准一维纳米结构ZnO的制备研究进展

准一维纳米结构ZnO因其优良的光电性质,在制作纳米电子器件和纳米光电子器件等许多领域表现出巨大的应用潜力.对准一维纳米结构ZnO在衬底上的制备生长方法、性质及衬底的影响作了简要的叙述.     

一维ZnO纳米结构掺杂的研究进展

一维ZnO纳米结构,具有宽带隙半导体性、压电性、室温下大激子束缚能、各向异性、低维结构等特性,故被广泛深入地研究应用于诸多领域。采用各种途径生长的形貌丰富的一维ZnO纳米结构,被广泛应用于纳米发电机、太阳能电池、光电化学分解水、发光二极管、激光器、气体敏感器件、自旋电子器件等领域。然而,本征一维ZnO纳米结构还存在很多缺点,限制其应用范围。通过掺杂可以增强或赋予其某些特殊功能,近年来一维ZnO纳米结构掺杂引起研究者的极大关注。从掺杂类型的角度出发,综述了近年来国内外一维ZnO纳米结构掺杂方面的研究进展,包括n型、p型、稀磁半导体以及其它掺杂,讨论了一维ZnO纳米结构掺杂存在的主要问题,并对进一步研究与开发提出展望。     

一维纳米ZnO阵列的制备及其在染料敏化太阳能电池方面的应用研究进展

一维定向生长的纳米ZnO阵列具有较高的高温强度、硬度、优异的化学稳定性和物理化学特性,在气敏传感器、场发射、纳米结构染料敏化太阳能电池等方面有着广泛的应用.制备一维ZnO结构的方法多种多样,如水热法、化学气相沉积法、超声化学法等.综述并比较了一维纳米ZnO阵列的结构特点、生长机理、制备方法及其在染料敏化太阳能电池方面的应用进展和光电特性,分析了一维纳米ZnO阵列的光电传输机理及国内外研究现状、应用前景和发展趋势.     

石墨衬底上低维ZnO纳米材料的生长(英文)

本研究成功地在石墨衬底上制备了低维ZnO材料,即一维的ZnO纳米棒和二维的ZnO薄膜。采用X射线衍射、场发射扫描电镜、光致发光谱和反射谱等测量技术对石墨衬底上制备的低维ZnO纳米材料的晶体结构、形貌和光学特性进行了表征。结果发现在室温条件下,准一维的ZnO纳米棒和二维的ZnO薄膜都表现出了较好的近带边发射,基本探测不到由杂质和缺陷等引起的深能级发光,并且这种低维ZnO材料/石墨衬底复合结构在300~800 nm光谱范围内具有较低的反射率。本实验结果对于ZnO基光电子器件性能的提高以及在太阳能电池领域的应用具有重要意义。     

一维ZnO纳米结构的场发射研究进展

一维纳米结构材料因其优异的电、光及场发射特性，在光电器件、场发射器件等方面具有重要的应用价值而备受关注。ZnO因具有优异的化学及热稳定性，并且其一维纳米结构具有极大的场增强因子，因而在场发射器件阴极中有良好的应用前景。首先简要介绍了ZnO的结构与性质，并重点介绍了ZnO一维纳米材料的常用制备技术及其在场发射领域的研究进展。     

ZnO纳米棒/石墨烯异质结构的应用研究进展

ZnO纳米棒具有优异的光学性质,石墨烯具有优良的电学性质并且可变形,制备出高质量ZnO纳米棒/石墨烯异质结构能够发挥两者协同效应,有望在高性能光电子器件中实现重要应用。综述了近几年来国内外关于ZnO纳米棒/石墨烯异质结构的最新研究进展,重点包括该结构的各种制备技术及特点,该结构在发光器件、太阳能电池器件、光电探测器以及光催化剂等方面的应用研究进展,最后展望了其未来发展趋势和研究重点。     

准一维ZnO纳米材料及器件的研究进展

准一维纳米ZnO因在微电子和光电子领域具有广阔前景而受到关注.综述了近年来准一维ZnO纳米材料的主流制备方法及其相关机理,介绍了一维纳米阵列的实现方案,总结了各类准一维ZnO纳米器件的研究进展,探讨了研究现状并展望了未来的研究方向.     

低维结构策略构筑基于钙钛矿纳米片/氧化锌纳米线的柔性宽光谱探测器（英文）

柔性光电探测器具有轻便、易携带和优异的大面积兼容性等特点,在下一代光电子器件领域具有巨大的应用潜力.柔性光电探测器面临的主要挑战是在反复弯曲、拉伸、折叠等形变状态下难以保持优异的性能.本文通过低维度结构策略构筑了基于CsPbBr3纳米片和ZnO纳米线的柔性光电探测器.得益于一维纳米线和二维纳米片的高柔性,所构筑的光电探测器在各种应力下表现出优异的工作稳定性.例如,在弯曲1000次之后,器件的性能没有明显变化.此外,由于ZnO和CsPbBr3自身的光吸收特性,所构筑的柔性光电探测器展现出宽光谱光电响应能力(涵盖紫外和可见波段).在紫外和可见区域的峰值响应度分别为3.10和0.97 A W^-1,其相应的探测率分别为5.57×10^12和1.71×10^12Jones.本文针对柔性、高性能集成光电探测器提出的维度构筑策略,在未来智能、可穿戴光电子器件领域有着巨大的应用前景.     

