硅太阳能电池的环境问题与新型太阳能电池研发的必要性

如今太阳能电池的应用越来越广泛,简单可分为单晶硅太阳能电池、多晶硅太阳能电池、非晶硅太阳能电池以及多元化合物太阳能电池,其中晶体硅太阳能电池最为常见。但是在晶体硅太阳能电池产生的过程当中,产生了许多对环境不友好的污染物,例如含氟废水,四氯化硅。所以,研究新型的环境友好型太阳能电池是十分有意义的。     

光伏企业质量管理刍议

黄河光伏,是一个高新技术企业,致力于太阳能光伏技术产品的研究、开发、生产、销售及工程应用。拥有全套、先进的晶体硅太阳能电池生产技术和设备,生产各种规格、高效率的晶硅太阳能电池片、电池组件等。面对国内外一流的用户,企业如何以质取胜,本文就此进行了探讨。     

光伏企业质量管理刍议

黄河光伏,是一个高新技术企业,致力于太阳能光伏技术产品的研究、开发、生产、销售及工程应用。拥有全套、先进的晶体硅太阳能电池生产技术和设备,生产各种规格、高效率的晶硅太阳能电池片、电池组件等。面对国内外一流的用户,企业如何以质取胜,本文就此进行了探讨。     

晶体硅电池表面钝化的研究进展

随着晶体硅太阳电池技术的不断发展,硅片的厚度不断降低,电池表面钝化对提高太阳能电池转化效率变得尤为重要。本文介绍了表面钝化膜在晶体硅太阳电池中的应用,以及几种晶体硅电池表面钝化方法,包括等离子体增强化学气相沉积法、氢化非晶硅、热氧化法、原子层沉积法以及叠层钝化,并分别介绍了它们在应用上的优缺点。分析了制备钝化膜过程中存在的问题,并提出了相应措施及发展趋势。表面钝化技术是提高晶体硅电池转换效率最有效的手段之一,今后晶体硅电池表面钝化技术仍将是国内和国际研究的热点之一。     

多晶硅：副产物处理多元化新工艺参与竞争

多晶硅是制造晶体硅太阳能电池的重要原材料,目前,晶体硅太阳能电池在所有光伏电池中所占比例约为85％。在2008年国际金融危机到来之前,由于多晶硅现货价格创下近500美元／千克的“天价”,很多业内人士对晶体硅太阳能电池乃至多晶硅材料的应用前景产生怀疑。     

硅太阳能电池的应用研究与进展

介绍了三代太阳能电池的发展历程和最新研究进展,晶体硅太阳能电池在光伏产业中主要朝高效方向发展,认为廉价、高效多晶硅薄膜太阳能电池,是当前太阳能电池研究的热点,也是未来太阳能电池发展的方向。     

陷光结构应用于太阳能电池的研究进展

在太阳能电池中引入陷光结构是提高光电转换效率的一种重要方法。本文主要从晶体硅太阳能电池、薄膜太阳能电池和其他新型太阳能电池三方面,综述了近年来国内外陷光结构用于太阳能电池的最新研究进展,分析了陷光结构对各类太阳能电池性能的影响、陷光作用的原理及工艺手段,最后指出其发展潜力及未来的研究方向。     

我国太阳能发电成本瓶颈将被打破

晶体硅的原料价格不断上升,太阳能电池企业开始另辟第二突破口,转而生产以非晶体硅为原料的薄膜电池。总部设在上海的南通强生光电科技有限公司一条25MW薄膜电池生产线也已进入安装调试阶段,大规模薄膜电池产能已在长三角集聚。     

美研发成果克服染料敏化太阳能电池的致命弱点

目前市场占有率最高的薄膜太阳能电池和晶体硅太阳能电池分别有产生毒物和制造成本高的弱点。1991年瑞士工程师发明的染料敏化电池很好地克服了它们的这些弱点,但填充在电池两极间的电解质溶液会腐蚀电极并有可能泄漏。     

