Effect of annealing temperature on structure and electrochemical properties of LiCoO2 cathode thin films

LiCoO2 thin films, which can be used as a cathode material in microbatteries, were deposited using radio frequency (r.f.) magnetron sputtering system from a LiCoO2 target and in an O2+Ar atmosphere.The films were characterized by various methods such as XRD, SEM and AFM.The LiCoO2 films were annealed in air at 300, 500, 700 and 800 ℃ respectively.The effect of the annealing temperature on the structure, the surface morphology and the electrochemical properties of the films were investigated.The LiCoO2 thin film deposited at room temperature is amorphous and has smaller grain size.With increasing of annealing temperature, the crystallinity of the films is promoted.When the annealing temperature increases to 700 ℃, the films have a perfect crystalline LiCoO2 phase.The LiCoO2 thin film without annealing has no discharge plateau and small discharge capacity (about 27 μAh·cm-2μm).The discharge capacity increases with the increasing of annealing temperature and reaches 47 μAh·cm-2μm for the film annealed with 700 ℃, which also shows the typical discharge plateau of 3.9 V.The cycle performance of LiCoO2 thin films of as grown and annealed at different temperatures were studied.In the case of the film without thermal treatment, the capacity fading is much faster than that of the film annealed at different temperature, showing about 40% capacity loss only after 25 cycles.However, in the case of the film annealed at 700 ℃, the capacity reaches to steady state gradually and maintained constantly with cycling.After 25 times cycling, the discharge capacity of the film annealed at 700 ℃ decreases to about 36.9 μAh·cm-2·μm, only 0.8% capacity loss per cycle.     

退火温度对钴铁氧体薄膜结构和性能的影响

采用溶胶-凝胶法结合匀胶旋涂工艺在复合基片(Pt/Ti/SiO2/Si)上制备了钴铁氧体(CoFe2O4)薄膜,利用XRD、SEM、VSM分析了薄膜的微结构以及磁性能,研究了不同退火温度对钴铁氧体薄膜的结构和磁性能的影响.结果表明,钴铁氧体在500℃时开始形成尖晶石相.随着退火温度的增高,钴铁氧体晶粒逐渐长大,饱和磁化...     

热处理对FeCuNbSiB单层膜磁性能的影响

本文研究了热处理对FeCuNbSiB薄膜结构及磁性能的影响。XRD分析表明制备态的FeCuNbSiB为非晶态,并且在300℃热处理仍然保持非晶态。300℃热处理后,薄膜释放应力,软磁性能有所提高。热处理温度进一步升高,薄膜由非晶态转化为纳米晶,矫顽力及饱和磁化场明显增加,磁矩向垂直膜面方向转动,软磁性能下降。     

Effects of annealing temperature and time on microstructure and magnetic properties of Pr-Co thin films

A series of Pr-Co thin films were deposited on the Si (100) substrates with Cr underlayer by magnetron sputtering. The effects of both the post-annealing temperature and the annealing time on the microstructure and magnetic properties for the Pr-Co films were studied systemati- cally. The as-deposited Pr-Co thin films are mostly amorphous and tend to crystallize after annealing at temperatures above 600 C. When the annealing time is increased, the films show a complicated structure with various phases coexisting. Accordingly, the as-deposited film and low temperature annealed films are soft magnets and films annealed at temperatures beyond 600 C tend to be hard magnets. When the annealing time is increased from 5 min to 2 h, the films transfer from hard magnets to soft again. The sample annealed at 600 C for 10 min shows the largest coercivity of 0.59 T.     

Effects of substrate temperature and annealing on the anisotropic magnetoresistive property of NiFe films

Ni83Fei7 films with a thickness of about 100 ran were deposited on thermal oxidized silicon substrates at ambient temperature, 240, 350, and 410℃ by DC magnetron sputtering. The deposition rate was about 0.11 nm/s. The as-deposited films were annealed at 450, 550, and 650℃, respectively, in a vacuum lower than 3 x 10-3 Pa for 1 h. The Ni83Fei7 films mainly grow with a crystalline orientation of [111] in the direction of the film growth. With the annealing temperature increasing, the [111] orientation enhances. For films deposited at all four different temperatures, the significant improvement on anisotropic magnetoresistance occurs at the annealing temperature higher than 550℃. But for films deposited at ambient temperatures and 240 ℃, the anisotropic magnetoresistance can only rise to about 1% after 650 ℃ annealing. For films deposited at 350℃ and 410℃, the anisotropic magnetoresistance rises to about 3.8% after 650℃ annealing. The atomic force microscopy (AFM) observation shows a significant i     

