400nm氙灯的激发下,最强激发峰值为244nm,属于Eu^3＋-O^2-的电荷迁移跃迁;最大发射峰值位于592nm,对应于Eu^3＋离子的^5D0→^7F1跃迁,并且Eu^3＋离子在CaO基质中主要处于严格对称中心的格位上。     

发光二极管用荧光材料Sr2CeO4:Sm3+的合成及其发光特性

以具有一维结构的Sr2CeO4化合物为研究对象、Sm3 作为发光中心,探索了其作为LED用荧光材料的可能性.用高温固相法于1200℃、6h合成了Sr2CeO4:Sm3 系列单相粉末样品,并研究了其发光性质.结果表明,在365nm激发下,从荧光光谱中可以看出存在从基质向稀土离子的能量转移.通过调节荧光材料Sr2CeO4:Sm3 中稀土离子Sm3 的掺杂浓度,可以调谐发光体的发光颜色,当Sm3 离子浓度较小(<3%)时,体系发出很强的白光;当Sm3 离子浓度较大(3%～15%)时,体系发出红光.测量了荧光材料的色坐标,发现Sr2CeO4:1%Sm3 的色坐标是(0.334,0.320),接近于纯白色(0.33,0.33),可以作为一种新型的UV-LED用单一白色荧光材料.     

GdAl3(BO3)4:Eu3+荧光粉的光致发光特性

用硝酸盐热分解法合成了单相粉末样品Gd1-xEuzAl3(BO3)4(0≤x≤1),研究了Eu^3 在GdAl3(BO3)4中的紫外和真空紫外光谱性质．GdAl3(BO3)4：Eu^3 中稀土离子占据非中心对称的格位，Eu^3 在其中的特征发射以^5D0→^7F2电偶极跃迁为主,在147nm激发下GdAl3(BO3)4：Eu^3 呈色坐标为(0．645，0．330)的强红光发射，说明是非常有前途的PDP用红色发光材料,在GdAl3(BO3)4：Eu^3 的真空紫外光谱中观察到两个峰，158nm的激发带归属于B03基团的吸收，258nm处的激发带为Eu^3 →O^2-的电荷转移跃迁带．在147nm激发下，GdAl3(BO3)4：Eu^3 的红光发射强度随着Eu^3 浓度的增加而减弱，而在258nm激发下随Eu^3 浓度的增大Eu^3 的红光发射增强，说明它们发光的机理不同。     

杂质离子对Y2O3:Eu3+发光性能的影响

研究了碱金属及碱土金属离子掺杂的荧光体Y2O3:Eu^3 0.05,A^ 0.02(A=Li,Na,K)和Y2O3:Eu^3 0.05,B^2 0.02(B=Mg,Ca,Sr,Ba)的荧光，余辉发光及热释光特性，余辉光谱数据表明：杂质离子掺杂的荧光体Y2O3:Eu^3 的余辉发射主峰与未掺杂荧光体Y23:Eu^3 的荧光发射主峰（611nm)一致，为经典Eu^3 的^5D0-^7F2电偶极跃迁，杂质离子的引入明显地延缓了Y2O3:Eu^3 的余辉衰减，其中Y2O3：Eu^3 ,A^ (A=Li,Na,K)的余辉衰减趋势几乎完全一致，而Y2O3：Eu^3 ,B^2 ,B2^ (B Mg,Ca,Sr,Ba）的余辉衰减趋势由慢到快依次为Ca,Sr,Ba,Mg。热释光谱数据显示，杂质离子的掺杂导致基质中电子陷阱能级的生成，这是导致余辉衰减减慢的直接原因。Y2O3：Eu^3 ,A^ 的热释峰都位于175℃左右，相应电子陷阱能级深度为0.966eV左右，而Y2O3：Eu^3 的热释峰由高到低分别位于192℃（Ca),164℃（Sr),135℃（Ba),118℃(Mg)，电子陷阱能级深度分别为1.003eV(Ca),0.942eV（Sr),0.880eV(Ba),0.843eV(Mg)。结合余辉衰减数据，可以看到，Y2O3:Eu^3 ，A^ 和Y2O3：Eu^3 ,B^2 的热释光谱与相应荧光体的余辉衰减趋势吻合得十分好，由此可以得出，一定相同的条件下，热释峰值温度越高，杂质陷阱能级越深，相应荧光体的余辉衰减越慢。     