CIGS叠层太阳能电池的中间层及稳定性的研究进展

叠层太阳能电池的问世开创了廉价、大面积、高效率太阳能电池制造与应用的新时代,当前研究最深入、应用最广泛的叠层电池主要有非晶硅/微晶硅(α-Si∶H/mc-Si∶H)的硅基叠层电池以及GaInP/GaAs为代表的Ⅲ-Ⅴ族化合物叠层电池,但是这两类叠层电池在长期光照下性能会发生衰退,影响电池的实际应用。因此人们为制造高稳定性和良好匹配度的叠层电池进行了不懈的努力,包括改进电池制造工艺和开发新材料体系的叠层电池等。铜铟镓硒(CIGS)是一种光吸收系数很高的材料且具有优异的光电性能,但CIGS叠层太阳能电池在光电转换过程中的衰减特别快,稳定性较差,远远达不到其理论效率;另外,CIGS硒化物的黄铜矿结构难以控制,导致其电学性能较差。将CIGS与Si电池叠加起来形成叠层电池,两者性能互补,既可提高CIGS材料的电导率,又可以拓宽Si电池的太阳光吸收波长范围。本文归纳了CIGS叠层太阳能电池器件的研究进展,并总结了各种叠层电池的中间结合层AZO(ZnO∶Al)、FTO(SnO_2∶F)、ITO(In_2O_3∶Sn)等的结构以及光电性能等方面的特点,从中间层、结构以及温度控制等方面论述了影响CIGS叠层太阳能电池稳定性的因素,分析了CIGS叠层太阳能电池面临的问题并展望了其前景,以期为制备稳定和高效率的新型CIGS叠层太阳能电池提供参考。     

New method for patterning the rear passivation layers of high-efficiency solar cells

A new method for patterning the rear passivation layers of high-efficiency solar cells with a mechanical scriber has been developed and successfully adapted to fabricate high-efficiency passivated emitter and rear cell (PERC). Three types of the rear contact patterns: dot patterns with a photolithography process, line and dashed line patterns with a mechanical scriber process have been processed in order to optimize the rear contact structure. An efficiency of 19.42% has been achieved on the mechanical-scribed (MS)-PERC solar cell on 0.5 cm p-type FZ-Si wafer and is comparable to that of conventional PERC solar cells fabricated by using photolithography process. The mechanical scriber process shows great potential for commercial applications by achieving high efficiency above 20% and by significantly reducing the fabrication costs without an expensive photolithography process.     

Impact of interface microstructure on adhesion force between silver paste and silicon solar cells’ emitter

The adhesion strength between silver paste and silicon solar cell’s emitter is a primary source of long-term degradation in solar modules. In this study, the interface microstructure between screen-printed silver thick-film and silicon solar cells’ emitter was studied. Three kinds of commercial silver pastes were printed on silicon solar cells’ emitter to form different Ag–Si contact structures. The interface microstructure between silver paste and emitter was observed by SEM, while the compositions of Ag thick-film were analyzed by EDX. The deductions we got from SEM and EDX were verified by the pull test for the first time. The results presented in this study give some suggestions to the development of silver paste and crystalline silicon solar cells’ fire-through.     

n型晶体硅太阳电池最新研究进展的分析与评估

n型晶体硅具有体少子寿命长、无光致衰减等优点,非常适合制作高效低成本太阳电池.结合PC1D模拟,对n型晶体硅太阳电池的最新研究成果进行了分析,指出n型晶体硅太阳电池要实现产业化必须先解决p型硅表面钝化、硼扩散和硼发射极金属化等问题.最后预测了n型晶体硅太阳电池的产业化前景.     

A Grain Orientation-Independent Single-Step Saw Damage Gettering/Wet texturing Process for Efficient Silicon Solar Cells

Improving electrical and optical properties is important in manufacturing high-efficiency solar cells. Previous studies focused on individual gettering and texturing methods to improve solar cell material quality and reduce reflection loss, respectively. This study presents a novel method called saw damage gettering with texturing that effectively combines both methods for multicrystalline silicon (mc-Si) wafers manufactured using the diamond wire sawing (DWS) method. Although mc-Si is not the Si material currently used in photovoltaic products, the applicability of this method using the mc-Si wafers as it contains all grain orientations is demonstrated. It utilizes saw damage sites on the wafer surfaces for gettering metal impurities during annealing. Additionally, it can crystallize amorphous silicon on wafer surfaces generated during the sawing process to allow conventional acid-based wet texturing. This texturing method and annealing for 10 min allow for the removal of metal impurities and effectively forms a textured DWS Si wafer. The results show that the open-circuit voltage (ΔV_oc = +29 mV), short-circuit current density (ΔJ_sc = +2.5 mA cm⁻²), and efficiency (Δη = +2.1%) improved in the p-type passivated emitter and rear cells (p-PERC) manufactured using this novel method, as compared to those in the reference solar cells.     