FePt/Au多层膜的结构和磁性能研究

采用磁控溅射在SiO2<0001>基片上制备了FePt(2nm)/Au(tnm)多层膜,将其在不同温度下进行热处理。利用X射线荧光光谱仪、X射线衍射仪、振动样品磁强计和原子力显微镜对样品的结构和性能进行了研究。结果表明,沉积态样品具有超晶格结构,fccFePt和Au共格生长。经过较低温度热处理后,样品仍然保持超晶格结构。样品经400℃热处理后,开始发生有序化转变。经600℃热处理后,平行于膜面和垂直于膜面的矫顽力分别为811.7和829.2kA·m-1。当t=2.5nm时,最有利于L10-FePt相的形成。在磁化过程中,畴壁移动和磁矩转动机制共存。样品经热处理后,形成了均匀的薄膜。     

Microstructure and nanomechanical properties of Mn-rich Ni–Mn–Ga thin films

We report the effect of post-annealing on the crystalline phase, grain growth, magnetic and mechanical properties of Ni–Mn–Ga thin films deposited at room temperature followed by post-annealing at different temperatures. The phase and microstructural analysis reveal that amorphous to crystalline transformation occurs in as-deposited films after post-annealing above 873 K. The transformation of disordered phase into nanocrystalline phase by the influence of annealing has been confirmed by transmission electron microscopy. The crystalline films exhibit soft magnetic behavior with the Curie temperature of 314 K, while the amorphous films exhibit the Pauli-paramagnetic behavior even down to 4 K. The mechanical properties like hardness and elastic modulus of the films also show a strong dependence on the annealing temperature with crystalline film exhibiting maximum values of 6 GPa and 103 GPa, respectively. The Ni–Mn–Ga film annealed at 873 K exhibits enhanced nanomechanical properties and room temperature ferromagnetism which make this a potential candidate for use in MEMS devices.     

退火温度对MAO-TC4钛合金表面组织及腐蚀性能的影响

通过微弧氧化技术(Micro-arc oxidation, MAO)对TC4合金进行表面处理,随后采用X射线衍射仪、场发射扫描电镜、激光共聚焦显微镜、硬度测试以及电化学腐蚀等方法研究不同退火温度下MAO-TC4合金的表面氧化膜层形貌、厚度、硬度、相结构以及电化学腐蚀行为。结果表明:随着退火温度的升高,MAO-TC4合金表面氧化膜层的显微硬度亦随之增大,当退火温度为850 ℃时,其最高显微硬度为592 HV0.2。450~850 ℃退火温度范围内,随退火温度升高,MAO-TC4合金的膜层耐腐蚀性先增加后降低;当退火温度为650 ℃时,膜层的自腐蚀电流密度为0.125 μA/cm²,耐腐蚀性能最佳。     

轧制和退火对Cu-Mg-Te-Y合金组织和性能的影响(英文)

研究Cu-Mg-Te-Y合金在铸态、热轧态、冷轧态的组织和元素分布;讨论不同退火温度对Cu-Mg-Te-Y合金组织的改变;分析轧制和退火温度对Cu-Mg-Te-Y合金性能的影响。结果表明,不同的轧制工艺获得的合金组织与铸态合金组织相比差别明显,轧制后合金中Mg元素分布比铸态合金的更加均匀,Cu-Mg-Te-Y合金热轧后Cu2Te相被挤碎,尺寸变小,分布更加弥散,继续冷轧后Cu2Te相则被拉长、压扁,呈细条状。冷轧后的Cu-Mg-Te-Y合金在390°C以下退火1 h,组织变化不明显,在550°C退火1 h后,冷变形产生的纤维状组织发生完全回复再结晶,加工硬化效果消失,抗拉强度大幅度下降,导电率上升。退火温度在360~390°C范围内,Cu-Mg-Te-Y合金可以获得较好的力学性能。     

Study of magnetic and magneto-optical properties of heavily doped bismuth substitute yttrium iron garnet (Bi:YIG) film

The magnetic and magneto-optical properties of heavily doped Bi:YIG film were studied. The film was deposited by radio frequency magnetron sputtering method and crystallized by rapid recurrent thermal annealing (RRTA). The results show that the RRTA treated film has good properties both in microwave and optical wave band. The saturation magnetization of the film on different substrates varies from 135.7 to 138.6 kA·m -1 . The coercive field of the film on GGG substrate is about 0.32 kA·m -1 , while about 0.8-1.43 kA·m -1 on YAG substrate and 1.75 kA·m-1 on Al2O3 substrate. The Faraday angle is about 3-5 (°)·um-1 when optical wavelength ranges at 450-600 nm. The transmission spectra of the Bi:YIG films on three substrates has similar change as annealing temperature below 800 ℃. Specially, when annealing temperature is above 800 ℃ a step is observed between 550 and 650 nm wavelength for the film deposited on Al2O3 substrate.Three results are very useful in magneto-optical recording application and integrated microwave devices.     

