纳米硅薄膜及其太阳电池研究进展

纳米硅薄膜具有新颖的结构特征和一系列独特的物理性质,可望应用于新型光电子器件、量子功能器件、集成电路等领域.本文综述了纳米硅薄膜的研究现状及其优良的光电性能和纳米硅薄膜太阳电池的研究进展,指出在生产制备与性能方面纳米硅薄膜太阳电池所具有的优势,具有良好的发展前景.     

一维硅锗纳米复合材料的制备及在场效应晶体管中的应用

一维硅锗纳米复合材料，主要包括硅锗纳米线异质结与纳米管，具有优异的电学、光学等性能，易与现代以硅为基础的微电子工业相兼容，所以在纳米器件等领域得到了广泛重视。总结了一维硅锗纳米复合材料的研究现状和相关的制备方法，重点评述了在纳米场效应晶体管中的应用，并对其研究前景做了展望。     

掺磷纳米硅薄膜的制备及介观力学性质与介观接触电阻的研究

采用PECVD法制备的纳米硅薄膜是一种具有特殊性能的人工材料.它是由大量具有纳米量级的硅微品粒构成,纳米硅晶粒镶嵌在由非晶硅构成网络中,其晶粒所占的体积百分比为Xc≈50%,从而决定了其特有的性质.本文通过严格控制薄膜生长的工艺参数,得到了掺磷纳米硅薄膜,并通过原位纳米力学电学测试系统对其力学和电学性质进行测试,发现掺磷纳米硅薄膜的纳米硬度为5 GPa,而其杨氏模量随着压入深度的增加而增大,其接触电阻与薄膜的结构密切相关.这些属性对于纳米硅薄膜微器件的制备具有重要的参考意义.     

纳米硅薄膜研究进展

纳米硅薄膜具有独特的结构和许多优异的光电性能，可望应用于新型光电器件，大规模集成电路等领域。本文从制备技术，沉积机理，结构和性能各方面对纳米硅薄膜的研究进展情况作了回顾和综述，并对其发展前景作了展望。     

纳米硅薄膜研究进展

纳米硅薄膜具有独特的结构和许多优异的光电性能,可望应用于新型光电器件、大规模集成电路等领域。本文从制备技术、沉积机理、结构和性能各方面对纳米硅薄膜的研究进展情况作了回顾和综述,并对其发展前景作了展望     

纳米硅薄膜及磁控溅射法沉积

纳米硅薄膜具有卓越的光学和电学特性,其在光电器件方面潜在的应用越来越引起人们的兴趣.讨论了用磁控溅射法制备纳米硅薄膜的微观机理及沉积参数对薄膜结构和性能的影响.其中,氢气分压、基片温度、溅射功率是磁控溅射法沉积纳米硅的关键参数,适当的温度、较高的氢气分压和较低的溅射功率有利于纳米硅的生成.     

硅纳米管的制备及应用前景

自组生长的硅纳米管是在一定条件下由一个个原子自己搭建生成、内部排列有序的一种新型的一维纳米材料,它完全可以体现硅纳米管的真实特性,同时具备碳纳米材料和硅纳米线材料的性能,在传感器、晶体管、光电器等纳米器件及场发射显示屏等方面具有广泛的应用前景。作者采用全新的水热溶液生长法合成硅纳米管。这种硅纳米管是国际上第一次合成自组生成的硅纳米管,为将来制造纳米电子器件提供了继碳纳米管、硅纳米线后的又一种全新的纳米材料。     

金属热还原法制备锂离子电池纳米硅材料的研究进展

锂离子电池作为一种绿色环保的储能器件,在许多领域得到了广泛应用,如手机、笔记本、摄像机、医疗器械等便携式电子器件以及新能源电动汽车等.特别地,随着社会的进步、人类的发展,能源枯竭、石油危机、汽车尾气排放等问题日趋严峻,新能源动力汽车异军突起,而锂离子电池作为动力电池的最优选择,其能量密度的提升对推动新能源动力汽车领域的发展具有重大意义.锂离子电池电极材料是限制其能量密度的关键因素.目前,锂离子电池所采用的负极材料为石墨,其理论比容量仅为372 mAh/g.在众多新型负极材料中,硅材料因具有4200 mAh/g的超高理论比容量而备受研究者瞩目,但是硅材料自身存在导电率低、体积膨胀大、结构不稳定等问题,导致其电化学性能不佳.研究者们主要通过将硅材料纳米化来提高其结构稳定性及循环稳定性.当前,纳米硅材料的制备方法主要有化学气相沉积法、等离子蒸发冷凝法及机械球磨法,但是普遍存在对设备要求条件苛刻、制备成本高、流程复杂等问题.实现纳米硅的短流程、低成本制备,对于推动硅基负极,特别是硅碳复合负极的商业化应用具有重要意义.本文重点综述了基于金属热还原特别是镁热还原法制备的纳米硅在锂离子电池中的研究进展,分析了采用金属热还原制备纳米硅的技术优势,总结了近年来镁热还原制备的纳米硅基负极材料的性能,展望了金属热还原技术低成本制备纳米硅材料的发展前景.     