一维纳米结构材料研究进展

一维纳米材料在纳米电子学、纳米光电子学、超高密度存储和扫描探针显微镜等领域具有潜在的应用前景,已成为21世纪材料领域研究的热点.本文介绍了一维纳米材料的特性和制备方法,并阐述了一维纳米材料的应用状况和前景,以及国内外在一维纳米材料方面的研究进展.     

纳米硅薄膜及其太阳电池研究进展

纳米硅薄膜具有新颖的结构特征和一系列独特的物理性质,可望应用于新型光电子器件、量子功能器件、集成电路等领域.本文综述了纳米硅薄膜的研究现状及其优良的光电性能和纳米硅薄膜太阳电池的研究进展,指出在生产制备与性能方面纳米硅薄膜太阳电池所具有的优势,具有良好的发展前景.     

Progress in the growth and characterization of nonpolar ZnO films

Zinc oxide (ZnO) is an important material for its potential applicability to short-wavelength optoelectronic devices such as light emitting diodes (LEDs) and laser diodes (LDs). Nonpolar ZnO materials have been developed in recent years to avoid the strong internal electric fields in active regions of optoelectronic devices and improve luminescence efficiency. The growth and physical properties of nonpolar ZnO films, which are essential for fabricating optoelectronic devices and improving device performance, still remains not well understood. In this review, the technologies for preparation of nonpolar ZnO epitaxial films are summarized, and recent developments are described. Then the main characteristics of nonpolar ZnO films are discussed with the deviations from those of polar ZnO films, including morphology, structural defects, anisotropic strain, optical, and electrical properties. The anisotropic electron transport and strains correlated strongly with the anisotropic surface morphologies of nonpolar ZnO films. Fabricating nonpolar ZnO films with high quality should be further developed to decrease the structural defect densities for substantial improvement of device performance, and intensive studies on their characteristics are especially important for device applications.     

ZnO nanosquids: branching nanowires from nanotubes and nanorods

One-dimensional (1D) semiconductor nanostructures are promising building blocks for future nanoelectronic and nanophotonic devices. ZnO has proven to be a multifunctional and multistructural nanomaterial with promising properties. Here we report the growth of ZnO nanosquids which can be directly grown on planar oxidized Si substrates without using catalysts and templates. The formation of these nanosquids can be explained by the theory of nucleation, and the vapor-solid crystal growth mechanism. The branching nanowires of these ZnO nanosquids could have potential application in multiplexing future nanoelectronic devices. The sharp band-edge emission at approximately 380 nm indicates that these ZnO nanosquids are also applicable for interesting optoelectronic devices.     

ZnO的点缺陷结构与p型化转变的研究进展

ZnO是一种典型的直带隙宽禁带半导体材料,是下一代光电材料的代表.但由于P型化转变困难,使ZnO在光电领域的应用受到了极大限制.系统分析了ZnO的本征点缺陷结构和P型化转变方面的理论和实验研究成果,认为ZnO的n型电导应起源于本征点缺陷Zn或Vo.通过V族元素实现P型化转变的关键在于其稳定性,因此通过亚稳的点缺陷之间的相互作用实现相对较稳定的p-ZnO是V族元素掺杂实现P型化转变的研究方向.考虑到I族元素在ZnO中的固溶度较高且受主能级较浅,通过I族元素的掺杂实现高电导p-ZnO也是实现P型化转变的思路;但是Ⅰ族元素的掺杂会引起严重的自补偿,因此实现I族元素在ZnO晶格中的定位是Ⅰ族元素掺杂实现P型化转变的研究方向.     

ZnO@Porous Media, Their PL and Laser Effect

Optoelectronic nanocomposites are a new class of materials, which exhibit very interesting and particular properties and attract a growing attention due to their potential applications in information storage and optoelectronic devices. Zinc oxide, ZnO, is one of the most interesting binary semiconductor （3.37 eV） with very important optical properties, which can be used in the fields such as short wavelength lasers, blue light emitting diodes, UV detectors, gas sensors, etc. This paper reviews the very recent progress in the prepa- ration of silica-based ZnO nanocomposites. After an introduction reviewing the theoretical background, the article will begin with a survey of the optical properties and the quantum size effect （QSE） of ZnO/SiO2 nanocomposites prepared by the inclusion of ZnO nanoclusters inside silica mesoporous materials. The second part will focus on one of the most interesting properties of ZnO/SiO2 nanocomposites, which is the random lasing effect after one- and two-photon excitation. The final part will deal with the introduction of ZnO nanoparticles inside microporous zeolites and the observation of QSE. For comparison, the photoluminescence （PL） and QSE properties of ZnS nanoparticles occluded in mesoporous media are also described. New potential applications will be discussed since short-wavelength devices are required by industry to design, for instance, new information storage supports and biolabelling devices.     

