TiO2-SiO2系统凝胶玻璃薄膜折射率的研究

应用光度法研究了溶胶－凝胶系统组成、热处理温度对iO2-SiO2系统凝胶玻璃薄膜折射率的影响规律。随薄膜中TiO2含量的增加以及热处理温度的升高，薄膜的折射率逐渐增大。通过调整TiO2-SiO2系统的组成及适当的热处理温度，可实现TiO2-SiO2系统薄膜折射率在1．5－2．4之间的连续变化。     

钙钛矿型锂快离子导体Li3xLa0.67-xCryTi1-2yNbyO3系统的研究

以Li3xLn0.67-xTiO3为母体,通过掺杂经高温固相反应制得一系列新的锂快离子导体材料Li3xLa0.67-xCryTi1-2yNbyO3.X射线衍射分析表明x=0.10和y≤0.10的组成范围内能得到钙钛矿型的固溶体.应用交流阻抗技术测试其电导率,结果表明:系统合成物在室温下有较高的体相电导和总电导分别为10-4S/cm和10-5S/cm,其中在x=0.10和y=0.025具有最大值为3.62×10-4S/cm.同时在298～523K具有较低的体相活化能和总活化能,分别约为13～20kJ/mol和35～38kJ/mol.     

ZnO掺杂的ZrO2(3Y)纳米复合相材料的中低温电导研究

采用交流阻抗技术对掺纳米ZnO的纳米ZrO2(3Y)复合掺杂材料在473—973K温度范围电导率随ZnO第二相质量分数(0．0％-5．0％(质量分数))的变化关系进行了研究。研究发现掺很少量的纳米ZnO(0．5％-1．0％(质量分数))，纳米ZrO2(3Y)材料晶粒和晶界电阻显著增加，电导率降低，原因在于缺陷缔合效应和晶界偏聚效应的加剧，阻碍了氟空位的迁移。随着ZnO掺入量的增加(＞1．0％(质量分数))，晶界电阻显著减小，晶粒电阻变化不大，总电导率回升，在中低温范围，总电导活化能与晶界电导活化能具有相同的变化趋势。     

SiO2-ZrO2-B2O3系统凝胶玻璃的析晶研究

利用溶胶－凝胶原理，分别制备了SiO2-ZrO2-B2O3系统中六种不同成分的凝胶玻璃试样。通过分级热处理，系统地检验了其各自析晶性能以及高温结构稳定性。确定－最佳水解工艺参数以使SiO2-ZrO2-B2O3凝胶玻璃在1500℃保温30min后的析晶量（vol%)仅为1％－3％。同时，详细分析了ZrO2的引入对凝胶玻璃系统析晶的促进作用，以及少量B2O3对系统析晶的抑制作用。     

纳米(ZnO,Al2O3)复合掺杂对3Y2O3-ZrO2材料电性能的影响

以3Y2O3—ZrO2纳米粉和ZnO，A12O3纳米粉为原料，采用交流阻抗谱技术对掺少量ZnO和A12O3的3Y2O3—ZrO2烧结陶瓷进行电性能研究。研究表明：少量纳米ZnO掺杂降低了3Y2O3—ZrO2的电导率，但随着掺人量的增加，电导率开始回升。在ZnO掺杂样品中加入少量纳米A12O3进行复合第二相掺杂，结果提高了3Y2O3—ZrO2材料的电导率。同时少量A12O3的掺人降低了晶粒电导活化能，使得晶粒电导率增加。     

Na_3Hf_(2-x)TixSi_2PO_(12)系统快离子导体的研究

以 Na_3PO_4、HfO_2、SiO_2为主要原料,铂舟为反应器皿,在900～1200℃的高温下,加热数小时至20h(少数样品达40h),合成了一系列合成物。多数反应在1100～1150℃进行。x=0～0.5的合成物为 NASICON和 HfO_2的二相区。x=0.6～1.0时为 NASICON 单纯相。x>1.0开始出现玻璃态。系统合成物的电导性测定结果发现除母体以外最好的是 x=0.6的合成物。其电导率在400℃时为2.76×10~(-2)(Ω·cm)~(-1)。它的活化能在200～400℃温区里为25.5kJ/mol。     

