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印刷线线路板(PCB)孔壁化学镀铜金属化前的碱性除油处理,有利于调整其电荷和后期的催化化学镀铜反应。采用背光级数、SEM及EDS等方法研究了碱性除油液中OP-10乳化剂浓度对PCB孔壁化学镀铜性能的影响。结果表明,OP-10浓度对PCB的碱性除油有显著影响:不加OP-10,PCB孔壁化学铜镀后基材裸露较多,漏光现象严重,背光级数仅为6级;随OP-10浓度的增大,PCB孔壁镀铜层的背光级数及镀速均先增大后减小,当其为2.5mL/L时,镀铜层几乎全部覆盖基体,背光级数高达9.5级;OP-10的主要作用是吸附在油污与溶液界面处,降低界面张力,加强碱液对PCB孔壁的润湿,去除其上的油污,确保后续化学镀铜的成功。 相似文献
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随着集成电路的特征尺寸减小至深亚微米以下,互连延迟成为集成电路性能进一步提高的主要障碍.为解决互连延迟带来的危机,国际上已开发出以铜为互连材料,大马士革工艺为制造方法的铜互连工艺以取代亚微米时代的铝互连工艺.本文介绍了大马士革工艺中铜金属化以及阻挡层的研究现状. 相似文献
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针对手持终端电子消费类产品的PCB工艺设计,通过规范产品的PCB工艺设计,规定PCB的工艺设计的相关参数,使得PCB设计满足可生产性,可测试性的技术规范要求在产品设计过程中,构建产品工艺,技术,质量和成本优势。适用于手持终端电子消费类PCB为贴装基板的SMD元件的设计和制造。 相似文献
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应用化学镀镍的方法实现了氮化铝的金属化。为得到较大的氮化铝金属化层粘附力,运用基于稳健估计的神经网络研究氮化铝金属化中化学镀镍的反应参数与金属层粘附力的关系。为使神经网络更加稳健,本文根据统计学原理,在前馈神经网络基础上,采取稳健估计方法改进神经网络。建立了定量预测粘附力性能的模型,并进行实验验证。确定金属化工艺中稳定的优化工作区域。结果表明,稳健估计方法既有传统神经网络的优点,又有较强的抵抗异常 相似文献
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新型电子陶瓷材料氮化铝工艺进展与应用前景 总被引:10,自引:0,他引:10
该简要回顾了新型电子陶瓷材料氮化铝的发展历程,探讨了其制造工艺与金属化工艺,分析了其在技术性能方面的优缺点,并研究了最新应用领域。 相似文献
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针对手持终端电子消费类产品的PCB工艺设计,通过规范产品的PCB工艺设计,规定PCB的工艺设计的相关参数,使得PCB设计满足可生产性,可测试性的技术规范要求在产品设计过程中,构建产品工艺,技术,质量和成本优势。适用于手持终端电子消费类PCB为贴装基板的SMD元件的设计和制造。 相似文献
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Achievement of good surface quality remains a concern during the micro-drilling of printed circuit board (PCB). Although a great deal of work is reported on the micro-drilling of PCB, information on the effect of drilling parameters like feed rate on different characteristics of hole quality is relatively scarce. It is known that stresses during micro-drilling of PCBs are critical issues. However, their correlation with hole quality is yet to be reported. The current work utilizes finite element analysis (FEA)-based simulation of deformation and stresses to explain various parameters of hole quality such as diameter, delamination factor and burr thickness. Effect of feed rate on these parameters has also been established. Results indicated that stresses play a vital role in influencing the hole quality of PCB. Increase in feed rate resulted in a reduction in hole diameter, whereas delamination factor and mean burr thickness increased with feed rate. The study is, therefore, expected to be of help in the proper selection of feed rate in order to achieve acceptable hole quality after micro-drilling of PCB. 相似文献
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K. C. Yung H. Liem H. S. Choy T. M. Yue 《Journal of Materials Science: Materials in Electronics》2010,21(9):954-962
Liquid crystal polymer (LCP) has attracted great attention as a potential candidate for high performance micro-wave substrate
material in high frequency printed circuit boards (PCB). This is attributed to its low loss behaviour, excellent thermal stability,
and outstanding chemical resistance. The use of LCP in PCB, however, is hindered by its extreme chemical inertness, causing
fabrication challenges in desmearing and metallization processes. To overcome the challenges, plasma etching is suggested
for its capability of smear removal, adhesion improvement and surface activation of PCB material. However, previous experimental
and theoretical studies of the effects of plasma etching on LCP PCB at different treatment conditions are lacking. This paper
thus evaluates recent developments on plasma etching technologies, involving the plasma etching investigation under different
process conditions for manufacturing LCP PCB. Distinct process approaches are developed and proposed based on the illustrations
of the experimental outcomes. Finally, examples are shown to demonstrate the effectiveness of the proposed plasma etching
approach for controlling the fabrication of LCP PCB. 相似文献
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Nausha Asrar Oliver Vancauwenberghe Sebastien Prangere 《Journal of Failure Analysis and Prevention》2007,7(3):179-182
During qualification testing, a printed circuit board (PCB) of an electronic device for a drilling tool failed. The circuit
board was exposed to a 120 h aging cycle at 180°C followed by 10 thermal cycles between −40 and 180°C before a failure was
