高体积分数SiC_p/6063Al复合材料与可伐合金的真空钎焊工艺研究

研究了增强相体积分数为55%的Si Cp/6063Al复合材料与可伐合金的真空钎焊,分析了钎焊温度和复合材料表面不同镀层对接头剪切强度的影响规律、接头显微组织以及显微硬度分布特征。结果表明,钎焊温度对接头的剪切强度影响很大,针对复合材料表面不同的镀层,其变化规律不一样。采用Ag57.6-Cu22.4-In10-Sn10钎料,在真空度为6.5×10-3Pa,钎焊温度为600℃并保温30 min时,无镀层的复合材料和可伐合金之间可获得最大剪切强度为61.4 MPa的接头。钎料无论对可伐合金,还是对镀镍层、镀铜层以及裸露的复合材料,其润湿性都较好。钎料与可伐合金界面区的硬度要比可伐合金中的硬度大,钎料与复合材料界面区的硬度随钎焊温度的升高而增加。     

SiCp/LY12复合材料的真空钎焊

在钎焊温度高于SiCp/LY12复合材料起始熔融温度的条件下,采用Al-28Cu-5Si-2Mg钎料在真空中仍能实现对SiCp/LY12复合材料的钎焊连接.研究结果表明:SiCp/LY12复合材料的熔化特性、快速的钎焊热循环和钎料中含合金元素Mg是实现对SiCp/LY12复合材料的钎焊连接的主要因素.分析了SiCp/LY12复合材料钎焊连接强度的影响因素和界面特征.提高液态钎料对SiC的润湿性、降低连接区的弱连接比例、减少过渡到钎缝中的SiC颗粒,是改善钎焊连接强度的重要途径.     

高体积比SiC_p/6063Al复合材料表面预置钛膜及真空钎焊分析

以增强相体积比为60%的Si Cp/6063Al复合材料为母材,首先在母材上磁控溅射钛膜,然后在580℃保温40 min的条件下,采用Al-Si-Mg共晶钎料对复合材料进行真空钎焊.利用扫描电镜、EDS局部能谱分析和XRD衍射的方法对接头的界面组织及断口形貌进行了研究.结果表明,活性钛膜提高了钎料对母材的润湿性,钎焊过程中钎料与镀层、镀层与母材基体界面处均形成了过渡层,且钎料与Si C颗粒间形成致密连接,并在过渡层中发现了Ti C0.981新相.     

铝硅镁钎料真空钎焊SiC_p/Al-MMCs与可伐合金的工艺与性能研究

研究了增强相体积分数为55%的Si Cp/Al-MMCs与可伐合金的真空钎焊,分析了钎焊温度和复合材料表面镀层对接头性能的影响规律。结果表明,Al-12.0Si-1.5Mg-4.0Ti钎料在真空条件下能很好地润湿55%Si Cp/Al-MMCs和可伐合金,合适的钎焊工艺参数为:复合材料表面镀铜、真空度6.5×10-3Pa、钎焊温度590℃、保温时间30 min,接头最大剪切强度可达64.9 MPa。当钎焊温度从570℃增加到590℃时,接头的剪切强度和显微硬度都逐渐增加。复合材料表面镀铜会显著增加钎缝以及界面区域的显微硬度。复合材料表面镀层会对接头剪切强度产生影响,在590℃以下钎焊时,无镀层的复合材料和可伐合金接头的剪切强度较高。而当钎焊温度达到590℃时,表面镀铜的复合材料与可伐合金接头的剪切强度最高。     

表面镀镍对Ag基钎料钎焊YG6X与GH4169的影响

针对AgCuNiMn系钎料在GH4169合金表面的流动性能较弱的问题,在YG6X/AgCuNiMn/GH4169钎焊体系中,通过对比钎料在有无镍镀层的GH4169表面的润湿形貌及最终润湿角的大小,分析了GH4169表面镀镍对钎料在GH4169表面润湿性能的影响;并借助SEM对有镍镀层钎缝组织进行分析,结合接头拉伸性能试验揭示了镀镍层对接头微观组织与力学性能的影响。研究结果表明,在GH4169表面镀镍能显著提高钎料在合金表面的润湿铺展性能,镀镍后AgCuNiMn钎料在合金表面润湿角最小可达4°;在钎料与高温合金界面处存在约20μm的镍层反应区,该反应区在提高钎料润湿性能的同时一定程度上阻碍了高温合金母材中Fe、Cr与Nb等元素向钎缝区域扩散,从而降低了接头的拉伸强度,平均抗拉强度为631.6 MPa。     

