原位TiC/7075Al基复合材料的界面结构特征

采用原位反应近液相线铸造方法制备含有少量原位TiC颗粒的7075铝基复合材料,通过透射电镜观察复合材料中的原位TiC颗粒的形貌,并研究原位TiC颗粒与7075Al基体之间的界面微观结构.结果表明,原位TiC颗粒尺寸分布于亚微米级,形貌呈近球形,在复合材料界面处7075Al基体与原位TiC颗粒具有Al(200)//TiC(200)、Al基体(216)∥TiC(111)的晶体学位向关系并形成共格界面,界面干净,无任何反应物,Al基体的(200)晶面优先沿原位TiC颗粒的(200)晶面生长,其(216)晶面优先沿原位TiC颗粒的(111)晶面生长.     

原子密排程度对单晶高温合金组织的影响

采用籽晶法制备了SRR99镍基单晶高温合金,研究最不密排(110)晶面、次密排(100)晶面和最密排(111)晶面的组织结构。结果发现,3个晶面的枝晶形貌和γ′相形貌都明显不同,共晶组织和碳化物差异不明显。对于3个晶面的枝晶形貌,(100)晶面的枝晶为对称的“+”型,(110)晶面的枝晶为不对称的“+”型,(111)晶面的枝晶为对称的“×”型。对于3个晶面的一次枝晶间距,(110)与(111)晶面的一次枝晶间距小于(100)晶面的。对于3个晶面的γ′相形貌,(100)晶面的γ′相为不规则的立方体,(110)晶面的γ′相为不规则的三棱柱,(111)晶面的γ′相为不规则的三棱锥。     

晶面活性对丁二酸调控α-半水硫酸钙晶体形貌的影响

晶体形貌决定了α-半水硫酸钙(α-HH)的物化性质与应用领域。本文采用第一性原理计算和Wulff构型理论揭示了晶面活性差异对丁二酸调控α-HH晶体形貌的影响。结果表明：α-HH的(204)晶面是晶体形貌调控的关键晶面。(204)晶面上Ca²⁺连续分布且密度高，导致(204)晶面活性高，有利于媒晶剂作用。丁二酸以O—Ca离子键形式环状吸附在α-HH的(204)晶面。α-HH的高活性晶面优先被媒晶剂吸附并抑制，使晶体形貌沿高活性晶面方向缩短，过量的媒晶剂使晶体各晶面生长均被抑制，实现晶体形貌调控。     

生长铜膜中孪晶形成与出现几率的分子动力学模拟

运用分子动力学和静力学方法对(111)生长铜膜中孪晶形成的原子过程与能量进行了模拟研究.所用的原子间相互作用势为Finnis-Sinclair型镶嵌原子法(EAM)势.模拟和计算分析结果表明,(111)生长铜膜表面沉积原子在不同局部可形成正常排列的fcc畴或错排的hcp畴;沉积原子处于hcp位置时体系的能量比fcc位置时要高,其增量决定了孪晶面出现几率.沉积原子错排能还受相邻{111}孪晶面的影响,其间距小于3个原子层厚时,沉积原子错排能与不形成孪晶的Al晶体表面沉积原子错排能相当,此时形成孪晶面的几率极低;随间距的增加,表面沉积原子错排能迅速降低,在间距达到约12个原子层厚以后,降到略低于完整Cu晶体{111}表面的沉积原子错排能,这表明此时出现孪晶面的几率比在完整晶体表面形成一个新的孪晶面的几率要大.     

