超薄Al膜可见、红外光区吸收率的尺寸效应

超薄Al膜吸收率随薄膜厚度变化的关系表明：金属薄吸收率具有尺寸效应,并具有极大值。对比超薄Al膜生长过程的结构变化,结构特征变化是导致吸收率尺寸效应的重要原因。     

纳米Al膜在可见和红外频段吸收率的尺寸效应

纳米A1膜在可见的红外频段的吸收率随薄膜厚度变化的关系表明,金属薄膜吸收率具有尺寸效应,并具有极大值,对比纳米A1膜直流电导率的实验结果,结构特征变化是导致吸收率尺寸效应的重要原因。     

超薄金属膜电阻率尺寸效应

研究了超薄铝膜的厚度与电阻率。晶粒度之间的关系。结果表明：随薄膜平均厚度减小，晶粒度减小，电阻率增大，呈现尺寸效应。综合利用Ｆ－Ｓ模型，Ｍ－Ｓ模型以及Ｍａｔｔｈｉｅｓｓｅｎ定则定量分析了表面和晶界的电子散射对电阻率尺寸效应的贡献。     

超薄Al膜可见光光学特性与其特征尺寸的关系

利用WFZ90 0 D4型紫外 /可见光分光光度计 ,测量了磁控测射超薄Al膜的可见光反射比和透射比。采用牛顿 辛普森方法确定超薄Al膜光学函数 ,进而计算其介电函数 ,得到了它们随膜厚变化的关系。结果表明 ,不同特征尺寸的薄膜 ,具有不同的电磁特性参数     

纳米结构电磁工程微观原理研究

本文分析了金属／电介质纳米多层膜的电磁响应和能量转换的物理原理，提出了基本理论框架，讨论了电磁响应的前提条件，透射效应、电磁响应模式、等离子模型、响应模式效率和本构特性的尺寸效应。实验结果表明，超薄Ａｌ、Ｔｉ、Ｆｅ膜在纳米范围内，随厚度变化，电导率、光学常数、介电常数、磁导率、载流子浓度和等离子体共振均存在尺寸效应。本文还讨论了纳米结构设计的基本原理。     

超薄Al膜可见光光学特性与其特征尺寸的关系

利用ＷＦＺ９００－Ｄ４型紫外／可见光分光光度计,测量了磁控溅射超薄Ａｌ膜的可见光反射比和透射比。采用牛顿－辛普森方法确定超薄Ａｌ膜光学函数,进而计算其介电函数,得到了它们随膜层厚变化的关系。结果表明,不同特征尺寸的薄膜,具有不同的电磁特性参数。     

轴向运动超薄梁的非局部动力学分析

基于非局部弹性理论,建立了两端受初始张力的轴向运动超薄梁横向振动的控制方程。与现有的一些仅仅在控制方程中考虑非局部效应的研究不同,该文同时将非局部效应引入到两种典型的边界条件中,考察了非局部参数对超薄梁横向振动行为尤其是固有频率和临界速度的影响。结果表明:超薄性使得轴向运动梁的自由振动固有频率及临界速度降低,经典弹性理论高估了纳米尺度结构的弯曲刚度,轴向运动超薄梁的动力学行为存在明显的非局部尺寸效应。     

新型纳米ZrO2/聚酰亚胺复合超薄膜的制备表征及其介电性能

以油酸为有机配体,采用两相方法合成了油溶性的超小尺寸纳米晶体纳米ZrO₂（nano ZrO₂）,并对nano ZrO₂表面包覆的油酸改性使纳米晶体与聚酰胺酸（PAA）接枝,通过旋膜法热亚胺化后形成nano ZrO₂/聚酰亚胺（PI）复合超薄膜。利用TEM、XRD、FTIR和SEM等对nano ZrO₂及nano ZrO₂/PI复合超薄膜进行表征,并对nano ZrO₂/PI复合超薄膜的介电性能进行了探究。结果显示,nano ZrO₂尺寸均一（5.0 nm左右）,为锐钛矿晶型,其晶体结构和尺寸不受改性接枝影响。nano ZrO₂在复合超薄膜中分散良好。电学研究表明,复合超薄膜的介电性能受nano ZrO₂与PAA质量比及制膜热亚胺化温度的影响。当PAA∶ZrO₂质量比为2∶3、热亚胺化温度为320℃时,介电常数达到最大,几乎是纯PI薄膜的2倍。两相法-改性接枝-热亚胺化制备PI复合超薄膜的方法简单高效,能够避免无机粒子在PI基体内的团聚并提高介电性能,对于PI基复合薄膜的制备、应用及推广具有重要意义。     