SiCp/Cu复合材料的真空钎焊

对冷压烧结结合热挤压工艺制备的SiC/Cu复合材料,选用Ti和AgCuTi为钎料,采用不同的工艺进行真空钎焊试验.用金相显微镜和扫描电镜对母材和钎焊接头的剪切断口形貌进行分析,利用电子万能试验机对钎焊接头进行抗剪强度测试,将接头抗剪强度与母材抗剪强度进行对比以评判钎缝质量.结果表明,用Ti为钎料连接SiCp/Cu复合材料的连接状况要优于AgCuTi钎料,且连接温度850℃,保温时间为20 min时,抗剪强度最大为70.5 MPa,与母材抗剪强度相当;随着铜基复合材料中SiCp含量不断增加,钎焊接头室温抗剪强度不断下降,当SiCp含量超过10%时,抗剪强度快速下降.     

C/C复合材料与TC4钎焊接头的组织与断裂形式分析

在钎焊时间10 min,钎焊温度820～900℃的条件下,采用AgCu钎料对C/C复合材料和TC4进行了钎焊试验.利用扫描电镜、X射线衍射分析仪、EDS能谱分析仪对接头的界面组织及断口形貌进行了研究.结果表明,C/C复合材料与TC4连接接头的界面结构为C/C复合材料/TiC C/TiCu/Ag(s.s) Cu(s.s) Ti3Cu4/Ti3Cu4/TiCu/Ti2Cu/Ti2Cu Ti(s.s)/TC4.由压剪试验测得的接头抗剪强度可知,在钎焊温度850 ℃,保温时间10 min的钎焊条件下,接头获得的最高抗剪强度达到38 MPa.接头的断口分析表明,接头的断裂位置与被连接处碳纤维方向和钎焊温度有关.当碳纤维轴平行于连接面时,断裂发生在复合材料中.当碳纤维轴垂直于连接面时,若钎焊温度较低,断裂发生在C/C复合材料/钎料界面处;若钎焊温度较高,断裂主要发生在C/C复合材料/钎料界面和钎料/TC4界面处.     

Cf/SiC复合材料与Ti合金的Ag-Cu-Ti-TiC复合钎焊

以Ag-Cu-Ti-TiC复合钎料为中间层,在适当的工艺参数下真空钎焊Cf/SiC复合材料与Ti合金.利用SEM、EDS和XRD分析接头的微观组织结构,利用剪切实验检测接头的力学性能.结果表明:钎焊时,借助液态钎料,复合钎料中的Ti与Cf/SiC复合材料反应,在Cf/SiC复合材料与连接层界面形成Ti-Si-C、Ti-Si和少量TiC化合物的混合反应层;复合钎料中的Cu与Ti合金中的Ti发生互扩散,在连接层与Ti合金界面形成不同成分的Cu-Ti化合物过渡层;钎焊后,形成TiC颗粒强化的致密复合连接层,TiC的加入降低了接头的残余热应力,Cf/SiC/Ag-Cu-Ti-TiC/TC4接头的剪切强度明显高于Cf/SiC/Ag-Cu-Ti/TC4接头的.     

TiC/NiCr金属陶瓷与1Cr13不锈钢的真空钎焊

以CuMnNi和CuMnCo合金为钎料,采用真空钎焊方法实现了TiC/NiCr金属陶瓷与1Cr13不锈钢的牢固连接.研究了钎料类型及钎焊工艺对钎缝接头力学性能与微观结构的影响.结果表明,采用CuMnNi钎料时在1 050 ℃保温30 min的钎焊工艺下获得了最高界面抗剪强度为338 MPa,而采用CuMnCo钎料时在1 050 ℃保温60 min的钎焊工艺下获得了最高界面抗剪强度为274 MPa,剪切断口发生在金属陶瓷靠近钎缝侧.良好的界面扩散互溶是获得较高界面连接强度的主要原因.并通过扫描电镜(SEM)、X射线衍射分析等方法对钎焊接头微观组织、剪切断口进行了观察和分析.     

