Multiferroic properties of BiFeO3/Bi4Ti3O12 double-layered thin films fabricated by chemical solution deposition

Multiferroic BiFeO₃/Bi₄Ti₃O₁₂ (BFO/BTO) double-layered film was fabricated on a Pt(111)/Ti/SiO₂/Si(100) substrate by a chemical solution deposition method. The effect of an interfacial BTO layer on electrical and magnetic properties of BFO was investigated by comparing those of pure BFO and BTO films prepared by the same condition. The X-ray diffraction result showed that no additional phase was formed in the double-layered film, except BFO and BTO phases. The remnant polarization (2P_r) of the double-layered film capacitor was 100 μC/cm² at 250 kV/cm, which is much larger than that of the pure BFO film capacitor. The magnetization-magnetic field hysteresis loop revealed weak ferromagnetic response with remnant magnetization (2M_r) of 0.4 kA/m. The values of dielectric constant and dielectric loss of the double-layered film capacitor were 240 and 0.03 at 100 kHz, respectively. Leakage current density measured from the double-layered film capacitor was 6.1 × 10^− 7 A/cm² at 50 kV/cm, which is lower than the pure BFO and BTO film capacitors.     

Surface characteristics and bioactivity of oxide film on titanium metal formed by thermal oxidation

In this study, we characterized the surface of oxide film formed on titanium metal through the use of thermal treatment and investigated the effect of surface characteristics on the bioactivity of titanium. The as-received sample group was prepared by polishing and cleaning CP-Ti as a control group, and thermally oxidized sample groups were prepared by heat treating at 530, 600, 700, 800, 900, and 1000°C respectively. Micro-morphology, crystalline structure, chemical composition, and binding state were evaluated using FE-SEM, XRD, and XPS. The bioactivity of sample groups was investigated by observing the degree of calcium phosphate formation from immersion testing in MEM. The surface characterization tests showed that hydroxyl group content in titanium oxide film was increased, as the density of titanium atoms was high and the surface area was large. In MEM immersion test, initial calcium phosphate formation was dependent upon the thickness of titanium oxide, and resultant calcium phosphate formation depended on the content of the hydroxyl group of the titanium oxide film surface.     

Electrochemical properties of LiCoO2 thin film electrode prepared by ink-jet printing technique

LiCoO₂ thin film electrodes with a thickness of about 1.2 μm were fabricated by an improved ink-jet printing method. LiCoO₂ powder was synthesized via a modified sol-gel method. The LiCoO₂ ink could be easily prepared by an ultrasonic dispersion technique using a commercially available surfactant. The jet printing LiCoO₂ thin films were characterized by X-ray diffraction and Raman spectroscopy, scanning electron microscopy, cyclic voltammetry, charge/discharge cycling and electrochemical impedance spectroscopy. Experimental results showed that the LiCoO₂ thin film electrodes present excellent cycling performance at high discharge rate. At discharge current density of 180 μA/cm² (at this current density, the battery can be fully discharged in 12 min), the initial discharge capacity was 120 mAh/g, and after 100 charge-discharge cycles, the capacity loss was only 5%. It can be even charge-discharged at the current density as high as 384 μA/cm².     

Effects of a Bi2Ti2O7 seeding layer on properties of Bi3.5Nd0.5Ti3O12 thin film

A thin-film bilayer structure consisting of polycrystalline Bi_0.5Nd_0.5Ti₃O₁₂ (BNdT) and preferential (111)-orientated Bi₂Ti₂O₇ (BTO) has been prepared on n-type Si (100) substrate by a chemical solution deposition and spin-coating technique. The crystallization of BNdT film can be enhanced and the surface consists of larger grains because of the intervention of BTO. We fabricated the Au/BNdT/BTO/Si and Au/BNdT/Si structures, respectively. Compared with BNdT, the BNdT/BTO film shows better insulating and memory properties. The room temperature resistivity is 10¹¹ Ω cm at a dc bias of 5 V. The C–V hysteresis curve is referred to as polarization-type switching and the memory window is about 3 V. All these results show that the BTO is an effective diffusion-barrier and plays a brilliant role as a seeding layer.     

