BJMOSFET 静态特性的解析模型及模拟分析

建立了新型半导体功率器件－双极型压控晶体管（BJMOSFET）的直流解析模型,通过提取模型参数,运用电路模拟软件PSPICE的多瞬态分析法对BJMOSFET的直流特性进行了模拟,分析得出这种新型器件在相同结构参数和同等外界条件下与传统MOSFET相比,电流密度提高30％－40％。     

TiO2/CdSe纳晶复合薄膜电极的光电性能研究

研究了TiO2/CdSe纳晶复合薄膜电极的瞬态光电流、光电流作用谱、光吸收特性,结果表明TiO2/CdSe纳晶复合薄膜电极阻止了CdSe上光生电子和空穴的复合,从而提高了阳极光电流的响应,获得了较高增幅的稳态光电流.     

半导体异质结构材料及其应用

本文概述和评论了异质结构材料的优异性能及其在微电子器件和电路；光电子器件和电路领域的应用，特别强调它们在调制掺杂场效应晶体管，异质结双极晶体管和半导体激光器方面的应用。     

双底栅双壁碳纳米管场效应晶体管的构建和特性研究

构建了以双壁碳纳米管为导电通道、Al2O3和SiO2为绝缘层、Al和Si为栅极、Pd为源和漏电极的双底栅场效应晶体管,测量了晶体管的特性。观测到了双壁碳纳米管的三种典型的输运特性;观测到了两个底栅分别的调制作用;发现两个底栅的调制作用存在着显著的相互影响,使得场效应晶体管的特性明显不同于单栅器件,具备了逻辑“与”门的基本功能;利用能带图分析了双底栅器件的特性。     

宁波材料所在新型双电层薄膜晶体管领域取得新进展

近年来,双栅薄膜晶体管由于其具有可控的阈值电压调节特性,在化学及生物传感器领域引起了广泛的研究兴趣。然而,传统的双栅晶体管都是基于一种典型的三明治结构,半导体沟道被两层栅介质夹在中间,其实质上可以看做是一个底栅晶体管和顶栅晶体管的共用沟道复合晶体管。国际上一些研究小组已经相继报道了双栅晶体管在湿度传感、pH值传感、病毒生物分子     

用光电流法评价铜缓蚀剂

铜电极在Ｎａ２ＨＰＯ４－ＮａＯＨ缓冲溶液（ｐＨ＝１２）中光电流响应呈Ｐ－型，当溶液中含有一定量的ＢＴＡ或ＢＴ２５０时，电位正向扫描过程中电极显示出阳极光电流，即光响应从Ｐ－型转变为ｎ－型，ｎ－型光响应的大小对应于缓蚀作用的大小。因此，可以用光电流法评价缓蚀剂的效果。交流阻抗法测得的结果与光电流法相符。     

我国成功实现8英寸IGBT芯片产业化

科技部网站消息。6月20日，国内首条、世界第二条的8英寸1GBT（绝缘栅双极型晶体管）专业芯片生产线在中国南车株洲电力机车研究所有限公司（以下简称南车株洲所）建成，中国首片8英寸IGBT芯片同时下线。     

适用于液氮温度工作的硅双极晶体管

硅双极晶体管电流增益具有正温度系数，这使得普通硅双极器件电流增益在液氮温度下严重退化，失去了放大能力。本文分析了多晶硅发射极晶体管电流增益的温度相关性，优化设计和选取了发射区掺杂浓度和发射区宽度，成功地研制了液氮温度下电流增益高达２００的硅双极晶体管。     

自由基型光聚合引发剂的最新发展

系统地介绍了近几年来，自由基型光聚合引发剂的发展概况。主要包括水溶型、高分子型、双分子型以及其他新型光聚合引发剂体系的结构类型、光引发机理、适用的光谱范围。     

具有穿通基区的双极晶体管光探测器的噪声特性研究

提出了一种具有穿通基区的Ｓｉ双极晶体管光探测器。通过优化器件结构参数,使基区在工作时完全耗尽,从而得到大的光增益和小的噪声电流。实验测光电转换增益大于１５０,００;器件具有良好的噪声特性,噪声功率与器件的直流偏置电流成正比,即－／ｉｎ＾２＝２ｑＩｃ△ｆ。     

Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process

We compared performances for transistors produced using both wet and dry etching for non-silicide processes in the CMOS technology. It was found that the dry process for non-silicide area induces the threshold voltage shifting of the pMOS transistor as well as increases the contact resistance on active region. Also, GIDL (gate-induced-drain-leakage) current has a poor junction leakage current compared with the wet etching process. Moreover, the dry etching process changes the doping profile of the P⁺ junction and the p-channel transistor region. The experiments showed the dry etching process generates the Si-SiO₂ interface trap site due to plasma-induced damage.     

