Multiferroic and magnetoelectric properties of single-phase Bi0.85La0.1Ho0.05FeO3 ceramics

Single-phase Bi_0.85La_0.1Ho_0.05FeO₃ multiferroic ceramics were prepared by a rapid liquid sintering method. The ceramics exhibited an obvious ferroelectric loop with a remnant polarization of 11.2 μC/cm² and also showed weak ferromagnetism with the remnant magnetization of 0.179 emu/g at room temperature. A considerable enhancement of the polarization on magnetic poling and a dielectric anomaly in the vicinity of the antiferromagnetic transition temperature due to the intrinsic magnetoelectric coupling effect were observed in Bi_0.85La_0.1Ho_0.05FeO₃ ceramics. The dielectric constant for the Bi_0.8La_0.1Ho_0.05FeO₃ samples at room temperature decreases with increasing applied magnetic fields, and the coupling coefficient (?′(H) − ?′(0))/?′(0) reaches −1.04% at H = 10 kOe.     

Structure, ferroelectric/magnetoelectric properties and leakage current density of (Bi0.85Nd0.15)FeO3 thin films

In this paper, we report on the structure, ferroelectric/magnetoelectric properties and improvement of leakage current density of (Bi_0.85Nd_0.15)FeO₃ (BNFO) thin films deposited on Pt(1 1 1)/Ti/SiO₂/Si substrates from the polymeric precursor method. X-ray patterns and Rietveld refinement indicated that BNFO thin films with a tetragonal structure can be obtained at 500 °C for 2 h in static air. Field emission scanning electron, atomic force and piezoelectric force microscopies showed the microstructure, thickness and domains with polarization-oriented vectors of BNFO thin films. Ferroelectric and magnetoelectric properties are evident by hysteresis loops. The magnetoelectric coefficient measurement was performed to show the magnetoelectric coupling behavior. The maximum magnetoelectric coefficient in the longitudinal direction was close to 12 V/cm Oe. Piezoresponse force microscopy micrographs reveal a polarization reversal with 71° and 180° domain switchings and one striped-domain pattern oriented at 45° besides the presence of some nanodomains with rhombohedral phase involved in a matrix with tetragonal structure. The cluster models illustrated the unipolar strain behavior of BNFO thin films. The leakage current density at 5.0 V is equal to 1.5 × 10⁻¹⁰ A/cm² and the dominant mechanism in the low-leakage current for BNFO thin films was space-charge-limited conduction.     

Structural, optical and electromagnetic properties of Bi1−xHoxFeO3 multiferroic materials

Bi_1−xHo_xFeO₃ (x = 0.00, 0.05, 0.10, 0.15 and 0.20) polycrystalline ceramics were synthesized by a solid-state reaction and their structural, absorption, Raman scattering, impedance and magnetic properties were investigated. The substitution of rare earth Ho for Bi was found to decrease the impurity phase in BiFeO₃ ceramics. There appears an anomalous change in the lattice constants, optical band gap as well as the impedance spectroscopy and magnetization of samples at x = 0.10, suggesting a limit of dissolubility of Ho doped ions in BiFeO₃. Additionally, the Raman measurement performed for the lattice dynamics study of Bi_1−xHo_xFeO₃ samples reveals a band centered at around 1000-1300 cm⁻¹ which is associated with the resonant enhancement of two-phonon Raman scattering in the multiferroic Bi_1−xHo_xFeO₃ samples. Ho-doped BiFeO₃ also showed a ferromagnetic-like behavior with M_r = 1070 × 10⁻⁴ and M_s = 1.60 emu/g for optimum content x = 0.10, which is similar to the solid solution system of BiFeO₃.     

Characterization of sol-gel synthesised lead-free (1 − x)Na0.5Bi0.5TiO3-xBaTiO3-based ceramics

The crystal structure, microstructure, dielectric and ferroelectric properties of (1 − x)Na_0.5Bi_0.5TiO₃-xBaTiO₃ ceramics with x = 0, 0.03, 0.05, 0.07 and 0.1 are investigated. A structural variation according to the system composition was investigated by X-ray diffraction (XRD) analyses. The results revealed that the synthesis temperature for pure perovskite phase powder prepared by the present sol-gel process is much lower (800 °C), and a rhombohedral-tetragonal morphotropic phase boundary (MPB) is found for x = 0.07 composition which showing the highest remanent polarization value and the smallest coercive field. The optimum dielectric and piezoelectric properties were found with the 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃ composition. The piezoelectric constant d₃₃ is 120 pC/N and good polarization behaviour was observed with remanent polarization (P_r) of 12.18 pC/cm², coercive field (E_c) of 2.11 kV/mm, and enhanced dielectric properties ?_r > 1500 at room temperature. The 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃-based ceramic is a promising lead-free piezoelectric candidate for applications in different devices.     

