外腔激光器实现波长变换的理论及实验

理论上从半导体激光器的速率方程出发,利用其增益饱和效应,提出了光纤光栅外腔半导体激光器实现波长变换的理论模型。利用此模型对入射波为高斯波时的波长变换进行了数值模拟。实验实测了光纤光栅外腔半导体激光器的波长变换前后的谱线,得到带宽 0.1nm,边模抑制比为37.9dB 的激光谱线,并且利用此波长的外腔激光器得到了波长转换间隔为 8nm 的激光谱线。理论分析和实验结果证明,光纤光栅外腔半导体激光器在实现波长变换方面具有很好的线性响应特性。     

大功率激光器研究创新成果填补国内空白

我国大功率激光器研究取得创新成果,近日,由中科院长春光机所完成的吉林省科技厅发展计划项目“半导体电泵浦集成微腔激光器”、“高功率光纤激光器”和“980nm垂直腔面发射激光器输出功率的提高”在长春分别通过专家鉴定,整体均处于国内领先水平,并填补了国内空白。     

大功率半导体激光器腔面镀膜的理论研究

从平面波假设出发推导了多层薄膜的特性矩阵，得到了膜系的反射率计算公式。研究了腔面反射率对大功率半导体激光器的外量子效率、阈值增益和输出功率比的影响，并给出了整个膜系反射率随膜层的光学厚度、折射率差及其层数的变化趋势。该模型对半导体激光器的腔面膜层设计具有实际的指导意义。     

光子晶体微腔半导体激光器的研究进展

概述了光子晶体微腔半导体激光器的研究进展，从物理机理、数值模拟、以及工艺实现方法等方面作了详细的叙述，并对其在光子集成中的应用前景进行了展望。     

高功率半导体激光器阵列微通道热沉的温度

微通道热沉是解决高功率半导体激光器阵列散热有效的途径,本文利用有限元方法研究半导体激光器的温度,给出了横向尺寸为200 μm×60 μm单个及间距100μm的3,5,9的微通道热沉中的温度,得到微通道数量影响激光器最高温度变化.结果表明,单个微通道构成的热沉可以把注入电流为36 A稳态工作的激光器阵列冷却到342 K,9个微通道可以冷却到306 K.仿真了增加微通道间距的温度分布,发现为间距260 μm的5个微通道热沉,可以将激光器冷却到308 K.     

ZnSe光学薄膜对GaAs表面特性的影响

GaAs基半导体激光器芯片在空气中解理后,解理腔面会被空气氧化形成腔面缺陷,在腔面形成的缺陷严重影响了器件的寿命.用GaAs衬底表面模拟半导体激光器的解理腔面,研究了不同的光学薄膜对GaAs表面特性的影响.研究结果表明暴露在大气中的GaAs表面会形成Ga2O3、As2O3和As2O5缺陷.在表面镀含氧光学膜的GaAs表面上会形成少量Ga2O3缺陷,不形成As2O3和As2O5缺陷,在表面镀ZnSe光学薄膜的GaAs表面没有形成Ga2O3缺陷,也没有形成As2O3和As2O5缺陷.在GaAs表面上蒸镀ZnSe光学薄膜能有效地抑制GaAs表面缺陷的形成,提高半导体激光器的寿命.     

半导体激光器后腔面高反射涂层的研究

采用金属银(Ag)做为高反射镀膜材料，ZrO2介质膜作为与激光器端面的绝缘层和Ag保护膜，在激光器后腔面实现了高反射涂层。经激光器光电特性测试表明，该高反射膜系能使激光器输出功率提高60％，阈值电流减小20％～50％，并且具有良好的化学稳定性、热稳定性和机械强度，能有效保护半导体激光器后腔面。     

半导体激光器的新秀——微碟激光器

主要概述国内外半导体微碟激光器的发展现状以及制备技术。     

线性调频激光双干涉仪绝对距离测量的研究

提出一种双干涉仪绝对距离方法，利用参考干涉仪的误差补偿作用，有效地抑制了激光器光学特性相关误差源对外腔半导体激光器线性调频绝对距离干涉测量系统的影响，提高了测距精度。文中介绍了测量原理和实验装置，作了误差补偿分析，并给出实验结果。     

