一种明显提高相位测距分辨率的方法

本文从原理和实验两方面提出了一种明显提高相位测距分辨率的方法.应用差频模拟锁相环(APLL)专用集成电路KD080H,作者设计制作出一种环路噪声带宽小于1Hz的晶体分频APLL,并成功用于相位检测频率1.5kHz的相位测距系统.实验表明,在光电信号频率为15MHz,晶体滤波器带宽500Hz,所得信号信噪比仅为40dB的条件下,测距分辨率可优于0.5mm,比应用中心频率1.5kHz带宽50Hz的有源滤波器测距系统的分辨率提高约7倍.该方法还具有结构简单,成本低,使用方便等优点.     

集成锁相环在激光脉冲调制系统中的应用

锁相环由鉴相器、环路滤波器及压控震荡晶体组成,是一个能跟踪输入信号频率和相位的闭环自动控制系统。研制的激光脉冲调制系统采用锁相技术,以单片、集成锁相环代替分立元件,实现了片内鉴频和鉴相的功能。研制的腔倒空驱动器能够输出 4MHz, 800kHz, 400kHz, 80kHz,40kHz, 8kHz, 4kHz, 800Hz, 400Hz 等不同重复频率的脉冲信号,输出功率达到瓦级,满足了声光布拉格池的要求。该激光脉冲调制系统已经应用在皮秒时间相关单光子计数光谱仪系统中,取得了比较理想的效果。     

交叉耦合腔体带通滤波器的设计

本文分析了同轴线谐振器,并提出利用同轴线谐振器作为基本的滤波谐振单元,设计了一个通带中心频率870MHz,3dB带宽50MHz的带通滤波器。通过提取各谐振单元之间的耦合系数以及外部Q值,可以准确的设计这种低插损高抑制的腔体带通滤波器。     

基于LTCC技术的高性能级联带通滤波器的研究

提出了一种基于LTCC技术的高性能级联带通滤波器的实现方法。该滤波器电路在通过交叉耦合增加传输零点的同时又通过两个四谐振级半集总半分布式结构的滤波器级联而成,大大提高了滤波器的带外抑制度。借助电路仿真以及电磁场三维仿真软件进行优化仿真,实际测试结果与仿真结果吻合较好,中心频率为140MHz,带宽为20MHz,在0 MHz至115MHz频率以及200MHz至300MHz频率上的衰减均优于40d B,尺寸仅为9mm×3.2mm×1.5 mm。由于该滤波器频率较低,属VHF波段,波长较长,本设计中采用了半集总半分布结构来实现滤波器的小型化。     

加速度计模拟输出的Σ-Δ压频转换新方法

设计了一种基于∑-△调制器技术的新型电压一频率转换器,用于将微加速度计的模拟电压信号转换为相应的频率输出信号．该电路采用中国电子科技集团24所的4μmP阱标准CMOS工艺参数进行模拟仿真．在10V电源电压下,时钟频率为1．04MHz,其输入电压范围为1．5V～8．5V,输出频率范围为40kHz-533kHz,转换灵敏度约为134kHz／V,非线性度不大于0．08％．仿真结果证明,其对于恒定输入电压具有稳定的输出频率以及正负两种转换特性,因此可广泛应用于加速度计等矢量传感器的模数转换接口电路．     

加速度计模拟输出的∑-△压频转换新方法

设计了一种基于∑-△调制器技术的新型电压一频率转换器,用于将微加速度计的模拟电压信号转换为相应的频率输出信号．该电路采用中国电子科技集团24所的4μmP阱标准CMOS工艺参数进行模拟仿真．在10V电源电压下,时钟频率为1．04MHz,其输入电压范围为1．5V～8．5V,输出频率范围为40kHz-533kHz,转换灵敏度约为134kHz／V,非线性度不大于0．08％．仿真结果证明,其对于恒定输入电压具有稳定的输出频率以及正负两种转换特性,因此可广泛应用于加速度计等矢量传感器的模数转换接口电路．     