Preparation and electrical properties of Bi0.5Na0.5TiO3-BaTiO3-KNbO3 lead-free piezoelectric ceramics

Lead-free (1 − x)Bi_0.47Na_0.47Ba_0.06TiO₃-xKNbO₃ (BNBT-xKN, x = 0-0.08) ceramics were prepared by ordinary ceramic sintering technique. The piezoelectric, dielectric and ferroelectric properties of the ceramics are investigated and discussed. The results of X-ray diffraction (XRD) indicate that KNbO₃ (KN) has diffused into Bi_0.47Na_0.47Ba_0.06TiO₃ (BNBT) lattices to form a solid solution with a pure perovskite structure. Moderate additive of KN (x ≤ 0.02) in BNBT-xKN ceramics enhance their piezoelectric and ferroelectric properties. Three dielectric anomaly peaks are observed in BNBT-0.00KN, BNBT-0.01KN and BNBT-0.02KN ceramics. With the increment of KN in BNBT-xKN ceramics, the dielectric anomaly peaks shift to lower temperature. BNBT-0.01KN ceramic exhibits excellent piezoelectric properties and strong ferroelectricity: piezoelectric coefficient, d₃₃ = 195 pC/N; electromechanical coupling factor, k_t = 58.9 and k_p = 29.3%; mechanical quality factor, Q_m = 113; remnant polarization, P_r = 41.8 μC/cm²; coercive field, E_c = 19.5 kV/cm.     

Ba(Ti1 − xSnx)O3 (x = 0.13) nanomaterials produced by low-temperature aqueous synthesis

BaTi_0.87Sn_0.13O₃ (BTS₁₃) nanopowder was prepared by low-temperature aqueous synthesis (LTAS) method. The evolution of the structure and microstructure of the precursor precipitate, heated at temperatures up to 1000 °C was studied by TGA, FT-IR, SEM and XRD techniques. The dried precipitate showed a microstructure consisting of nano-sized grains (∼40 nm) with great tendency to agglomeration. BaTi_0.87Sn_0.13O₃ single phase was obtained at 800 °C. The ceramics prepared from as-obtained BTS₁₃ powders (60-70 nm) show good dielectric and ferroelectric characteristics. The dielectric constant was about 4800 and the dielectric loss (tan δ) was 0.229 at 1 kHz and at the Curie temperature (31 °C). The remanent polarization (P_r) and the coercive field (E_C) of Ba_0.97Ho_0.03TiO₃ ceramics, at 1 kHz, were P_r = 13 μC/cm² and E_C = 0.89 kV/cm. The ferroelectric parameters E_C and P_r decrease with increasing frequency in the domain 100 Hz to 10 kHz.     

Thickness effects of Bi0.89Ti0.11FeO3 thin films deposited on PbZr0.2Ti0.79Nb0.01O3 buffer layers

Bi_0.89Ti_0.11FeO₃ thin films with the thicknesses of 200-440 nm were fabricated on the 40-nm-thick PbZr_0.2Ti_0.79Nb_0.01O₃ (PZTN)-buffered Pt(1 1 1)/Ti/SiO₂/Si substrates using a metal organic decomposition process. As a result of the good insulating property and high breakdown characteristic of the PZTN buffer layer, the leakage currents in the Bi_0.89Tb_0.11FeO₃ films are significantly reduced. All the films show well-saturated and rectangular P-E hysteresis loops without any evident leaky behavior. The remnant polarization P_r and coercive field E_c for all Bi_0.89Ti_0.11FeO₃ films are around 45-50 μC/cm² and 200 kV/cm, respectively, and show weak dependent on the film thickness. The 200-nm-thick Bi_0.89Ti_0.11FeO₃ film exhibits better fatigue-free characteristic and charge-retaining ability, and the domain backswitching is significantly restrained due to the strong anti-aging ability of the PZTN buffer layer.     