PCVD法制备硅系纳米复合薄膜材料

纳米复合薄膜材料由于具有传统复合材料和现代纳米材料两者的优点,成为重要的前沿研究领域之一.其中半导体纳米复合材料,尤其是硅系纳米复合薄膜,由于具有独特的光电性能,加之与集成电路相兼容的制备技术,有着广泛的应用前景.近年来关于纳米复合薄膜的研究不断深入,但仍有许多问题没有完全解决.本文围绕硅系纳米复合薄膜的材料特点,说明了等离子体化学气相沉积(PCVD)技术的工作原理和装置结构,以及该技术在硅系纳米复合薄膜制备中的独特优点.并以氮化硅薄膜为重点,介绍纳米复合薄膜材料的PCVD制备技术.文章最后对硅系纳米复合薄膜的在光电技术等各个领域的应用前景做了一些展望.     

镶嵌于基质中硅纳米晶的微观结构及其发光机制研究进展

硅纳米晶材料显示出许多集成器件所需的性能,已倍受人们的关注,成为国内外研究的热点。本文对利用不同方法制备的硅纳米晶的微观结构进行了综述,并对两种不同的发光机制进行了概述。人们在硅纳米晶的制备和表征方面取得了较大的进展,但对硅纳米晶的发光机制还未完全了解,有待进一步的研究。     

多晶硅薄膜材料与器件研究进展

多晶硅薄膜材料一直在半导体领域中扮演着重要角色。综述了多晶硅薄膜材料及其器件的特点、制备方法及研究进展。     

Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET

To maintain the development of MOSFET devices in the last three decades the lateral layout of this important device was scaled down into the sub-50 nm range. The challenge to maintain device performance was met by applying to scaling rules, which ensure a proper physical behaviour in the active area of the device. But nowadays new device architectures as Ultra Thin Body and Multi Gate devices have to be discussed. Furthermore new materials were introduced as high-κ gate dielectrics and metal gates. In recent years strained silicon has drawn increasing attention to enlarge carrier mobility in the MOSFET channel. In the d-DotFET approach locally strained silicon is formed by means of template-assisted self assembly of Ge-dots and silicon overgrowth. The silicon capping layer is strained on top of the dot and in its near vicinity, only. The accurate positioning of the dots on pre-patterned substrates enables the utilization of these substrates for further device processing. The crucial issue is to integrate the active area on top of the dot, which requires an overlay of ± 10 nm, which has to be assured over the whole process. In this paper we investigate the intrinsic overlay of a Vistec EBPG 5000^plus e-beam system using etched holes in silicon as markers. It was found, that the required overlay accuracy can be obtained, when the definition of the marker sites is adapted to the following process, already. The overlay is not affected by device processing, as long as the markers are affected symmetrically.     

硅半导体太阳能电池进展

太阳能电池是将太阳能直接转化为电能的装置,也是有效利用太阳能最佳途径之一。作为一种绿色能源,尤其是在核电安全问题面临挑战的今天,太阳能电池被认为是解决能源衰竭和环境污染等一系列重大问题的最佳选择。目前,许多国家正在制订中长期太阳能开发计划,准备在21世纪大规模开发太阳能。当前研究最多同时在生产应用的最广泛的当数硅太阳能电池(如单晶硅、多晶硅、非晶硅等)。通过对各类硅太阳能电池的性能、工艺、转化效率以及制备方法等方面作比较并讨论了它们各自性能的优劣,最后结合当前国内外工业化生产状况,对硅太阳能电池研究现状和各自的最新进展作了比较详细的综述,并简要讨论了硅太阳能电池研究和生产上的前景及趋势。     

Porous silicon and aluminum co-gettering experiment in p-type multicrystalline silicon substrate

The lifetimes of non-equilibrium minority carriers, which bound with the diffusion length, are considered as two important parameters of the low-quality multicrystalline silicon (mc-Si) substrate. Its value defines the quality of the initial substrate. It is also subjected to change as a result of many high-temperature operations during the device fabrication. Therefore, it is necessary to incorporate certain processing steps that either improve or preserve the electronic quality of the mc-Si substrate. In this study, a novel porous silicon and aluminum co-gettering experiment has been applied as a beneficial approach to improve the electronic quality of the low-resistivity mc-Si substrates. Porous silicon layers were prepared by anodization of the n⁺ silicon region by a simple electrochemical etching process using an aqueous HF-based electrolyte, which leads to the creation of porous silicon microcavities. Besides making porous silicon and aluminum co-gettered samples, both phosphorous and aluminum alloy-gettered samples and reference samples were made. The gettering-induced lifetime enhancement in the test samples was monitored by measuring the lifetime/diffusion length of the test samples using two independent methods such as photoconductivity decay (PCD) measurement and the photocurrent generation method (PCM), respectively. The result in both the measurements has shown a reasonably good agreement with each other. Therefore, it is inferred that the applied co-gettering experiment has a synergetic effect to improve the lifetime of the mc-Si substrate.     