用于加速度计接口电路的新型Σ-Δ电压-频率转换器的设计

设计了一种基于Σ-Δ调制器技术的新型电压．频率转换器，可用于加速度计接口电路将模拟电压信号转换成相应的频率输出信号，且其对于恒定输入电压具有稳定的输出频率，具有正负两种转换特性．采用中国电子科技集团二十四所的4μm P阱标准CMOS工艺参数对电路进行了模拟仿真．在10V电源电压下，其时钟频率为1．04MHz，输入电压范围为1．5—8．5V，输出频率范围为40-533kHz，转换灵敏度约为134kHz/V，非线性度小于0．08％．仿真结果表明，其可广泛应用于矢量传感器的模数转换接口电路．     

金属手性材料复合水泥砂浆的电磁屏蔽性能

电磁屏蔽建筑材料在当今信息化社会中具有重要的应用价值。在水泥砂浆中添加金属螺旋圈材料,在10kHz～1500MHz范围内进行电磁屏蔽性能测试。结果显示,随着频率的增加,屏蔽性能一般逐渐增强,在550MHz、1050MHz附近都有2个明显的拐点;在10kHz～550MHz范围,屏蔽效能都小于4dB;但在900～1050MHz频率范围内,最大屏蔽效能都能够超过10dB。     

薄膜厚度对多层膜巨磁阻抗效应的影响研究

采用磁控溅射方法在玻璃基片上制备了FeSiB／Cu／FeSiB多层膜,在100kHz～40MHz范围内研究了FeSiB薄膜厚度对FeSiB／Cu／FeSiB多层膜巨磁阻抗效应的影响。当磁场施加在薄膜的纵向时,巨磁阻抗效应随磁场的增加而增加,在某一磁场下达到最大值,然后随磁场的增加而下降到负的巨磁阻抗效应。当FeSiB薄膜的厚度为1．8μm时,在频率3．2MHz、磁场2．4kA／m时,多层膜巨磁阻抗效应达最大值13．5％;在磁场为9．6kA／m时,巨磁阻抗效应为-9．2％。然而,当FeSiB薄膜的厚度为1μm时,多层膜的巨磁阻抗效应在频率40MHz、磁场1．6kA／m时达最大值5．8％。另外,当磁场施加在薄膜的横向时,薄膜表现出负的巨磁阻抗效应。对于膜厚为1．8μm的FeSiB薄膜,在频率5．2MHz、磁场9．6kA／m时,巨磁阻抗效应为-12％。可见巨磁阻抗效应的最大值及负的巨磁阻抗效应与多层膜中磁各向异性轴的取向及FeSiB薄膜的厚度有关。     

半集总结构小型化带通滤波器的研究

此款带通滤波器的频率较低,波长较长,属于VHF波段,为保证尺寸的小型化,采用了半集总半分布结构的设计方法。而加工工艺上选取了先进的LTCC技术,确保了滤波器性能的优良。为了有效提高带外抑制,此款滤波器在以交叉耦合加入了传输零点的同时,又级联了两个滤波器。在经过电路仿真和电磁场三维仿真软件优化后,得出的测试结果均满足技术指标。滤波器的中心频率在170MHz,带宽60MHz,在50MHz至100MHz频率以及280MHz至400MHz频率上的衰减均优于20d B,尺寸仅为9mm×3.2mm×1.5 mm。     

Ultrasonic attenuation in human calcaneus from 0.2 to 1.7 MHz

Ultrasonic attenuation has been demonstrated to be a useful measurement in the diagnosis of osteoporosis. Most studies have employed ultrasound in a range of frequencies from about 200 kHz-300 kHz to 600 kHz-1 MHz, and many have assumed a linear dependence of attenuation on frequency. In order to investigate the attenuation properties of human calcaneus at higher frequencies, 16 defatted human calcanea were interrogated in vitro using two matched pairs of transducers with center frequencies of 500 kHz and 2.25 MHz. The linear dependence of attenuation on frequency seems to extend up to at least 1.7 MHz. The correlation between attenuation coefficient and frequency from 400 kHz to 1.7 MHz was r = 0.999 (95% confidence interval, CI, = 0.998-1.00). The measurements suggest that some deviations from linear frequency dependence of attenuation may occur at lower frequencies (below 400 kHz), however.     

