氮化硅介质薄膜内应力的实验研究

研究了等离子体增强化学气相沉积氮化硅介质薄膜的内应力。采用钠光平面干涉测量了氮化硅薄膜内应力,通过改变薄膜沉积时的工艺参数,考察了反应气体流量比、沉积温度、射频功率密度等因素对氮化硅薄膜内应力的影响。在此基础上,对氮化硅介质薄膜本征应力的形成机制进行了分析讨论。     

有机发光器件的低温氮化硅薄膜封装

利用等离子体化学气相沉积(PECVD)技术，采用不同的沉积条件(20—180℃的基板温度范围和10—30W的射频功率)制备了氮化硅薄膜，研究了沉积条件对氮化硅薄膜性质和防水性能的影响。实验发现随着基板温度的增加，氮化硅薄膜的密度、折射率和Si／N比相应增加，而沉积速率和H含量相应减少；随着射频功率的增加，氮化硅薄膜的沉积速率、密度、折射率和Si／N比相应增加，而H含量相应减少。水汽渗透实验发现即使基板温度降低为50℃，所沉积的氮化硅薄膜仍然具有良好的防水性能。实验结果表明低温氮化硅薄膜可以有效地应用于有机发光器件（OLED)的封装。     

氮化硅介质薄膜内应力的实验研究

研究了等离子体增强化学气相沉积氮化硅介质薄膜的内应力。采用钠光平面干涉测量了氮化硅薄膜内应力,通过改变薄膜沉积时的工艺参数,考察了反应气体流量化、沉积温度、射频功率密度等因素对氮化硅薄膜内应力的影响。在此基础上,对氮化硅介质薄膜本征应力的形成机制进行了分析讨论。     

RF-PECVD法在钢衬底上沉积氮化硅薄膜的研究

采用射频等离子体增强化学气相沉积法(RF-PECVD)在钢衬底上沉积氮化硅薄膜.用台阶仪、X射线光电子能谱(XPS)、透射电镜(TEM)和扫描电镜(SEM)等手段对薄膜的厚度、成分、结构及形貌进行表征,并探讨了各工艺参数对薄膜沉积速率的影响.     

等离子增强型化学气相沉积条件对氮化硅薄膜性能的影响

等离子增强型化学气相沉积(PECVD)氮化硅技术是目前半导体器件在合金化后低温生长氮化硅的唯一方法.研究了由进口PECVD设备制备的氮化硅薄膜性质与沉积条件的关系,测定了生成膜的各种物理化学性能,详细探讨了各种沉积参数对薄膜性能的影响,提出了沉积优质氮化硅薄膜的工艺条件.     

基于数字模拟的PECVD沉积氮化硅薄膜的工艺参数决策方法研究

提出了基于数字模拟的等离子体增强化学气相沉积(PECVD)沉积氮化硅薄膜的工艺参数决策方法。氮化硅薄膜的主要影响因子和质量特性参数通过领域知识和专家意见先期获得,通过单因素物理试验获得工艺参数和质量特性参数之间的关系,通过数字模拟的正交试验获得最佳的工艺参数。考虑到PECVD沉积氮化硅薄膜实验所需的时间和费用,基于数字模拟的PECVD沉积氮化硅薄膜的工艺参数决策方法可以在数据离散化、领域知识不充分的环境中高效经济地进行工艺参数的优化选择。     

高纯硅烷的制取

一、前言 硅烷是发展电子工业所必需的特种气体之一，它广泛应用于集成电路和半导体器件中的掩膜工艺(沉积二氧化硅薄膜，氮化硅薄膜、磷硅玻璃等)、钝化工艺(淀积氮化硅薄膜)和介质隔离工艺(生长多晶硅栅等)。在微波器件中，进一步结合外延技术，用硅烷热分解制得同质外延片和异质外延片，为微波器件提供了新型的基片。最近又发展了把硅烷作为砷化镓微波器件的离子注入源和激光器的介质，以及光纤通讯纤维的原料。     

ECR-CVD方法生长a-SiNx:H薄膜的研究

使用微波电子回旋共振等离子体化学气相沉积(ECR-CVD)方法室温生长了非晶氢化的氮化硅薄膜,通过改变前驱气体(SiH4 80%Ar和NH3)的流量比,研究了薄膜的生长速率、等离子体的发射光谱和薄膜的红外特性.结果表明:随着NH3流量的增加,氮化硅薄膜的生长速率呈下降趋势,这主要是由于等离子体中的气相前驱成分之一硅基团浓度的不断下降所导致的;随着NH3流量的增加,薄膜中键合了较多的具有较高电负性的N原子是Si-N和Si-H伸缩振动发生蓝移的主要原因.红外光谱的定量计算表明所制备的氮化硅薄膜具有相对较低的H浓度,约15%左右.文中对氮化硅薄膜的生长机制也进行了讨论.     

