大气等离子喷涂Al2O3-3%TiO2涂层的性能

利用两种中频交流磁控溅射电源,溅射Al2O3含量为2%的两块氧化锌铝陶瓷靶材,在不同衬底温度的条件下制备得到了ZAO薄膜。研究了不同衬底温度条件下不同靶材和溅射电源对ZAO薄膜结构、电学和光学性能的影响。结果表明,制备得到的ZAO薄膜均具有c轴择优取向生长的晶体结构,在衬底温度为240℃时,得到的ZAO薄膜的电阻率低至1.4×10-3Ω·cm,可见光平均透过率在82%以上。     

掺铝氧化锌薄膜的红外性能及机制

采用中频交流磁控溅射氧化锌铝(ZnO 2％Al2O3)陶瓷靶材的方法制备了掺铝氧化锌ZAO(ZnO：Al)薄膜．利用红外光谱仪测试了薄膜的红外反射性能,研究了薄膜厚度、基体温度和氩气压力对ZAO薄膜红外反射性能的影响规律,确定了制备具有高红外反射率的ZAO薄膜的工艺参数．     

透明导电氧化物ZnO:Al(ZAO)薄膜的研究

用磁控反应溅射法制备了ＺｎＯ：Ａｌ薄膜,研究了薄膜方块电阻空间分布的均匀性及微观形貌,并对ＺｎＯ：Ａｌ薄膜表面各元素的化学状态和深度分布进行了ＸＰＳ和ＡＥＳ分析,同时也讨论了薄膜的光学电学性能。     

溅射功率对射频磁控溅射Al掺杂ZnO（ZAO）薄膜性能的影响

用射频磁控溅射技术,在纯氩气氛中不同溅射功率（120 W~210 W）下于玻璃衬底上制备了Al掺杂ZnO（ZAO）薄膜。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、光谱仪和四探针测试仪等对所制备的薄膜进行了晶体结构、光学和电学性能分析。结果表明,纯氩气氛中不同溅射功率下玻璃衬底上原位沉积的ZAO薄膜具有明显的c轴择优取向性,它没有改变ZnO的六角纤锌矿结构;ZAO薄膜的可见光区平均透光率不强烈依赖于溅射功率,为75%左右;原位沉积ZAO薄膜的电阻率达到102Ω.cm数量级范围,随溅射功率由120 W增大到210 W时,薄膜电阻率从132.67Ω.cm降低到21.08Ω.cm。     

Structural,electrical, and optical properties of reactively sputtered SnO<Subscript>2</Subscript> thin films

SnO₂ thin films prepared by reactive rf magnetron sputtering have been investigated to examine the effect of deposition parameters on its crystallinity and electrical and optical properties. Of particular interest was whether the nonequilibrium nature of sputtering could create large departures from the bulk defect properties, especially in amorphous films. Two deposition parameters were examined: substrate temperature (T_sub) and oxygen content. The films were characterized by X-ray diffraction (XRD), optical transmission, four point probe electrical conductivity, and Hall effect measurements. The crystallinity was found to be enhanced by the incease in each of the three processing variables. Below a substrate temperature of 300 °C a large processing window for depositing amorphous SnO₂ was found.     

High orientation Al films growth on LiNbO3 single crystal and its adhesion

High orientation Al films were deposited on 64°Y-XLiNbO3 substrate by DC magnetron sputtering and the influence of deposition temperature on microstructure and adhesion properties of Al films were investigated. The results show that crystallographic orientation of films varies with substrate temperature and the adhesion strength between LiNbO3 and Al films strongly depends on crystallographic orientation of Al films. The (111) orientated Al films shows stronger adhesion strength to LiNbO3 substrate than (100) orientated films. There is an optimum substrate temperature of 60 ℃ and hardening temperature of 200 ℃ for obtaining high (111) orientated Al films with good surface structure and adhesion property. Using this Al film, we have successfully fabricated the SAW filters with high frequency of about 1.89 GHz.     

