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1.
Al/Al2O3陶瓷接合基板的制备及性能研究   总被引:2,自引:0,他引:2  
在675-825℃、氮气气氛下,使用石墨模具压铸的方法制备出Al/Al2O3电子陶瓷基板,利用力学拉伸试验机测试了Al和Al2O3的结合强度,界面抗拉强度>15.94MPa,使用金相显微镜、SEM等微观分析仪器研究了其界面的微观结构。  相似文献   

2.
采用等离子体浸没离子注入与沉积技术,设计制备梯度纳米CrAlN复合涂层,利用X射线衍射仪、透射电子显微镜、纳米探针和理论计算分析等方法,系统研究涂层微观组织结构、力学性能和承载失效行为。研究表明:梯度纳米CrAlN涂层具有优异的纳米力学性能,并显著提高镁合金表面承载能力。动态承载过程中,接触载荷诱发金属Al和AlN界面高应力状态,Al金属层承受强烈的弹-塑性变形,当界面应力大于Al金属层屈服极限时,在靠近Al/AlN界面处萌生疲劳裂纹并最终导致涂层体系承载失效。本研究成果为软基体表面高强韧梯度复合涂层的结构设计提供重要理论依据。  相似文献   

3.
Al/Al2O3陶瓷接合基板的制备及性能研究   总被引:3,自引:0,他引:3  
在675~825°C、氮气气氛下,使用石墨模具压铸的方法制备出Al/Al2O3电子陶瓷基板,利用力学拉伸试验机测试了Al和Al2O3的结合强度,界面抗拉强度>15.94MPa,使用金相显微镜、SEM等微观分析仪器研究了其界面的微观结构.  相似文献   

4.
采用金属有机物化学气相沉积法(MOCVD)在硅(Si)衬底制备铝/氮化铝/氮化镓(Al/AlN/GaN)多层薄膜,使用光学显微镜(OM)、原子力显微镜(AFM)、X射线衍射(XRD)等手段表征AlN和GaN薄膜的微观结构和晶体质量,研究了TMAl流量对AlN薄膜和GaN薄膜的形核和生长机制的影响。结果表明,预沉积Al层能促进AlN的形核和生长,进而提高GaN外延层的薄膜质量。TMAl流量太低则预沉积Al层不充分,AlN缓冲层的质量取决于由形核长大的高结晶度AlN薄膜与在气氛中团聚长大并沉积的低结晶度AlN薄膜之间的竞争,AlN薄膜的质量随着TMAl流量的升高而提高,GaN薄膜的质量也随之提高。TMAl流量太高则预沉积Al层过厚,AlN缓冲层的质量取决于由形核长大的高结晶度AlN薄膜与Al-Si回融蚀刻之间的竞争,AlN薄膜的质量随着TMAl流量的升高而降低,GaN薄膜的质量也随之降低。  相似文献   

5.
用AlN聚合物先驱体溶液浸渍、烧结的方法,在C纤维表面制备AlN涂层。用挤压铸造法制备有涂层的C_((t))/Al复合材料。研究了AlN涂层在C_((t))/Al复合材料中所起的作用,结果表明:AlN涂层可有效地改善C纤维与Al基体的相容性,提高C_((t))/Al复合材料界面的高温稳定性。  相似文献   

6.
CaO-Y2O3添加剂对AlN陶瓷显微结构及性能的影响   总被引:5,自引:0,他引:5  
研究了掺杂CaO-Y2O3热压烧结和常压烧结AlN陶瓷的性能和显微结构.结果表明:热压烧结AlN陶瓷的第二相为Y3Al5O12,常压烧结AlN陶瓷的第二相为Y3Al5O12和Ca3Y2O6;热压烧结AlN的第二相体积百分数和晶格氧含量均低于常压烧结;热压烧结AlN陶瓷的微观结构良好,其热导率达到200W/m@K.  相似文献   

7.
45Mn17Al3低磁钢质优价廉,但在海水中使用腐蚀严重.通过对45Mn17Al3奥氏体低磁钢试样进行室内腐蚀挂片试验、电化学性能测试、显微腐蚀试验及冶金因素分析,初步探讨了该型钢在海水介质中发生腐蚀的微观机制.室内腐蚀挂片试验和电化学性能测试结果表明,低磁钢的耐蚀性比3C钢要差;显微腐蚀试验结果证明,钢中的夹杂会诱发点蚀;冶金因素分析结果显示,钢中存在大量的AlN夹杂物,而且其微观组织比3C钢的粗大.45Mn17Al3中高的Al含量和大量的AlN夹杂的存在对该型钢耐海水腐蚀性能有重要的影响.  相似文献   

8.
采用射频磁控溅射法制备了非晶TbFeCo薄膜及其保护层AlN薄膜,并研究保护层对薄膜的磁和磁光特性的影响。结果表明,AlN薄膜可以增强薄膜磁光效应,同时,AlN薄膜对TbFeCo磁光薄膜的矫顽力、垂直磁各向异性以及本征克尔角都有一定的影响。其原因来自于溅射过程中N和Al原子对TbFeCo薄膜表面的轰击而导致的界面特性的改变。  相似文献   

