New BNL 3D-Trench electrode Si detectors for radiation hard detectors for sLHC and for X-ray applications

A new international-patent-pending (PCT/US2010/52887) detector type, named here as 3D-Trench electrode Si detectors, is proposed in this work. In this new 3D electrode configuration, one or both types of electrodes are etched as trenches deep into the Si (fully penetrating with SOI or supporting wafer, or non-fully penetrating into 50-90% of the thickness), instead of columns as in the conventional (“standard”) 3D electrode Si detectors. With trench etched electrodes, the electric field in the new 3D electrode detectors are well defined without low or zero field regions. Except near both surfaces of the detector, the electric field in the concentric type 3D-Trench electrode Si detectors is nearly radial with little or no angular dependence in the circular and hexangular (concentric-type) pixel cell geometries. In the case of parallel plate 3D trench pixels, the field is nearly linear (like the planar 2D electrode detectors), with simple and well-defined boundary conditions. Since each pixel cell in a 3D-Trench electrode detector is isolated from others by highly doped trenches, it is an electrically independent cell. Therefore, an alternative name “Independent Coaxial Detector Array”, or ICDA, is assigned to an array of 3D-Trench electrode detectors. The electric field in the detector can be reduced by a factor of nearly 10 with an optimal 3D-Trench configuration where the junction is on the surrounding trench side. The full depletion voltage in this optimal configuration can be up to 7 times less than that of a conventional 3D detector, and even a factor of two less than that of a 2D planar detector with a thickness the same as the electrode spacing in the 3D-Trench electrode detector. In the case of non-fully penetrating trench electrodes, the processing is true one-sided with backside being unprocessed. The charge loss due to the dead space associated with the trenches is insignificant as compared to that due to radiation-induced trapping in sLHC environment. Since the large electrode spacing (up to 500 μm) can be realized in the 3D-Trench electrode detector due to their advantage of greatly reduced full depletion voltage, detectors with large pixel cells (therefore small dead volume) can be made for applications in photon science (e.g. X-ray).     

Development of a total reflection X-ray fluorescence spectrometer for ultra-trace element analysis

A simple and fairly inexpensive total reflection X-ray fluorescence (TXRF) spectrometer has been designed, constructed and realized. The spectrometer is capable of ultra-trace multielement analysis as well as performs surface characterization of thin films. The TXRF setup comprises of an X-ray generator, a slit-collimator arrangement, a monochromator/cutoff-stage, a sample reflector stage and an X-ray detection system. The glancing angle of incidence on the two reflectors is implemented using a sine-bar mechanism that enables precise angle adjustments. An energy dispersive detector and a GM counter are employed for measuring respectively the fluorescence intensities and the direct X-ray beam intensity. A Cu-target X-ray generator with its line focus window is used as an excitation source. The spectrometer is quite portable with its compact design and use of a peltier cooled solid state detector for energy dispersive detection. Alignment and characterization of the TXRF system has been performed and the minimum detection limits for various elements have been determined to be in the range of 100 pg to 5 ng even at low X-ray generator powers of 30 kV, 5 mA. The capability of the TXRF system developed for thin film characterization is also demonstrated.     

Advanced Li2S/Si Full Battery Enabled by TiN Polysulfide Immobilizer

Lithium sulfide (Li₂S) is a promising cathode material with high capacity, which can be paired with nonlithium metal anodes such as silicon or tin so that the safety issues caused by the Li anode can be effectively avoided. However, the Li₂S full cell suffers from rapid capacity degradation due to the dissolution of intermediate polysulfides. Herein, a Li₂S/Si full cell is designed with a Li₂S cathode incorporated by titanium nitride (TiN) polysulfide immobilizer within parallel hollow carbon (PHC). This full cell delivers a high initial reversible capacity of 702 mAh g_Li2S^?1 (1007 mAh g_sulfur^?1) at 0.5 C rate and excellent cyclability with only 0.4% capacity fade per cycle over 200 cycles. The long cycle stability is ascribed to the strong polysulfide anchor effect of TiN and highly efficient electron/ion transport within the interconnected web‐like architecture of PHC. Theoretical calculations, self‐discharge measurements, and anode stability experiments further confirm the strong adsorption of polysulfides on the TiN surface. The present work demonstrates that the flexible Li₂S cathode and paired Si anode can be used to achieve highly efficient Li‐S full cells.     