A torsional transducer through in-plane shearing of paired planar piezoelectric elements

A torsional microtransducer for high-power applications was developed using standard bulk lead zirconium titantate (PZT) placed upon a small rectangular prism made from phosphor bronze, with a tapered conical end serving as a horn and a machined interior to improve the actuator's response. Torsion was obtained from a prototype at the design frequency of 192 kHz as well as over a wide range of frequencies from 136 kHz to 1.02 MHz. Torsional vibration velocities of 335 mm/s at 192 kHz were measured at 27.3 V(RMS) on the 1.5-mm diameter output tip, amounting to 25,600 degree/s vibration velocity along the outer circumference of the tip. At 1.02 MHz, a torsional vibration velocity of 1750 mm/s (134,000 degree/s) at 17.8 V(RMS) was obtained through use of the thickness mode of the PZT elements. Using the design described in this study, high-power torsional transducers with diameters of 5 mm and below are now possible.     

Influence enhancement effect of bi-frequency ultrasonic irradiation by TA fluorescence method

Based on a previous research of cavitation effect under bi-frequency ultrasound irradiation, this paper studies bi-frequency irradiations with similar experimental settings. The additional irradiation sources with frequencies of 1.04MHz, 0.8MHz and 1.7MHz are individually combined with the main ultrasonic irradiation source with frequency of 28kHz to form bi-frequency ultrasonic irradiation. The intensity of 28kHz irradiation was fixed at 12.5W/cm2, while the intensity of the ultrasound at the other three frequencies is varied from1 W/cm2 to 18 W/cm2. It turns out that under the influence of the bi-frequency irradiation, the fluorescence intensity is obviously greater than the sum of those at individual frequencies. So the frequency of the additional sonication strikingly influences the fluorescence enhancement effect. For example, the fluorescence enhancement effect of 1.04MHz is stronger than that of 1.7MHz, and the enhancement effect of 0.8MHz is further stronger than that of 1.04MHz. Under the sonic intensity of 7.9W/cm2, the fluorescence intensity of 1.04MHz is approximately twice that of 1.7MHz while the fluorescence intensity of 0.8MHz is approximately 1.5 times that of 1.04MHz.     

Dielectrophoresis of DNA: time- and frequency-dependent collections on microelectrodes

This paper reports measurements that characterize the collection of DNA onto interdigitated microelectrodes by high-frequency dielectrophoresis. Measurements of time-dependent collection of 12 kilobase pair plasmid DNA onto microelectrodes by dielectrophoresis show significant reduction in the response as the frequency increases from 100 kHz to 20 MHz. Collection time profiles are quantitatively measured using fluorescence microscopy over the range 100 kHz to 5 MHz and are represented in terms of two parameters: the initial dielectrophoretic collection rate, and the initial to steady-state collection transition. Measured values for both parameters are consistent with trends in the frequency-dependent real part of the effective polarizability measured for the same plasmid DNA using dielectric spectroscopy. The experimentally measured parameters are qualitatively compared with trends predicted by theory that takes into account dielectrophoretic particle movement and diffusion. The differences between experiment and theory are discussed with suggested improvements to theoretical models, for example, including the effects of electrohydrodynamically driven fluid motion.     

Dielectrophoresis of DNA: time- and frequency-dependent collections on microelectrodes

This paper reports measurements that characterize the collection of DNA onto interdigitated microelectrodes by high-frequency dielectrophoresis. Measurements of time-dependent collection of 12 kilobase pair plasmid DNA onto microelectrodes by dielectrophoresis show significant reduction in the response as the frequency increases from 100 kHz to 20 MHz. Collection time profiles are quantitatively measured using fluorescence microscopy over the range 100 kHz to 5 MHz and are represented in terms of two parameters: the initial dielectrophoretic collection rate, and the initial to steady-state collection transition. Measured values for both parameters are consistent with trends in the frequency-dependent real part of the effective polarizability measured for the same plasmid DNA using dielectric spectroscopy. The experimentally measured parameters are qualitatively compared with trends predicted by theory that takes into account dielectrophoretic particle movement and diffusion. The differences between experiment and theory are discussed with suggested improvements to theoretical models, for example, including the effects of electrohydrodynamically driven fluid motion.     