9.
用MOCVD 技术在(0001)蓝宝石衬底上成功研制了2寸衬底上无裂纹的AlN/Al0.3Ga0.7N超晶格材料.研究了AlxGa1-xN/AlN超晶格材料特性. 结果表明,缓冲层材料和结构对AlN/Al0.3Ga0.7N超晶格的表面型貌和界面特性有很大的影响.AFM研究表明利用GaN做支撑层生长的AlN/Al0.3Ga0.7N超晶格材料是一种准二维生长模式.XRD和SEM研究表明研制的材料表面平整、界面清晰、并且材料具有完整的周期重复性.利用紫外-可见光谱仪反射谱研究表明研制的30对AlN/Al0.3Ga0.7N超晶格材料在中心波长为313nm的紫外波段具有93.5%的反射率.  相似文献   

10.
通过同步热分析(simultaneous thermal analysis,STA)分析了Al在非高压氮气气氛下(压力0.2MPa,流速30ml/min)生成纳米AlN晶须的反应过程。分析了氮化的动力学过程。用环境扫描电子显微镜(environmental scanning electron microscopy,ESEM)观察了AlN及Al-AlN界面的显微结构。结果表明:在300-450℃之间,氮气即可在固-气界面处与气相铝发生反应生成AIN;从450℃开始,反应生成的AlN在未反应的Al表面沉积,以后一直持续至铝熔融;从熔点开始,熔融后的铝粉体在芯层中迅速团聚,阻碍氮化的进一步进行,但是在壳层中,氮化在液-气界面进一步进行,形成最终的芯-壳结构。ESEM的分析结果表明,在持续升温过程中,壳层中主要生成毛纤维状的纳米AIN晶须。芯层中主要通过VS机制生成大的AlN晶体。  相似文献   

11.
在氮气气氛下、保温10min、948~1098K利用活性金属铸接方法制备铝/氮化铝陶瓷基板,用力学试验机、扫描电子显微镜、高温金相光学显微镜和原子力显微镜对铝/氮化铝陶瓷的结合强度和机理进行研究.结合温度低于973K时,铝和氮化铝陶瓷之间的剥离强度随结合温度升高线性增大,当结合温度超过973K时,结合温度对强度影响很小,铝和氮化铝陶瓷之间的结合强度约为49N/mm,铝和氮化铝陶瓷之间的结合为物理湿润和化学反应湿润共同作用.  相似文献   

12.
Structure and strength of AlN/V bonding interfaces   总被引:2,自引:0,他引:2  
AlN ceramics are bonded using vanadium metal foils at high temperatures in vacuum. Different bonding temperatures were used in the range 1373–1773 K with bonding times of 0.3–21.6 ks. The AlN/V interfaces of the bonded joints were investigated using SEM, electron probe microanalysis and X-ray diffraction. A bonding temperature of 1573 K was found to be suitable to activate both parts to initiate a phase reaction at the interface, because a thin V(Al) solid solution layer formed adjacent to the ceramic at 1573 K just after 0.9 ks, and a small flake-shaped V2N reaction product formed inside the vanadium central layer. The formation of V(Al) and V2N controls the interfacial joining of the AlN/V system at 1573 K up to 5.4 ks bonding time. The pure vanadium layer quickly changed to vanadium-containing V2N. The diffusion path could be predicted for the AlN/V joints up to 0.9 ks at 1573 K following the sequence AlN/V(Al)/V2N/V, while after 0.9 ks, the interface structure changed to AlN/V(Al)/V2N + V by the growth Of V2N into the vanadium. The AlN/V joints shovyed no ternary compounds at the interface. A maximum bond strength could be obtained for a joint bonded at 1573 K after 5.4 ks having a structure of AlN/V(Al)/V2N + V. At 7.2 ks, nitrogen, resulting from AlN decomposition, escaped and the remaining aluminium reacted with V(Al) to form V5Al8 intermetallic, which is attributable to the decrease in bond strength.  相似文献   

13.
Interfacial structure and reaction mechanism of AlN/Ti joints   总被引:2,自引:0,他引:2  
Bonding of AlN to Ti was performed at high temperatures in vacuum. The bonding temperature ranged from 1323 to 1473 K, while the bonding time varied from 7.2 up to 72 ks. The reaction products were examined using elemental analysis and X-ray diffraction. TiN, Ti3AlN (τ1), and Ti3Al were observed at the AlN/Ti interface, having various thickness at different bonding conditions. The thickness of TiN and Ti3AlN layers grew slowly with bonding time. On the other hand, growth of the Ti3Al layer followed Fick’s law. The activation energy of its growth was found to be 146 kJ mol-1. When thinner Ti foil (20 μm) was joined to AlN at 1473 K for a long time (39.6 ks), the Ti central layer has completely consumed and another ternary compound Ti2AlN(τ2) started to form. A maximum bond strength was achieved for an AlN/Ti (20 μm) joint made at 1473 K for 28.8 ks, after which the bond strength of the joint deteriorated severely. This revised version was published online in November 2006 with corrections to the Cover Date.  相似文献   

