Molecular beam epitaxy of Pb1 ? xEuxTe and Pb1 ? xSnxTe layers and related periodic structures

Layers and periodic Bragg structures based on Pb_{1 − x} Eu _x Te (0 < x < 1) and Pb_{1 − x} Sn _x Te (0 < x < 0.1) ternary solid solutions have been grown on (111) BaF₂ and (111) Si substrates by molecular beam epitaxy. X-ray diffraction measurements show that the layers in three-period EuTe/Pb_0.94Eu_0.06Te structures maintain the [111] crystallographic orientation normal to the substrate plane. In the interface plane, the [110] directions of the layers and substrate are parallel to each other. The full width at half maximum of the rocking curve of each layer of both the binary and ternary compounds is about 20′. The large optical contrast (40%) in such structures allowed us to reach 99.9% mid-IR reflectivity.     

Thermodynamic evaluation and potentiometric study of Cd1?xMnxTe and Cd1?xZnxTe dissolution in acid and alkaline solutions

We have performed thermodynamic calculations and have constructed Pourbaix diagrams representing redox processes in the MnTe-H₂O, ZnTe-H₂O, Cd_1−x Mn _x Te-H₂O, and Cd_1−x Zn _x Te-H₂O systems. Analysis of the Pourbaix diagrams and potentiometric data attests to different etching behaviors of Cd_1−x Mn _x Te and Cd_1−x Zn _x Te solid solutions in alkaline and acid solutions. Original Russian Text ? S.G. Dremlyuzhenko, A.G. Voloshchuk, Z.I. Zakharuk, I.N. Yurijchuk, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 1, pp. 26–34.     

Electrical properties and microstructure of CdxHg1 ? x ? yCrySe crystals

Crystals of the Cd _x Hg_{1 − x − y} Cr _y Se (x = 0.4, y = 0.1) quaternary solid solution have been grown by the Bridgman method, and their microstructure and electrical properties have been studied. The crystals are shown to contain various types of inclusions in the form of filaments and triangles.     

Determining the normal and lateral dark current components in n-p photodiodes based on p-CdxHg1 ? xTe heteroepitaxial structures with x = 0.22

The effect of an external magnetic field on the dark current of photodiodes in far-IR matrix photodetector arrays fabricated by boron ion implantation into heteroepitaxial cadmium mercury telluride (CMT) layers has been studied. A new method is proposed for separately determining the lateral and normal dark current components in CMT photodiodes of the matrix photodetectors. It is established that the dark current of these photodiodes (at 77 K) with dimensions comparable with the minority carrier diffusion length is determined primarily by the lateral component.     

Thermal conductivity of Ca1 ? xHoxF2 + x optical ceramics

The thermal conductivity of Ca_{1 − x} Ho _x F_{2 + x} (x ≤ 0.03) optical ceramics has been studied experimentally in the temperature range 50–300 K. With increasing holmium content, the thermal conductivity of the ceramics decreases, especially at low temperatures: from 10.2 to 2.3 W/(m K) at 300 K and from 250 to 4.5 W/(m K) at 50 K.     

Magnetic Phase Diagram of Ca1?xMnxO

Alternating current susceptibility and direct current magnetization have been studied for polycrystalline Ca_1–x Mn _x O. On increasing the Mn content, magnetic ordering changes from spin glass behavior for 0.25 x 0.4 to antiferromagnetic order. The paramagnetic/antiferromagnetic transition is of second order for 0.5 x 0.65 and of first order for x 0.7. For low Mn concentrations, the high-temperature alternating current susceptibility can be described by a diluted Heisenberg magnet model developed for diluted magnetic semiconductors.     

Magnetic and transport properties of Mn3+xGa1?xN compounds

Mn_3+x Ga_1−x N compounds with x = 0.0 and 0.1 were prepared by re-sintering Mn₂N_0.86, Ga bulk and Mn powders. These compounds are deduced to be the N-deficiency ones. In Mn₃GaN, a step-like magnetic transition, from frustrated antiferromagnetism to paramagnetism with increasing temperature, occurs at 370 K, while the same magnetic transition of Mn_3.1Ga_0.9N is far above 380 K. The enhanced magnetization of Mn₃GaN at low temperatures is ascribed to the fast lowering of antiferromagnetism. The electrical resistivity of Mn₃GaN exhibits a typically metallic conducting behavior with a positive magnetoresistance of 4–7%.     