Fabrication and characterization of bioactive composite coatings on Mg–Zn–Ca alloy by MAO/sol–gel

High corrosion rate and accumulation of hydrogen gas upon degradation impede magnesium alloys’ clinical application as implants. In this work, micro-arc oxidation (MAO) was used to fabricate a porous coating on magnesium alloys as an intermediate layer to enhance the bonding strength of propolis layer. Then the composite coatings were fabricated using sol–gel method by dipping sample into the solution containing propolis and polylactic acid at 40°C. The corrosion resistance of the samples was determined based on potentiodynamic polarization experiments and immersion tests. Biocompatibility was designed by observing the attachment and growth of wharton’s jelly-derived mesenchymal stem cells (WJCs) on substrates with MAO coating and substrates with composite coatings. The results showed that, compared with that of Mg–Zn–Ca alloy, the corrosion current density of the samples with composite coatings decreased from 5.37 × 10⁻⁵ to 1.10 × 10⁻⁶ A/cm² and the corrosion potential increased by 240 mV. Composite coatings exhibit homogeneous corrosion behavior and can promote WJCs cell adhesion and proliferation. In the meantime, pH value was relatively stable during the immersion tests, which may be significant for cellular survival. In conclusion, our results indicate that composite coatings on Mg–Zn–Ca alloy fabricated by MAO/sol–gel method provide a new type bioactive material.     

Corrosion and wear resistance of AZ91D magnesium alloy with and without microarc oxidation coating in Hank’s solution

Immersion test, electrochemistry test and block-on-cylinder type wear test have been applied to study the corrosion and wear resistance of AZ91D Mg alloy with and without microarc oxidation (MAO) treatment in Hank’s solution. Through MAO, a ceramic coating is directly formed on the surface of AZ91D Mg alloy, by which its corrosion and wear resistances are greatly improved. The immersion test results show the mass loss of untreated AZ91D Mg is 15 times of that of MAO ones after 21 days immersion test. The electrochemical corrosion experiments show that the corrosion potential of Mg alloy is improved from −1.5786 V to −0.43019 V through MAO surface treatment, the corrosion current is reduced from 0.028703 A/cm² to 2.0456 × 10⁻⁷ A/cm², and the polarization resistance is improved from 1.2753 × 10⁻⁵ Ω/cm² to 0.90886 Ω/cm². The lubricate sliding wear test results show the mass loss of untreated AZ91D Mg is 1.5 times of that of MAO ones.     

Preparation of Cu2ZnSnS4 thin films by sulfurization of stacked metallic layers

Stacked precursors of Cu, Sn, and Zn were fabricated on glass/Mo substrates by electron beam evaporation. Six kinds of precursors with different stacking sequences were prepared by sequential evaporation of Cu, Sn, and Zn with substrate heating. The precursors were sulfurized at temperatures of 560 °C for 2 h in an atmosphere of N₂ + sulfur vapor to fabricate Cu₂ZnSnS₄ (CZTS) thin films for solar cells. The sulfurized films exhibited X-ray diffraction peaks attributable to CZTS. Solar cells using CZTS thin films prepared from six kinds of precursors were fabricated. As a result, the solar cell using a CZTS thin film produced by sulfurization of the Mo/Zn/Cu/Sn precursor exhibited an open-circuit voltage of 478 mV, a short-circuit current of 9.78 mA/cm², a fill factor of 0.38, and a conversion efficiency of 1.79%.     

Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors

In this work, Y₂O₃ was evaluated as a gate insulator for thin film transistors fabricated using an amorphous InGaZnO₄ (a-IGZO) active layer. The properties of Y₂O₃ were examined as a function of various processing parameters including plasma power, chamber gas conditions, and working pressure. The leakage current density for the Y₂O₃ film prepared under the optimum conditions was observed to be ~ 3.5 × 10^− 9 A/cm² at an electric field of 1 MV/cm. The RMS roughness of the Y₂O₃ film was improved from 1.6 nm to 0.8 nm by employing an ALD (Atomic Layer Deposition) HfO₂ underlayer. Using the optimized Y₂O₃ deposition conditions, thin film transistors (TFTs) were fabricated on a glass substrate. The important TFT device parameters of the on/off current ratio, sub-threshold swing, threshold voltage, and electric field mobility were measured to be 7.0 × 10⁷, 0.18 V/dec, 1.1 V, and 3.3 cm²/Vs, respectively. The stacked insulator consisting of Y₂O₃/HfO₂ was highly effective in enhancing the device properties.     