煅烧温度对微米级NaYF4：Eu^3＋六棱柱微结构及荧光性能的影响

以EDTA为络合剂,采用水热法一步合成了六方相NaYF4：Eu^3＋ 六角微米棱柱,晶粒大小均一,长度为2—3μm,直径为500nm。利用X射线粉末衍射（XRD）、扫描电镜（SEM）、荧光光谱以及透射电子显微镜（TEM）等手段对不同温度煅烧后的产物的物相结构、微观形貌、荧光性能和掺杂状态等进行了分析,结果表明,煅烧温度对NaYF4：Eu^3＋的晶体结构影响不大,仍为六方相晶型,但对晶粒形态和形貌有显著影响,改善了Eu^3＋在基质中的掺杂状态及NaYF4：Eu^3＋的荧光性能,其中在300℃下煅烧,样品仍能保持稳定的六角棱柱形状,可获得最佳的荧光性能。在395nm光激发下,NaYF4：Eu^3＋样品显示出较强的橙色（590nm）和红色（615nm）发光,分别来自于Eu^3＋离子^5D0→^7F1和^5Dc→^7F2的跃迁．     

ZnAl2O4：Eu^3＋红色发光材料的燃烧法合成与光谱性能研究

采用燃烧法在550℃合成了红色纳米发光材料ZnAl2O4：Eu^3＋，并用X射线粉末衍射对其结构进行了表征。XRD分析证实样品具有尖晶石结构的ZnAl2O4相。测定了样品的激发光谱和发射光谱，光谱数据表明：对应于Eu^3＋的。^5D0→^7F2跃迁的发射强度。^5D0→^7F0,1,3,4跃迁的发射强度，ZnAl2O4：Eu^3＋ 形成红色发光材料,推测是由于基质结构的不对称性，Eu^3＋在基质ZnAl2O4中占据非对称中心的格位所致。并考察了不同退火温度处理后，样品Eu^3＋的^5D0→^7Fj跃迁辐射变化情况。     

Mg^2＋离子对Sr2A12SiO7：Eu^2＋荧光体微结构及发光性能的影响

采用复合胶体喷雾工艺制备了Sr2Al2SiO7：Eu^2＋荧光体及掺入Mg离子后Sr2-xMgxAl2SiO7：Eu^2＋（x=0．1,0．2,0．4,0．6,0．8,1．0）荧光体。XRD分析及晶格常数计算结果表明,Eu^2＋离子部分取代Sr^2＋格位进入Sr2Al2SiO7晶格。Sr2Al2SiO7：Eu^2＋荧光体激发谱由峰值位于326nm附近的宽带构成,属于Eu^2＋的4f→5d跃迁吸收带;发射光谱主峰位于约500nm,属于Eu^2＋离子4f^65d→4f^7跃迁导致的宽带发射。XRD结果表明Mg^2＋添加浓度从x=0．1～1．0增加,Mg^2＋离子以取代离子形式进入Sr2Al2SiO7晶格。Mg^2＋离子添加浓度x=0．1时对Sr2Al2SiO7：Eu^2＋发射光谱影响不大,Sr1．9Mg0.1Al2SiO7：Eu0.02^2＋发射主峰仍位于500nm;z〉0．2后,Mg^2＋离子取代Sr^2＋离子使晶体场强度减弱,Eu^2＋离子5d能级晶场劈裂减小,导致Sr2-xMgxAl2SiO7：Eu^2＋发射峰蓝移至460nm。     