用于泵浦固体激光器的大功率半导体激光材料及器件实用化研究

本课题采用分子束外延技术,生长高质量的大功率半导体激光器材料,并制备高性能的大功率半导体激光器器件,提供给八六三项目的其它课题,制做大功率半导体激光光纤耦合模块,为全固态绿、蓝光激光器系统提供高性能的泵浦源。 经过近5年的研究,在大功率半导体激光器材料生长和器件制备方面取得了很大进展。(1)研制出的808nm,大功率量子阱激光器材料阈值电流密度低(300～400A/cm~2),发光波长准确(808.7±3.0nm)均匀性比较高。(2)用它制备的808nm大功率量     

半导体激光器稳频综述

在冷原子干涉实验中需要用激光冷却并操控原子,因此对半导体激光器频率的稳定性要求较高。由于半导体激光器本身线宽较大,功率稳定性差,还可能产生慢漂和跳模等现象,故需对半导体激光器进行稳频。本文介绍了饱和吸收谱稳频、波长调制稳频、调制光谱稳频、调制转移光谱稳频、双色激光稳频、频率电压转换稳频6种冷原子干涉实验中常用的稳频方法,分别阐述了各方法的原理、特点、适用领域,为半导体激光器的实际应用提供了参考。     

外腔式半导体激光器的输出光谱

用射线法导出了两段式激光器的输出谱公式，分析了外腔式半导体激光器的输出光谱，计算了ＥＣＬＤ被调二极管模式的不同波长处振时的阈值，获得了ＥＣＬＤ模式的波长表达式，讨论了二极管靠近光栅的一面的反射率的波长特性对输出的影响。     

Gaussian-optics-based optical modeling and characterization of a Fabry-Perot microcavity for sensing applications

A generalized study has been carried out on the modeling of a Fabry-Perot microcavity for sensing applications. Different analytical models on transmission characteristics of a Fabry-Perot microcavity are established by using plane-wave-based techniques, such as the Macleod characteristic matrix technique, the transfer matrix technique, and Smith's technique. A novel Gaussian-optics-based model for a Fabry-Perot microcavity illuminated by a laser beam is then developed and validated. The influence of laser beam waist on microcavity optical response is investigated, and the required minimal beam waist size is explored to ensure a useful optical response for sensing applications that can be accurately predicted by plane-wave optics. Also, the perturbations of microcavity performance induced by different types of microcavity mirror imperfections are discussed, based on the novel optical model. The prototype of the proposed Fabry-Perot microcavity for sensing applications has been successfully fabricated and characterized.     

Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping

The fundamental possibility of achieving temperature stability of laser emitters of 1.3-μm spectral range exhibiting a vertical microcavity and an active region based on InAs/InGaAs quantum dots (QDs) is investigated. It is demonstrated that using an undoped hybrid vertical optical microcavity formed by a lower undoped semiconductor and an upper distributed dielectric Bragg reflectors allows obtaining laser oscillation up to a temperature of ~100°C at nearly constant threshold optical pump power for an active region consisting of QD layers under optimal spectral mismatch between the position of maximum gain of the QD ground state and the resonance wavelength.     

Optical Frequency Metrology of an Iodine-Stabilized He-Ne Laser Using the Frequency Comb of a Quantum-Interference-Stabilized Mode-Locked Laser

We perform optical frequency metrology of an iodine-stabilized He-Ne laser using a mode-locked Ti:sapphire laser frequency comb that is stabilized using quantum interference of photocurrents in a semiconductor. Using this technique, we demonstrate carrier-envelope offset frequency fluctuations of less than 5 mHz using a 1 s gate time. With the resulting stable frequency comb, we measure the optical frequency of the iodine transition [¹²⁷I₂ R(127) 11-5 i component] to be 473 612 214 712.96 ± 0.66 kHz, well within the uncertainty of the CIPM recommended value. The stability of the quantum interference technique is high enough such that it does not limit the measurements.     