Fabrication of Ta3N5-Ag nanocomposite thin films with high resistivity and near-zero temperature coefficient of resistance

In this study, we investigate as-deposited Ta₃N₅-Ag nanocomposite thin films with near-zero temperature coefficients of resistance (TCRs) that are fabricated by a reactive co-sputtering method; these films can be used in thin-film embedded resistors. In these films, the TCR approaches zero due to compensation between Ag (+TCR) and Ta-N (−TCR) at resistivities higher than 0.005 Ω-cm.Taking into account the fact that Ag counterbalances the resistivity of the Ta₃N₅-Ag thin film, we performed reactive co-sputtering at a nitrogen partial pressure of 55%, corresponding to a resistivity of 0.384 Ω-cm. The resistivity and power density changed, respectively, from 1.333 Ω-cm and 0.44 W/cm² for silver to 0.0059 Ω-cm and 0.94 W/cm² for the Ta₃N₅-Ag thin film. A near-zero TCR of + 34 ppm/K was obtained at 0.94 W/cm² in the Ta₃N₅-Ag thin film without heat treatment.     

Epitaxial growth and properties of cubic Zn0.7Mg0.3O films on TiN-buffered Si(100) substrates by in situ pulsed laser deposition

A novel cubic Zn_0.7Mg_0.3O film on silicon substrate is conducted by KrF excimer pulsed-laser ablation system. By introducing a thin TiN buffer, layer-by-layer growth of cubic Zn_0.7Mg_0.3O film epilayer has been realized. The overall growth process was monitored in situ by reflection high-energy electron diffraction (RHEED) method. It was found that the crystallinity and surface morphology of the Zn_0.7Mg_0.3O films were strongly affected by the TiN buffer layer. The Zn_0.7Mg_0.3O film obtained at an optimal buffer layer exhibited high quality and good surface. For the metal-insulator-metal (MIM) structure of Pt/Zn_0.7Mg_0.3O (200 nm)/TiN (20 nm)/Si (400 μm) prepared at the optimal growth conditions achieved a very low leak current density of ∼10⁻⁶ A cm⁻² at an electric field of 9 × 10⁵ V cm⁻¹ and the permittivity (?_r) of about 8.1, agreed well with that of acquired MgO film and MgO single crystal.     

Bioactivity of zirconia nanotube arrays fabricated by electrochemical anodization

Zirconia nanotubes with a diameter of 50 nm and a length of 20 μm were fabricated by anodic oxidation of zirconium in (NH₄)₂SO₄ electrolyte containing NH₄F. The structure and phase composition of the zirconia nanotube layers were characterized by scanning electron microscopy (SEM), transmission electron microscope (TEM) and X-ray diffraction (XRD). The bioactivity was assessed by investigating the formation of apatite on the surface of zirconia nanotubes after soaking in simulated body fluids (SBF) for 20–30 days. The results indicate that bone-like apatite can be formed on the surface of the zirconia nanotube layers in our SBF immersion experiments. Microstructure of zirconia nanotubes with apatite layer was observed by SEM. Substance and phase compositions were characterized respectively by energy dispersive X-ray spectrometer (EDS) and XRD. Our results show that zirconia nanotube layers fabricated by electrochemical anodization exhibit favorable bioactivity.     

Development of CZTS-based thin film solar cells

The low cost, environmental harmless Cu₂ZnSnS₄ (CZTS)-based thin film solar cells are fabricated by using abundant materials. The CZTS film possesses promising characteristic optical properties; band-gap energy of about 1.5 eV and large absorption coefficient in the order of 10⁴ cm^− 1. All constituents of this CZTS film, which are abundant in the crust of the earth, are non-toxic. Therefore, if we can use CZTS film practically as the absorber of solar cells, we will be free from both of the resource saving problem and the environmental pollution.In our CZTS project, CZTS absorber films were prepared by two independent techniques. One is three rf sources co-sputtering followed by annealing in sulfurized atmosphere. The latest conversion efficiency of over 6.7% was achieved by this technique. The other is co-evaporation technique. CZTS films were grown on Si (100) by vacuum co-evaporation using elemental Cu, Sn, S and binary ZnS as sources. XRD patterns indicated that the polycrystalline growth was suppressed and the orientational growth was relatively induced in a film grown at higher temperatures.In this presentation, the development of CZTS-based thin film solar cells will be surveyed.     