noticed. During inspection numerous white whiskers were observed over a lead-free solder surface. Scanning electron microscopy
(SEM) and energy-dispersive X-ray spectrometry (EDS) were used for microscopic examination and material characterization of
the whiskers, end-cap metallization, and the solder materials. The tin whisker formation was attributed to the compressive
stress in the tin solder material, which was caused by diffusion of the end cap metallization, formation of intermetallics,
and thermal cycling of the soldered components. Recommendations are given to mitigate/control whisker formation on the lead-free
solder materials. 相似文献
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Chuantong Chen Katsuaki Suganuma Tomohito Iwashige Kazuhiko Sugiura Kazuhiro Tsuruta 《Journal of Materials Science: Materials in Electronics》2018,29(3):1785-1797
Ag sinter joining technology has been used in the advanced power applications to replace conventional soldering technology due to its high temperature stability, along with its excellent electrical and thermal conductivity. In this paper, we report the high-temperature reliability (250 °C for 1000 h) for die-attachment structures using Ag sintering technology on Cu substrates with different top metallization layers (Au and Ag), formed via different deposition processes (electroplating and sputtering). The bonding strength over 40 MPa and high-temperature reliability of sintered Ag on the sputtered Ag surface was the best among the systems studied here. Bonding quality and the bonding fracture behavior of sintered Ag on the different metallization substrates were characterized. Ag–Au solid solution was formed due to metallizaion Au atoms diffused into sintered Ag layer, leading to decreased shear strength under high temperature process. The influence of grain structure on the bonding quality at the interface between sintered Ag and the metallization Ag layers were discussed. It revealed that the grain size and orientation of the top metallization Ag layer influenced the bonding quality. The sintered Ag layer formed by Ag hybrid particles may have a selective orientation of metallization layer on the surface (111) of the Ag crystal. These results will be helpful to understand both technological perspectives for design and the applications of sintered Ag from the viewpoint of high-temperature reliability, as well as the fundamental understanding of its bonding quality mechanism with top metallization layers. 相似文献
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N. GovindarajuAuthor VitaeR.N. SinghAuthor Vitae 《Materials Science and Engineering: B》2011,176(14):1058-1072
High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 °C for Si devices and below 320 °C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance. 相似文献
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Dr. Ralf Bandorf Stefan Waschke Dr. Michael Vergöhl Prof. Dr.‐Ing. Guido Grundmeier Prof. Dr. Günter Bräuer 《真空研究与实践》2015,27(4):18-23
Direct metallization of plastics by high powerimpulse magnetron sputtering Even if polymers are today industrially used for decades the direct metallization of plastics is still a hot topic for research and development. Especially in light of the ban of hexavalent chromium an increasing demand for well‐adhering plastic metallization arises. High power impulse magnetron sputtering HIPIMS is a recent technology that can offer a high potential for successfully solving this challenge. This article focuses on the direct metallization of plastics by HIPIMS. In the frame of the investigations any pretreatment was ignored and the different polymers were directly under vacuum metallized. Compared to conventional mid‐frequency sputtering a significant improvement in adhesion was shown for different polymers. In detail the metallization of Plexiglas (PMMA) was investigated, since this polymer is highly challenging with respect to plasma processes. Due to the UV radiation damage of PMMA during plasma deposition direct metallization is usually not possible. Using ionized deposition it was possible to directly metallize the substrates with excellent adhering films without any interface layers or special pretreatments. The characterization of the substrate‐coating interface showed that for the well adhering films a cohesive fracture, i.e. a fracture within the polymer occurred. 相似文献