半导体激光泰伯干涉仪和夹层光栅干涉术

本文报道适用于象传感和数字处理系统的半导体激光泰伯(Talbot)干涉仪和夹层光栅干涉术在半导体激光准直调整中的应用,并给出实验结果。     

Optical switching and normal mode splitting in hybrid semiconductor microcavity containing quantum well and Kerr medium driven by amplitude-modulated field

ABSTRACT

We theoretically investigate optical bistability/multistability for all optical switching signature in a hybrid semiconductor microcavity system comprising a quantum well and a Kerr nonlinear substrate. The system is essentially two optically coupled microcavities with one of the microcavity being driven by an external amplitude-modulated pump laser. We show that the switching between bistable and multistable behaviour is influenced by the modulated pump laser, Kerr nonlinearity and the optical coupling between the two microcavities. We further investigate the intracavity spectrum of quantum fluctuations which exhibit the well-known normal mode splitting (NMS). The NMS behaviour is also found to be influenced by the system parameters. These results demonstrate that the present hybrid nonlinear system can be used in designing sensitive optical devices.     

Efficient upconversion-pumped continuous wave Er3+:LiLuF4 lasers

We report on detailed spectroscopic investigations and efficient visible upconversion laser operation of Er³⁺:LiLuF₄. This material allows for efficient resonant excited-state-absorption (ESA) pumping at 974 nm. Under spectroscopic conditions without external feedback, ESA at the laser wavelength of 552 nm prevails stimulated emission. Under lasing conditions in a resonant cavity, the high intracavity photon density bleaches the ESA at 552 nm, allowing for efficient cw laser operation.We obtained the highest output power of any room-temperature crystalline upconversion laser. The laser achieves a cw output power of 774 mW at a slope efficiency of 19% with respect to the incident pump power delivered by an optically-pumped semiconductor laser. The absorption efficiency of the pump radiation is estimated to be below 50%.To exploit the high confinement in waveguides for this laser, we employed femtosecond-laser pulses to inscribe a cladding of parallel tracks of modified material into Er³⁺:LiLuF₄ crystals. The core material allows for low-loss waveguiding at pump and laser wavelengths. Under Ti:sapphire pumping at 974 nm, the first crystalline upconversion waveguide laser has been realized. We obtained waveguide-laser operation with up to 10 mW of output power at 553 nm.     

808nm半导体激光器的腔面反射率设计

通过对不同腔长的808nm半导体激光器单管进行P-I测试,提取出了材料内部参数,如内量子效率,内损耗、透明电流密度、模式增益等.根据得出的内部参数进行了腔面反射率设计,分析腔面反射率与功率转换效率的关系,得出了关系曲线.进行腔面镀膜实验,把实验值与计算值相比较,二者相吻合.通过这种腔面反射率设计方法,可以得到半导体激光器的最大功率转换效率,从而使其工作于优化状态下.     

Optically tuneable broadband terahertz metamaterials using photosensitive semiconductor material

We present optically tuneable broadband terahertz metamaterials consisting of photosensitive semiconductor material. The characteristics of semiconductor materials are very important for terahertz functional devices, which is strongly dependent on the photoexcited carriers in semiconductor materials. Based on the model of the generation of the carriers in semiconductor materials, the tuneability of the resonance frequency and resonance strength in terahertz metamaterials under the femtosecond laser pulse has been analysed. The experimental results of the transmissivities of several bare semiconductor materials show that GaAs semiconductor could be a potential candidate for broadband terahertz functional devices design. Moreover, the simulation results of the resonance frequency increase with the increase of the laser fluence, whereas the resonance strength near the resonance frequency is significantly weakened with the increase of the laser fluence. Meanwhile, the modulation depth can be reached approximately 90% at 1.24 THz. Our proposed broadband tuneable terahertz metamaterials have numerous potential applications, including terahertz modulator, absorber and switches.