Coexistence of room temperature ferroelectricity and ferrimagnetism in multiferroic BiFeO3-Bi0.5Na0.5TiO3 solid solution

The structure, ferroelectric and magnetic properties of (1 − x)BiFeO₃-xBi_0.5Na_0.5TiO₃ (x = 0.37) solid solution fabricated by a sol-gel method have been investigated. X-ray diffraction and Raman spectroscopy measurements show a single-phase perovskite structure with no impurities identified. Compared with pure BiFeO₃, the coexistence of ferroelectricity and ferrimagnetism have been observed at room temperature for the solution with remnant polarization P_r = 1.41 μC/cm² and remnant magnetization M_r = 0.054 emu/g. Importantly, a magnetic transition from ferrimagnetic (FM) ordering to paramagnetic (PM) state is observed, with Curie temperature T_C ∼ 330 K, being explained in terms of the suppression of cycloid spin configuration by the structural distortion.     

Microstructure, ferroelectric, and piezoelectric properties of (1 − x − y)Bi0.5Na0.5TiO3-xBaTiO3-yBi0.5Ag0.5TiO3 lead-free ceramics

Lead-free (1 − x − y)Bi_0.5Na_0.5TiO₃-xBaTiO₃-yBi_0.5Ag_0.5TiO₃ (BNT-BT-BAT-x/y, x = 0-0.10, y = 0-0.075) piezoelectric ceramics were synthesized by conventional oxide-mixed method. The microstructure, ferroelectric, and piezoelectric properties of the ceramics were investigated. Results show that a morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases of BNT-BT-BAT-x/0.04 ceramics is formed at x = 0.06-0.08. The addition of BAT has no obvious change on the crystal structure of BNT-BT ceramics while it causes the grain size of the ceramics to become more homogenous. Near the MPB, the ceramics with x = 0.06 and y = 0.05-0.06 possess optimum electrical properties: P_r ∼ 42.5 μC/cm², E_c ∼ 32.0 kV/cm, d₃₃ ∼ 172 pC/N, k_p ∼ 32.6%, and k_t ∼ 52.6%. The temperature dependences of k_p and polarization versus electric hysteresis loops reveal that the depolarization temperature (T_d) of BNT-BT-BAT-0.06/y ceramics decreases with increasing y. In addition, the polar and non-polar phases may coexist in the BNT-BT-BAT-x/y ceramics above T_d.     

Ferroelectric relaxor behavior and dielectric spectroscopic study of 0.99(Bi0.5Na0.5TiO3)-0.01(SrNb2O6) solid solution

0.99(Bi_0.5Na_0.5TiO₃)-0.01(SrNb₂O₆) was prepared by simple solid state reaction route. Material stabilized in rhombohedral perovskite phase with lattice constants a = 3.9060 Å, α = 89.86° and a_h = 5.4852 Å, c_h = 6.7335 Å for hexagonal unit cells. Density of material was found 5.52 g_m/cm³ (92.9% of theoretical one) in the sample sintered at 950 °C. The temperature dependent dielectric constant exhibits a broad peak at 538 K (?_m = 2270) at 1 kHz that shows frequency dependent shifts toward higher temperature - typical relaxor behavior. Modified Curie-Weiss law was used to fit the dielectric data that exhibits almost complete diffuse phase transition characteristics. The dielectric relaxation obeys the Vogel-Fulcher relationship with the freezing temperature 412.4 K. Significant dielectric dispersion is observed in low frequency regime in both components of dielectric response and a small dielectric relaxation peak is observed. Cole-Cole plots indicate polydispersive nature of the dielectric relaxation; the relaxation distribution increases with increase in temperature.     

Electrical, magnetic, and magnetoelectric characterization of fine-grained Pb(Zr0.53Ti0.47)O3-(Ni0.5Zn0.5)Fe2O4 composite ceramics

Fine-grained Pb(Zr_0.53Ti_0.47)O₃-(Ni_0.5Zn_0.5)Fe₂O₄ (PZT-NZFO) magnetoelectric (ME) composite ceramics were fabricated by a modified hybrid process at a low sintering temperature of 900 °C. Well-controlled crystallized grain size and homogeneous microstructure with a good mixture of two phases were observed in the ceramics. The ceramics show coexistence of ferrimagnetic and ferroelectric phases with well-formed ferromagnetic and ferroelectric hysteresis loops at room temperature. A significant ME effect was observed with a ME coefficient of 0.537 V cm⁻¹ Oe⁻¹ in the vicinity of electromechanical resonance. In addition, high capacitance can be obtained at low frequency, and magnetic properties in the ceramics can be tailored by the grain size of the ferromagnetic particles in a simple and flexible way.     