PREPARATION AND STRVCTURAL EVOLUTION OF TiO_2 THIN FILMS BY LOW PRESSURE MOCVD

1. IntroductionTitanium dioxide (TiO2) films are widely used for electrical and optical applications because of its high dielectric constant, its chemical stability and its high refractive i.de.[1--2].Tioz thin films can be prepared by various thin film deposition techniquesl3--8]. Amongthese techniques, chemical vapor deposition (CVD) is considered as a useful method to deposit high quality thin films with large area uniformity and well--controlled stoichiometry.Crystalline TiOZ exists th…     

真空退火对镀Al薄膜NdFeB磁体矫顽力和耐蚀性的影响

采用电弧离子镀技术在烧结NdFeB表面沉积一层Al薄膜,并进行真空退火热处理。利用扫描电镜、永磁材料测量系统、电化学工作站和盐雾试验箱等,研究了不同退火工艺对Al/NdFeB试样显微组织、磁性能和耐蚀性的影响。结果表明,随着退火温度的升高,矫顽力先升高后降低,550 ℃退火60 min时矫顽力最高,达到22.41 kOe,较镀态试样增幅7.6%,但耐蚀性有所降低;随着退火时间的增加,矫顽力先降低后升高,550 ℃退火5 min时矫顽力为22.16 kOe,且自腐蚀电流密度较基体NdFeB降低了1~2个数量级。550 ℃退火5 min试样具有较高的矫顽力和较好的耐蚀性能。     

退火温度对FeCuNbSiB纳米晶合金磁性能的影响

用熔体快淬法制备出3种FeCuNbSiB纳米晶合金带材,绕制成50 mm×32 mm×20 mm的环形磁环,随后在530~620℃下进行等温退火,研究退火温度对合金磁性能的影响。结果表明:随着退火温度的增加,合金内部晶化相的晶粒尺寸和体积分数有所增加。在550~600℃等温退火后合金具有相对较低的矫顽力(Hc为1.0~1.5 A/m,测试条件:Bm=100 mT,f=10 kHz)和损耗值(Pm为1.4~1.8 W/kg,测试条件:Bm=300 mT,f=10 kHz),特别是经过570~590℃退火后合金在1 kHz^50 kHz频率范围内具有最佳的磁导率。同时,在1 kHz^10 MHz频率范围内,不同测试频率下合金阻抗值对应的最佳退火温度也不同。     

退火对电沉积纳米晶镍在不同腐蚀液中耐蚀性影响的研究

采用直流电沉积法制备纳米晶Ni镀层,通过电化学法研究了不同热处理温度下电沉积纳米晶镍的耐蚀性。结果表明：电沉积纳米晶镍在200 ℃以下退火,晶粒尺寸变化不明显,300 ℃退火后,晶粒显著增大,但尺寸仍为纳米级;电沉积纳米晶镍经过200和300 ℃的退火处理,有利于改善抗高浓度NaOH和NaCl腐蚀液腐蚀的能力;纳米晶镍在NaOH和NaCl腐蚀液中的耐蚀性能不同,Cl^-对纳米晶镍的腐蚀性远高于OH^-腐蚀。     

退火温度对磁控溅射TiN/TiCN薄膜残余应力、结构及耐蚀性能的影响

采用反应磁控溅射在AZ31合金上制备了TiN/TiCN薄膜,并对沉积后的薄膜进行真空去应力退火。分别采用X射线荧光光谱仪(XRF)、扫描电镜(SEM)、掠入射X射线衍射(GIXRD)和电化学工作站对退火前后的薄膜进行表面化学成分、形貌结构、残余应力以及耐蚀性能分析。结果表明:薄膜由FCC结构的TiCN和TiN组成。退火后,薄膜的晶粒尺寸和结晶度增大,内部残余应力显著下降,电化学腐蚀区域的Ti、C、N元素含量下降,250 ℃退火薄膜的耐蚀性能与沉积态薄膜相当,300 ℃退火后薄膜的耐蚀性能下降。     