Rapid photokilling of gram-negative Escherichia coli bacteria by platinum dispersed titania nanocomposite films

Superior antimicrobial activity of 2 wt.% Pt-dispersed TiO₂ thin film was observed in photokilling Gram-negative Escherichia coli bacteria within 5 min irradiation (640 μW cm⁻², λ > 340 nm) from UV torch than bare TiO₂ film. Severe disruption of cell membrane has occurred over illuminated Pt-TiO₂ catalysts films coated with 100–300 μg powders per 5 cm² areas over sterilized glass slides. The Pt dispersion onto TiO₂ by impregnation–hydrogen reduction always exhibited better photokilling effect than Pt photodeposition, irrespective of Pt–TiO₂ dose and light exposure time. Similar trend in photoactivity difference between two Pt–TiO₂ catalysts is also observed in aqueous slurry because of the unlike surface structure of TiO₂ due to different annealing temperatures, size and nature of Pt particles dispersion onto TiO₂ photocatalysts.     

Microstructure and electrochemical properties of magnetron-sputtered LiCoO2/LiNiO2 multi-layer thin film electrode

LiCoO₂ single-layer and LiCoO₂/LiNiO₂ multi-layer thin film electrodes were successfully fabricated by magnetron sputtering. Their microstructure and electrochemical properties were investigated. Once annealed, both films had the (0 0 3) preferred orientation to minimize the surface energy. The initial discharge capacity of the multi-layer thin film was approximately 53.1 μAh/cm² μm, which was higher than that of the LiCoO₂ single-layer thin film having similar thickness. The capacity retention of the multi-layer thin film was superior to that of the single-layer thin film. These findings indicate that the multi-layer thin film is a promising cathode material for the fabrication of high-performance thin film batteries.     

Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors

We fabricated an enhancement-mode thin film transistor (TFT) using ZnO as an active channel layer deposited by radio frequency (rf) magnetron sputtering. The NH₃ plasma passivation was performed in order to improve the electrical properties of the ZnO TFTs. We observed that the NH₃ plasma treated ZnO TFTs revealed improved device performances, which include the field effect mobility of 34 cm²/Vs, threshold voltage of 14 V, subthreshold swing of 0.44 V/dec, off-current of 10⁻¹¹ A and on to off ratio higher than 10⁵. These results demonstrate that NH₃ plasma treatment could effectively enhance the performance of the ZnO based TFT device.     

Biopolymer-manganese oxide nanoflake nanocomposite films fabricated by electrostatic layer-by-layer assembly

Bio-nanocomposite films based on chitosan and manganese oxide nanoflake have been fabricated via the layer-by-layer (LBL) self-assembly technique. UV–vis absorption spectra showed that the subsequent growth of the nanocomposite film was regular and highly reproducible from layer to layer. X-ray photoelectron spectroscopy (XPS) spectra confirmed the incorporation of chitosan and manganese oxide nanoflake into the films. Scanning electron microscopy (SEM) images revealed that the nanocomposite film had a continuous surface and a layered structure. A sensitive hydrogen peroxide (H₂O₂) amperometric sensor was fabricated with the chitosan–manganese oxide nanoflake nanocompoite film. The sensor showed a rapid and linear response to H₂O₂ over the range from 2.5 × 10^? 6 to 1.05 × 10^? 3 M, with a sensitivity of 0.038 A M^? 1 cm^? 2.     