Effects of atomic layer deposition temperatures on structural and electrical properties of ZnO films and its thin film transistors

Organic-inorganic thin film transistors (OITFTs) with Al/ZnO/PVP structure on Si substrate were fabricated and studied as to their structural and electrical properties. PVP (poly-4-vinylphenol) organic gate insulator was coated on Si substrate by spin coating method. The ZnO was deposited as an active layer by using the atomic layer deposition (ALD) method on PVP/Si substrate at various temperatures ranging from 80 to 140 °C. The structural and electrical properties of ZnO thin films were analyzed by X-ray diffraction and by hall-effect measurement system for optimum process of the OITFT. The grain size and carrier concentration of ZnO films increased, and the resistivity decreased as the deposition temperature increased from 80 to 140 °C. The field effect mobility, on/off current ratio and threshold voltage of OITFTs with ZnO active layer deposited at 100 °C were found to be 0.37 cm²/V·s, 5×10² and 5 V, respectively.     

工艺参数对磁控溅射制备 TiO2 薄膜结晶性的影响

目的探究TiO2薄膜结晶性与工艺参数之间的规律。方法采用直流反应磁控溅射法,改变工艺条件(样品位置、溅射功率、氧气分压、是否开转架、沉积温度以及是否退火),在普通载玻片基底上制备TiO2薄膜,并利用XRD和SEM对不同工艺参数下获得的TiO2薄膜进行分析。结果在靶基距固定的情况下,仅改变样品悬挂的上下位置时,薄膜的结晶性差别不大。随着溅射功率在一定范围内增大,薄膜的结晶性越来越好(趋于锐钛矿晶型)。与氧气分压为5%时相比,10%时的薄膜结晶性更优;与开转架时相比,不开转架时薄膜的结晶性更优。沉积温度在300,350℃两者之间变化时,对薄膜的结晶性影响不大。退火后薄膜的结晶性优于未退火薄膜。结论样品位置、沉积温度对于TiO2薄膜的结晶性影响不大;氧气分压、是否开转架对TiO2薄膜的结晶性有一定影响;溅射功率、退火与否对TiO2薄膜的结晶性影响较大,并且退火后出现金红石相。     

透明导电薄膜ZnO:Al(ZAO)的性能及其在有机发光二极管中的应用

研究了ZAO透明导电薄膜的微观组织结构、化学成分及其电学光学特性.结果表明,多晶ZAO薄膜呈柱状晶并具有(002)面择优取向, c轴晶格常数大于0.52000 nm;ZAO薄膜不同微区之问的成分不均匀导致了电学性能的不均匀; ZAO薄膜的电阻率和在可见光区的平均透射率分别为1.39×10-4 Ω·cm和80.8％.其透射率和吸收率曲线均具有明显的波动性,该波动性影响以ZAO为阳极的有机发光二极管的发射光谱,在5.38 A/m2电流密度下二极管的发光效率大于2 cd/A.     

Effects of residual stress distribution on the cracking of thick freestanding diamond films produced by DC arc jet plasma chemical vapor deposition operated at gas recycling mode

Chemical vapor deposited diamond thick films for electronic and optical applications must be released without cracks from substrates as freestanding wafers. In the present investigation, the residual stress distribution of diamond thin films deposited by DC arc jet plasma chemical vapor deposition (CVD) at gas recycling mode was analyzed based on wave number shifts in their Raman spectra. The results show that residual compressive stress concentrates at the film's edge, and this residual stress increases with the increase in deposition temperature. Experimental observation also showed that cracks initiated at the edge of the diamond thick wafer and then propagated towards the center. Effects of the residual stress distribution on diamond thick films detachment were discussed. To release the residual stress, sandwich structure was designed and the metal interlayer was inserted between the diamond films and the substrate. Thick freestanding diamond films (more than 1 mm thick, 60 mm in diameter) were produced by DC arc jet plasma CVD process using Mo substrate with Ti interlayer.     