Electrical and magnetic properties of the diluted magnetic semiconductors Cd1 ? xMnxGeP2 and Cd1 ? xMnxGeAs2 at high pressures

The structural and magnetic phase transitions and magnetoresistance of the diluted magnetic semiconductors Cd_{1 − x} Mn _x GeAs₂ and Cd_{1 − x} Mn _x GeP₂ have been studied at high hydrostatic pressures, up to 7 GPa. The normal and anomalous Hall coefficients of the samples have been determined graphically from experimental data.     

Electrical conductivity of LaCoxFe1 ? xO3 ? δ and LaLi0.1CoxFe0.9 ? xO3 ? δ (0 ≤ x ≤ 0.4) oxides

We have studied the effect of Co and Li concentrations on the phase composition and electrical conductivity of LaCo _x Fe_{1 − x} O_{3 − δ} and LaLi_0.1Co _x Fe_{0.9 − x} O_{3 − δ} perovskite-like oxides synthesized in air at 1470 K. Single-phase materials with an orthorhombic crystal structure were obtained in the range 0 ≤ x ≤ 0.3. The composition dependences of conductivity have a minimum at x _c = 0.1 and 0.2, respectively. In the range x > 0.1, the conductivity of LaCo _x Fe_{1 − x} O_{3 − δ} increases with increasing Co concentration for T > 700 K and decreases for T < 600 K. The conductivity of La(Li_0.1Co _x Fe_{0.9 − x} )O_{3 − δ} in the range 0 ≤ x ≤ 0.1 and for x ≥ 0.2 increases with Co concentration throughout the temperature range studied.     

Electrical properties of p -Si1 ? x Ge x Au-Based p - i - n structures and Schottky barriers

We have studied the properties of Si_{1 − x} Ge _x -based p-i-n structures and Schottky barriers in which the i-region had been produced via compensation with gold. The results demonstrate that the use of a guard ring in p-Si_{1 − x} Ge _x 〈Au〉 structures reduces the room-temperature reverse leakage current by two to three orders of magnitude. Such structures have sufficiently small reverse currents and a barrier on the order of 0.75 eV. p-Si_{1 − x} Ge _x 〈Au〉-based guard-ring structures are suitable for the fabrication of IR and nuclear detectors. Original Russian Text ? I.G. Atabaev, N.A. Matchanov, E.N. Bakhranov, M.U. Khazhiev, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 7, pp. 775–780.     

Relation of Structure and Superconductivity in Self-compensated Y1?xCaxBa2Cu3?xAlxOz System

The co-doped compounds of Y_1−x Ca _x Ba₂Cu_3−x Al _x O _z , with x from 0.1 to 0.4, were synthesized through a solid-state reaction method. Structural and superconducting properties have been investigated by X-ray diffraction, Rietveld refinement, and DC magnetization measurement. The lattice constant a decreases while b increases with the addition of x. The difference between a and b diminishes gradually. Careful study of the crystalline structure shows that the critical temperature (T _c ) changes monotonically with some local structural parameters, such as the difference between Ba and Cu(2) atoms’ Z coordinates, the bond length of Cu(2)–O(4), and the bond angle of Cu(2)–O(2)–Cu(2), which are all closely related to the interaction between the perovskite block and the rock salt block in the unit cell. The results indicated that the influence of the crystalline structure on superconductivity is important and independent of the carrier concentration.     

Ferromagnetic Resonance in Ga1?xMnxAs

We report on ferromagnetic resonance measurements of Ga_1–x Mn _x As thin films with Mn contents 0.022 x 0.051. For x 0.036 and the external magnetic field normal to the thin film, we observe several resonances, which we identify as spin wave resonances. The non-quadratic mode spacing can be consistently explained by a linear gradient in the magnetic properties of the films. From the measurements, the exchange constant A can be deduced for different Mn contents x.     