电流密度对电解铜箔组织与性能的影响

研究了电流密度对超薄电解铜箔的组织与性能的影响。结果表明,铜箔毛面的晶粒尺寸、粗糙度随电流密度的增大而增大。电流密度的增大,有利于(111)和(220)晶面的快速生长,但随着电流密度的进一步增大,(220)晶面的生长速度明显快于(111)晶面,最终(220)晶面生长占优。抗拉强度和伸长率受到尺寸效应影响。(111)织构能提升铜箔的抗拉强度;(220)织构会降低铜箔的抗拉强度,但提高铜箔的伸长率。当电流密度超过一定程度时,铜箔会出现"过烧"、"粉化"现象,导致铜箔伸长率、抗拉强度显著下降。     

强磁场下铜电沉积层表面形貌及织构的研究

利用SEM和XRD研究了无磁场和2 T～10 T强磁场中电流密度和磁感应强度对铜电沉积层表面形貌及择优取向的影响.结果表明无磁场下,表面晶粒随电流密度增加而增大,同时伴随氢气析出而导致气孔出现,施加10 T磁场后,表面晶粒随电流密度增加呈分裂细化趋势,同时氢气析出被抑制.强磁场施加使(220)晶面织构得到抑制,而(111),(200),(311)等晶面的织构得到增强,但无论是否施加磁场,在200A/m2～630A/m2的电流密度下,铜电沉积层仍保持(220)的优先生长方向.     

强磁场下铜电沉积层表面形貌及织构的研究

利用SEM和XRD研究了无磁场和2 T～10 T强磁场中电流密度和磁感应强度对铜电沉积层表面形貌及择优取向的影响.结果表明:无磁场下,表面晶粒随电流密度增加而增大,同时伴随氢气析出而导致气孔出现,施加10 T磁场后,表面晶粒随电流密度增加呈分裂细化趋势,同时氢气析出被抑制.强磁场施加使(220)晶面织构得到抑制,而(111),(200),(311)等晶面的织构得到增强,但无论是否施加磁场,在200A/m2～630A/m2的电流密度下,铜电沉积层仍保持(220)的优先生长方向.     

〈111〉生长铜膜中孪晶形成与出现几率的分子动力学模拟

运用分子动力学和静力学方法对〈111〉生长铜膜中孪晶形成的原子过程与能量进行了模拟研究.所用的原子间相互作用势为Finnis-Sinclair型镶嵌原子法(EAM)势.模拟和计算分析结果表明,〈111〉生长铜膜表面沉积原子在不同局部可形成正常排列的fcc畴或错排的hcp畴;沉积原子处于hcp位置时体系的能量比fcc位置时要高,其增量决定了孪晶面出现几率沉积原子错排能还受相邻{111}孪晶面的影响,其间距小于3个原子层厚时,沉积原子错排能与不形成孪晶的Al晶体表面沉积原子错排能相当,此时形成孪晶面的几率极低;随间距的增加,表面沉积原子错排能迅速降低,在间距达到约12个原子层厚以后,降到略低于完整Cu晶体{111}表面的沉积原子错排能,这表明此时出现孪晶面的几率比在完整晶体表面形成一个新的孪晶面的几率要大.     

DC Arc Plasma Jet CVD自支撑金刚石膜表面形貌的研究

本文采用30kW级直流电弧等离子体喷射法沉积自支撑金刚石膜,研究了大进气量条件下不同的甲烷浓度对金刚石膜的表面形貌及晶面取向的影响,当甲烷浓度达到一定程度时,出现纳米二次晶的形核,晶粒细化,微米金刚石转变成为纳米金刚石.同时不同的氩氢配比对金刚石膜的表面形貌也产生一定的影响.在高甲烷浓度的情况下,可以得到一种具有(111)取向的微米级金刚石膜.结果表明,随着甲烷浓度和氩氢比(Ar/H2)的增加,金刚石膜表面晶粒尺寸是呈逐渐减小趋势的,此外,通过控制甲烷浓度可以得到(111)晶面的高取向金刚石膜,当甲烷浓度为20%时,金刚石膜表面晶粒的(111)晶面可以达到高取向.     

