旋涂法制备银纳米线透明导电薄膜

以商用银纳米线分散液为原料,利用旋涂法在载玻片上制备透明导电薄膜,并测试其可见光波段透过率,分析银纳米线分散液浓度、旋涂转速和热处理对银纳米线透明导电薄膜性能的影响。实验结果表明,银纳米线分散液浓度为2 mg/mL,旋涂转速为7500 rpm时,制得的银纳米线透明导电薄膜透过率可达98 %,电阻为120 Ω;120 ℃热处理10 min后银纳米线透明导电薄膜的透过率降低至91%,电阻降低至70 Ω。通过旋涂法制备了具有较好光电性能的透明导电薄膜,有望应用于触控设备和有机发光二极管(OLED)等领域。     

不同维度的银微纳米材料研究进展

微纳米材料的性能受到其形貌的影响,以维度为分类原则,综述了不同类型银微纳米的制备和应用进展。零维的银纳米材料包括银原子和粒径小于15 nm的银纳米粉,主要提高催化性能、抗菌及光性能;一维的银纳米线由化学还原法制备,主要用于透明纳米银线薄膜制备的柔性电子器件;二维的银微纳米片可用球磨法、光诱导法、模板法等方法制备,其在导电浆料及电子元器件等方面有广泛的应用;三维的银微纳米材料包括球形和异形银粉,球形银粉主要用于导电浆料填充物,异形银粉主要应用催化、光学等方面。改善制备方法,实现微纳米材料的形貌控制,提升产物稳定性,是银纳米材料研究的发展方向。     

水基银纳米线导电墨水和大尺寸柔性透明导电薄膜的制备

以银纳米线(AgNW)为导电材料,添加羟丙基甲基纤维素(HPMC)和氟碳表面活性剂FSO-100制备了水基导电墨水,使用迈耶棒在聚对苯二甲酸乙二醇酯(PET)膜表面刮涂制备了柔性透明导电薄膜,研究了AgNW、HPMC和FSO-100等组分的添加量对透明导电薄膜光电性能的影响。结果表明,表面活性剂FSO-100可以明显提高导电墨水对PET衬底的润湿性,但过量后会使方块电阻上升;HPMC的加入可以消除AgNW的团聚,但过多的HPMC会提高薄膜的方块电阻;AgNW含量增加后,薄膜的方块电阻和透过率均随之下降,在AgNW浓度2.6 mg/mL时,透明导电薄膜的方块电阻为12Ω/sq和550 nm的透明导电薄膜透过率为94.02%,品质因子可达448.63,薄膜的粗糙度均方根为7.28 nm,并可在1000次弯折后保持光电性能不变,在可穿戴器件、柔性有机发光二极管等领域有很大的应用前景。     

柔性衬底ITO透明导电薄膜的光电性能研究

利用直流磁控溅射方法在柔性聚酯薄膜衬底上制备了氧化铟锡（ITO）透明导电薄膜，采用X射线衍射、紫外．可见分光光度计、四探针电阻测量仪等测试手段对薄膜样品进行表征，研究了氧含量、薄膜厚度、村底负偏压对ITO薄膜的晶体结构和光电性能的影响，优化了柔性衬底ITO薄膜的制备工艺条件。制得样品的最佳可见光平均透过率为85．6％，方块电阻为6Ω／口。     

银-铜纳米线的研究和应用进展

银-铜纳米线由于其优良的抗氧化性、机械柔韧性、低廉的成本以及与氧化铟锡相媲美的光电性能，具有广阔的应用前景。基于对30多篇国内外文献的分析，综述了液相还原法、种子介导法、模板法、水热法等制备银-铜纳米线的方法，并探讨了银-铜纳米线在透明导体、复合材料、传感器及催化剂等方面应用。最后，对银-铜纳米线的可控合成及其工业化应用提出了展望。     

基于无颗粒银墨水制备柔性透明导电薄膜

以酒石酸银作为前驱体，1,2-丙二胺为络合剂，乙醇为溶剂制备无颗粒酒石酸银导电墨水。以丙烯酸乳液为原料制备模板，利用模板法和旋涂工艺法，在PET基材上制备透明导电银网格薄膜。采用X射线衍射(XRD)、扫描电子显微镜(SEM)、傅里叶红外光谱仪(FTIR)等方法对制备的导电墨水和透明导电银网格薄膜进行表征。结果表明，该方法实现了银网格完全嵌入在裂纹模板凹槽中，通过调控模板的线宽大小及网孔数量可获得透过率为82%、方阻为28 Ω/sq的银网格透明导电薄膜。该导电薄膜的薄膜电阻经过100次弯曲后没有明显的变化，可以有效克服ITO薄膜柔性差的缺点。     

