共查询到20条相似文献,搜索用时 564 毫秒
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Eric Daniel Głowacki Mihai Irimia‐Vladu Martin Kaltenbrunner Jacek Gsiorowski Matthew S. White Uwe Monkowius Giuseppe Romanazzi Gian Paolo Suranna Piero Mastrorilli Tsuyoshi Sekitani Siegfried Bauer Takao Someya Luisa Torsi Niyazi Serdar Sariciftci 《Advanced materials (Deerfield Beach, Fla.)》2013,25(11):1563-1569
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Field‐Effect Transistors: High Performance Polymer Nanowire Field‐Effect Transistors with Distinct Molecular Orientations (Adv. Mater. 34/2015) 下载免费PDF全文
Chengyi Xiao Guangyao Zhao Andong Zhang Wei Jiang René A. J. Janssen Weiwei Li Wenping Hu Zhaohui Wang 《Advanced materials (Deerfield Beach, Fla.)》2015,27(34):4949-4949
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H. Sirringhaus 《Advanced materials (Deerfield Beach, Fla.)》2005,17(20):2411-2425
Field‐effect transistors based on solution‐processible organic semiconductors have experienced impressive improvements in both performance and reliability in recent years, and printing‐based manufacturing processes for integrated transistor circuits are being developed to realize low‐cost, large‐area electronic products on flexible substrates. This article reviews the materials, charge‐transport, and device physics of solution‐processed organic field‐effect transistors, focusing in particular on the physics of the active semiconductor/dielectric interface. Issues such as the relationship between microstructure and charge transport, the critical role of the gate dielectric, the influence of polaronic relaxation and disorder effects on charge transport, charge‐injection mechanisms, and the current understanding of mechanisms for charge trapping are reviewed. Many interesting questions on how the molecular and electronic structures and the presence of defects at organic/organic heterointerfaces influence the device performance and stability remain to be explored. 相似文献
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Organic Field‐Effect Transistors: The Origin of Excellent Gate‐Bias Stress Stability in Organic Field‐Effect Transistors Employing Fluorinated‐Polymer Gate Dielectrics (Adv. Mater. 42/2014) 下载免费PDF全文
Jiye Kim Jaeyoung Jang Kyunghun Kim Haekyoung Kim Se Hyun Kim Chan Eon Park 《Advanced materials (Deerfield Beach, Fla.)》2014,26(42):7280-7280
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Intramolecular Locked Dithioalkylbithiophene‐Based Semiconductors for High‐Performance Organic Field‐Effect Transistors 下载免费PDF全文
Sureshraju Vegiraju Bo‐Chin Chang Pragya Priyanka Deng‐Yi Huang Kuan‐Yi Wu Long‐Huan Li Wei‐Chieh Chang Yi‐Yo Lai Shao‐Huan Hong Bo‐Chun Yu Chien‐Lung Wang Wen‐Jung Chang Cheng‐Liang Liu Ming‐Chou Chen Antonio Facchetti 《Advanced materials (Deerfield Beach, Fla.)》2017,29(35)
New 3,3′‐dithioalkyl‐2,2′‐bithiophene ( SBT )‐based small molecular and polymeric semiconductors are synthesized by end‐capping or copolymerization with dithienothiophen‐2‐yl units. Single‐crystal, molecular orbital computations, and optical/electrochemical data indicate that the SBT core is completely planar, likely via S(alkyl)?S(thiophene) intramolecular locks. Therefore, compared to semiconductors based on the conventional 3,3′‐dialkyl‐2,2′‐bithiophene, the resulting SBT systems are planar (torsional angle <1°) and highly π‐conjugated. Charge transport is investigated for solution‐sheared films in field‐effect transistors demonstrating that SBT can enable good semiconducting materials with hole mobilities ranging from ≈0.03 to 1.7 cm2 V?1 s?1. Transport difference within this family is rationalized by film morphology, as accessed by grazing incidence X‐ray diffraction experiments. 相似文献
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Eric Daniel Głowacki Mihai Irimia‐Vladu Martin Kaltenbrunner Jacek Ga̧siorowski Matthew S. White Uwe Monkowius Giuseppe Romanazzi Gian Paolo Suranna Piero Mastrorilli Tsuyoshi Sekitani Siegfried Bauer Takao Someya Luisa Torsi Niyazi Serdar Sariciftci 《Advanced materials (Deerfield Beach, Fla.)》2013,25(11):1513-1513
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