14.
Diffusion couples of AlN/V were experimentally examined after annealing in a temperature range of 1373 K1773 K for a bonding time range of 0.9 ks21.6 ks. The interfacial reaction, reaction mechanism, and bond strength of the bonded AlN/V couples have been explained on the basis of phase relations at different bonding conditions, making use of elemental analysis, XRD, and shear testing method. Formation of V(Al) solid solution and V2N nitride controls the interfacial joining of the AlN/V couples. A complete diffusion path between AlN and V could be predicted at 1573 K before 0.9 ks, following a sequence of AlN/V(Al)/V2N/V. This sequence can be discussed during the Al-V-N ternary phase diagram. At a high temperature of 1573 K, AlN decomposition at the interface took place. A maximum bond strength could be obtained for a joint bonded at 1573 K after 5.4 ks, having a structure of AlN/V(Al)/V2N + V.  相似文献   

15.
Transition liquid-phase insert metal bonding of Al2O3 and AISI 304 stainless steel based materials is investigated. This joining technique allows the continuous replenishment of the active solute which is consumed by the chemical reaction that occurs at the ceramic/filler metal interface. Replenishment is facilitated by employing a sandwich of filler materials comprising tin-based filler metal and amorphous Cu50Ti50 or NiCrB interlayers. During Al2O3/AISI 304 stainless steel bonding, the highest shear strength properties are produced using a bonding temperature of 500 °C. Thick reaction layers containing defects form at the ceramic/filler material interface when higher bonding temperatures are applied. Bonding at temperatures above 500 °C also increases the tensile residual stress generated at the periphery of Al2O3/AISI 304 stainless steel joints. The shear strength of joints produced using NiCrB interlayers markedly increased following heat treatment at 200 °C for 1.5 h. Heat treatment had little influence on the shear strength of the joint produced using Cu50Ti50 interlayers. This revised version was published online in November 2006 with corrections to the Cover Date.  相似文献   

16.
将铝铅合金带分别与热浸纯Al、Al-2%Si合金的钢板进行热轧复合。研究了元素硅、热浸时间、金属间化合物层厚度及缺口界面分数对结合强度的影响。结果表明,在复合过程中产生两种不同界面,铝铅合金与热浸铝钢板通过缺口界面和化合物界面而结合。总的结合强度主要取决于缺口界面强度的大小与分数的高低,而且与后者之间呈线性关系。硅对总结合强度的影响体现在:虽然对化合物界面强度的影响较小,但显著提高缺口界面强度,因而使总结合强度明显提高。在给定实验条件下,使热浸纯Al时的缺口界面强度从约为化合物界面强度的4倍提高到热浸Al-2%Si时的近6倍。  相似文献   

17.
氮化铝陶瓷表面钛金属化的研究   总被引:6,自引:0,他引:6  
黄奇良  潘伟  胡忠 《材料导报》2002,16(2):66-68
利用熔盐热歧化反应在氮化铝陶瓷表面上成功地进行了钛金属化,成功地在氮化铝陶瓷表面上制备了钛金属化膜。还研究了温度、反应物浓度、反应时间对钛金属化膜厚度的影响。研究了金属膜的组成及界面反应机理和界面层的显微结构。研究发现,在热歧化反应沉积钛金属膜的过程中,沉积到AlN陶瓷表面的钛金属与AlN发生反应生成TiN0.3、TiN和Ti9Al23。  相似文献   

18.
The atomic structure of AlN/Al2O3 interface fabricated by pulsed laser deposition is characterized by high-resolution transmission electron microscopy (HRTEM) combined with systematic multi-slice HRTEM image simulations. It is found that the AlN film deposited on a (0001) Al2O3 substrate grows epitaxially with the orientation relationship of (0001)AlN//(0001) Al2O3 and [ ]AlN//[ ]Al2O3, with an atomically sharp interface. The observed interface showed best correspondence with the rigid structural model that AlN is terminated by Al at the interface, while the Al2O3 substrate is terminated by O. Detailed structural analysis indicates that Al sites at the interface are coordinated by both oxygen and nitrogen in this model, with similar coordination environment in AlN. This favored coordination state at the interface may stabilize the AlN/Al2O3 interface.  相似文献   

19.
The adhesion strength of Ti/Ni/Ag multi-layers on AlN substrates before and after thermal cycling treatment was studied. The Ti/Ni/Ag layers with thicknesses of 0.6, 1.0, and 0.2 μm, respectively, were deposited sequentially on bulk AlN substrates using direct current (DC) sputtering. Thermal cycling test (TCT) was conducted for 0, 15, 100, and 300 cycles to measure the adhesion strength of Ti/Ni/Ag on AlN. The adhesion strength of the deposited specimen increased slightly over 15 thermal cycles and increased abruptly after 100 thermal cycles. After 100 thermal cycles, Ti reacted with AlN substrate to form TiN and TiO. The formation of TiN and TiO at the Ti/AlN interface may be responsible for the increase of the adhesion strength after a large number of thermal cycles.  相似文献   

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