Wideband on-wafer noise measurement setup for noisecharacterization of active devices in the low VHF band

This paper addresses a new wideband on-wafer measurement test set designed for noise characterization of microwave active devices over the frequency range of 300 kHz to 150 MHz. Noise parameters obtained from the multiple impedance technique on a GaAlAs/GaAs heterojunction bipolar transistor (HBT) from 300 kHz to 70 MHz are reported and compared with low-frequency noise data. Investigation of the excess noise sources of III-V HBT's is performed well above the 100 kHz frequency limit of standard dynamic signal analyzers and noise modeling of these devices is reported     

Tunable ferroelectric capacitor-based voltage-controlled oscillator

Ferroelectric capacitors made from Ba(1-0.5)Sr0.5TiO3 (BST) are applied as varactors in tunable, high-frequency circuit applications. In this context, a voltage-controlled oscillator (VCO) has been designed and implemented using discrete RF bipolar junction transistor (BJTs) and tunable ferroelectric capacitor. The designed VCO has a tuning range from 205 MHz to 216.3 MHz with a power dissipation of 5.1 mW. The measured phase noise is -90 dBc/Hz at 100 kHz and -140 dBc/Hz at 1 MHz offset.     

Characterization of Capacitance Standards at High Frequency at National Physical Laboratory,India

Four-terminal-pair air dielectric capacitance standards with nominal values of 1000 and 100 pF have been characterized up-to 10 MHz at NPLI. The procedure employed involves the determination of all capacitive and inductive parameters of the simple electrical-equivalent-circuit-model of these capacitance standards. The effective capacitance of each standard has also been computed as a function of frequency from 1 kHz to 10 MHz. The capacitive parameters have been measured at 1 kHz while inductive parameters have been estimated up to 10 MHz using linear regression analysis by employing least-squares-approximation method. The paper highlights the computation procedure of impedance terms which further requires the determination of various capacitive and inductive terms involved in the calculation of effective capacitance. The method employed for the estimation of inductive parameters as a function of frequency is also discussed in detail. The present work will help in the establishment of metrological traceability of capacitance standards at high-frequency at NPLI which will be further used to establish calibration facility for LCR meters and RF impedance analyzers for capacitance parameter up-to 10 MHz.     

Design of a MEMS discretized hyperbolic paraboloid geometry ultrasonic sensor microarray

Design of a discretized hyperbolic paraboloid geometry beamforming array of capacitive micromachined ultrasonic transducers (CMUT) has been presented. The array can intrinsically provide a broadband constant beamwidth beamforming capability without any microelectronic signal processing. A mathematical model has been developed and verified to characterize the array response. A design methodology has been presented that enables determination of the array's physical dimensions and CMUT modeling in a straightforward manner. Developed methodology has been used to design two discretized hyperbolic paraboloid geometry beamforming CMUT arrays: one in the 2.3 MHz to 5.2 MHz frequency range and another in the 113 kHz to 167 kHz frequency range. CMUTs have been designed using a cross-verification method that involves lumped element modeling, 3-D electromechanical finite element analysis (FEA), and microfabrication simulation. The developed array has the potential to be used in real-time automotive collision-avoidance applications, medical diagnostic imaging and therapeutic applications, and industrial sensing.     

NIST Sampling System for Accurate AC Waveform Parameter Measurements

This paper summarizes efforts at the National Institute of Standards and Technology (NIST) to develop a waveform sampling and digitizing system with accuracy comparable to that of an ac-dc thermal transfer standard for ac voltage measurements over the frequency range of 10 Hz to 1 MHz. In the frequency range from 1 kHz to 1 MHz, the sampler's gain flatness is better than that available from the best commercial digital multimeter. In ac-ac comparisons referenced to 1 kHz, the system agrees with a NIST-calibrated thermal transfer standard to within 17 muV/V from 20 Hz to 100 kHz for measurements made at both 1 and 0.1 V. The sampler's excellent dynamic linearity and flat input impedance are also discussed