双基片垂直沉降法自组装二氧化硅胶体晶体

采用St(o)ber法制备了适于自组装的单分散性的SiO2球体颗粒,再采用双基片垂直沉积法在无水乙醇中制备出SiO2胶体晶体.通过X射线衍射仪和场发射扫描电子显微镜(SEM)对胶体晶体的晶型和显微形貌进行测试分析.结果表明:所得SiO2球体颗粒为无定形态,粒径为70～380nm,粒径随着氨水浓度的增大而增大;随着双基片间距增大,胶体晶体周期性排列越紧密有序,相同基片间距下,双尺寸胶体晶体更难以获得.     

二氧化硅胶体球的制备、改性及其胶体晶体的组装

采用改进的St(O)ber法制备了单分散性较好、表面光滑的SiO2球形颗粒,将丁二酸化学键合于SiO2胶体球表面以提高其Zeta电势,再采用垂直沉积法在水溶液中制备出SiO2胶体晶体.通过X射线衍射仪、场发射扫描电子显微镜(SEM)和Zeta电位粒度仪对颗粒和胶体晶体的晶型、显微形貌、电学性能进行测试分析.结果表明:所...     

光子晶体用二氧化硅胶体球的改性制备及其自组装

采用一步法制备了表面接枝甲基丙烯酰氧基三甲氧基硅烷(MPS)的单分散SiO2胶体球,并通过垂直沉积法在40℃、60%相对湿度下组装出有序性较好的密排结构的SiO2光子晶体.傅立叶红外光谱(FT-IR)和X射线光电子能谱(XPS)结果证明SiO2胶体球表面接枝上了MPS;扫描电子显微镜(SEM)结果表明改性后SiO2胶体球平均粒径为284nm,单分散性较高,平均标准偏差＜5%;制备出的光子晶体是面心立方(fcc)紧密堆积结构;吸收光谱表明,所制备的光子晶体在(111)方向具有光子晶体的带隙特性,带隙中心波长为646nm.     

离心法制备高质量三维胶体晶体的研究

采用无皂乳液聚合合成了单分散的聚甲基丙烯酸甲酯(PMMA)球形颗粒,运用离心法制备出高度有序的三维胶体晶体。实验分别考察了粒子种类和转速等因素对胶体晶体结构的影响,并利用扫描电子显微镜(SEM)进行形貌表征分析。结果表明:离心法能制备出大尺寸三维胶体晶体(约1.5cm2×0.4cm),颗粒呈现面心立方堆积,周期短,制备的晶体硬度大。在相同实验条件下,SiO2组装耗时较PMMA短。制备高质量胶体晶体存在最佳转速,对于230nm的PMMA胶体悬浮液,在2000r/min时,得到的胶体晶体质量最高。     

单分散SiO_2胶体光子晶体的自组装制备与表征(英文)

使用Stber法化学合成了粒径在200-350nm之间的单分散SiO2,采用垂直沉积技术自组装制备了胶体晶体薄膜。通过扫描电镜与分光光度计对样品的微观结构与透过光谱进行了表征,结果表明,组成胶体晶体的SiO2微球呈面心立方结构,膜层的厚度可以通过胶体溶液的浓度加以控制,胶体膜层透射光谱中出现的峰值位置取决于SiO2微球的大小,并且与布拉格定律理论计算的结果相一致,透射光谱中光学阻带的深度可以通过改变胶体悬浮液中SiO2颗粒的体积分数来调控。     

CdSe-SiO2光子晶体的垂直沉积及近红外变频特性

在氧化铟锡玻璃上电化学合成了CdSe薄膜,采用垂直沉积法首次在CdSe薄膜上制备了SiO2胶体晶体, 实现了CdSe表面介电常数的调节.扫描电镜观察表明,500nm微球在CdSe薄膜上呈面心立方密堆结构排列,在微米尺度上胶体晶体显示出一定的多晶序.与SiO2胶体晶体相比,CdSe-SiO2光子晶体的UV-vis-NIR透射谱只有一个较宽的光子带隙,带隙在近红外波段随入射角减小向短波方向移动.所得CdSe-SiO2光子晶体样品可作为地面目标针对红外卫星成像的伪装材料.     

单分散SiO2微球的合成及胶体晶体的生长

对传统的"Stober-Fink"合成SiO2微球的工艺进行了改进,运用"籽晶生长法"合成了单分散SiO2微球,该法可以准确地控制微球尺寸,提高微球的球形度.采用垂直沉积法制备了胶体晶体,并对样品的结构和光学性能进行了表征.研究了微球尺寸对垂直沉积SiO2胶体晶体光子带隙的影响,结果表明,通过控制微球粒径,可调节光子晶体的带隙位置.     