银纳米线透明电极的成膜及后处理综述

银纳米线是一种有较大应用潜力的新一代透明导电电极材料。总结了利用银纳米线制备透明电极常用的旋涂、喷涂和棒涂法3种主要液相成膜工艺,对成膜工艺对膜性能的影响以及其应用潜力进行了分析;介绍了加热、加压和引入介质3类后处理方法,阐述了不同后处理方法对银纳米线透明电极综合性能的影响。     

银纳米线的制备及应用简述

银纳米线的大长径比效应使其表现出高透明度、低雾度、高导电性、韧性好的优异特性,具有良好的应用前景。简述了银纳米线的制备技术液相还原法－多元醇还原法、晶种法、光照射法等制备技术。简要介绍了大长径比银纳米线在导电和抗菌等方面的独特性能,在柔性器件、水体杀菌等方面有远大前景。     

银纳米线的聚醇法制备及其在聚酯和玻璃基板上镀成的透明导电薄膜对比

以聚乙烯基吡咯烷酮(PVP)为稳定剂,聚乙二醇(EG)为还原剂,采用聚醇法[1]制备了银纳米线.根据硝酸银/PVP比例的不同制备了4种类型的银纳米线样品,其中样品D直径最均匀,杂质含量最低.通过改变硝酸银/PVP比例、加入速率和PVP分子量,可对对银纳米线的长度和直径进行控制,得到了小直径(17~100 nm)、大长度(30 nm到100μm以上)的银纳米线.采用XRD、SEM、TEM和紫外-可见光谱对银纳米线的结构进行了表征.采用不同径长比纳米银线混合,以聚对苯二甲酸二乙酯(PET)和玻璃为衬底,分别使用可扩展层压辅助溶液法和旋转涂布法制备了2种透明导电薄膜,其方阻分别为17和26?/sq,透光率分别为88%和80%.     

透明导电氧化锌薄膜材料制备技术的评价

综述透明导电ZnO薄膜制备技术的发展状况.ZnO薄膜材料具有高稳定、成本低等特点,极具市场发展潜力,尤其柔性村底的应用,有望在太阳能电池领域取代传统使用的ITO膜.     

还原氧化石墨烯对纳米银线/还原氧化石墨烯复合柔性透明导电薄膜影响

纳米银线和还原氧化石墨烯为导电相,混合纤维素膜为基底,采用真空抽滤法制备了柔性透明导电薄膜。研究了还原氧化石墨烯对柔性透明导电薄膜的光电及机械性能的影响。研究结果表明,随着还原氧化石墨烯含量的增加,导电薄膜的透过率变化不大,但薄膜的方阻逐渐下降。通过胶带测试200次原位监控方阻变化以及弯曲疲劳200次测试原位监控方阻变化研究纳米银线和石墨烯导电相在混合纤维素膜表面的附着力和薄膜的弯曲疲劳特性。研究结果表明,经过200次的胶带测试,薄膜的方阻几乎没有改变。弯曲测试结果表明,薄膜方阻约有3%的改变。说明薄膜具有良好的稳定性。分析认为,纳米银线-石墨烯复合薄膜具有良好的稳定性与纳米银线和石墨烯埋在混合纤维素膜表面有关。     

基于石墨烯透明导电薄膜的OLED研究进展

作为透明导电薄膜材料,石墨烯（Graphene）因具有十分优异的力学、光学和电学特性,在未来的柔性光电器件如触摸屏、有机发光二极管（OLED）和有机光伏电池（OPV）中表现出极大的发展潜力和广阔的应用前景。然而,受面电阻大、功函数不匹配以及表面粗糙度等关键因素的影响,基于本征石墨烯薄膜的光电器件的性能较低、稳定性较差,严重阻碍了石墨烯薄膜在柔性光电器件中的发展和应用。主要针对近年来石墨烯透明导电薄膜在OLED中应用的研究进展进行概述,并总结得出可以通过石墨烯薄膜掺杂、表面功函数修饰、清洁无损转移,以及器件结构优化等方法,进一步提高器件的性能。最后分析了石墨烯透明导电薄膜在OLED器件应用中的关键技术瓶颈,并对石墨烯透明导电薄膜在OLED中的应用前景进行了展望。     