稀土离子RE(RE=Pr,Nb,Eu)在Sr2CeO4基质中的发光性质

通过燃烧法合成了Sr2CeO4:RE材料,研究了Sr2CeO4材料的结晶过程和发光性质及Pr3+,Nd3+和Eu3+稀土离子在Sr2CeO4基质中的发光性能.实验通过燃烧法制得的前驱体在1200℃焙烧2 h可得均一的Sr2CeO4相,较传统方法的合成时间大为降低.稀土离子Pr3+,Nd3+和Eu3+的在基质中的少量掺杂(0.02%)均可使Sr2CeO4在475 nm左右的特征发射谱峰明显变宽增强,且Eu3+离子的掺杂可使材料在510 nm,540nm,610 nm左右产生多个明显的稀土离子的特征发射峰.实验合成的发光材料具有良好的发光性能,证明Sr2CeO4材料可作为一种优良的发光材料的基质使用,为寻找新型的发光材料提供了一条新的途径.     

CeO2：Sm^3＋荧光粉的发光特性研究

采用高温固相反应法制备了不同浓度Sm^3＋掺杂的CeO2荧光粉，样品粉末在紫外激发下发出明亮的橙红色光。利用X射线衍射（XRD）和光致荧光光谱（PL）对样品进行了表征，结果表明样品在掺杂浓度小于4mol％时，Sm^3＋离子完全替代Ce^4＋离子进入基质CeO2的晶格而形成Ce1-xSmxO2固溶体。PL谱表明Sm^3＋的发射峰强度最初随Sm^3＋掺杂浓度提高而迅速增强，在Sm^3＋掺杂浓度为1mol％达到极大，随后出现浓度猝灭。     

Magnetic coupling in La0.67Ca0.33MnO3/La0.67Sr0.33CoO3/La0.67Ca0.33MnO3 sandwiches

La_0.67Ca_0.33MnO₃ (LCMO)/La_0.67Sr_0.33CoO₃ (LSCO)/LCMO trilayer films are fabricated on single-crystal substrates NdGaO₃ (110) and the interlayer coupling are investigated. Compared with LCMO single layer, sandwiches showed the enhanced metal-insulator transition temperature of LCMO layers. The magnetoresistance is dependent on spacer thickness and the peak value dramatically decreases when LSCO layer is thick enough because of shorting by the LSCO layer. The magnetic coercivity H_C shows a nonmonotonic behavior with changing spacer layer thickness and the waist-like hysteresis indicates that there is an indirect exchange coupling between the top and bottom LCMO layers across the spacer layer.     

Varistor properties of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-In2O3 ceramics

The varistor properties of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-In₂O₃ ceramics were investigated for different concentrations of In₂O₃. The increase of In₂O₃ concentration slightly increased the sintered density (5.60-5.63 g/cm³) and slightly decreased the average grain size (3.4-2.9 μm). The breakdown field increased from 6023 to 14822 V/cm with increasing concentration of In₂O₃. The nonlinear coefficient increased from 17.6 to 44.6 for up to 0.005 mol%, whereas the further doping caused it to decrease to 36.8. In₂O₃ acted as an acceptor due to the donor concentration, which decreases in the range of 1.02 × 10¹⁷ to 0.24 × 10¹⁷/cm³ with increasing concentration of In₂O₃.     

PbSbBiS4-Sb2S3 and PbSbBiS4-Bi2S3 joins in the PbS-Sb2S3-Bi2S3 system

Phase equilibria along the PbSbBiS₄-Sb₂S₃ and PbSbBiS₄-Bi₂S₃ joins of the PbS-Sb₂S₃-Bi₂S₃ system have been studied for the first time using differential thermal analysis, X-ray diffraction, microstructural analysis, microhardness tests, and density measurements, and the phase diagrams of the joins have been mapped out. The joins are shown to be pseudobinary with limited series of terminal solid solutions. The solid solutions are p-type semiconductors.     