单分散SiO2胶体球制备及其胶体晶体组装

运用胶体化学法在乙醇介质中合成SiO2胶体球,将制得的样品在30℃下用双氧水浸泡处理48h.用扫描电子显微镜(SEM)、傅立叶红外光谱(FT-TR)、Zeta电位仪和标准氢氧化钠滴定法对其形貌、结构和表面电学性质进行分析.结果表明样品平均粒径为292nm,平均标准偏差小于5%;经双氧水浸泡处理后,SiO2胶体球表面羟基数目增多,在水溶液中的Zeta电位从-55.72mV提高到-63.26mV,表面电荷密度从0.19μC/cm2提高到0.28μC/cm2.通过垂直沉积法,在40℃和60%相对湿度条件下制备出有序性较好、密排结构的SiO2胶体晶体.在SEM下,观察到这种胶体晶体是面心立方(fcc)密排结构,其(111)晶面平行于基底.透射光谱表明,所制备的胶体晶体在(111)方向具有光子晶体的不完全带隙性质.     

SiO2胶体晶体的自组装结构及其带隙特征

光子晶体是一种具有光子带隙的新型功能材料.利用垂直沉积自组装法制成SiO2胶体晶体,并利用扫描电子显微镜和紫外分光度计对胶体晶体的显微形貌和光学特征进行了研究.结果表明,利用垂直沉积法自组装得到的SiO2胶体晶体具有面心立方结构;在可见光波段,胶体晶体在＜111＞面方向存在光子带隙.     

漂浮法制备高质量胶体晶体

采用漂浮自组装法制备出三维胶体晶体,并通过扫描电子显微镜对胶体晶体进行表征,观察并分析胶体晶体的形貌和结构。实验分别考察了各种因素(粒子种类、颗粒粒径、温度及固含量)对胶体晶体的形貌和结构的影响。结果表明,用漂浮法制得的聚苯乙烯(PS)胶体晶体比相同条件下SiO2胶体晶体排列更加有序,该法的最佳适用粒径为150 nm～500 nm,在特定温度(60℃～90℃)和固含量范围内均能在气液界面处自组装出大面积的三维有序胶体晶体。     

Thermal degradation kinetics and morphology of natural rubber/silica nanocomposites

A novel natural rubber/silica (NR/SiO2) nanocomposite with a SiO2 loading of 4 wt% is developed by incorporating latex compounding with self-assembly techniques. The SiO2 nanoparticles are homogenously distributed throughout the NR matrix as spherical nano-clusters with an average size of 75 nm. In comparison with the host NR, the thermal resistance of the nanocomposite is significantly improved. The degradation temperatures (T), reaction activation energy (E), and reaction order (n) of the nanocomposite are markedly higher than those of the pure NR, due to significant retardant effect of the SiO2 nanoparticles.     

氧化石墨烯核-壳杂化粒子/硅橡胶介电弹性体复合材料的制备与性能

采用阳离子聚电解质聚二烯丙基二甲基氯化铵(PDDA)改性SiO₂, 再通过静电自组装制备了SiO₂-PDDA-氧化石墨烯(GO)核-壳杂化粒子。采用溶液共混法将SiO₂-PDDA-GO引入到高温硫化硅橡胶(SR)中, 制备了SiO₂-PDDA-GO/SR介电弹性体复合材料。结果表明:该方法能实现GO在SiO₂表面大面积的包覆, 解决了GO容易自聚集的问题, 且PDDA具有还原GO的作用, 无需再对GO核-壳杂化粒子/SR复合材料进行原位热还原, 简化了实验方案, 节能环保。SiO₂-PDDA-GO填充量为60wt% 时, 在100 Hz频率下, SiO₂-PDDA-GO/SR介电弹性体复合材料的介电常数为21.53, 是SR的11.6倍, 介电损耗保持较低值, 同时, 复合材料的模量保持在较低水平。在电场强度为2.48 kV/mm时, 60wt%的SiO₂-PDDA-GO/SR介电弹性体复合材料横向电致形变在同一电场强度下与SR相比增加了15倍。      

Layer-by-layer self-assembly of multilayer zirconia nanoparticles on silica spheres for HPLC packings

A novel zirconia-based HPLC packing material, ZrO2/SiO2, which consists of micrometer-sized silica spheres as core and nanometer-sized zirconia particles as surface coating, was prepared by a layer-by-layer self-assembly technique. The material exhibits favorable characteristics for HPLC applications, including high surface area and pore volume, good pore structure, narrow particle size, and pore size distribution. Not only the support ZrO2/SiO2 but also the stationary-phase C18 bonded ZrO2/SiO2 exhibits excellent chemical stability. In addition, good permeability was observed for both of them. High specific area surface and good permeability of ZrO2/SiO2 permit a high loading amount of chiral polymer on it and greatly improved the enantioselectivity and resolution for some chiral separations.     