Superconducting Properties of Carbon and Zn Double-doped Mg1?xZnx(B1?xCx)2

A series of polycrystalline samples of Mg_1−x Zn _x (B_1−x C _x )₂ (x=0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) were synthesized by a conventional solid-state reaction method under a background pressure about 10⁻³ Pa. Phase identification, crystal structure and superconducting transition temperature (T _c) were studied by means of X-ray diffraction (XRD) and resistivity measurements. The results indicated that the lattice parameters a and c show no clear trend in their changes with increasing doping level, and it turned out that the dopants had a marked effect on the crystal-lattice parameters and changed the crystal structure of the samples. The T _c for Mg_1−x Zn _x (B_1−x C _x )₂ decreased with C and Zn doping, but the rate of decrease was slower than single C-doped. We propose that the suppression of T _c by doping originates largely from the structural change.     

Self-propagating combustion synthesis of Pb1?xSrxZrO3 (0 ≤ x ≤ 0·20) ceramics and their dielectric properties

Lead strontium zirconate, Pb_1−x Sr _x ZrO₃ (0 ≤ x ≤ 0·20) ceramics, were prepared by novel glycinenitrate self-propagating combustion technique. The crystal structure of the ceramics was investigated as a function of composition via X-ray diffraction (XRD). The XRD patterns obtained on these powders showed the formation of pure orthorhombic phase of lead strontium zirconate without impurities and all the compounds retained the orthorhombic structure. The samples were sintered at 900–1100°C for 2 h. It has been observed that the dielectric constant decreases with increase in strontium content (100 kHz). In all compositions, dielectric constant showed a peak at transition temperature and the magnitude of the peak was found to decrease with strontium doping level.     

Crystal structure and magnetic properties of high-coercivity Sr1 ? xPrxFe12 ? xZnxO19 solid solutions

Sr_1−x Pr _x Fe_{12 − x} Zn _x O₁₉ ferrites with x = 0, 0.1, 0.2, 0.3, 0.4, and 0.5 have been prepared by solid-state reactions between praseodymium, iron, and zinc oxides and strontium carbonate in air at 1470 K. According to X-ray diffraction results, the samples with x ≤ 0.2 were single-phase and those with 0.3 ≤ x ≤ 0.5 contained, in addition to the magnetoplumbite phase, small amounts of α-Fe₂O₃, ZnFe₂O₄, and PrFeO₃. The mixed-phase samples further fired twice at 1470 K for 4 and 2 h contained no impurity phases at x = 0.3 and contained only α-Fe₂O₃ at x = 0.4 and 0.5. In the composition range 0 ≤ x ≤ 0.3, the a and c cell parameters, unit-cell volume V, and X-ray density ρ_x of the magnetoplumbite phase vary linearly according to the relations a(?) = 5.8869 − 0.0162x, c(?) = 23.027 + 0.449 x, V(?³)= 691.10 + 9.65x, and ρ_x(g/cm³) = 5.102 + 0.230 x. The highest degree of combined heterovalent substitution of Pr³⁺ for Sr²⁺ and Zn²⁺ for Fe³⁺ in the SrFe₁₂O₁₉ ferrite (formation of Sr_1−x Pr _x Fe_{12 − x} Zn _x O₁₉ solid solutions) at 1470 K is x = 0.32−0.36. The saturation magnetization per formula unit (n _s) of the x = 0.1 ferrite exceeds that of SrFe₁₂O₁₉ by 1.7% at 6 K and by 15.2% at 308 K. The 308-K n _s and coercive force (_σ H _c) of the x = 0.2 ferrite exceed those of SrFe₁₂O₁₉ by 7.6 and 8.5%, respectively.     

Electrical properties of Zn2(TiaSnb)1 ? xZrxO4 solid solutions

The electrical conductivity, band gap, dielectric permittivity, and molar polarizability of Zn₂(Ti _a Sn _b )_{1 − x} Zr _x O₄ solid solutions have been determined. All of the synthesized samples are dielectrics with semiconducting behavior of conductivity. The phase diagram of the Zn₂TiO₄-Zn₂SnO₄-Zn₂ZrO₄ system is presented.     