Syntheses of hollandite type Rb2Cr8O16, K2Cr2V6O16 and K2V8O16

Hollandite-type compounds, Rb₂Cr₈O₁₆, K₂Cr₂V₆O₁₆ and K₂V₈O₁₆, were synthesized under high P-T conditions up to 1200°C and 7GPa. The structural refinement using a single crystal of Rb₂Cr₈O₁₆ confirms that the structure is similar to that of K₂Cr₈O₁₆. Magnetic measurements indicate that Rb₂Cr₈O₁₆ is ferromagnetic below 295K, K₂Cr₂V₆O₁₆ paramagnetic down to 77K and K₂V₈O₁₆ has susceptibility anomaly at 175K. These compounds are all semiconductive and show discontinuities in temperature-resistivity curves at points corresponding to magnetic anomalies.     

Microstructures of YBa2Cu3O7/La0.7Ca0.3MnO3 and La0.7Ca0.3MnO3/YBa2Cu3O7 bi-layers grown on (001)LaAlO3

Epitaxial YBa₂Cu₃O₇/La_0.7Ca_0.3MnO₃ (YBCO/LCMO) bi-layers and La_0.7Ca_0.3MnO₃/YBa₂Cu₃O₇ (LCMO/YBCO) bi-layers were grown on (001)LaAlO₃ by pulsed laser deposition, and their microstructures were compared by transmission electron microscopy investigation. In the YBCO(100 nm)/LCMO(150 nm) bi-layers, the LCMO layer consists of columnar grains of ~ 17 nm in diameter and contains mixed orientation domains of [100]_c, [010]_c and [001]_c. The YBCO layer is totally c-axis oriented and the YBCO lattices are tilted − 2.5° to + 2.5° as they grew on the rough surfaces of LCMO columnar grains. For the LCMO(140 nm)/YBCO(140 nm) bi-layers, the LCMO/YBCO interface is sharp and flat. The initial 12-nm thickness of the YBCO layer is composed of c-axis oriented domains, and the upper part of YBCO layer is [100] oriented. The LCMO layer was predominantly [001]_c oriented while [100]_c-oriented domains were occasionally observed.     

Nanocrystallization of SrBi2Nb2O9 from glasses in the system Li2B4O7---SrO---Bi2O3---Nb2O5

Transparent glasses in the system (100−x)Li₂B₄O₇–x(SrO---Bi₂O₃---Nb₂O₅) (10≤x≤60) (in molar ratio) were fabricated by a conventional melt-quenching technique. Amorphous and glassy characteristics of the as-quenched samples were established via X-ray powder diffraction (XRD) and differential thermal analyses (DTA) respectively. Glass–ceramics embedded with strontium bismuth niobate, SrBi₂Nb₂O₉ (SBN) nanocrystals were produced by heat-treating the as-quenched glasses at temperatures higher than 500 °C. Perovskite SBN phase formation through an intermediate fluorite phase in the glass matrix was confirmed by XRD and transmission electron microscopy (TEM). Infrared and Raman spectroscopic studies corroborate the observation of fluorite phase formation. The dielectric constant (_r) and the loss factor (D) for the lithium borate, Li₂B₄O₇ (LBO) glass comprising randomly oriented SBN nanocrystals were determined and compared with those predicted based on the various dielectric mixture rule formalism. The dielectric constant was found to increase with increasing SBN content in LBO glass matrix.     

