掺Ag含量对金刚石薄膜场发射性能的影响

采用电泳沉积的方法在钛基体上沉积了不同含量Ag纳米颗粒掺杂的金刚石复合薄膜,利用扫描电子显微镜、X射线衍射光谱和拉曼光谱对样品的结构和形貌进行表征,最后进行场发射特性的测试。SEM试验结果表明,制备得到的薄膜连续、致密且纳米颗粒均匀的分布在其中。场发射测试结果显示样品的场发射性能随着复合膜中Ag含量的增加呈现先增强后降低的趋势,在Ag纳米颗粒的掺杂含量为7.5 mg （0.18 g/L）时,复合膜的场发射性能最优。此时,开启电场（E₀）低至1.55 V/μm,在1.96 V/μm的电场强度下可以得到22.69 μA/cm²的场发射电流密度,这表明适量的Ag纳米颗粒掺杂可以显著提升样品场发射性能。同时,文中结合F-N理论进一步讨论了Ag纳米颗粒掺杂含量的变化对金刚石场膜发射性能影响的作用机理。     

金属过渡层增强金刚石薄膜场发射性能的机理研究

以金属钛和钨为过渡层,采用PE-HFCVD法在硅基上制备金刚石薄膜,并对薄膜的场发射特性分析研究。结果表明,金属过渡层对金刚石薄膜场发射性能有显著的增强作用。以金属钨为过渡层时,金刚石薄膜的场发射开启场强为5.4 V/μm,比无过渡层降低了44%;场发射电流密度在电场强度为8.9 V/μm时达到1.48 mA/cm₂。通过对薄膜的结构表征知,场发射性能的增强主要与界面处电子运输势垒的降低及薄膜中sp₂ C含量的增加有关,在界面处及金刚石膜内形成良好的导电通道,使电子更容易运输至薄膜表面,从而表现出优异的场发射性能。     

电泳沉积的钛基菊花状纳米氧化锌阴极场发射特性（英文）

采用水热法制备出菊花状的ZnO纳米线簇,然后利用电泳法将之移植到金属Ti片上,形成均匀的、一定厚度的ZnO纳米薄膜,最后经真空热处理形成ZnO场发射阴极样品。利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对沉积前后的ZnO纳米线簇做了特性鉴定和微结构的表征。对热处理后的阴极样品做了场发射特性测试,发现菊花状纳米ZnO呈现出较低的开启电场2.0 V/μm和较低的阈值电场5.5 V/μm,在场强达到7.5 V/μm时,场发射电流密度为200μA/cm~2,适当地增加涂层厚度可有效提高场发射电流密度及其稳定性,最后探讨了菊花状纳米ZnO的场发射机理。     

氮化镓纳米铅笔与纳米塔制备及优异场发射性能研究

通过化学气相沉积法,用氧化镓和氨气反应成功制备出氮化镓纳米铅笔和纳米塔。通过扫描电镜表征发现氮化镓纳米铅笔分为两个部分:底部是一个大直径的纳米线,顶部是一个小直径的纳米线;氮化镓纳米塔为层状结构。氮化镓纳米铅笔和纳米塔的形成机理是气-液-固机制。场发射性能测试显示氮化镓纳米铅笔的开启电场为2.6 V/μm,纳米塔的开启电场为4.1 V/μm,这使得它们可以用于场发射平板显示及显示装置的冷阴极电子源,它们还可以使用于设计复杂纳米电子器件。     

湿法腐蚀制备Si-TaSi_2场发射阴极阵列的工艺研究

阴极阵列形貌是影响场致发射材料发光性能的关键因素。以Czochralski(Cz)法制备的Si-TaSi2共晶复合材料为场发射阴极材料,采用湿法腐蚀制备Si基TaSi2尖锥型场发射阴极阵列。通过调整腐蚀液配比、腐蚀时间和腐蚀液温度,研究了不同腐蚀条件对Si基TaSi2尖锥形貌及阴极阵列制备的影响,获得了Si基TaSi2尖锥阴极阵列的最佳制备工艺,并对其场发射性能进行了测试。结果表明:在室温17℃,腐蚀液配比v(HF)∶v(HNO3)=1∶4,腐蚀时间15 min下得到了高长径比的TaSi2尖锥,阵列具有较好的场发射性能,开启场强为3.84 V/μm。     

沉积参数对Mo-Re合金基体上沉积金刚石薄膜的影响

采用热丝化学气相沉积法(HFCVD),以甲烷和氢气为反应气体,在综合性能良好的Mo-40%Re(摩尔分数)合金基体上沉积金刚石薄膜.采用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)和显微激光拉曼光谱仪(Raman)分别对金刚石薄膜相组成、表面形貌、晶粒大小和质量等进行检测分析,研究CVD沉积参数,如基体温度(θs)、碳源浓度(R,Cn4的体积分数)和沉积压强(p),对金刚石形核、生长和金刚石成膜的影响.结果表明在合适的基体预处理条件下,当θs=750℃,R=-3%,p=3.5kPa时,薄膜平均线生长速率高达1μm/h,得到的金刚石膜完整致密,晶粒大小均匀,纯度较高,具有明显的(111)织构.     