X-ray diffraction study of multicomponent oxides in the Zn2 ? x(TiaZrb)1 ? xFe2xO4 system

The multicomponent refractory oxide system Zn_{2 − x} (Ti _a Zr _b )_{1 − x} Fe_2x O₄ (a + b = 1; a: b = 1: 5, 1: 4, 1: 3, 1: 2, 1: 1, 2: 1, 3: 1, 4: 1; x = 0–1.0; Δx = 0.05) has been studied by X-ray diffraction, using samples prepared by melting appropriate metal oxide mixtures in a low-temperature hydrogen-oxygen plasma. Two phases, both with wide homogeneity ranges, have been identified: α-phase, with a cubic inverse spinel structure, and β-phase, with a tetragonal inverse spinel structure. The phase boundaries in the system have been determined. Structural data are presented for about 100 solid solutions.     

Effect of Y Doping on Superconductivity and Spin-Density-Wave States in Sm1?xYxFeAsO0.8F0.2 and Sm1?xYxFeAsO

Y doping effects on crystal structure, resistivity, superconductivity, and spin-density-wave states in the parent and F-doped SmFeAsO compounds have been studied. Y doping leads to shrinkage of the lattice parameters in both systems. The superconductivity of Sm_1−x Y _x FeAsO_0.8F_0.2 is suppressed by Y doping with onset T _c decreasing monotonically from 52.6 K at x=0 to 25 K at x=0.5. A weak resistivity anomalies around 120 K ascribed to the spin-density-wave instability is observed in the sample of x=0.5. In parent SmFeAsO compound, the resistivity anomaly temperature was detected to be around 150 K and shifted towards lower temperatures with the Y doping level increased. It is concluded that a negative pressure effect takes responsibilities for the decrease of T _c in Sm_1−x Y _x FeAsO_0.8F_0.2.     

Stabilization of the anatase phase of Ti1?xSnxO2 (x < 0.5) nanofibers

We experimentally investigate the stabilization of the anatase phase of Ti_1−x Sn _x O₂ (x < 0.5) nanofibers when synthesized by an electrospinning method. The as-spun nanofibers became nano-grained, polycrystalline nanofibers after calcination and the diameters of the nanofibers depend on Sn content. Stabilization of the anatase phase in Ti-rich compositions and incorporation of Sn ions were confirmed by X-ray diffraction, Raman, X-ray absorption near-edge structure, and photoluminescence (PL) spectroscopies. Results from the PL study also demonstrated the tunable nature of the optical properties, with the emission maximum shifting towards higher wavelength with increasing Sn concentration.      

Luminescence properties of double-perovskite Sr2Ca1?2xEuxNaxMoO6 red-emitting phosphors prepared by the citric acid-assisted sol–gel method

Double-perovskite Sr₂Ca_1−2x Eu _x Na _x MoO₆ red-emitting phosphors were prepared by the citric acid-assisted sol–gel method, and their luminescence properties were investigated as a function of sintering temperature and Eu³⁺-doping concentration. B-site substituted Sr₂Ca_0.8Eu_0.1Na_0.1MoO₆ phosphor, in which Na⁺ ions act as charge compensators, was selected to study the thermal behavior, phase structure, microstructure, and photoluminescence property under different sintering temperatures. The photoluminescence studies on Sr₂Ca_1−2x Eu _x Na _x MoO₆ (x = 0.02, 0.05, 0.10, 0.15, 0.2) show that a dominant red emission line at around 594 nm, which is due to the Eu³⁺ magnetic dipole transition of ⁵D₀–⁷F₁, is observed under different Eu³⁺ excitations (396 and 412 nm). Further, Eu³⁺ dopant content dependent emission spectra investigations of Sr₂Ca_1−2x Eu _x Na _x MoO₆ phosphors indicates that, when the Eu³⁺ concentrations x = 0.05, there are minimum differences between the emission intensity of ⁵D₀–⁷F₁ transition at 594 nm and that of ⁵D₀–⁷F₂ transition at 615 nm. With increasing Eu³⁺ concentration, the variation of the emission intensities between the two transitions keep nearly invariable and Sr₂Ca_0.8Eu_0.1Na_0.1MoO₆ phosphor has the strongest red emission in this series.