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1.
介电材料表面金属化技术的发展概况   总被引:3,自引:0,他引:3  
介绍了介电材料表面金属化技术的发展概况。简述了原有化学镀工艺的缺点,着重介绍了近十余年来塑料电镀、PC板孔金属化、直接镀工艺三方面的发展:表面化学改性膜、碳胶膜、导电聚合物膜工艺。介绍了几种商品工艺。  相似文献   

2.
化学镀铜溶液稳定性和沉铜速率的研究   总被引:8,自引:3,他引:5  
采用单因素试验法研究了影响化学镀铜镀速和溶液稳定性的各因素,根据实验确定了适宜的化学镀铜液配方及工艺规范。优选出的镀液稳定性高,沉铜速率达2.5-3.0μm/20min。镀层延展性好,平整、外观良好,可用于印制线路板的孔金属化及其他塑料电镀。  相似文献   

3.
印刷线线路板(PCB)孔壁化学镀铜金属化前的碱性除油处理,有利于调整其电荷和后期的催化化学镀铜反应。采用背光级数、SEM及EDS等方法研究了碱性除油液中OP-10乳化剂浓度对PCB孔壁化学镀铜性能的影响。结果表明,OP-10浓度对PCB的碱性除油有显著影响:不加OP-10,PCB孔壁化学铜镀后基材裸露较多,漏光现象严重,背光级数仅为6级;随OP-10浓度的增大,PCB孔壁镀铜层的背光级数及镀速均先增大后减小,当其为2.5mL/L时,镀铜层几乎全部覆盖基体,背光级数高达9.5级;OP-10的主要作用是吸附在油污与溶液界面处,降低界面张力,加强碱液对PCB孔壁的润湿,去除其上的油污,确保后续化学镀铜的成功。  相似文献   

4.
杨志刚  钟声 《功能材料》2004,35(Z1):1049-1053
随着集成电路的特征尺寸减小至深亚微米以下,互连延迟成为集成电路性能进一步提高的主要障碍.为解决互连延迟带来的危机,国际上已开发出以铜为互连材料,大马士革工艺为制造方法的铜互连工艺以取代亚微米时代的铝互连工艺.本文介绍了大马士革工艺中铜金属化以及阻挡层的研究现状.  相似文献   

5.
本文提出了以有机碱HD—1为络合剂的离子型钯活化液,并测定了有HD—1时,在不同的pH值下钯活化液中钯的平衡电位值。研究了此活化液各种参数对催化活性的影响。在此基础上,提出了离子型钯活化——水合肼还原工艺,测定了它们的某些性能,并与胶体钯活化工艺作了比较。此工艺适用于ABS塑料和PCB板通孔的金属化。  相似文献   

6.
许少飞  陈文华 《硅谷》2013,(2):85-85,76
针对手持终端电子消费类产品的PCB工艺设计,通过规范产品的PCB工艺设计,规定PCB的工艺设计的相关参数,使得PCB设计满足可生产性,可测试性的技术规范要求在产品设计过程中,构建产品工艺,技术,质量和成本优势。适用于手持终端电子消费类PCB为贴装基板的SMD元件的设计和制造。  相似文献   

7.
应用化学镀镍的方法实现了氮化铝的金属化。为得到较大的氮化铝金属化层粘附力,运用基于稳健估计的神经网络研究氮化铝金属化中化学镀镍的反应参数与金属层粘附力的关系。为使神经网络更加稳健,本文根据统计学原理,在前馈神经网络基础上,采取稳健估计方法改进神经网络。建立了定量预测粘附力性能的模型,并进行实验验证。确定金属化工艺中稳定的优化工作区域。结果表明,稳健估计方法既有传统神经网络的优点,又有较强的抵抗异常  相似文献   

8.
新型电子陶瓷材料氮化铝工艺进展与应用前景   总被引:10,自引:0,他引:10  
该简要回顾了新型电子陶瓷材料氮化铝的发展历程,探讨了其制造工艺与金属化工艺,分析了其在技术性能方面的优缺点,并研究了最新应用领域。  相似文献   