Photosensitive silicon bipolar negative-differential-resistance device with controlled <Emphasis Type="Italic">I-U</Emphasis> characteristic

A photosensitive negative-differential-resistance (NDR) device has been developed based on two low-power bipolar silicon transistors on a common substrate, with the emitter junction of one transistor shunted by the conducting channel of the other transistor. As the intensity of IR radiation incident on the shunting transistor increases, the peak current in the N-shaped I-U characteristic decreases until it vanishes completely. An increase in the intensity of IR radiation incident on the shunted transistor leads to a significant increase in the peak current.     

Comparison of phase noise simulation techniques on a BJT LC oscillator

The phase noise resulting from white and flicker noise in a bipolar junction transistor (BJT) LC oscillator is investigated. Large signal transient time domain SPICE simulations of phase noise resulting from the random-phase flicker and white noise in a 2 GHz BJT LC oscillator have been performed and demonstrated. The simulation results of this new technique are compared with Eldo RF and Spectre RF based on linear circuit concepts and experimental result reported in the literature.     

Electrical measurement of the junction temperature of an RF powertransistor

An enhanced electrical method is presented for measuring the average junction temperature of an RF bipolar transistor. A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The measurement technique is convenient, since it can be used with normal, packaged devices, and does not require a complex heat flow model or ambient temperature measurements     

Electrical Performance of Electron Irradiated SiGe HBT and Si BJT

The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gain β decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well as /? decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation of β for both SiGe HBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.     

Dopant diffusion and activation induced by sub-melt laser anneal within the co-implanted p+ polycrystalline silicon gate used in CMOS technologies

Due to the continuous CMOS transistor scaling requirements, highly doped shallow junctions with improved activation have been widely investigated in recent CMOS technologies. In this scope, sub-melt millisecond laser annealing has been introduced in the integration flows to enhance dopant activation, without any additional detrimental diffusion. This MSA step impacts not only the transistor junction properties, but also the polysilicon gate depletion. This paper is devoted to the study of the MSA influence on boron and germanium co-implanted polysilicon films. A sensitive boron diffusion occurring during the laser anneal step, with or without an initial spike annealing step, has been observed. The activation energy of the boron diffusivity extracted from SIMS profiles in the laser only sequence has been found equal to 4.05 eV. In addition, it was shown that either a high temperature laser anneal sequence or a spike anneal followed by a laser anneal sequence can reach the same activation levels.     

A model for phase noise generation in amplifiers

In this paper, a model is presented for predicting the phase modulation (PM) and amplitude modulation (AM) noise in bipolar junction transistor (BJT) amplifiers. The model correctly predicts the dependence of phase noise on the signal frequency (at a particular carrier offset frequency), explains the noise shaping of the phase noise about the signal frequency, and shows the functional dependence on the transistor parameters and the circuit parameters. Experimental studies on common emitter (CE) amplifiers have been used to validate the PM noise model at carrier frequencies between 10 and 100 MHz     

Lifetime prediction model for electric vehicle IGBT modules under driving conditions

In order to study the effect of road conditions and electric vehicle (EV) running speed on useful lifespan, a model for predicting the lifespans of insulated gate bipolar transistor (IGBT) modules of EVs is proposed. The life cycle prediction model was formulated according to an analysis of the working state, power loss, and junction temperature fluctuation of IGBT modules under driving conditions and was implemented using MATLAB software. Then, the lifetime prediction model was used to calculate the life mileage of an EV under the New European Driving Cycle (NEDC); the results predict a life mileage of 182.98 km. The simulation results of junction temperatures under the NEDC conditions indicate that the acceleration process of EVs has a substantial influence on the lifetime of IGBT modules. The lifetime prediction model was also used to analyze the relationship between the speed of EVs and the lifetime of IGBT modules. The IGBT modules have a maximum life mileage at a constant speed of 70 km/h; life mileage declines gradually as the speed increases or decreases. This lifetime prediction model can be used to predict lifetime of EV IGBT modules under driving conditions and analyze the effect of driving conditions on lifespan effectively.     

The Use of Time-Domain Techniques for Microwave Transistor s-Parameter Measurements

The determination of microwave transistor s parameters over a frequency band up to 10 GHz by means of timedomain techniques, involving Fourier analysis and deconvolution of transient response data, is described. Details of the measurement system are presented and advantages of such techniques over conventional network analyzer techniques are discussed. Results obtained for developmental ion-implanted/diffused-silicon bipolar transistors with ft values above 5 GHz are presented.