Porous silicon and aluminum co-gettering experiment in p-type multicrystalline silicon substrate

The lifetimes of non-equilibrium minority carriers, which bound with the diffusion length, are considered as two important parameters of the low-quality multicrystalline silicon (mc-Si) substrate. Its value defines the quality of the initial substrate. It is also subjected to change as a result of many high-temperature operations during the device fabrication. Therefore, it is necessary to incorporate certain processing steps that either improve or preserve the electronic quality of the mc-Si substrate. In this study, a novel porous silicon and aluminum co-gettering experiment has been applied as a beneficial approach to improve the electronic quality of the low-resistivity mc-Si substrates. Porous silicon layers were prepared by anodization of the n⁺ silicon region by a simple electrochemical etching process using an aqueous HF-based electrolyte, which leads to the creation of porous silicon microcavities. Besides making porous silicon and aluminum co-gettered samples, both phosphorous and aluminum alloy-gettered samples and reference samples were made. The gettering-induced lifetime enhancement in the test samples was monitored by measuring the lifetime/diffusion length of the test samples using two independent methods such as photoconductivity decay (PCD) measurement and the photocurrent generation method (PCM), respectively. The result in both the measurements has shown a reasonably good agreement with each other. Therefore, it is inferred that the applied co-gettering experiment has a synergetic effect to improve the lifetime of the mc-Si substrate.     

Defect engineering of Czochralski single-crystal silicon

Modern microelectronic device manufacture requires single-crystal silicon substrates of unprecedented uniformity and purity. As the device feature lengths shrink into the realm of the nanoscale, it is becoming unlikely that the traditional technique of empirical process design and optimization in both crystal growth and wafer processing will suffice for meeting the dynamically evolving specifications. These circumstances are creating more demand for a detailed understanding of the physical mechanisms that dictate the evolution of crystalline silicon microstructure and associated electronic properties. This article describes modeling efforts based on the dynamics of native point defects in silicon during crystal growth, which are aimed at developing comprehensive and robust tools for predicting microdefect distribution as a function of operating conditions. These tools are not developed independently of experimental characterization but rather are designed to take advantage of the very detailed information database available for silicon generated by decades of industrial attention. The bulk of the article is focused on two specific microdefect structures observed in Czochralski crystalline silicon, the oxidation-induced stacking fault ring (OSF-ring) and octahedral voids; the latter is a current limitation on the quality of commercial CZ silicon crystals and the subject of intense research.     

新颖的硅基光电材料

光电集成是未来信息技术发展的重要方向之一,硅基光电集成具有巨大的应用前景,在硅基材料及集成方面源头创新空间很大。论述了新颖的硅基材料研究现状及应用前景。     

硅材料及其电化学研究进展

硅材料是现代信息科技的主要载体,而其电化学研究则是正确认识和应用硅材料的前提和基础.从硅的表面和界面特性出发,综述了硅的电化学方面的研究进展,阐述了硅电极的阳极和阴极反应行为,总结了硅的刻蚀以及多孔硅的电化学形成机制和影响因素,并进一步展望了硅材料电化学研究的未来发展方向.     

The New Method of Semiconductor Devices Production by Wafers Direct Bonding

Problems of a new technological process of multilayer silicon structure formation by direct bonding of silicon wafers (SDB) are reviewed. The main accent is made on the consideration of possible mechanisms of semiadhesive bonding of silicon surfaces at low-temperature and high-temperature steps of the bonding process. Issues regarding the quality of multilayer structures such as absence of voids, crystal structure peculiarities of the bonding interface, and electrical properties of the device layers are presented. Examples of applications of the SDB multilayer structures in device fabrication are shown. The review includes both the consideration of principal reports on the subject and the author's experimental results.     

硅基单结太阳能电池的制备技术、缺陷及其性能的研究

首先综述了硅基单结太阳能电池的分类、制备方法及进展,介绍了化学气相沉积法、液相外延法(LPPE)、金属诱导结晶法(MIC)、磁控溅射法以及分子束外延法等各种硅基太阳能电池的制备方法,阐述了各种制备工艺的优缺点。其次,总结了单晶硅、多晶硅以及非晶硅太阳能电池在组织结构、缺陷方面的研究现状。最后,对硅基太阳能电池的机械、电学、光学以及光电性能等方面的研究进展做了论述。