Multiferroic behavior in glass-crystal nanocomposites containing Te2NiMnO6

Nanocomposites containing nanocrystals of Te₂NiMnO₆ were synthesized by suitable heat treatment of a glass with composition 2 TeO₂·NiO·MnO (molar ratio). The crystallites had dimensions in the range 17-41 nm. X-ray diffraction data of the specimens were analyzed by using a TREOR computer programme. Lattice parameters extracted by this method indicated that the crystal symmetry was monoclinic. The nanocomposites exhibited weak ferromagnetism in the temperature range 2-300 K. They also showed ferroelectric hysteresis at room temperature with a remanent polarization of 0.015 μC/cm². The specimens showed a magnetodielectric (MD) behavior with dielectric constant increasing as a function of applied magnetic field. The MD parameter obtained in the present system was 0.55%.     

Effects of Mn substitution on ferro- and piezoelectric properties of Bi0.86Sm0.14FeO3 thin films

The Bi_0.86Sm_0.14FeO₃ (BSFO) and Bi_0.86Sm_0.14Fe_1 − xMn_xO₃ (BSFMO) (x = 0.01, 0.03, 0.05) thin films were deposited on indium tin oxide/glass substrates via a metal organic deposition method. 1 at.% Mn doping leads to an evident reduction of the leakage current in BSFO film. More importantly, the Bi_0.86Sm_0.14Fe_0.99Mn_0.01O₃ film exhibits the lowest coercive field (E_c = 272 kV/cm), the largest remanent polarization (P_r = 53.6 μc/cm²) and the remanent out-of-plane piezoelectric coefficient (d₃₃ = 146 pm/V). However, further increase of Mn doping content results in the deterioration of the charge retaining capability and the piezoelectric properties of the films. The negative influence of high Mn doping contents was discussed based on the structure change and the contribution of irreversible movement of non-180° domain walls in the aged films.     

Phase structure and electrical properties of (0.8 − x) BaTiO3-0.2Bi0.5Na0.5TiO3-xBaZrO3 lead-free piezoceramics

Lead-free piezoelectric ceramics (0.8 − x)BaTiO₃-0.2Bi_0.5Na_0.5TiO₃-xBaZrO₃ (BT-BNT-xBZ, 0 ≤ x ≤ 0.08) doped with 0.3 wt% Li₂CO₃ were prepared by conventional solid-state reaction method. With the Li₂CO₃ doping, all the ceramics can be well sintered at 1170-1210 °C. The phase structure, dielectric, ferroelectric and piezoelectric properties of the ceramics were investigated. Results show that a morphotropic phase boundary (MPB) between tetragonal and pseudocubic phases exists at x = 0.03-0.04. The addition of Zr can improve the piezoelectric properties of BT-BNT ceramics. Furthermore, a relaxor behavior is induced and the tetragonal-cubic phase transition shifts towards lower temperatures after the addition of Zr. The ceramics with x = 0.03 possess the optimum electrical properties: d₃₃ = 72 pC/N, k_p = 15.4%, ?_r = 661, P_r = 18.5 μC/cm², E_c = 34.1 kV/cm, T_c = 150 °C.     

Structure and electrical properties of MnO2-doped Sr2−xCaxNaNb5O15 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics Sr_2−xCa_xNaNb₅O₁₅ + y wt% MnO₂have been prepared by the conventional solid state reaction method. Our results reveal that Ca²⁺and Mn ions have entered into the Sr₂NaNb₅O₁₅ lattices to form a solid solution with tungsten-bronze structure. The substitution of Ca²⁺ induces a decrease in piezoelectric coefficient d₃₃, electromechanical coupling factors k_p and k_t, while, the addition of Mn ions decreases the sintering temperature and effectively promotes the densification of the ceramics. The effect of substitution of Ca²⁺and Mn ions on the structure, electrical properties and diffused phase changing were investigated systematically. For the ceramic with x = 0.05 and y = 0.5, the piezoelectric, dielectric and ferroelectric properties become optimum, giving a piezoelectric coefficient d₃₃ = 190 pC/N, electromechanical coupling factors k_p = 13.4% and k_t = 36.5%, ?_r = 2123, loss tangent tan δ = 0.038, remanent polarization P_r = 4.76 μC/cm², coercive field E_c = 12.68 kV/cm, and Curie temperature T_c = 260 °C.     