Y2O3稳定ZrO2材料的电导活化能

在313－473K温度范围内测定了一种Y2O3稳定ZrO2材料（YSZ）的交流电导率谱，进而导出了材料的直流电导率并分析了其随温度的变化关系。研究发现：在低温下材料的电导尖化能随温度的升高而增大。这一实验现象与在高温下所观察到的活化能随温度升高而降低规律截然相反。通过分析材料中氧空位的解缔及迁移机制，对YSZ材料中电导活化能随温度的变化关系作出了一个合理的解释。     

锂快离子导体Li1+2xAlxTiyGe2-x-ySixP3-xO12系统的研究

以高岭石为起始原料,经高温固相反应(～1000℃)合成了Li1+2xAlxTiyGe2-x-ySixP3-xO12(以下简称Ti-Ge-Lisicon)系统的锂快离子导体.应用交流阻抗技术测定的电导率数据结果表明,y=1.5,x=0.2的合成物的电导率最好,400℃时电导率达2.13×10-2S/cm,200～400℃内的电导激活能为30.6kJ/mol.XRD分析结果表明在一定的组成范围内得到空间群为R3c的合成物.     

Ti1-xVxO2薄膜的制备及光电性能

用溶胶凝胶法制备了Ti1-xVxO2薄膜，用X射线衍射分析了Ti1-xVxO2的结晶性能，用Lambda紫外－可见光光度计测量了吸收光谱，用ZC36高阻仪测量了Ti1-xVxO2薄膜样品的电性能，结果表明，钒含量的增加导致Ti1-xVxO2薄膜光学吸收限红移，在形成固溶体后薄膜的电阻率随钒含量增加而下降，在x=0.15时，V2O5相的出现使Ti1-zVxO2薄膜的电阻出现一峰值，Ti1-xVxO2薄膜电阻率的这种变化规律是由于V的3d电子的引入和薄膜结晶性的变化。     

锂离子电池正极材料Li2+2xTi1-xCux(NbO4)2的研究

采用高温固相反应合成了Li2+2xTi1-xCux(NbO4)2,XRD分析表明当x≤0.8时均能得到与LiFePO4相同的橄榄石结构.电导率测定结果表明x=0.6的合成物室温电导率最高,为1.26×10-5S/cm,且当x≥0.6时合成物都表现出离子电导的特征.以x=0.6的合成物做成的待测电极与锂片组成电池,在1mol/L的LiPF6/EC+DMC(1∶1)电解液中在0.5～4.6V间以0.10mA/cm2的电流密度进行电池循环测试的结果表明,该电池的首次放电比容量高达805.8mAh/g,放电平台在对Li+/Li电对为2V附近,但其可逆性及循环性均有待改善.     

Room Temperature Ferromagnetism in Dual Doped (Mn 2+ , Ni 2+ ) ZnO Codoped with Li 1+ Prepared Using EDTASintered at Low Temperature

Nanopowders of Znl_x_y_zMnxNiyLizO [（x = 0.04, y = 0, z = 0）, （x = 0.04, y = 0.03, z = 0） and （x = 0.04, y = 0.03, z = 0.03）] have been synthesized by sol-gel precursor route using ethylene diamine tetraacetic acid （EDTA） as a metal chelating agent. X-ray diffraction analysis confirms the formation of wurtzite hexagonal structure for all the three compositions. Mn2＋ doped ZnO exhibits room temperature ferromagnetism （RTFM）, and it is found that further Ni2＋ doping has decreased Ms because of limit of solid solubility of transition metal in ZnO. But codoping of monovalent Li1＋, further increases the ferromagnetism （FM） value, due to introduction of free carriers compared to the dual doped samples. Photoluminescence （PL） spectra of the system, exhibit near band edge （NBE） emission peak at --464 nm due to the electron transition from interstitials to the valence band. Recombination of conduction electron with hole trapped at oxygen vacancy, leads to prominent defect emission peaks at --482 nm and 532 nm. The evidence of the formation of metaI-EDTA complexes are found from the Fourier transform infrared spectra at 2800-3800 cm-1 with shifting, splitting of the peak and also drastic variations in the intensity.     