高体积分数SiC_p/Al电子封装复合材料的钎焊综述（英文）

高体积分数SiC_p/Al复合材料作为电子封装材料使用日益流行,其钎焊具有重要的实际意义。近来,一些新钎料合金和工艺被开发用于高体积分数SiC_p/Al复合材料的钎焊。本文回顾了SiC_p/Al复合材料的物理力学性能和制备工艺,综述了应用于高体积分数SiC_p/Al复合材料的合金钎料、钎焊工艺及其接头微结构与性能,旨在进一步理解它们之间的关联性,以优化接头性能与可靠性。往Al-Si合金中添加Cu、Mg、Ni等合金元素有助于提高钎料合金和钎焊接头的使用性能,如可优化钎料合金的应用温度、接头界面结合和焊缝强度。而表面金属化和超声波振动两种钎焊辅助工艺可通过避免或去除复合材料表面的Al_2O_3和SiO_2氧化膜来改善合金钎料的钎焊性。最后指出,需要进一步加强对合金钎料的优化设计、表面金属化工艺以及焊料/涂层/基材体系之间的润湿性和界面行为的研究。     

Structural, mechanical and corrosion properties of TiOxNy/ZrOxNy multilayer coatings

Results on the deposition and characterization of TiO_xN_y/ZrO_xN_y multilayers, with bilayer periods of 20 and 400 nm, are presented. The coatings were deposited on TiNiNb alloy substrates by the pulsed magnetron sputtering method. The elemental composition, hardness, adhesion and corrosion resistance of the coatings were analyzed.As resulted from the XPS analysis, the individual layers consisted of a mixture of titanium or zirconium oxynitrides and corresponding oxides. X-ray analysis revealed that the coatings were amorphous. Only slight differences between the microhardness and adhesion values of the coatings with small and large bilayer period Λ were found. The experiments also showed that the multilayered coatings improved the corrosion resistance of the uncoated alloy and reduced the amount of ion release in artificial body fluids.     

Hydrothermal synthesis of superconductors Ba1−xKxBiO3 and double perovskites Ba1−xKxBi1−yNayO3

Superconductors Ba_1−xK_xBiO₃ and body-centered double perovskites Ba_1−xK_xBi_1−yNa_yO₃ have been selectively synthesized by a facile hydrothermal route. The appropriate ratio and adding sequence of initial reagents, alkalinity, reaction temperature and time are the critical factors that influence the crystal growth of the compounds. The purity and homogeneity of the crystals were detected by the ICP, SEM, EDX and TEM studies. Magnetic measurements show that the superconducting transition temperatures T_C of Ba_1−xK_xBiO₃ decrease from 22 K (for x = 0.35) to 8 K (for x = 0.55) with increasing the K doping level.     

MOCVD growth and characterizations of BxAl1−xAs and BxAl1−x−yInyAs alloys

Zinc-blende B_xAl_1−xAs and B_xAl_1−x−yIn_yAs alloys have been grown on exactly oriented (0 0 1)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The influence of susceptor coating, growth temperature and gas-phase boron mole fraction on boron incorporation into AlAs has been comprehensively investigated. It has been found that boron incorporation into AlAs could be enhanced and the optimal growth temperature range of B_xAl_1−xAs alloys changed from 580 °C to 610 °C when SiC-coated graphite susceptors were replaced by the non-coated ones. In this study, the maximum boron composition x of 2.8% was achieved for the pseudomorphically strained B_xAl_1−xAs alloys. AFM measurements show that RMS roughness of B_xAl_1−xAs alloys increased sharply with the increase of gas-phase boron mole fraction. Raman spectra of B_xAl_1−xAs alloys show a linear increase of the BAs shift with boron composition x. Based on BAlAs deposition, bulk B_xAl_1−x−yIn_yAs (x = 1.9%) quaternary alloy was grown lattice-matched to GaAs successfully. Moreover, 10-period BAlAs/GaAs and BAlInAs/GaAs MQW heterostructures were also demonstrated.     