Study on Field Emission Characteristics of Ti-based Chrysanthemum-like Nano-ZnO Cathode by Electrophoresis Deposition

采用水热法制备出菊花状的ZnO纳米线簇,然后利用电泳法将之移植到金属Ti片上,形成均匀的、一定厚度的ZnO纳米薄膜,最后经真空热处理形成ZnO场发射阴极样品。利用X射线衍射仪（XRD）和扫描电子显微镜（SEM）对沉积前后的ZnO纳米线簇做了特性鉴定和微结构的表征。对热处理后的阴极样品做了场发射特性测试,发现菊花状纳米ZnO呈现出较低的开启电场2.0 V/μm和较低的阈值电场5.5 V/mm,在场强达到7.5 V/mm时,场发射电流密度为200 mA/cm2,适当地增加涂层厚度可有效提高场发射电流密度及其稳定性,最后探讨了菊花状纳米ZnO的场发射机理。     

渐变掺氮碳纳米管场的发射性能

以二甲苯/吡啶为碳/氮源,二茂铁为催化剂,在800 ℃下,由化学气相沉积法(CVD)制得了直径为10～30 nm的掺氮碳纳米管(CNT)阵列.用扫描电镜、透射电镜和拉曼光谱对其形貌和结构进行了表征.发现该碳管阵列具有竹节状结构,其中的氮含量沿碳管管径方向呈渐变趋势.随着碳管中氮含量的增加,竹节长度减小.研究了阵列的场发射性能,结果表明该碳管阵列是一种优秀的场发射材料:开启场强为0.37 V/μm,阈值场强为0.9 V/μm,场增强因子为37700.     

不同过渡层对钢基金刚石薄膜的影响

采用超高真空热丝化学气相沉积(HFCVD)系统,以甲烷和氢气为反应气体,在高速钢W18Cr4V基体上利用3种不同的过渡层(WC、Cr、WC/Cr)制备金刚石薄膜。采用场发射扫描电子显微镜(FE–SEM)、X射线衍射仪(XRD)、显微激光拉曼光谱仪(Raman)以及洛氏硬度计对过渡层和金刚石薄膜进行检测分析,研究了不同过渡层对金刚石薄膜形貌质量和附着性能的影响。结果表明,3种过渡层均可以有效减少钢基中Fe对金刚石薄膜的负面影响,提高金刚石的形核率;其中,采用WC/Cr过渡层时膜基间残余应力最小,仅为0.25 Gpa,附着性能最好。     

YG6硼化综合处理后基体温度对金刚石薄膜的影响

采用热丝化学气相沉积(HFCVD)方法,以甲烷和氢气为反应气体,在经950℃×6h硼化综合处理后的YG6(WC–6%Co)硬质合金基体上制备了金刚石膜。使用场发射扫描电子显微镜(FESEM)和X射线衍射仪(XRD)对金刚石薄膜进行检测分析、对比,研究了基体温度对金刚石薄膜形貌和生长织构的影响,比较了硼化综合处理与二步法处理对金刚石薄膜附着性能的影响。结果表明,当沉积气压为2.67kPa,碳源浓度为3.3%时,薄膜表面形貌和生长织构随着基体温度改变有明显的变化,硼化综合处理较二步法预处理更加有效地改善了膜–基附着性能。     

W18Cr4V高速钢渗铬热处理对HFCVD金刚石膜生长的影响

采用热丝化学沉积法在高速钢基体上沉积金刚石薄膜.为了减少石墨的形成、增强膜基结合强度,沉积前先使用渗铬热处理在高速钢表面制备一层碳化铬中间层.采用场发射扫描电子显微镜、X射线衍射仪、激光拉曼光谱和洛氏硬度计对渗铬基体和金刚石膜进行检测分析,研究渗铬热处理对高速钢基体与金刚石膜的物相组织、结构形貌和附着性能的影响.结果表明:渗铬热处理能在钢基表面形成一层致密的富Cr层,此过渡层能有效提高金刚石的形核率,在渗铬钢基表面形成连续致密的高质量金刚石膜,但该金刚石膜的应力较大,1 471N载荷的压痕测试导致薄膜严重破坏,说明膜基结合强度有待进一步提高.     