Au／SiO2复合纳米颗粒膜及SiO2纳米线的制备

室温下用磁控溅射法在Si（111）衬底上生成Au／SiO2复合纳米颗粒膜，并分不同温度进行退火处理。1000℃退火时自组装生成空间分布均匀（直径约为70nm）的Au纳米点，从而用自组装生长方法制备了生长一维纳米材料的模板，然后，将Au催化剂模板在1100℃下退火处理，生成纳米线，SEM和TEM测试，制备的SiO2纳米线直径约为100nm，长度约为4μm，表面光滑，直且粗细均匀。     

Selective area atomic layer deposited ZnO nanodot on self-assembled monolayer pattern using a diblock copolymer nano-template

ZnO nanodots were prepared by selective area atomic layer deposition (SA-ALD) on an octadecyltrichlorosilane (ODTS) self-assembly monolayers (SAMs) patterns formed using a diblock co-polymer (DBC) nanotemplate. In order to transfer well-ordered nanaotemplate in SAMs, SiO2 sacrificial layer was inserted between DBC and SAMs. Cylindrical nanoholes under 16 nm diameters were well-formed on SiO2 layer. SA-ALD of ZnO was successfully performed on by ODTS SAMs.     

静电自组装制备复合磨粒及其 对铜的抛光特性研究

研究苯代三聚氰胺甲醛（BGF）微球与阳离子型聚电解质聚二烯丙基二甲基氯化铵（PDADMAC）、阴离子型聚电解质聚4－苯乙烯璜酸钠（PSS）之间的吸附特性,利用静电自组装技术改变和控制BGF微球的荷电特性,制备出不同形式的PEi BGF/SiO2复合磨粒,以Zeta电位、透射电子显微镜（TEM）和热重分析（TG）等手段对复合磨粒进行了表征,并利用这些复合磨粒制备了铜片抛光用的复合磨粒抛光液。抛光试验表明,吸附在聚合物微球表面和游离于抛光液中的SiO2磨粒在抛光中均起到材料去除作用。传统单一SiO2磨粒抛光液的铜材料去除率为264 nm/min,PE0 BGF/SiO2混合磨粒抛光液的铜材料去除率为348 nm/min,PE3 BGF/SiO2复合磨粒抛光液的铜材料去除率为476 nm/min。经上述3种抛光液抛光后的铜表面,在5 μm×5 μm范围内,表面粗糙度Ra从0.166 μm分别降至3.7 nm、2.6 nm和1.5 nm,峰谷值Rpv分别小于20 nm、14 nm和10 nm,复合磨粒抛光液对铜片有良好的抛光性能。     

Formation of nanoparticle arrays on S-layer protein lattices

Crystalline bacterial cell surface layers (S-layers) composed of identical protein units have been used as binding templates for well-organized arrangements of nanoparticles. Isolated S-layer proteins were recrystallized into monomolecular arrays on solid substrates (such as silicon wafers and SiO2-coated grids) and in suspension forming so-called self-assembly products. These S-layer assemblies were studied by atomic force microscopy and transmission electron microscopy (TEM). The orientation of the S-layer lattice, exhibiting anisotropic surface properties, on the solid surface and on the self-assembly products, was compared with the orientation on the bacterial cell. On both bacterial cells and SiO2 surfaces the outer face of the S-layer protein was exposed. On the self-assembly products occasionally the inner face was also visible. Metal- and semiconductor nanoparticles 2 to 10 nm in mean diameter were covalently or electrostatically bound to the solid-supported S-layers and self-assembly products. TEM studies reveal that upon activation of carboxyl groups in the S-layer lattice with 1-ethyl-3,3'(dimethylaminopropyl)carbodiimide (EDC), a close-packed monolayer of 4-nm amino-functionalized CdSe nanoparticles could be covalently established on the S-layer lattice. Because of electrostatic interactions, anionic citrate-stabilized Au nanoparticles (5 nm in diameter) formed a superlattice at those sites where the inner face of the S-layer lattice was exposed. In contrast, cationic semiconductor nanoparticles (such as amino-functionalized CdSe particles) formed arrays on the outer face of the solid-supported S-layer lattices.     

A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates

Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.     

Organic field-effect transistors containing a SiO2 nanoparticle thin film as the gate dielectric

In this article, we report the fabrication of organic field-effect transistors using self-assembled SiO2 as a gate dielectric material and pentacene as a semiconductor. The dielectric layer was self-assembled with 10 layers of SiO2 nanoparticles 45 nm in diameter, and its breakdown field was larger than 0.57 MV/cm. Being a low-cost and low-temperature process, the layer-by-layer self-assembly is particularly suitable for organic field-effect transistor fabrication. The pentacene was thermally evaporated on the substrate under high vacuum at the room temperature. The fabricated transistor has a threshold voltage of 0.3 V, field-effect mobility of 0.05 cm2/Vs, and slope of 1.4 V/decade.     

Template guided self-assembling two-dimensional array of Au@SiO2 core-shell nanoparticles for room-temperature single electron transistors

The composite nanoparticles of a gold core capped by a SiO2 shell with well-controlled thickness have been synthesized and fabricated into two-dimensional array on silicon surface by a simple self-assembly method combined with an AFM nanolithography technique. Current-voltage measurements of the Au@SiO2 composite nanoparticles (shell thickness of 6 nm) show a well-pronounced Coulomb staircase with a period of 300 mV at room temperature, demonstrating single electron transistor behavior. The step width of the Coulomb staircase can be tuned by controlling the thickness of SiO2 shell. The tunable single electron tunneling properties make the 2D array of Au@SiO2 composite nanoparticles an ideal candidate for planar single electron transistor devices.