亚微米活化Mo-15Cu合金晶间反应机制（英文）

为了研究具有亚微米组分的钼铜粉末烧结时的晶间反应机制,采用亚微米活化层法制备了一种具备晶间反应层的钼铜复合材料。采用X射线衍射仪(XRD)、扫描电镜(SEM)、能谱仪(EDS)、透射电镜(TEM)、高分辨透射电镜(HRTEM),对Mo-15Cu合金组织形貌、连接和结构特征进行了表征。研究了亚微米活化层对钼铜复合材料晶间反应的影响。结果表明,添加8%(质量分数)亚微米粉,可形成厚度约0.5μm纳米活化层。Mo亚微米颗粒通过流动、扩散,改变晶间反应机制,形成了真正意义上的晶间反应层,厚度约为5 nm,实现了冶金结合。     

Off-axis texture in nanostructured Ti1 − xAlxN thin films

Standard θ-2θ and pole figure X-ray diffraction techniques were used to study structural properties and preferred orientation of nanostructured TiAlN thin films prepared using cathodic arc deposition. Systematic collection of reflections from lattice planes {111}, {200}, {220}, and {311} showed that the in-plane orientation of crystallites exhibits cylindrical symmetry with random distribution of crystallites, while the out-of-plane growth presents strong texture which is inclined with respect to the surface normal. This brings the crystallographic orientation of fibre texture towards high indices lattice planes (113) and (115) contrary to traditionally grown films that develop a preferred orientation following to low indices close-packed planes (111) and (200). The origin of inclined growth is discussed taking into account the role of crystallographic defects in particular twin faults that develop in the lattice of growing crystal and change the stacking sequences of atom layers.     

Strain-induced anodic dissolution of Cu single crystals—effects of specimen geometry and slip morphology

Specimen geometry with respect to slip deformation and slip morphology have been examined in a study of strain-induced anodic dissolution of Cu single crystals. It has been found that a sample, whose geometry leads to the largest exposure of fresh (111) slip planes onto the original surfaces, shows the largest anodic dissolution on straining. However, the amount and rate of dissolution are unaffected by slip morphology or dislocation density. It has been calculated that approximately seven layers of Cu atoms dissolve from the freshly formed active (111) planes until the planes become inactive.     

Adsorption of boron and its relationship with morphologies of TiC

First-principle calculations were performed to study the adsorption of boron and its relationship with the morphologies of Ti C.It is found that although the adsorption of boron on all the low-index Ti C crystal planes is thermally favorable,it will be adsorbed more easily by C-terminated {111} and {011} planes,while less possible to be adsorbed by {001}.The study of the formation of B–B clusters indicates that the distribution of boron adatoms on C-terminated(111) and {011} planes will be more uniform,and the diffusion of the adatom further confirms the above results.According to the geometry relationship and growth rate of different crystal planes,it is deduced that the adsorption of boron on Ti C will seriously impede the growth of {111} and {011} planes,which can make Ti C grow into hexagonal platelets.     

高强高导Cu-Nb微观复合材料的界面结构

通过集束拉拔技术获得了高强度高电导Cu-Nb微观复合材料,采用SEM及EDS观察分析了4次复合过程中内部Nb芯丝和Cu层的微观形貌变化,Cu/Nb界面的互扩散行为;对不同复合条件下的挤压、拉拔样品,通过XRD测试,表征了芯丝和基体的晶体取向的演变规律;通过HRTEM和反傅里叶变换研究了Cu/Nb的界面结构和晶体学位向关系。研究表明,在极塑性变形条件下,Cu/Nb界面在3次复合出现明显扩散,Cu、Nb逐渐形成丝织构取向,界面存在典型的(111)_(Cu)//(110)_(Nb)取向关系,晶面夹角为18.7°,每6个(111)Cu晶面出现1个晶面错配。     

自生TiCp/Ti复合材料中TiC的生长习性

利用配位多面体生长基元理论研究了自生TiCp/Ti复合材料中TiC的生长习性。TiC晶体的配位多面体生长基元为TiC6。生长基元进入{100}面时为4个棱边同时联结，生长速率最快，不易显露；进入{111}面时为共面联结，生长速率最慢，容易显露。因此，TiC晶体的理想形态为{111} 面为显露面的八面体。TiC晶胚在熔体中生长时，受传热传质过程的影响，6个顶角所处的{100}方向生长速率加快，形态失稳，从{100}方向顶角部位生长出二次枝晶臂，最终形成棱面枝晶状TiC。如枝晶形成时低生长速度的晶面上形成大量的晶体缺陷，则它们的生长速度加快，棱面消失，成为光滑枝晶。     