TiO_2磁控溅射工艺参数对薄膜沉积速率的影响

为了经济、有效、准确地在线测量光学薄膜厚度,采用射频磁控反应溅射法在玻璃衬底上制备TiO2薄膜。用自制的简易监测系统对TiO2薄膜在生长过程中的沉积速率进行了即时测量,研究了射频功率、气体流量、工作气压等工艺参数对TiO2薄膜沉积速率的影响规律。结果表明:沉积速率监测系统对膜厚变化反应灵敏,能够实时监测薄膜生长速率;溅射过程中,射频功率、氧氩流量比和工作气压对薄膜沉积速率有较大的影响,射频功率从120 W增加到240 W,薄膜沉积速率增加;氧气流量从1 mL/min增加到5 mL/min,薄膜沉积速率先逐渐增大后减小,存在一个临界点;工作气压从0.3 Pa增加到0.8 Pa,薄膜沉积速率缓慢增加,但临界点后迅速下降。     

ICP-CVD设备低温制备低应力氮化硅薄膜工艺的探索北大核心CSCD

制备低应力的氮化硅薄膜是微机械系统和集成电路中非常重要的工艺。在温度不高于80℃的条件下,采用ICP-CVD设备,利用硅烷和氮气作为前驱体沉积氮化硅介质薄膜。研究了沉积温度、ICP功率、硅烷与氮气流量比例、工作气压等因素对氮化硅薄膜应力的影响,并利用相关的理论合理解释了应力随不同工艺参数变化的原因。根据研究结果,我们优化了氮化硅薄膜沉积的工艺参数,在70℃低温条件下,制备出厚度160 nm,应力0.03 MPa的低应力氮化硅介质薄膜。     

中频孪生靶非平衡磁控溅射制备氮化硅薄膜及其性能(英文)

本文采用中频孪生靶非平衡磁控溅射技术在不同氮气流量比例的条件下制备出氮化硅薄膜。利用傅里叶变换红外光谱仪(FTIR)、X射线衍射仪(XRD)、原子力显微镜(AFM)、椭偏仪等研究了氮气流量比率对氮化硅薄膜的微观结构、表面形貌、沉积速率、折射率的影响。结果表明:中频孪生非平衡磁控溅射技术制备的薄膜为非晶态氮化硅。随着氮气流量比率的增加,Si-N键红外光谱吸收带向低波数漂移,薄膜的沉积速率降低,表面结构更为光滑致密,氮化硅薄膜的折射率降低。薄膜的硬度和杨氏模量分别达到22和220GPa左右。     

超薄磁盘保护膜的制备技术

类金刚石薄膜和氮化硅薄膜都是性能很好的绝缘材料,可以用于对磁盘进行保护,在本文中主要讨论了它们各自的制备方法.随着巨磁阻读写磁头(giant magneto-resistive heads)技术的引入,磁盘的存储密度以每年100%的速度在增加,这就要求磁盘保护膜的厚度要尽量的小,所以对制备方法有一定的要求.对类金刚石磁盘保护膜,可以使用等离子体磁控溅射沉积、磁过滤阴极弧沉积、等离子体化学气相沉积来制备;对氮化硅磁盘保护膜,可以使用射频反应溅射沉积来制备.     

An examination of the reactive sputtering of silicon nitride on to gallium arsenide

The deposition of silicon nitride thin films by the reactive sputtering of elemental silicon in a nitrogen/argon plasma has been investigated. The composition of the thin films has been examined using infra-red reflectance, X-ray photoelectron and Auger electron spectroscopies and spark source mass spectrometry. Oxygen has been found to be a major contaminant in these sputter deposited films, the oxygen concentration depending on the ambient gas pressure. The use of the silicon oxy-nitride films as annealing encapsulants for the activation of silicon ion implanted semi-insulating gallium arsenide has also been investigated.     

Deposition of silicon films in presence of nitrogen plasma—A feasibility study

A design, development and validation work of plasma based ‘activated reactive evaporation (ARE) system’ is implemented for the deposition of the silicon films in presence of nitrogen plasma on substrate maintained at room temperature. This plasma based deposition system involves evaporation of pure silicon by e-beam gun in presence of nitrogen plasma, excited by inductively coupled RF source (13.56 MHz). The activated silicon reacts with the ionized nitrogen and the films get deposited on silicon substrate. Different physical and process related parameters are changed. The grown films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and ellipsometry. The results indicate that the film contains silicon nitride and a phase of silicon oxy nitride deposited even at room temperature. This shows the feasibility of using the ARE technique for the deposition of silicon films in nitrogen plasma.     