Microstructure,mechanical property and corrosion behaviors of interpenetrating C/Mg-Zn-Mn composite fabricated by suction casting

A novel interpenetrating C/Mg-Zn-Mn composite was fabricated by infiltrating Mg-Zn-Mn alloy into porous carbon using suction casting technique. The microstructure, mechanical properties and corrosion behaviors of the composite have been evaluated by means of SEM, XRD, mechanical testing and immersion test. It was shown that the composite had a compact structure and the interfacial bonding between Mg-Zn-Mn alloy and carbon scaffold was very well. The composite had an ultimate compressive strength of (195 ± 15) MPa, which is near with the natural bone (2–180 MPa) and about 150-fold higher than that of the original porous carbon scaffold, and it still retained half of the strength of the bulk Mg-Zn-Mn alloy. The corrosion test indicated that the mass loss percentage of the composite was 52.9% after 30 days′ immersion in simulated body fluid (SBF) at 37 ± 0.5 °C, and the corrosion rates were 0.043 mg/cm²h and 0.028 mg/cm²h after 3 and 7 days′ immersion, respectively. The corrosion products on the composite surface were mainly Mg(OH)₂ and hydroxyapatite (HA).     

Ferroelectric and dielectric properties of Bi4-xNdxTi3O12 thin films prepared by sol–gel method

Bi_4-xNd_xTi₃O₁₂ (BNT-x, x = 0, 0.25, 0.50, 0.75 and 1.0) thin films were prepared on Pt/Ti/SiO₂/Si substrates by a sol–gel method. The microstructure, ferroelectric and dielectric properties of BNT-x thin films were investigated. The single-phase BNT-x thin films were obtained. With increasing Nd content, the preferred orientation changed from random to (117) and surface morphologies changed from the mixture of rod- and plate-like grains to rod-like grains. The Nd substitution improved the ferroelectric and dielectric properties of BTO films. BNT-x films showed better electrical properties at x = 0.50—1.0. BNT-0.75 film exhibited the best electrical properties with remanent polarization (2P _r) of 26.6 μC/cm², dielectric constant (ε _r) of 366 (at 1 MHz), dielectric loss (tanδ) of 0.034 (at 1 MHz), leakage current density (J) of ±3.0 × 10⁻⁶ A/cm² (at ± 5 V) and fatigue-free characteristics.     

Characterization of fluorine-doped silicon dioxide films by Raman spectroscopy and Electron-spin resonance

We have measured Raman and Electron-spin resonance (ESR) spectra of fluorine-doped SiO₂ films deposited by two different methods. In high-density plasma (HDP) films, the Raman band at about 490 cm^− 1 becomes drastically stronger as the F/Si ratio increases, whereas the Raman band from threefold ring defect is independent of the F/Si ratio. The unusual increase of the intensity of the 490 cm^− 1 band in HDP films has been interpreted in terms of the existence of Si-Si clusters. From a comparison between Raman spectra of HDP film and plasma chemical vapor deposition using tetraethoxysilane (p-TEOS) film with the same F/Si ratios it has been found that HDP film has more Si-Si bonds and threefold ring defects than p-TEOS film. Furthermore, the polarized Raman spectra in the 810 cm^− 1 bands indicate that inhomogeneous SiO₂ clusters of various sizes should exist in the network structure of HDP film. The result of the ESR measurement shows that HDP films have fewer dangling bonds than p-TEOS films. It is considered that many Si-Si clusters, threefold ring defects, and inhomogeneous SiO₂ cluster sizes, and the few dangling bonds in HDP films give rise to the film properties of low stress, good adhesion with Si substrate, and low water permeation.     

A new coral structure TiO2/Ti film electrode applied to photoelectrocatalytic degradation of Reactive Brilliant Red

A novel structure TiO₂/Ti film was prepared on a titanium matrix using anodic oxidation technique and applied to degrade Reactive Brilliant Red (RBR) dye in simulative textile effluents. The film was characterized by Field-Emission Scanning Electron Microscope (FE-SEM), Laser Micro-Raman Spectrometer (LMRS), UV–vis spectrophotometer (UVS) and Photoelectrocatalytic (PEC) experiment. The results show that the surface morphology of the film is coral structure, and the crystal structure of the film is anatase. The absorbency of the coral structure TiO₂/Ti film is 87–93% in the UV light region, and 77–87% in the visible light region. PEC experiment indicates that the photocurrent density of the coral structure TiO₂/Ti film electrode achieves 160 μA/cm². The color and Chemical Oxygen Demand (COD) removal efficiencies of RBR achieve 73% and 60% in 1 h, respectively. These are 16% and 58% higher than those of nanotube TiO₂/Ti film electrode. These were attributed to that these electrodes with different surface morphologies exhibit distinct surface areas and light absorption rate.