超薄Au膜的微结构及电学特性

用直流磁控溅射在室温Si基片和载玻片上制备了厚度为7.6～81.3nm超薄Au膜,用X射线衍射及数字电桥对薄膜的微结构和电学性质进行了测试分析.微结构分析表明:制备的超薄Au膜仍为面心立方多晶结构;在膜厚d＜46.3nm时,(111)晶粒平均晶粒尺寸随膜厚增加逐渐增大,当d＞46.3nm后,晶粒尺寸几乎保持不变,甚至有所减小;(220)晶粒的平均晶粒尺寸则总是随膜厚的增加而增大.薄膜晶格常数均比PDF标准值(0.4078nm)稍小,随膜厚增加,薄膜晶格常数由0.4045nm增大到0.4077nm.电阻率分析结果表明,随着膜厚的增加,薄膜的电阻率经历了岛状膜的极大-网状膜的急剧减小-连续膜的缓慢减小.膜厚d＞46.3nm后,由于薄膜中长出新的(111)小晶粒,电阻率略有增加.     

离子束溅射沉积Co膜光学特性的尺寸效应研究

本文采用离子束溅射沉积了不同厚度的Co膜,利用Lambda-900分光光度计,对不同厚度的Co膜从波长为310nm到1300nm范围测量了薄膜的反射率和透射率.选定波长为310、350、400、430、550、632、800、1200nm时对薄膜的反射率、透射率和吸收率随薄膜厚度变化的关系进行讨论.实验结果显示,Co膜的光学特性都有明显的尺寸效应.对在可见光范围内同一波长时的反射率和透射率随薄膜厚度变化关系的实验结果作于同一图上,发现反射率曲线与透射率曲线都有一个处在网状膜阶段的交点,这个交点对应的厚度作为特征厚度,该厚度可认为是金属薄膜生长从不连续膜进入连续膜的特征判据.     

Preparation and quality assessment of CuS thin films encapsulated in glass

Copper sulfide (CuS)-based thin films with different thickness have been prepared by thermal co-evaporation of the elemental constituents. Morphological and microstructural properties were shown to vary with film thickness. Optical properties of films encapsulated in a double-glazed configuration and containing an air gap have been measured. Encapsulated CuS films of thickness 100 and 150 nm showed high transmittance peak values of 48% and 36%, respectively, and a low reflectance below 20% and 15%, respectively, in the visible region. A low transmittance of ~ 10% (~ 15%) and a high reflectance of ~ 45% (~ 40%) in the near-infrared region were obtained for the film with 150 nm (100 nm). Thermal stability of the films has been proved by annealing of the films in air and Argon at 150 °C.     

Carrier Density and Plasma Frequency of Aluminum Nanofilms

In this work, the prerequisite and mode of electromagnetic response of Al nanofilms to electromagnetic wave field was suggested.Reflectance, transmittance in infrared region and carrier density of the films was measured. With the carrier density of the films, the dependence of their plasma frequencies on the film thickness was obtained. On the other hand, the dependence of absorptance on the frequency of electromagnetic wave field was set up by using the measured reflectance and transmittance,which provided plasma frequency-film thickness relation as well. Similarity of both plasma frequency-film thickness relations proved plasma resonance as a mode of electromagnetic response in Al nanofilms.     

Carrier Density and Plasma Frequency of Alummum Nanofilms

In this work, the prerequisite and mode of electromagnetic response of Al nanofilms to electromagnetic wave field was suggested. Reflectance, transmittance in infrared region and carrier density of the films was measured. With the carrier density of the films, the dependence of their plasma frequencies on the film thickness was obtained. On the other hand, the dependence of absorptance on the frequency of electromagnetic wave field was set up by using the measured reflectance and transmittance, which provided plasma frequency-film thickness relation as well. Similarity of both plasma frequency-film thickness relations proved plasma resonance as a mode of electromagnetic response in Al nanofilms.     