The temperature-dependent electrical properties of Bi0.5Na0.5TiO3-BaTiO3-Bi0.5K0.5TiO3 near the morphotropic phase boundary

Bi_0.5Na_0.5TiO₃-BaTiO₃-Bi_0.5K_0.5TiO₃ (BNT-BT-BKT) lead-free piezoceramics with compositions near the rhombohedral-tetragonal morphotropic phase boundary (MPB) were prepared and investigated. At room temperature, all ceramics show excellent electrical properties. In this study, the best properties were observed in 0.884BNT-0.036BT-0.08BKT, with the remnant polarization, bipolar total strain, unipolar strain, piezoelectric constant, and planar electromechanical coupling factor being 34.4 μC cm⁻², 0.25%, 0.15%, 122 pC N⁻¹, and 0.30, respectively. Detailed analysis of the temperature dependence of polarization-electric field (P-E) loops and bipolar/unipolar strain-electric field (S-E) curves of this composition revealed a ferroelectric-antiferroelectric phase transition around 100 °C. Around this temperature, there is a significant shape change in both P-E and S-E curves, accompanied by enhanced strain and decreased polarization; the largest recoverable strain reaches 0.42%. These results can be explained by the formation of antiferroelectric order and the contribution of field-induced antiferroelectric-ferroelectric phase transition to piezoelectric response. Our results indicate that BNT-BT-BKT lead-free piezoceramics can have excellent electrical properties in compositions near the MPB and also reveal some insight into the temperature dependence of the electrical performance with the MPB composition.     

Low temperature sintering and microwave dielectric properties of (Mg0.7Zn0.3)0.95Co0.05TiO3 ceramics with BaCu(B2O5) additions

The effects of BaCu(B₂O₅) additives on the sintering temperature and microwave dielectric properties of (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics were investigated. The (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics were not able to be sintered below 1000 °C. However, when BaCu(B₂O₅) were added, they were sintered below 1000 °C and had the good microwave dielectric properties. It was suggested that a liquid phase with the composition of BaCu(B₂O₅) was formed during the sintering and assisted the densification of the (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics at low temperature. BaCu(B₂O₅) powders were produced and used to reduce the sintering temperature of the (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics. Good microwave dielectric properties of Q × f = 35,000 GHz, ?_r = 18.5.0 and τ_f = −51 ppm/°C were obtained for the (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics containing 7 wt.% mol% BaCu(B₂O₅) sintered at 950 °C for 4 h.     

Piezoelectric and dielectric properties of Dy2O3-doped (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ + x wt% Dy₂O₃ with x = 0-0.3 ceramics were synthesized by conventional solid-state processes. The effects of Dy₂O₃ on the microstructure, the piezoelectric and dielectric properties were investigated. X-ray diffraction pattern confirmed that the coexistence of tetragonal and rhombohedral phases in the (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ composition was not changed by adding 0.05-0.3 wt% Dy₂O₃. SEM images indicate that all the ceramics have pore-free microstructures with high density, and that doping of Dy₂O₃ inhibits the grain growth of the ceramics. The addition of Dy₂O₃ shows the double effects on decreasing the piezoelectric and dielectric properties for 0 < x < 0.15 when Dy³⁺ ions substitute B-site Ti⁴⁺ ions, and increasing the properties for 0.15 < x < 0.3 when Dy³⁺ ions enters into A-site of the perovskite structure. The optimum electric properties of piezoelectric constant d₃₃ = 170 pC/N and the dielectric constant ?_r = 1900 (at a frequency of 1 kHz) are obtained at x = 0.3.     

Epitaxial 0.65PbMg1/3Nb2/3O3-0.35PbTiO3 (PMN-PT) thin films grown on LaNiO3/CeO2/YSZ buffered Si substrates

Ferroelectric PMN-PT thin films with a thickness of 600 nm were epitaxially grown on buffered Si (0 0 1) substrates at a substrate temperature that ranged from 550 to 700 °C using pulsed laser deposition (PLD). LaNiO₃ (LNO) electrode thin films with a resistivity of ∼1900 μΩ cm were epitaxially grown on CeO₂/YSZ buffered Si (0 0 1) substrates. The PMN-PT thin films grown at 600 °C on LNO/CeO₂/YSZ/Si substrates had a pure perovskite and epitaxial structure. The PMN-PT films exhibited a high dielectric constant of about 1818 and a low dissipation factor of 0.04 at a frequency of 10 kHz. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization of 11.1 μC/cm² and a coercive field of 43 kV/cm, were obtained in the epitaxial PMN-PT films.