Zinc oxide (ZnO) grown on flexible substrate using dual-plasma-enhanced metalorganic vapor deposition (DPEMOCVD)

This study investigates the temperature dependence of zinc oxide (ZnO) grown on polyestersulfone (PES) flexible substrates using the dual plasma-enhanced metal–organic chemical vapor deposition (DPEMOCVD) system. The proposed method uses a direct voltage (DC) and radio-frequency (RF) plasma system. The group-VI precursor, oxygen (O₂), can be completely ionized by the DC plasma system. The effect of optimal DC plasma power on ZnO thin films is thoroughly investigated using X-ray diffraction (XRD). The experimental results indicate that the crystalline structure and optical and electrical properties of ZnO thin films grown on PES substrates are dependent on the deposition temperature. The optimum deposition temperature for ZnO thin films deposited on PES substrates is 185 °C, whereas the DC and RF plasma power is 1.8 W and 350 W, respectively. Additionally, the wettability characteristic regarding the UV irradiation time was assessed by measuring the water contact angle. Under the UV irradiation for 60 min, the ZnO film grown at 185 °C represents a low contact angle of 5°, which approaches to a superhydrophilic surface.     

氧化锌铝的典型性能与研究进展

氧化锌铝是一种具有广阔应用前景和发展潜力的复合氧化物半导体材料。介绍ZAO材料的透明导电性、光致发光和红外发射等典型性能;讨论溶胶-凝胶法、水热法、沸水回流法和共沉淀法等粉体制备方法;阐述ZAO靶材的制备方法;分析溶胶-凝胶、金属化学气相沉积、磁控溅射、脉冲激光沉积和热喷雾分解等ZAO薄膜的制备技术;最后指出ZAO的发展方向。     

氧化铱薄膜的制备及其导电机理研究

采用脉冲激光沉积技术在Si(100)衬底上制备了高导电的IrO2薄膜,重点研究了退火前后其电学性能和微观结构的变化规律。采用X射线衍射(XRD)、原子力显微镜(AFM)、光电子能谱(XPS)和四探针法对退火前后IrO2薄膜的结构和电性能进行了表征,并利用霍尔效应研究了IrO2薄膜的导电机理。结果表明:IrO2薄膜在空气中退火后,导电性能得到提高,其中在750℃退火的电阻率达到最小值37μΩ.cm。在25～500℃范围内,IrO2薄膜的高温电阻率随着温度的升高呈线性关系逐渐增大,呈现出类似金属的导电特征。在250～400℃沉积的IrO2薄膜载流子的类型为p型;沉积温度较高(500℃)或在更高温度退火处理后,IrO2薄膜载流子的类型为n型,其导电机理以电子导电为主。     

The mechanism of low temperature deposition of crystalline anatase by reactive DC magnetron sputtering

It has been reported that TiO₂ film deposition by direct current (DC) magnetron reactive sputtering can occur according to the mechanism proposed by the theory of charged clusters (TCC). In the current study, the TCC was used to explain the mechanism of low temperature TiO₂ crystalline thin film growth. Highly oriented anatase thin films were deposited on unheated substrates. The degree of crystallinity of the thin film was found to depend on the cluster size and its crystallinity as well as the charging efficiency in the reactor. Larger clusters tend to be crystalline. These produce amorphous (nanocrystalline) films. Smaller clusters tend to be amorphous and adopt the structure of clusters already deposited to produce an ordered crystalline film. Increasing the substrate-to-target distance increased the cluster size. In addition, the charge density decreased as the target to substrate distance was increased. Clusters of <2 and 3 nm in diameter were observed at a substrate-to-target distance of 50 and 250 mm, respectively, which correspondingly produced crystalline and amorphous films. The DC power level did not appear to have a large effect on the cluster size nor did it affect the degree of crystallinity of the resulting thin film. The main factors affecting whether or not a crystalline film is deposited are the cluster size and the charge density in the reactor.     

The effect of gallium concentration and substrate temperature on the properties of Ga-Doped ZnO thin films sputtered from powder compacted target

Gallium-doped zinc oxide films with an average thickness of 300 nm were grown on corning glass 1737 substrate by radio frequency (RF) magnetron sputtering using powder compacted target with Ga concentrations of 0 wt.%, 2 wt.%, and 4 wt.%. The structural, optical and electrical properties of the films were investigated. During sputtering, deposition temperature was varied from room temperature to 200°C in 50°C intervals. All films were polycrystalline, having a preferred growth orientation with thec-axis perpendicular to the substrate. By increasing Ga concentration and substrate temperature, the peak height corresponding to the (002) plane was significantly increased. Columnar structure was clearly observed in the film deposited with a Ga concentration of 4 wt.% regardless of deposition temperature. The lowest resistivity achieved was 4×10⁻³ Ωcm at a Ga concentration of 4 wt.% grown at 200°C. All doped films showed an overall transmittance in the visible spectra of above 90%.     