EFFECT OF HEAT TREATMENTS ON THE MICROSTRUCTURE AND TRANSFORMATION CHARACTERISTICS OF TiNiPd SHAPE MEMORY ALLOY THIN FILMS

Microstructure and phase transformation behaviors of the film annealed at different temperatures were studied by X-ray diffractometry （XRD）, transmission electron microscopy and differential scanning calorimeter （DSC）. Also tensile tests were examined. For increasing annealed temperature, multiple phase transformations, transformations via a B19-phase or direct martensite/austenite transformtion are observed. The TiNiPd thin film annealed at 750℃ had relatively uniform martensite/austenite transformtion and shape memory effect. Martensite/austenite transformtion was also found in strain-temperature curves. Subsequent annealing at 450℃ had minor effect on transformation temperatures of Ti-Ni-Pd thin films but resulted in more uniform transformation and improved shape memory effect.     

Effect of annealing temperature on the structure and optical properties of sputtered TiO2 films

TiO₂ thin films were deposited by DC reactive magnetron sputtering. Some TiO₂ thin films samples were annealed for 5 min at different temperatures from 300 to 900 °C. The structure and optical properties of the films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (SEM) and ultraviolet-visible (UV-vis) spectrophotometry, respectively. The influence of the annealing temperature on the structure and optical properties of the films was investigated. The results show that the as-deposited TiO₂ thin films are mixtures of anatase and rutile phases, and possess the column-like crystallite texture. With the annealing temperature increasing, the refractive index and extinction coefficient increase. When the annealing temperature is lower than 900 °C, the anatase phase is the dominant crystalline phase; the weight fraction of the rutile phase does not increase significantly during annealing process. As the annealing temperature rises to 900 °C, the rutile phase with the large extinction coefficient becomes the dominant crystalline phase, and the columnar structure disappears. The films annealed at 300 °C have the best optical properties for the antireflection coatings, whose refractive index and extinction coefficient are 2.42 and 8 × 10⁻⁴ (at 550 nm), respectively.     

Study on the synthesis of NiZnCu ferrite nanoparticles by PVA sol–gel method and their magnetic properties

Ni_0.65Zn_0.35Cu_0.1Fe_1.9O₄ nanoparticles fabricated by a polyvinyl alcohol (PVA) sol–gel process have been investigated by infrared spectra (IR), X-ray diffraction (XRD), transmission electron microscope (TEM) and Mössbauer spectroscopy measurements. The particles annealed at and above 250 °C are single phase NiZnCu ferrite with spinel structure. Particles annealed at and above 350 °C behave ferrimagnetically, while sample annealed at 250 °C is simultaneously paramagnetic and ferrimagnetic. In addition, the transition from the paramagnetic to the ferrimagnetic state can be observed in sample annealed at 250 °C as the measuring temperature decreases from 260 °C to liquid nitrogen temperature. The magnetic properties of NiZnCu ferrite nanoparticles are clearly size-dependent. The saturation magnetization increases with the annealing temperature. The coercivity of NiZnCu ferrite nanoparticles reaches a maximum when the annealing temperature is 550 °C.     

退火温度对(Fe_(0.5)Co_(0.5))_(78.4)Si_9B_9Nb_(2.6)Cu_1软磁合金高频磁性的影响

研究了不同退火温度对(Fe_(0.5)Co_(0.5))_(78.4)Si_9B_9Nb_(2.6)Cu_1纳米晶软磁合金结构和高频磁性的影响。结果表明,在初始晶化温度455℃以上退火,在非晶基体中析出α—FeCo相。随着退火温度的升高,开始出现有序的(Fe,Co)_3Si。当退火温度高于620℃时,出现硼化物硬磁相。490℃退火后合金的初始磁导率最高可达23000,晶粒尺度为19.4 nm。在490~610℃退火,随退火温度的提高,合金复数磁导率下降,但截止使用频率提高。实验观察到该合金的磁谱曲线为驰豫型,截止使用频率f_r为3.14~5.64 MHz,明显高于Fe基纳米晶软磁合金。     

退火对TbCo薄膜结构和磁性能的影响

研究了真空退火对TbCo薄膜结构和磁性能的影响。结果表明：薄膜从溅射态的非晶薄膜转化为退火态的微晶薄膜，并以(100)面择优取向，其c轴平行于基片。在真空退火不改变TbCo薄膜的成分的条件下，发现TbCo薄膜从溅射态的垂直磁化膜转化为退火态的面内膜。