Structural and Magnetic Properties of Sm$_3$(Fe$_1-rm x$Co$_rm x$)$_27.7$Ti$_1.3$

The structure and magnetic properties of Sm₃(Fe_1-x Co_x)_27.7Ti_1.3 compounds, with x ranging from 0 to 0.4, have been investigated by means of X-ray powder diffraction and magnetic measurements. The main phase formed was that of Nd₃(Fe, Ti)₂₉-type structure (3:29) with a relatively small amount of the ThMn₁₂-type structure (1:12) as a secondary phase (7-13 wt.%). The lattice parameters and the unit-cell volume decrease with increasing Co content x. It is found that substitution of Co for Fe leads to a significant increase in the Curie temperature from 488 K for x=0 to 941 K for x=0.4. Saturation magnetization gradually increases with increasing Co. All compounds show easy cone-type anisotropy     

(Mg2Si1-xSbx)0.4-（Mg2Sn）0.6固溶体合金的制备及热电输运特性

以Mg、Si、Sn、Sb块体为原料,采用熔炼结合放电等离子烧结(SPS)技术制备了n型(Mg2Si1-xSbx)0.4-(Mg2Sn)0.6(0≤x≤0.0625)系列固溶体合金.结构及热电输运特性分析结果表明:当Mg原料过量8wt%时,可以弥补熔炼过程中Mg的挥发损失,形成单相(Mg2Si1-xSbx)0.4-(Mg2Sn)0.6固溶体.烧结样品的晶胞随Sb掺杂量的增加而增大;电阻率随Sb掺杂量的增加先减小后增大,当样品中Sb掺杂量x≤0.025时,样品电阻率呈现出半导体输运特性,Sb掺杂量x>0.025时,样品电阻率呈现为金属输运特性.Seebeck系数的绝对值随Sb掺杂量的增加先减小后增大;热导率κ在Sb掺杂量x≤0.025时比未掺杂Sb样品的热导率低,在Sb掺杂量x>0.025时高于未掺杂样品的热导率,但所有样品的晶格热导率明显低于未掺杂样品的晶格热导率.实验结果表明Sb的掺杂有利于降低晶格热导率和电阻率,提高中温区Seebeck系数绝对值;其中(Mg2Si0.95Sb0.05)0.4-(Mg2Sn)0.6合金具有最大ZT值,并在723 K附近取得最大值约为1.22.     

Effect of Sn4+ B-Site Substitution on the Microstructure and Dielectric Properties of Ba(Mg1/3Ta2/3)O3 Microwave Ceramics

1.IntroductionRecent progress of microwave telecommunication de-mands the development and application of a variety ofmicrowave dielectric materials.The materials with highdielectric constant(ε),high quality factor(Q)and smalltemperature coefficient of resonant frequency(TCF)haveattracted the greatest interest of researchers.The com-pounds Ba(B'1/3B"2/3)O3(B'=Mg,Zn,Ni,etc.B"=Ta,Nb,etc.)with complex perovskite structure exhibit veryhigh Q value at microwave frequencies greaterthan10GHz.…     

Magnetic Ordering and Exchange Interaction of Laves Compounds Sm0.9Pr0.1（Fe1—xCox）2

Structure,magnetic properties and magnetostriction of Sm0.9Pr0.1(Fe1-xCox)2 compounds have been investi-gated by means of X-ray diffraction,a.c. initial susceptibility, extracting sample magnetometer,Mossbauer spec-troscopy and standard strain gauge techniques.The lattice parameter a of the MgCu2-type Laves compounds Sm0.9Pr0.1(Fe1-xCox)2 decreases nonlinearly with increasing Co concentration,deviating from the Vegardˊs law.Curie temperature Tc increases initially from 668 K for x=0 to 694 K for x=0.2 and then decreases to 200 K for x=1.0.The saturation magnetization Ms at temperatures 1.5K, 77K and 300K have the same variation tendency as the composition dependence of Curie temperature,in consistence with rigid-band model.The easy magnetization direction(EMD) od Sm0.9Pr0.1(Fe1-xCox)2 lies along [111] direction in the range x≤0.6,and changes to [110] for x=0.8 ,while Sm0.9Pr0.1(Fe1-xCox)2 stays in the paramagnetic state at room temperature.The composition dependence of the average hyperfine field,Hhf,demonstrates a similar variation tendency as that of the saturation magnetiza-tion Ms and Curie temperature Tc .The spontaneous magnetostricton λ111 increases with increasing Co content.The saturation magnetostriction λs decreases monotonically with increasing x,which is caused by the increase of magnetostriction constant λ100 with opposite sign to that of λ111.A two-sublattice model has been proposed to understand the intermediate region between the [111]and [110] spin configurations ,which can also be used to explain the temperature dependence of magnetization.     