Study of Electrical,Mechanical, and Tribological Properties of CrN x Thin Films as a Function of Sputtering Conditions

The influences of chemical composition and deposition power on the electrical, mechanical, and tribological properties of sputtered chromium nitride (Cr-N) thin films that can be used for development of cryogenic temperature sensor are investigated. Cr-N thin films were deposited by DC reactive magnetron sputtering technique under various nitrogen gas flows (5-20 sccm) and deposition powers (200 and 250 W). Results of chemical composition showed that films produced with 5 and 10 sccm flow of nitrogen gas were substoichiometric, while at higher flows they were overstoichiometric. The surface morphology investigation showed that grains size and surface roughness increase with nitrogen gas flow, whereas deposition power has an inverse effect on both of these parameters. The electrical results demonstrated that the substoichiometric films had a positive temperature coefficient of resistivity, and the overstoichiometric films showed a negative temperature coefficient of resistivity. The films produced at higher deposition power of 250 W showed higher hardness and lower friction coefficient and scratch volume, while variation of nitrogen gas flow in the range of 5-20 sccm did not affect these properties, significantly.     

Nanocrystalline p-type-cuprous oxide thin films by room temperature chemical bath deposition method

Nanocrystalline cuprous oxide (Cu₂O) thin films were synthesized on amorphous glass substrate by using simple room temperature chemical route namely, chemical bath deposition (CBD) method. The deposition kinetics played important role to get good quality nanocrystalline films with uniform thickness. The structural, surface morphological, optical and electrical properties of the films were investigated. Crystallization and growth processes obtained micro-spherical shaped grains of Cu₂O due to agglomeration of smaller nanoparticles. An optical and electrical characterization was performed to study the optical band gap and type of electrical conductivity of the film.     

基体对硅钼薄膜结构及电学性能的影响

采用射频磁控溅射法在硅基底上制备了硅钼薄膜，并研究了不同基体对薄膜相结构、表面形貌及电学性能的影响。XRD，AFM和SEM分析结果表明，硅和石英玻璃基体上沉积的硅钼薄膜为非晶，而氧化铝基体上沉积的硅钼薄膜为多晶。四探针电阻测试结果表明，随着退火温度的升高，硅基体和氧化铝基体上的硅钼薄膜其方阻逐渐降低，而石英玻璃基体上的硅钼薄膜其方阻却异常增大。     

PREPARATION AND STRVCTURAL EVOLUTION OF TiO_2 THIN FILMS BY LOW PRESSURE MOCVD

1. IntroductionTitanium dioxide (TiO2) films are widely used for electrical and optical applications because of its high dielectric constant, its chemical stability and its high refractive i.de.[1--2].Tioz thin films can be prepared by various thin film deposition techniquesl3--8]. Amongthese techniques, chemical vapor deposition (CVD) is considered as a useful method to deposit high quality thin films with large area uniformity and well--controlled stoichiometry.Crystalline TiOZ exists th…     

Characteristics of ITO films deposited on a PET substrate under various deposition conditions

ITO films, with a thickness of 150 nm to 160 nm, were deposited on an unheated hard coated PET substrate or non-alkali glass substrate via dc magnetron sputtering. Depositions were carried out under the following various conditions: total gas pressure (P_tot), dc sputtering power, target — substrate (T-S) distance, and O₂ or H₂ addition ratio. The ITO coated on the PET substrate showed relatively lower resistivity than that of the ITO coated on a glass substrate. Relatively small changes in the resistance (ΔR/R₀=0.4) of the films were obtained for each deposition condition for the ITO/PET deposited under a sputtering power of 70 W, P_tot of 0.5 Pa, and T-S of 50 mm. It has been confirmed that the results of the electrical property showed concurrence with the results of the bending test. Specifically, the films that have a good electrical property showed only a small change in resistance to the increasing cycle number for each deposition condition. Therefore, it can be assumed that the increased resistance of the ITO films could be due to the formation of micro defects such as micro-cracks and the micro detachment of the ITO film from the flexible PET substrate.