Spectroscopic ellipsometry characterization of SiNx antireflection films on textured multicrystalline and monocrystalline silicon solar cells

We present a spectroscopic ellipsometry study of silicon nitride based antireflection films deposited on chemically textured multi- and monocrystalline silicon wafers. The ellipsometric parameters were measured from the near infrared to the ultra violet spectral region. We report the effective thickness and complex index of refraction parameters of the antireflection films from all studied surfaces, regardless of their microscopic morphology. We report on a method to make ellipsometric measurements of the effective optical constants and thickness parameters of thin films deposited on alkaline etched (100)-oriented monocrystalline silicon. The effect of the texture on the complex index of refraction can be described within an effective medium approximation approach. The optical properties are consistent with those obtained from a series of reference films deposited on flat silicon surfaces.     

BN薄膜的制备及BPXN1-X薄膜的紫外光敏特性

采用热丝和射频等离子体辅助化学气相沉积方法(HF-PECVD),以单晶硅为衬底在低温(< 500℃)条件下沉积氮化硼(BN)薄膜材料.通过傅立叶变换红外光谱(FTIR)、 X射线衍射(XRD)及扫描电镜(SEM)对薄膜样品的组成和结构进行了分析,探讨了温度和等离子体对沉积BN薄膜的影响.此外,用紫外-可见光分光光度计(UV)测试了石英衬底上生长磷掺杂氮化硼(BPXN1-X)薄膜样品的紫外吸收特征,分析了磷掺杂对 BN光学能隙的调节作用以及 BPXN1-X薄膜在紫外空间探测领域的应用前景.结果表明,以单晶硅和光学石英玻璃为衬底在低温条件下用 HF-PECVD方法可以沉积较高质量的 BN薄膜,BN的光学能隙宽度通过磷的掺杂可以得到连续调节,在紫外空间光探测领域具有很大的应用潜力.     

Hydrogen dependent surface morphology study of plasma deposited SiN(x):H films for two gas systems SiH4/NH3 and SiH4/N2

Partially amorphous silicon nitride thin films were deposited using plasma enhanced chemical vapor deposition technique using the two gas systems: SiH4/NH3 and SiH4/N2. Fourier Transform infrared spectroscopy was employed to derive the relative changes in the bonded hydrogen content with increasing flow rates of NH3 and N2. Surface morphology was monitored using atomic force microscopy. Root mean square surface roughness was found to be dependent on the NH3 and N2 flow rates, unlike silicon nitride films deposited by rf magnetron sputtering with variation in (N2/Ar) (Li et al. Thin Solid Films 334 (1998) 140). The discrepancy has been explained in the light of bonded hydrogen content in these films. The X-ray diffraction technique has also been used to observe the phases of the nitride films which showed the presence of silicon nitride grains oriented in (200), (400) and (221) directions in the predominantly amorphous as-deposited SiN(x):H films.     

Sputter deposition of silicon oxynitride gradient and multilayer coatings

The optical properties of silicon oxynitride films deposited by reactive dc magnetron sputtered films have been investigated. In particular the absorption characteristics of silicon nitride thin films in the visible spectrum and their optical bandgap were analyzed with regard to their composition and deposition properties. It can be shown that there is a significant difference between the absorption in the visible spectrum and the optical bandgap for these layers. The influence of unipolar and bipolar pulse modes on the optical layer properties is presented. The extinction coefficient for silicon nitride single layers could be reduced to a value of 2 x 10(-4) at 500 nm without external heating. There is also the dependence of the absorption of silicon oxynitride layers on the discharge voltage. We present the resulting spectra of rugate and edge filters that consist of these layers and offer lower absorption than single layers.     

Tribological properties of Cr-Si-N nanocomposite film adherent silicon under various environments

Chromium nitride thin films have good corrosion resistance and mechanical properties. However, their hardness is slightly lower than that of other hard coatings. The concept of nanocomposite thin films is employed by adding silicon to form Cr-Si-N thin films with enhanced hardness and wear resistance. In this study, Cr-Si-N films with various Si contents were coated on silicon wafer to enhance the tribological properties and anticorrosion by a bipolar symmetry pulsed DC reactive magnetron sputtering process. The tribological properties were studied by a pin-on-disk tester. The tests were conducted with the same operating condition under three different environments. They were performed in the ambient atmosphere (in 55% humid air), DI water, and 0.01 M NaCl aqueous solution, respectively. The wear tests revealed that, as the silicon content was increased, even though the Cr-Si-N films had a better anticorrosion property they had an inferior performance on wear resistance. The results were concluded to be mainly due to Cr-Si-N films’ microstructures and adhesion to the Si substrate rather than their hardness and toughness.