新型锂离子电池正极材料Li_3V_2(PO_4)_3改性研究进展

具有高能量密度、高电压平台、高稳定性、高安全性的新型锂离子二次电池正极材料Li3V2(PO4)3,近年来成为研究热点。综述了该材料具有电化学活性的单斜晶系的结构及其对应的电化学特性,并且重点介绍了该材料碳包覆、碳掺杂、金属离子掺杂等改性方法的最新研究进展,并对其实用化前景进行展望。     

In situ detection of F2 laser-induced oxidation on hydrogen-terminated Si(111) and Si(110) surfaces by Fourier transform infrared transmission spectroscopy

Although oxidation of silicon has been intensively investigated experimentally and theoretically, the composition and structure of the interface region between the bulk oxide and silicon are not very well known. In this work, we report on the vacuum UV laser-induced oxidation of well-defined atomically flat Si(111)-(1×1):H and Si(110)-(1×1):H surfaces, prepared by wet-chemical processing, using an F₂ laser (157 nm). The silicon samples were irradiated under ultra high vacuum conditions in water and oxygen atmospheres. The photo-induced partial oxidation of the first monolayer, controlled by the oxidant pressure, was monitored by in situ Fourier transform infrared transmission spectroscopy with different photon detectors. The chemical reactions occurring at the surface were monitored by the shift and decreasing strength of the stretching vibration of Si---H surface bonds. The IR absorption spectra recorded during surface processing yield detailed information on the rearrangement of chemical bonds with a sensitivity reaching monolayer resolution.     

Boron ions B interaction with Si(100) and Ge(100) surfaces

The goal of this work is simulation of possible structures, formed by boron ions (B⁺) during adsorption on Si(100) and Ge(100) surfaces. Calculations were carried out using a semi-empirical method, known as the Modified Neglect of Differential Overlap method (MNDO). The surface was simulated using of Si₄₉(Ge₄₉) and Si₆₃(Ge₆₃) clusters. Results of quantum-chemical calculations the boron ion (B⁺) interaction with Si(100) − 2 × 1 and Ge(100) − 2 × 1 surfaces are presented and show adsorption barriers for boron ions and migration barriers of adsorbed boron ion (during migration along surface dimer row and along surface dimer).     

Efficiency calibration of a Si(Li) detector in the low-energy region using electron bremsstrahlung

In the low-energy region the determination of the detector efficiency is complicated by the fact of nonavailability of certificated calibration sources. To solve this problem the use of electron bremsstrahlung for determining the relative photon detection efficiency of a Si(Li) detector in the low-energy range 0.5–19 keV is proposed. The calibration is based on energy dispersive measurements of electron bremsstrahlung emitted by an X-ray tube. Model spectra are computed from thick-target bremsstrahlung spectra in a semiclassical approximation and from a physical model for the detector response. Model spectra are fitted to the measured spectra using a parametric adaptor term. Thereby, the error of the determined detector efficiency is approximately 5%.     

Energetics of Ge addimers on the Si(1 0 0) and Ge(1 0 0) surfaces: a comparative study

The adsorption energetics of Ge dimers on the (1 0 0) surfaces of Ge and Si has been investigated using the first-principles molecular dynamics method. Four high-symmetry configurations have been considered and fully relaxed. The most stable configuration for Ge dimers on Si(1 0 0) is found to be in the trough between two surface dimer rows, oriented parallel to the substrate Si dimers. These results are consistent with recent experimental studies of the system using the scanning tunneling microscopy (STM), and help to clarify some existing controversies on the interpretation of the STM images. In contrast, for Ge dimers on Ge(1 0 0), the most stable configuration is on top of the substrate dimer row.     

锂离子电池三元复合阴极材料研究进展

具有α-NaFeO2层状结构复合过渡金属氧化物Li(Ni1-x-yMnx-Coy)O2是锂离子电池阴极材料的研究热点之一。对近几年锂离子电池Li(Ni1-x-yMnx-Coy)O2复合材料的发展近进行综述,探讨了三元材料及包覆、掺杂、改变过渡金属比例及对其性能的影响,指出了该类锂离子阴极材料的发展趋势。     

Si(111)表面亚稳态重构的STM研究

利用扫描隧道显微镜 (STM) ,研究了Si(111)表面的 2× 2、c2× 4、9× 9和 11× 11等各种亚稳态结构。与已经发表的研究结果相比 :2× 2和c2× 4重构区域规则且面积更大 ,原子分辨的图像清晰稳定 ;在不同亚稳态之间的畴界处 ,发现存在2种不同的环形结构。从原子密度和能量两方面 ,对各种亚稳态重构的形成机制进行了讨论