9.
先进无机材料表面的金属化——ZnO薄膜技术   总被引:1,自引:1,他引:0  
对ZnO薄膜技术进行了文献综述。以喷雾热解法制备的ZnO薄膜作为中间层,使化学镀金属化层在高光洁度(Ra≤0.01um)的无机非金属材料表面的结合力超过25N/mm2,ZnO薄膜上的光催化反应特性使其可能成为一种新的印刷电路加法工艺制造技术,介绍内容包括ZnO薄膜的制备,性质,金属化工艺以及界面分析结果。  相似文献   

10.
许少飞  陈文华 《硅谷》2013,(2):85+76
针对手持终端电子消费类产品的PCB工艺设计,通过规范产品的PCB工艺设计,规定PCB的工艺设计的相关参数,使得PCB设计满足可生产性,可测试性的技术规范要求在产品设计过程中,构建产品工艺,技术,质量和成本优势。适用于手持终端电子消费类PCB为贴装基板的SMD元件的设计和制造。  相似文献   

11.
Achievement of good surface quality remains a concern during the micro-drilling of printed circuit board (PCB). Although a great deal of work is reported on the micro-drilling of PCB, information on the effect of drilling parameters like feed rate on different characteristics of hole quality is relatively scarce. It is known that stresses during micro-drilling of PCBs are critical issues. However, their correlation with hole quality is yet to be reported. The current work utilizes finite element analysis (FEA)-based simulation of deformation and stresses to explain various parameters of hole quality such as diameter, delamination factor and burr thickness. Effect of feed rate on these parameters has also been established. Results indicated that stresses play a vital role in influencing the hole quality of PCB. Increase in feed rate resulted in a reduction in hole diameter, whereas delamination factor and mean burr thickness increased with feed rate. The study is, therefore, expected to be of help in the proper selection of feed rate in order to achieve acceptable hole quality after micro-drilling of PCB.  相似文献   

12.
Liquid crystal polymer (LCP) has attracted great attention as a potential candidate for high performance micro-wave substrate material in high frequency printed circuit boards (PCB). This is attributed to its low loss behaviour, excellent thermal stability, and outstanding chemical resistance. The use of LCP in PCB, however, is hindered by its extreme chemical inertness, causing fabrication challenges in desmearing and metallization processes. To overcome the challenges, plasma etching is suggested for its capability of smear removal, adhesion improvement and surface activation of PCB material. However, previous experimental and theoretical studies of the effects of plasma etching on LCP PCB at different treatment conditions are lacking. This paper thus evaluates recent developments on plasma etching technologies, involving the plasma etching investigation under different process conditions for manufacturing LCP PCB. Distinct process approaches are developed and proposed based on the illustrations of the experimental outcomes. Finally, examples are shown to demonstrate the effectiveness of the proposed plasma etching approach for controlling the fabrication of LCP PCB.  相似文献   

13.
During qualification testing, a printed circuit board (PCB) of an electronic device for a drilling tool failed. The circuit board was exposed to a 120 h aging cycle at 180°C followed by 10 thermal cycles between −40 and 180°C before a failure was noticed. During inspection numerous white whiskers were observed over a lead-free solder surface. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometry (EDS) were used for microscopic examination and material characterization of the whiskers, end-cap metallization, and the solder materials. The tin whisker formation was attributed to the compressive stress in the tin solder material, which was caused by diffusion of the end cap metallization, formation of intermetallics, and thermal cycling of the soldered components. Recommendations are given to mitigate/control whisker formation on the lead-free solder materials.  相似文献   

14.
杨卫英  伍智  李蓉 《真空》2007,44(4):44-46
本文就一般文献资料中很少见到的关于陶瓷金属化过程中不同的工艺及其条件、材料使用方法等方面引起的产品异常现象进行了深入分析,并提出了相应的解决措施。  相似文献   