T型发射区单晶硅太阳电池的输出特性研究

利用TCAD半导体器件仿真软件对具有T型发射区结构的单晶硅太阳电池进行了仿真研究。全面系统地分析了在不同衬底少子寿命情况下,不同T型发射区深度对太阳电池外量子效率、短路电流密度、开路电压、填充因子及转换效率的影响。仿真结果表明:采用T型发射区结构可在一定程度上提高常规均匀发射区太阳电池的电学性能;T型发射区结构对700~1200nm长波段入射光的外量子效率具有明显的改善作用;当衬底少子寿命一定时,太阳电池短路电流密度、填充因子均随T型发射区深度的增大而增大,而开路电压随T型发射区深度的增大而减小;当T型发射区深度大于80μm时,对于低衬底少子寿命的单晶硅太阳电池,T型发射区结构对其转换效率的改善效果最为显著。     

Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy

Silicon thin films can provide an excellent surface passivation of crystalline silicon (c-Si) which is of importance for high efficiency heterojunction solar cells or diffused emitter solar cells with well-passivated rear surfaces. Hot-wire chemical vapor deposition (hot-wire CVD) is an attractive method to synthesize Si thin films for these applications as the method is ion-bombardment free yielding good quality films over a wide range of deposition rates. The properties of the interface between hot-wire CVD Si thin films and H-terminated c-Si substrates have been studied during film growth by three complementary in situ techniques. Spectroscopic ellipsometry has been used to determine the optical properties and thickness of the films, whereas information on the H-bonding modes and H-depth profile has been obtained by attenuated total reflection infrared spectroscopy. Second-harmonic generation (SHG), a nonlinear optical technique sensitive to surface and interface states, has been used to probe two-photon resonances related to modified Si-Si bonds at the interface. By correlating the observations with ex situ lifetime spectroscopy experiments the growth and surface passivation mechanism of the Si films are discussed.     

Optimization of selective emitter fabrication method for solar cells using a laser grooving

In this paper, screen-printing laser grooved buried contact (LGBC) method was applied, which is compatible with the existing screen-printed solar cell equipment and facilities. Experiments were performed in order to optimize short circuit current (I(sc)), open circuit voltage (V(oc)) and fill factor of high efficiency solar cells. To enhance I(sc), V(oc) and efficiency, heavy doping was performed at low sheet resistance in the laser grooved region of the cell. In contrast, light doping was carried out at a high sheet resistance in the non-laser grooved region. To increase fill factor, porous silicon found on the wafer after dipping in an HF solution to remove SiN(x), was cleared. The fabricated screen-printing LGBC solar cell using a 125 mm x 125 mm single crystalline silicon wafer exhibited an efficiency of 17.2%. The results show that screen-printing LGBC method can be applied for high efficiency solar cells.     

Epitaxially grown crystalline silicon thin-film solar cells reaching 16.5% efficiency with basic cell process

We report about the current performance of crystalline silicon thin-film (cSiTF) solar cells that are a very attractive alternative to conventional wafer-based silicon solar cells if sufficiently high cell efficiencies are achieved at acceptable cost of production. Applying a standard cell process (diffused POCl₃ emitter, front contacts by photolithography, no surface texture) to thin-films deposited with a lab-type reactor, specifically designed for high-throughput photovoltaic applications, on highly-doped Cz substrates we routinely obtain efficiencies above 16%. On 1 Ω cm FZ material substrates we reach efficiencies up to 18.0%, which is among the highest thin-film efficiencies ever reported. Additionally, a comparison to microelectronic-grade epitaxially grown cSiTF material underlines the excellent electrical quality of the epitaxial layers deposited.     

单晶硅太阳电池发射区结构设计与工艺优化

首先利用TCAD半导体器件仿真软件全面系统地分析了不同发射区表面浓度和结深对P型单晶硅太阳电池短路电流、开路电压、填充因子及转换效率的影响。然后以获得最优的发射区结构参数为目标,对热扩散工艺和离子注入工艺进行了仿真研究。仿真结果表明,发射区表面浓度和结深的变化对单晶硅太阳电池输出特性产生显著影响。当发射区表面浓度为5×1020 cm-3,结深为0.1μm时,太阳电池转换效率最高,可达20.39%。若采用热扩散工艺制备发射区,扩散温度范围为825~850℃,扩散时间范围为10~20min;若采用离子注入工艺制备发射区,当注入剂量为1×1017 cm-2,注入能量为5keV时,退火温度范围为850~875℃,退火时间范围为5~15min。     

晶体硅太阳电池工艺技术新进展

晶体硅太阳电池是目前技术最成熟、应用最广泛的太阳电池.以晶体硅太阳电池的生产流程为基础,主要从提高电池转换效率和降低生产成本出发,介绍了晶体硅太阳电池制造技术的最新进展和成果,并对各种制备工艺进行了评价.