Progress in application and preparation of silver nanowires

Silver nanowires have attracted wide research attention for their excellent optical, electrical and chemical properties. Many researches were performed toward synthesizing and application of silver nanowires. The application of silver nanowires such as transparent conductive film electrode, conductive silver adhesive and nanowelding technology was introduced herein. Principles and characteristics of different synthesizing methods of silver nanowires were reviewed in this paper, including template method, liquid polyol method, self-assembly method, ultrasonic reduction method and wet chemical method. The liquid polyol method was the most available one to achieve efficient large-scale production.     

Fabrication and characterization of ITO thin films on heat-resistant transparent flexible clay films

Transparent conductive indium tin oxide (ITO) thin films were deposited on transparent flexible clay films with heat resistant and high gas barrier properties by rf magnetron sputtering. The electrical, structural, and optical properties of these films were examined as a function of deposition temperature. A lowest resistivity of 4.2 × 10^− 4 Ωcm and an average transmittance more than 90% in the visible region were obtained for the ITO thin films fabricated at deposition temperatures more than 300 °C. It was found that ITO thin films with low resistivity and high transparency can be achieved on transparent flexible clay film using conventional rf magnetron sputtering at high temperature, those characteristics are comparable to those of ITO thin films deposited on a glass substrate.     

纳米银线柔性透明导电薄膜的制备及应用现状

纳米银线因拥有良好的导电性,优异的透光性、柔性,原料来源广等特点,被认为是透明导电薄膜领域的下一代新型材料,其制备研究日益受到人们的广泛关注。以此为基础,对纳米银线柔性透明导电薄膜的制备方法及其研究进展进行了简介,并对其发展及应用现状进行了展望。     

纳米银线的制备方法综述

纳米银线(Ag NWs)由于其优良的导电性、导热性、柔韧性及纳米材料独特的尺寸效应有望替代ITO成为新一代的透明导电膜材料而引起广泛的关注。综述介绍了多元醇法、晶种法、水热法、模板法、湿化学法及其他一些化学制备Ag NWs的方法,提出由实验室制备向工业化批量生产的发展方向。     

A Comparative Study on the Microstructure and Properties of ITO Targets and Thin Films Prepared from Two Different Powders

With the rapid development of indium tin oxide(ITO) in the electronic display industry, choosing which raw powders to prepare high-quality ITO targets has always been a controversial topic. In the work, in order to clearly understand the effect of the raw powders on the microstructure and properties of ITO targets and thin films, tin-doped indium oxide(dITO) and In_2O_3-SnO_2 mixed(mITO) powders were chosen to prepare ITO targets for depositing the films and a comparative study on their microstructure and properties was conducted. It is found that,(1) dITO targets possess a higher solid solubility of tin in indium oxide and more uniform elemental distribution, while there are a higher density, a finer grain size and a higher mass ratio of In_2 O_3 to SnO_2 for the mITO targets;(2) dITO films with more coarser columnar grains and a rougher surface prefer to grow along the [100] direction in an Ar atmosphere;(3) the conductive property of ITO films only depends on the doping amount of tin and is independent of the raw powders and the preparation process of the target source;(4) dITO films possess the superior optical property and narrower optical band gap;(5) the etching property of mITO films is superior to that of dITO films due to the lower solid solubility of tin in indium oxide.     

On the ultrathin gold film used as buffer layer at the transparent conductive anode/organic electron donor interface

Previously, we have shown that a gold thin film of only 0.5 nm introduced at the interface between the indium tin oxide or ZnO anode and the organic electron donor in organic photovoltaic cells induces a strong improvement of the cell efficiency. Of course a thickness of 0.5 nm corresponds only to an averaged thickness, the films being too thin to be continuous. For a clear understanding of the physical mechanisms that are responsible for this improved behaviour, it is important to know the fractional coverage and the island height of this thin Au film. In the present work, we have used two different techniques, such as treated scanning electron microscope images and analysis of the inelastic part of peaks of X-ray photoelectron spectroscopy spectra, to estimate the gold coverage and island height of the transparent conductive anode. There is an excellent agreement between the results achieved by both methods. Only 15% of the anode is covered, which proves the high efficiency of gold as an anode buffer layer in organic photovoltaic devices.