生物医用NiTi形状记忆合金腐蚀研究进展

镍钛形状记忆合金(NiTi-SMA)具有较好的耐腐蚀和机械性能,在口腔和临床医学中有着大量而广泛的应用。NiTi-SMA腐蚀后释放Ni²⁺会引发细胞毒性和过敏反应,进一步提高NiTi-SMA的耐蚀性是目前生物医学材料领域发展的核心之一。本文对近年来国内外有关口腔医学和临床医学中常用NiTi-SMA的腐蚀研究现状进行了总结,同时也对NiTi-SMA增材制造及表面改性技术进行了评述,以期为开发高性能抗腐蚀生物医用NiTi-SMA提供一定的指导意义。     

Li掺杂Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li(1/7-x))O3高熵陶瓷的制备及介电性能研究

近年来,在高熵合金基础上发展起来的高熵陶瓷逐渐引起了研究者的广泛关注,其出现为开发高性能的无机非金属材料提供了新的设计思路。本文采用固相法制备了BaMO3基钙钛矿型高熵陶瓷Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li(1/7-x))O3 (x = 0, 2.3%, 5.3%, 8.3%, 11.3%),并研究了Li含量对高熵陶瓷物相结构、微观形貌及介电性能的影响。结果表明,Li含量对陶瓷结构的影响不大,陶瓷均保持立方钙钛矿结构,且无杂相产生;陶瓷的晶粒尺寸相对较均匀。当x = 0时,即B位七元等摩尔比Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li1/7)O3高熵陶瓷,其介电常数达到了最大值2920 (@100 Hz),相较于已报道的不掺Li的六元高熵钙钛矿陶瓷Ba(Ti1/6Sn1/6Zr1/6Hf1/6Nb1/6Ga1/6)O3提升了近50倍。     

Magnetic phase diagrams of the TbRh2−xPdxPdxSi2 and TbRu2−xPdxSi2 systems

The a.c. susceptibility and high field magnetization on TbRh_2−xPd_xPd_xSi₂ and TbRu_2−xPd_xSi₂ compounds were investigated up to 140 kOe. The (T,x) magnetic phase diagrams were determined. For both systems, an increase in the Pd content causes a decrease in the Néel temperature and changes the magnetization curves.     

Si3N4/Ti/Cu/Ni/Cu/Ti/Si3N4二次部分瞬间液相连接强度

采用Ti/Cu／Ni中间层对Si3N4陶瓷进行二次部分瞬间液相(PTLP)连接，研究连接工艺参数对Si3N4／Ti/Cu／Ni连接强度的影响，同时研究了连接强度随试验温度的变化规律。结果表明，在该试验条件下，室温连接强度随着二次连接温度的提高和二次保温时间的延长而提高，改变连接工艺参数对Si3N4／Ti/Cu／Ni二次PTLP连接界面反应层厚度无明显影响；连接强度在试验温度400℃时达到最大，随后随试验温度升高，连接强度降低，但在800℃前，其高温强度具有很好的稳定性。     

High strength and good ductility of casting Al-Cu alloy modified by PrxOy and LaxOy

A modified Al-Cu alloy with high tensile strength and ductility of about 574.0 MPa and 10.4%, respectively, was obtained by adding multiple rare earth oxides (Pr_xO_y and La_xO_y) as modifier. Compared with the unmodified Al-Cu alloy, the tensile strength and ductility of the modified sample were increased by 24.3% and 42.5%, respectively. The improvement both in the strength and ductility may attribute to the finer crystal grains and dendrites, more homogeneously distributed θ′ phase precipitates and the intermetallic compounds formed at the crystal grain boundaries as well as in the space of the dendrites.     

Thermoelectric properties of Sn1−x−yTiySbxO2 ceramics

Thermoelectric properties of Sn_1−x−yTi_y Sb_xO₂ ceramics were investigated in detail. The addition of Sb into SnO₂ matrix increased the electric conductivity, σ. The increase in the σ value should be caused by the increase in the carrier concentration. The Seebeck coefficients of all the samples were negative, which means that these samples have n-type conduction. The samples of this study have porous structure. The maximum Z value of all the samples measured in this study was 2.4 × 10⁻⁵ K⁻¹.     

Physical properties of Mo6−xRuxTe8 and Mo6Te8−xSx

A series of the Chevrel phases, Mo_6−xRu_xTe₈ and Mo₆Te_8−xS_x (x=0, 1, 2), has been prepared and the various physical properties, such as the elastic modulus, Debye temperature, and electrical resistivity, have been evaluated. The relationships between several properties of the compounds have also been studied. Young’s modulus and Debye temperature of Mo_6−xRu_xTe₈ and Mo₆Te_8−xS_x increase with increasing x value. The relationship between the Vickers hardness and Young’s modulus shows ceramic characteristics for Mo_6−xRu_xTe₈, while they show glass-like characteristics for Mo₆Te_8−xS_x. The electrical resistivities of Mo_6−xRu_xTe₈ and Mo₆Te_8−xS_x increase with increasing x value.