梯度基体温度法和反应溅射TiC过渡层对钛合金基体沉积金刚石薄膜的影响

以H2和CH4作为反应气体,采用热丝化学气相沉积法(HFCVD)在钛合金(Ti6Al4V)平板基体上制备金刚石薄膜,利用扫描电镜(SEM)、X射线衍射仪(XRD)、激光拉曼光谱(Raman)和洛氏硬度仪分析薄膜的表面形貌、结构、成分和附着性能,研究了高温形核-低温生长的梯度降温法对原始钛合金和反应磁控溅射TiC过渡层的钛合金表面沉积金刚石薄膜的影响。结果表明:原始基体区和TiC过渡层区沉积的金刚石薄膜平均尺寸分别为0.77μm和0.75μm,薄膜内应力分别为-5.85GPa和-4.14GPa,TiC层的引入可以有效提高金刚石的形核密度和晶粒尺寸的均匀性,并减少薄膜残余应力;高温形核-低温生长的梯度降温法可以有效提高金刚石的形核密度和质量,并提高原始基体上沉积金刚石薄膜的附着性能。     

Field emission enhancement of ZnO nanorod arrays with hafnium nitride coating

Vertically well-aligned single crystal ZnO nanorod arrays were synthesized and enhanced field electron emission was achieved with hafnium nitride (HfN_x) coating under proper sputtering condition. HfN_x films with various composition have been coated on ZnO nanorod arrays using a reactive direct current (DC) magnetron sputtering system. Morphology and crystal configuration of the ZnO nanorod arrays were investigated by scanning electron microscopy and X-ray diffraction. The field emission properties of the coated and uncoated ZnO nanorod arrays were characterized. The as-grown ZnO nanorod arrays showed a turn-on electric field of 6.60 V μm^− 1 at a current density of 10 μA cm^− 2 and an emission current density of 1 mA cm^− 2 under the field of 9.32 V μm^− 1. While the turn-on electric field of the coated ZnO nanorod arrays sharply decreased to 2.42 V μm^− 1, an emission current density of 1 mA cm^− 2 under the field of only 4.30 V μm^− 1 can be obtained. A method to accurately measure the work function of the coated films was demonstrated.     

脉冲磁场对TC4钛合金析出行为及力学性能的影响

为了探讨脉冲磁场对TC4钛合金析出行为的影响,本文在其时效过程中施加了脉冲磁场,分别在形核阶段和长大阶段进行观察与分析,利用扫描电镜、透射电镜、拉伸试验机研究脉冲磁场在TC4时效过程中对显微组织、强度和塑性的的影响,并通过经典形核理论及扩散理论分析了脉冲磁场在时效过程中的作用机理。结果表明,由于脉冲磁场的加入,TC4析出速度明显提高,相同时间下析出相体积分数增加,在保证力学性能的前提下,降低了时效所需的时间。施加脉冲磁场时效2h相较于未施加脉冲磁场4h塑性提高了22.67%,抗拉强度基本一致。在脉冲磁场和温度场耦合作用下时效,可使TC4提前（2h）进入过时效阶段;在拉伸断口方面,施加脉冲磁场在2h前断口形貌为韧窝断口,但当时间增加至2h后,断口逐渐转变为准解理断口形貌,表明脉冲磁场可以加速时效进程。分析认为,脉冲磁场通过磁吉布斯自由能促进了TC4在时效过程中次生相的析出及长大,是由于降低临界形核功和促进原子扩散的协同效应所致。     

Effect of Axial Magnetic Field on the Microstructure and Mechanical Properties of CrN Films Deposited by Arc Ion Plating

CrN films were deposited on the high-speed-steel substrates by arc ion plating. The effect of an axial magnetic field on the microstructure and mechanical properties was investigated. The chemical composition, microstructure, surface morphology, surface roughness, hardness and film/substrate adhesion of the film were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscope(SEM), surface morphology analyzer, Vickers microhardness test and scratch test. The results showed that the magnetic field puts much effect on the microstructure,chemical composition, hardness and film/substrate adhesion of the Cr N films. The N content increases and Cr content decreases when the magnetic flux density increases from 0 to 30 m T. All of the Cr N films were found to be substoichiometric. With an increase in the magnetic flux density, the film structures change in such way: Cr_2N →Cr_(2-N)+CrN→CrN+Cr_2N→CrN.The SEM results showed that the number of macroparticles(MPs) on the film surface is significantly reduced when the magnetic flux density increases to 10 mT or higher. The surface roughness decreases with the magnetic field, which is attributed to the fewer MPs and sputtered craters on the film surface. The hardness value increases from 2074 HV_(0.025) at 0 mT(without magnetic field) and reaches a maximum value of 2509 HV_(0.025) at 10 m T.The further increase in the magnetic flux density leads to a decrease in the film hardness. The critical load of film/substrate adhesion shows a monotonous increase with the increase in magnetic flux density.     