Understanding of the shape-controlled synthesis of strip shape diamond under high pressure and high temperature conditions

We present the shape-controlled synthesis of strip shape diamond with stretched crystal faces along {100} or {111} direction and larger length-to-radius ratio than the conventional diamond in the designed NiFe-C system at high pressures and high temperatures (HPHT). A series of synthetic experimental results on the strip shape diamonds were obtained at different pressures and temperatures. Under the constant pressure condition, the morphology of the strip shape diamond varied with the increase of temperature obviously. Fourier transform infrared (FTIR) micro spectroscopy and Raman spectroscopy revealed that the various locations of crystal face have different nitrogen impurity concentration, and internal strain and defects in these strip shape crystals. According to these results, it can be concluded that the difference of growth rates at various crystal faces results in different crystal morphologies. Based on the growth characteristics, we suggest that composition segregation of the metal film around the growing crystal induces the formation of strip shape diamond.     

Fabrication of thin copper mesh for electromagnetic interference of display panel by pulse reverse current method and study on the microstructure by small angle neutron scattering

A copper sheet with mesh was mass-produced by continuously combining three techniques, electroforming with pulse-reverse current, transfer technique onto a transparent polyimide (PI) film and oxidation processes. Thiourea as an organic additive in a modified copper sulfate bath changes the reduction potentials of copper complexes, which results in effectively controlling the crystal orientation, surface roughness and microstructure of the copper layer. An electroformed copper layer without thiourea has a relatively rough surface with an average surface roughness of about 144.7 nm, whereas, the copper layers with thiourea have a smooth surface with an average surface roughness in the range of 6.3 to 12.1 nm. The copper layers with thiourea have a preferred orientation of crystal structure such that Cu (111) peak intensity increases, whereas, Cu(220) peak intensity decreases with thiourea addition. Electroforming with a rectangular pulse current density including etching at +640 mAcm^?2 for 1.8 msec and plating at ?160 mAcm^?2 for 4 msec in a modified copper sulfate bath with 200 ppm-thiourea at 25 °C is one of optimum conditions to massproduce a copper mesh sheet roll with 300 ??m pitch, 10 ??m mesh width and thickness, and 200 m long.     

多形性SrSO_4纳米粉体的制备与生长机制

采用化学沉淀法制备出具有不同形貌(片状、柱状和等轴状等)的纳米SrSO_4粉体.采用扫描电镜和X射线衍射仪等对粉体的结构、形貌及生长机制进行了研究.片状SrSO_4粉体厚度约100 nm,片长约200 nm;柱状粉体横向长度为80～150 nm,纵向长度为700～800 nm;等轴状粉体粒径约80 nm.衍射强度对比表明,低能面(002)与(210)晶面相对生长的快慢导致了片状和柱状SrSO_4晶体的形成;而反应物浓度的降低、EDTA的络合以及PEG的分散等环境因素的改变降低了晶体生长驱动力,导致球状SrSO_4晶体的形成.     

超声波对Ta/SiO2/Si基板置换活化法化学镀铜的影响

采用置换活化法,以PdCl2/BOE/HNO3溶液对Ta/SiO2/Si基板进行活化,然后在基板上成功实现化学镀Cu薄膜。应用场发射扫描电子显微镜(FESEM)、X射线衍射(XRD)等方法,研究了活化时间及超声波对化学镀Cu薄膜表面形貌和结构的影响。结果表明,在化学镀Cu过程中没有引入超声波时,随着活化时间由30 s增加到150 s,Cu膜覆盖率逐渐降低;在引入超声波以后,随着活化时间的增加,Cu膜覆盖率始终很高。XRD分析表明,引入超声波以后,Cu(111)和(200)峰的衍射强度明显增加,当活化时间为60 s时,Cu(111)和(200)峰的强度比I(111)/I(200)达到4.53。对具有沟槽的Ta/SiO2/Si基板进行化学镀Cu的结果表明,引入超声波,可以明显改善对沟槽的填充效果     

Formation and growth mechanism of TiC crystal in TiC_p/Ti composites

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