Structural study of Sr0.3Ba0.7Nb2O6 and La0.030Sr0.255Ba0.700Nb2O6 ceramic systems

Sr_0.3Ba_0.7Nb₂O₆ (SBN) and La_0.030Sr_0.255Ba_0.700Nb₂O₆ (LSBN) ceramic compounds have been prepared using the traditional ceramic method at two different calcination temperatures (900 and 1000 °C) and later sintered both at 1400 °C. A study of the effects of the calcination temperatures and La substitution on the morphological, compositional, and structural properties of SBN and LSBN is presented using scanning electronic microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD) analysis. From Rietveld refinement processes, the XRD patterns were interpreted to evaluate such effects in the structural parameters and the site occupation factors of the heavy metals and oxygen atoms. The effect of the incorporation of La resulted in a 0.25% cell contraction and turned out to be higher than the 0.08% dilation effect produced by the increase of calcination temperature. The La ion with similar effective ionic radius and higher electronegativity is incorporated into the structure occupying the A₁ site just like the Sr ions in the SBN compound. Differences in the site occupation factors between the SBN and LSBN samples lead to substantial changes in the physical properties such as temperature of relative dielectric constant maximum, relative dielectric constant, and dielectric loss, correlated with the distortion and the relative orientation of the oxygen octahedra.     

Vapour-liquid equilibria in the ternary mixtures N2---CH4---C2H6 and N2---C2H6---C3H8

A systematic study was performed with mixtures consisting of N₂, CH₄, C₂H₆ and C₃H₈, to investigate experimentally phase equilibria and caloric properties and to test the accuracy of thermodynamic correlations. The first part of this Paper reports results of T---p---x---y measurements on ternary systems in the range 20 < p < 120 bar and 140 < T < 220 K. The results are compared with data calculated by generalized equations of state.     

静电纺丝法制备的Co0.6Ni0.3Cu0.1Fe2O4和Co0.6Ni0.3Zn0.1Fe2O4纳米纤维的结构及磁性能

采用静电纺丝技术制备出表面光滑、直径均匀的Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4/PVP和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4/PVP纳米纤维前驱丝,经500~900℃煅烧后得到Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维。用TG-DSC、XRD、SEM及VSM现代测试分析手段对Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维的结构、形貌及磁学性能进行测试表征。结果表明:在空气气氛中经500~900℃煅烧后可得到纯尖晶石相、结晶度良好的纳米纤维或短纤维;当温度为700℃时,Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维的形貌细长而光滑且直径相对均匀,大约为80nm;此时Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4纳米纤维则保有较高的剩磁比(M_r/M_s)及矫顽力,分别为0.56和1 088.87Oe。在500℃、600℃、700℃、800℃、900℃煅烧后,Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维的饱和磁化强度分别比Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4纳米纤维增大了14.5%、7%、16%、10.7%、8%,而矫顽力则分别降低了38%、51%、50%、46%、46.7%。两种纳米纤维的饱和磁化强度及矫顽力存在差异,为CoNi铁氧体在电磁方面的应用提供了很好的参考。     

The effect of Bi1.5Zn0.5Nb0.5Ti1.5O7 cover layer on the dielectric and tunable properties of Ba0.6Sr0.4TiO3/Bi1.5Zn0.5Nb0.5Ti1.5O7 bilayered thin films

Bi_1.5Zn_0.5Nb_0.5Ti_1.5O₇ (BZNT) thin films with different thicknesses as cover layers were deposited on the Ba_0.6Sr_0.4TiO₃ (BST) thin films on the Pt/Ti/SiO₂/Si substrates by radio frequency magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of BST/BZNT heterogeneous bilayered films were investigated as a function of the thickness of BZNT films and the effect of BZNT films on the asymmetric electrical properties of BST/BZNT bilayered films was discussed. It was found that BZNT cover layer significantly improved the leakage current and the dielectric loss, and the dielectric constant and tunability of BST/BZNT bilayered thin films simultaneously decreased with the increasing thickness of BZNT films. The BST/BZNT bilayered thin film with a 50 nm BZNT cover layer gave the largest figure of merit (FOM) of 33.48 with the upper tunability of 55.38%. The asymmetric electrical behavior of BST/BZNT bilayered films is probably related to an internal electric field caused by built-in voltages at Pt/BST and BZNT/Au interfaces.