半导体ZnO单晶生长的技术进展

ZnO单晶是一种具有半导体、发光、压电、电光、闪烁等性能的多功能晶体材料。近年来,它在紫外光电器件和GaN衬底材料等方面的应用前景而使其成为新的研究热点。本文综述了ZnO单晶助熔剂法、水热法、气相法等生长技术的研究进展,结合ZnO单晶的化学结构,探讨了该晶体的结晶习性及生长技术发展方向。     

Electronic structure and optical properties in ZnO:M(Co, Cd): Effect of band-gap variation

ZnO doped with some transitions metals (ZnO:M) has several significant potential application. ZnO:Co is proposed to be used in advanced spintronic devices due to its high Curie temperature and large magnetic moments per transition metal. ZnO:Cd has potential applications in short-wavelength optoelectronic devices. This work focuses on an ab-initio study of the electronic and optical properties of ZnO:M doped with Co, and Cd. Theoretical calculations have been done with different computational codes, using the density functional theory (DFT) at the GGA and GGA+U level. The latter introduces a Hubbard term correction in the “d” levels of the Zn and Co. We used different supercells in order to have different realistic dilution levels which can be achieved in experiments. Doping effects on the features of the optical absorption are also studied and analysed in this work.     

The recent advances of research on p-type ZnO thin film

ZnO is a direct wide-band gap (3.37 eV) compound semiconductor with large exciton binding energy (60 meV) at room temperature. Therefore it has a strong potential for various short-wavelength optoelectronic device, and now attracts tremendous renew interests for developing highly efficient ZnO-based optoelectronic devices. While high quality ZnO p–n junction materials obtained is the key step of its optoelectronic application. Whereas ZnO thin film is naturally only n-type conductivity due to a large number of native defects, such as oxygen vacancies and zinc interstitials, which lead to difficulty in achieving p-type ZnO thin film. Therefore the fabrication of p-type ZnO thin film has been a key and hotspot of the research on ZnO. This article summarizes the recent advances of the studies on p-type ZnO thin film and the correlative several important breakthroughs in ZnO homo-junction devices based on succeeding on fabrication of p-type ZnO film. Although the achievement obtained as summarized, there is also a long way from the real application of ZnO-based optoelectronic device. We here also discuss the problem and relevant possible solution for the fabrication of p-type ZnO film and its optoelectronic application. And forecast the preparation trends of p-type ZnO thin film.     

Synthesis and structural-optical properties of Ga-doped ZnO nanowires by hot-walled pulsed laser deposition method

Well-aligned single-crystalline zinc oxide (ZnO) and Ga doped ZnO (GZO) NWs (NWs) were successfully fabricated on Au film catalyzed sapphire substrate using vapor-liquid-solid (VLS) method in hot-walled pulsed laser deposition (HW-PLD). The structural and optical properties of Ga doped ZnO NWs have been investigated depending on various concentration of Ga dopants in ZnO NWs. As increasing Ga concentration, stacking faults were observed by using FE-SEM and an exciton bound to a neutral donor (D(0)X) peak was clearly observed by using PL spectra. From the structural and optical properties, the ZnO NWs by doping could be application to electronic and optoelectronic devices, such as nano-FETs, nano-inverters, nano-logic circuits and nano-sensors.     

Tuning photoluminescence properties of ZnO nanorods via surface modification

Zinc oxide (ZnO) is a versatile material that has been used in photocatalysis, solar cells, chemical sensors, and piezoelectric transducers. All these are directly related to its surface properties. Here ZnO nanorod arrays were successfully synthesized by electrochemical deposition method, the surface of which was modified by dopamine, a robust anchor. Compared with pristine ZnO sample, the surface modification can greatly enhance the ultraviolet and visible-light photoluminescence. This is due to the formation of polydopamine on the nanorod surface, which may act as a dye that can be photoexcited. The resultant photogenerated electrons can inject into the conduction band of ZnO and take part in the luminescent process. These results may provide a foundation for real applications of ZnO nanomaterials in optoelectronic devices and, especially, for the applications in biological field as both the dopamine and ZnO are biocompatible materials.     

High quality ZnO/CuO nanocomposites synthesized by microwave assisted reaction

Highly crystalline zinc oxide (ZnO) and ZnO/CuO nanocomposite powders have been synthesized by a facile microwave irradiation method. The resulting powders were characterized in terms of structural, optical and morphological properties by X-ray diffraction (XRD), room temperature photoluminescence (PL) spectroscopy and scanning electron microscopy (SEM), respectively. XRD patterns revealed the formation of ZnO/CuO nanocomposites with good crystalline quality. SEM images displayed the formation of hexagonal ZnO and flower shaped agglomeration of ZnO/CuO nano-flakes with uniform production. The strong UV emission peak observed at around 380 nm show enhanced intensity for ZnO/CuO nanocomposite. Compared to ZnO nanoparticles, ZnO/CuO composites exhibit good transparency with sharp absorbance edges. The simplicity of synthesis route coupled with better optical and PL emission properties propose the microwave synthesized ZnO/CuO nanocomposite powders a promising material for optoelectronic devices.