非化学计量比对(K0.465Na0.465Li0.07)(Nb0.95Sb0.05)O3无铅压电陶瓷结构及性能的影响

通过传统固相合成工艺制备了(K0.465+xNa0.465+yLi0.07)(Nb0.95-zSb0.05)O3(x,y,z=-0.01～0.02)无铅压电陶瓷,研究了非化学计量比对陶瓷结构及压电性能的影响。结果表明符合化学计量比的陶瓷具有四方钙钛矿结构;在实验范围内,K和Nb的过量或少量均不会改变体系的相结构,而Na过量将会导致体系正交-四方相变温度升高到室温以上,并且正交-四方相变温度随y的增加而升高;过量添加约0.5%(摩尔分数)的K或Na便能补偿在高温烧结时的碱金属元素的挥发损失,进而提高陶瓷的压电性能;该体系陶瓷的组分在较大范围内变化时(如当y=z=0时,x=0～0.02;当x=z=0时,y=0～0.01;以及当x=y=0时,z=-0.01～0.005),仍然能保持d33>200pC/N和kP>40%这样较好的性能。上述结果不仅有利于在研究中材料制备工艺的重复,而且有利于当材料在器件应用时所面临的规模化生产。     

Electrical conduction of partially stabilized zirconia Zr0.94Ca0.06O1.94 as a function of temperature and oxygen partial pressure

Partially stabilized zirconia (PSZ), Zr_0.94Ca_0.06O_1.94was prepared by a hot kerosene drying method and a conventional oxide wet-mixing method. The total d.c. conductivities of these zirconia specimens were measured by the three-terminal technique as a function of temperature in the range 1088 to 1285 K and oxygen partial pressure in the range 1 to 10^–24 bar. The specimen prepared by the hot kerosene drying method showed near oxygen ion conduction with four times higher conductivity than the specimen prepared by the conventional mixing method at T=1088–1285 K and bar. The higher oxygen pressure conductivity tended approximately towards a to dependence, indicative of p-type conduction, whereas the lower oxygen pressure conductivity tended to be virtually independent of oxygen pressure, indicative of oxygenion conduction. The activation energy was found to be 130 kJ mol^–1 at T=1088–1285 K, bar (air) for pure electron-hole conduction and 153kJ mol^–1 at T=1088–1285 K for ionic conduction.     

Electrical transport properties of bulk amorphous Gex Se1−x

d. c. -Conductivity measurements have been made as a function of temperature (80–330 K) on bulk amorphous samples of Ge_xSe_1?x (0.1 ? x ?0.7), in order to identify the conduction mechanism and to observe the effect of selenium -doping on the d. c.-conductivity of germanium. It is found that for samples with a low concentration of selenium (0. 5? x ? 0. 7 ), conduction in the high temperature region (330-180 K) is due to thermally assisted tunneling of electrons in the localized states at the conduction band edge, and in the low temperature region (80–190 K), conduction takes place through variable range hopping in the localized states near the Fermi level. The addition of selenium is found to increase the amorphicity of the samples. In the samples with a relatively high content of selenium (0.1 ? x ? 0.4), conduction in the entire temperature range of investigation is due to the thermally assisted tunneling of holes in the localized states at the valence band edge.     

Magnetic properties of polycrystalline gadolinium calcium vanadium and indium substituted YIG

The gadolinium garnet system {GdzY3-2x-zCa2x} [Fe2-yIny] (Fe3-xVx)O12was investigated as a function of x, y, and z for0 leq x leq 0.6, 0 leq y leq 1.0, and0 leq z leq 2.4. The relationships between their compositions and magnetic properties were clarified. It was shown that some combinations of components in this system displayed improvements with respect to temperature stability (alpha = 0.05%/°C-20 sim 60 degC) and ferromagnetic resonance linewidth (ΔH = 20 ∼ 30 Oe) as compared with conventional garnets.     

Phase relation in titanium-aluminide alloy — an X-ray study

Results of X-ray diffraction studies on titanium aluminides stabilized by niobium, vanadium and molybdenum are reported to establish a phase relation in the Ti-25Al-10Nb-3V-1Mo at% (Ti-25-10-3-1) alloy. It is shown that the composition of the phases probably deviated slightly from ideal stoichiometry Ti₃Al for ₂ and Ti₂AlNb for -type; its partial ordering in of the -phase type and the phase relation is 64% -type and 36% ₂ phase.