Optical properties of SnO2:F films deposited by atmospheric pressure CVD

Atmospheric pressure chemical vapor deposition (APCVD) system, designed for the deposition of F-doped SnO₂ thin films, is compatible with industrial requirements such as high process speed, scaling to wide substrate widths and low costs. Precise method for measuring the optical absorptance in the spectral range 300–1700 nm combines transmittance, reflectance and photothermal deflection (PDS) spectra measured on the same spot of the sample immersed in the transparent liquid with a relatively high index of refraction. The effects of the film thickness, doping gas addition and the susceptor temperature on the optical absorptance and electrical resistivity of the TCO films are assessed. We show that the doping gas concentration and the susceptor temperature influence both the incorporation ratio of dopants into SnO₂ film as well as the defect concentration. The SnO₂ films growth at optimum APCVD conditions have thickness 0.7 µm, average surface roughness about 40 nm, sheet electrical resistance 10 Ω/sq and the optical absorption 1% at 500 nm and about 5% at 1000 nm.     

Structural,electrical, optical properties and reliability of ultra-thin tin doped indium oxide films for touch panels

Ultra-thin ITO films with thickness of 4–56 nm were deposited on glass by dc magnetron sputtering using 5 wt% SnO₂ doped ITO target. The effect of film thickness on the structural, electrical, optical properties and reliability was investigated for its application to touch panels. The 4 nm thick ITO film shows amorphous structure and other films present polycrystalline structure and the (222) preferred orientation. The ultra-thin ITO films show smooth surface with low Ra surface roughness smaller than 1 nm. The sheet resistance and visible transmittance of the ITO films decrease with the increase in film thickness. The 4 nm thick ITO film shows the highest resistivity (3.08 × 10^?3 Ω cm) with low carrier density and Hall mobility, and other films have excellent conductivity (<4.0 × 10^?4 Ω cm). The ITO films show high transmittance (>85 %) in visible light range and do not generate interference ripples between film and substrate interface. The ITO films with thickness of 18–56 nm show stable reliability under high temperature, high temperature & high humidity and alkaline environmental conditions. The only electrical degradation corresponds to the increase of sheet resistance in the ITO films with thickness of 4–12 nm.     

电子束低温蒸发ITO膜增透、增反特性研究

本实验是在低温条件下，采用电子柬蒸发制备ITO透明导电薄膜，通过监测电阻来控制薄膜的厚度，通过控制薄膜厚度研究了增透和增反两种效果的ITO膜的制备及膜的光学特性。当膜厚达170nm和83nm时透过率和反射率可达95％和6％。     

Low-temperature fabrication of porous and transparent ZnO films with hybrid structure by self-hydrolysis method

Porous, transparent and controllable ZnO nanoparticulate films were fabricated by self-hydrolysis of zinc salts in its crystalline water without any additions at 65 °C by an evaporating acetone solvent. The crystallite size of ZnO nanoparticles was about 30 nm, and the thickness of the nanoparticle film was controllable by simply changing the coating times. ZnO nanoparticulate films in thickness of 500 nm showed a high transmittance (>90%) in the visible range and widen bandgap (3.35 eV). The c-axis oriented ZnO nanoarray film was fabricated by a subsequent heterogeneous nucleation and growth in an aqueous solution. As-grown ZnO hybrid films showed a good transmittance (>85%) in the visible range.     

热处理工艺对多孔TiO2薄膜光催化性能的影响

以十八胺为模板剂,采用溶胶-凝胶法在玻璃基体上制备了多孔TiO2薄膜,研究了热处理工艺对薄膜理化性质及光催化性能的影响。随煅烧温度和煅烧时间的增加,TiO2薄膜表面逐渐形成清晰的孔结构,晶粒尺寸增大。薄膜由锐钛矿型TiO2组成,Ti以Ti 4+的形式存在。制备的TiO2薄膜厚度在200nm左右,薄膜的UV-Vis透射率随煅烧温度的升高呈下降趋势,随煅烧时间的延长先下降而后又上升。多孔TiO2薄膜光催化降解甲基橙结果表明,随煅烧温度升高薄膜的光催化活性增加,在500℃煅烧2h制备的薄膜具有最佳的光催化活性。