Influence of pretreatment conditions of Ti film on field emission properties of carbon nanotubes films

Carbon nanotubes (CNTs) films have been synthesized from methane and hydrogen gas mixture by microwave plasma chemical vapor deposition (MPCVD) on Ti-coated Al₂O₃ substrates, which mechanically grinded by SiO₂ powder with Fe dopant. It is found that the grindness is a crucial effect to produce CNTs. By varying pretreatment conditions of the substrates such as no grinding, grinding and grinded acidly washing, the grinding and acidly washing can lower the turn-on field and improve the emission current density and emission light dots. The current density of the un-pretreated sample attains 0.015 mA/cm², but the grinding sample and grinded acidly washing sample attain 12.6 and 3.8 mA/cm², at the electric field of 3.7v/μm, respectively. The grinding sample shows the excellent field emission properties.     

电场强度对Ti纳米晶薄膜生长模式及性能的影响

采用强脉冲电场条件下物理气相沉积的方法,通过大幅提高脉冲峰值电流的方式,获得晶粒尺寸细小的Ti纳米晶薄膜,并依次对薄膜的生长模式及相关性能进行了对比研究。结果表明:较大的峰值电流可以获得晶粒尺寸细小的Ti纳米晶薄膜,但峰值电流的增大不能改变薄膜内晶体以Ti(100)晶面择优生长。薄膜的表面生长形貌表现为随峰值电流的增大,颗粒间隙大幅降低、粒子团聚尺寸增大、整体呈现圆球状紧密生长的结构。截面生长形貌表现为随峰值电流的增大逐渐由纤维状向柱状形貌过渡,并有效降低薄膜的内部缺陷,致密度显著提高。力学性能表现为随峰值电流的增大,薄膜的硬度、模量都呈现出先增大后减小的变化趋势,且当峰值电流增大到30~45 A之间时,Ti薄膜的硬度与模量存在最大值。     

Structure and magnetic properties of columnar Fe-N thin films deposited by direct current magnetron sputtering

Columnar Fe-N thin films with thickness ranging from 30 to 150 nm were deposited by direct current magnetron sputtering using an Ar/N2 gas mixture (V(N2)/V(N2+Ar)=5%) on corning glass substrates. The structure, surface morphology and magnetic properties were investigated using X-ray diffractometry(XRD), scanning electron microscopy, atomic force microscopy, transmission electron microscopy(TEM) and superconducting quantum interference magnetometry. XRD investigation shows that Fe-N films exhibit amorphous-like structures; however, TEM measurements indicate the synthesis of mixture phases of α-Fe+ζ-Fe2N+ε-Fe3N in these films. The magnetic anisotropy and coercivity of Fe-N thin films exhibit strong dependence on the film growth behavior and surface morphology. With increasing the height of Fe-N films with column structures, the coercivity increases from 7.96 kA/m to 22.28 kA/m in the direction parallel to the film surface. In perpendicular direction the coercivity only increases slightly from 39.79 kA/m to 43.77 kA/m. However, the values of anisotropy field increase from 0.79×106 to 1.44×106 A/m, which is mainly attributed to the shape anisotropy of elongated columns due to the fact that the difference of magneto-crystalline anisotropy among these Fe-N films is small. The saturation magnetizations of Fe-N films vary with increasing film thickness from 23.5 to 85.1 A-m2/kg.     

Mechanical properties of interference thin films on colored stainless steel evaluated by depth-sensing nanoindentation

Aiming to evaluate the influence of morphology on mechanical properties of interference films, electrodeposited using alternating pulse current on AISI 304 stainless steel, depth-sensing nanoindentation was employed. Film porosity was measured in field emission scanning electron microscopy images. Surface roughness of the films was evaluated by atomic force microscopy. Dry wear resistance under a load of 30 N against a strip of CrO₃ 0.5 μm abrasive paper was also measured. Load-displacement response of a Berkovich indenter reveals that the interference films analyzed are softer than the uncoated substrate. Nanoscratching and wear resistance decrease as the porosity of the interference films increases. A linear relation between film hardness and its porosity was obtained. By correlating film properties with process parameters, it was found that the mechanical resistance of the interference film is controlled by the pulse size employed in the electrochemical reaction.