15.
Ag sinter joining technology has been used in the advanced power applications to replace conventional soldering technology due to its high temperature stability, along with its excellent electrical and thermal conductivity. In this paper, we report the high-temperature reliability (250 °C for 1000 h) for die-attachment structures using Ag sintering technology on Cu substrates with different top metallization layers (Au and Ag), formed via different deposition processes (electroplating and sputtering). The bonding strength over 40 MPa and high-temperature reliability of sintered Ag on the sputtered Ag surface was the best among the systems studied here. Bonding quality and the bonding fracture behavior of sintered Ag on the different metallization substrates were characterized. Ag–Au solid solution was formed due to metallizaion Au atoms diffused into sintered Ag layer, leading to decreased shear strength under high temperature process. The influence of grain structure on the bonding quality at the interface between sintered Ag and the metallization Ag layers were discussed. It revealed that the grain size and orientation of the top metallization Ag layer influenced the bonding quality. The sintered Ag layer formed by Ag hybrid particles may have a selective orientation of metallization layer on the surface (111) of the Ag crystal. These results will be helpful to understand both technological perspectives for design and the applications of sintered Ag from the viewpoint of high-temperature reliability, as well as the fundamental understanding of its bonding quality mechanism with top metallization layers.  相似文献   

16.
张敏  张治  卢刚  何凤琴  杨振英 《材料导报》2017,31(Z1):201-204
以高效异质结电池为出发点,阐述了异质结电池技术发展现状,介绍了丝网印刷技术、电镀技术、喷墨打印技术三种不同的电池金属化技术,分析了不同方法在异质结电极制备中存在的优缺点,并对未来低成本、高效率异质结电池电极金属化技术进行了展望。  相似文献   

17.
High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 °C for Si devices and below 320 °C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.  相似文献   

18.
裴亚楠  谢东  郐睍  孙鸿  冷永祥  黄楠 《功能材料》2011,42(3):459-462
采用超高分子量聚乙烯(UHMWPE)表面金属化及类金刚石薄膜沉积复合处理工艺,提高超高分子量聚乙烯的耐磨性.首先采用磁过滤阴极真空弧源沉积技术(FCVA)在UHMWPE表面制备约30nm钛金属层,使UHMWPE表面金属化,然后再沉积DLC薄膜,研究结果表明,UHMWPE表面金属化后,DLC薄膜沉积过程中,电荷累积效应消...  相似文献   

19.
Direct metallization of plastics by high powerimpulse magnetron sputtering Even if polymers are today industrially used for decades the direct metallization of plastics is still a hot topic for research and development. Especially in light of the ban of hexavalent chromium an increasing demand for well‐adhering plastic metallization arises. High power impulse magnetron sputtering HIPIMS is a recent technology that can offer a high potential for successfully solving this challenge. This article focuses on the direct metallization of plastics by HIPIMS. In the frame of the investigations any pretreatment was ignored and the different polymers were directly under vacuum metallized. Compared to conventional mid‐frequency sputtering a significant improvement in adhesion was shown for different polymers. In detail the metallization of Plexiglas (PMMA) was investigated, since this polymer is highly challenging with respect to plasma processes. Due to the UV radiation damage of PMMA during plasma deposition direct metallization is usually not possible. Using ionized deposition it was possible to directly metallize the substrates with excellent adhering films without any interface layers or special pretreatments. The characterization of the substrate‐coating interface showed that for the well adhering films a cohesive fracture, i.e. a fracture within the polymer occurred.  相似文献   

20.
Al2 O3 陶瓷表面金属化   总被引:5,自引:1,他引:5  
沈伟  彭德全  沈晓丹 《材料保护》2005,38(3):9-11,34
为了提高陶瓷与金属覆盖层的结合强度,较系统地研究了Al2O3(96%)陶瓷表面金属化过程,研究内容包括:陶瓷的表面刻蚀、表面催化、化学沉积条件等,综合分析了金属化层与陶瓷基体之间结合强度的影响因素,研究发现在熔融的NaOH浴中,可获得最佳刻蚀表面形貌,Al2O3(96%)陶瓷基片上化学镀层的最佳结合强度为25.0~32.5 MPa.为开发性应用提供了建设性的意见.  相似文献   

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